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Toshiba Semiconductor and Storage DF2B20M4SL,L3F
- Part No.:
- DF2B20M4SL,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
DF2B20M4SL,L3F.pdf
- Description:
- TVS DIODE 18.5VWM 30VC SL2
- Quantity:
- Payment:
- Shipping:
Inventory:29,937
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Product details
Overview
DF2B20M4SL,L3F from Toshiba Electronic Devices & Storage Corporation is a bidirectional ESD protection diode designed for high-speed and differential signal lines, featuring 18.5 V working peak reverse voltage (VRWM), 0.2 pF typical capacitance, ±15 kV IEC61000-4-2 contact ESD rating, 0.2 Ω typical dynamic resistance, and 26 V clamping voltage at 0.5 A peak pulse current-optimized for NFC antenna protection in space-constrained mobile devices.
For engineers reviewing the DF2B20M4SL,L3F datasheet, DF2B20M4SL,L3F pinout, DF2B20M4SL,L3F application, or DF2B20M4SL,L3F equivalent, key selection criteria include low-capacitance signal integrity preservation, snapback-enabled low clamping under ESD stress, SL2 package compatibility with ultra-dense PCB layouts, and verified IEC61000-4-2/4-5 transient immunity for mobile interface protection.
Technical Context
This device implements a silicon epitaxial planar TVS structure with snapback characteristics to achieve low clamping voltage (VC = 26 V @ IPP = 0.5 A) while maintaining high ESD robustness (±15 kV contact). Its bidirectional configuration enables symmetric protection of differential pairs without polarity constraints.
The SL2 package (0.62 mm × 0.32 mm) integrates two terminals with defined grounding roles: Pin 1 serves as I/O when Pin 2 is grounded, and vice versa-enabling flexible placement on high-frequency traces such as NFC antenna feeds or USB 2.0 data lines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 18.5 V maximum - ensures reliable operation on 18 V nominal signal rails without leakage or conduction |
| Total Capacitance (Ct) | 0.2 pF typ. - preserves signal integrity on >100 MHz NFC and high-speed serial interfaces |
| Dynamic Resistance (RDYN) | 0.2 Ω typ. - minimizes voltage overshoot during fast ESD transients (IEC61000-4-2) |
| Clamp Voltage (VC) | 26 V @ IPP = 0.5 A - limits downstream IC stress below absolute maximum ratings during surge events |
| ESD Rating | ±15 kV contact / ±15 kV air per IEC61000-4-2 - exceeds industrial immunity requirements |
| Package | SL2 (0.62 mm × 0.32 mm) - supports 0201-class board density for smartphone antenna modules |
Pinout & Package
DF2B20M4SL,L3F uses the SL2 surface-mount package (0.62 mm × 0.32 mm, 0.2 mg typical weight), optimized for automated placement on RF-sensitive layouts. Pin assignment follows a dual-terminal bidirectional configuration with functional grounding dependency.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | I/O terminal (active when Pin 2 grounded) | Primary signal path for differential or single-ended line protection; requires GND reference on Pin 2 |
| Pin 2 | GND reference terminal (when Pin 1 active) | Provides low-inductance return path for ESD current; must be connected to system ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional snapback TVS | Enables symmetric ESD clamping on differential signals (e.g., NFC antenna) without polarity sensitivity |
| Ultra-low capacitance | 0.2 pF typical preserves impedance matching and insertion loss on 13.56 MHz NFC links |
| Low dynamic resistance | 0.2 Ω typical reduces voltage overshoot during sub-nanosecond ESD transients |
| High ESD immunity | ±15 kV contact discharge meets IEC61000-4-2 Level 4 for handheld consumer electronics |
| SL2 footprint | 0.62 mm × 0.32 mm size allows placement directly adjacent to RF connectors or IC pads |
Applications
| NFC Antenna Protection | USB 2.0 Data Line Protection |
|---|---|
Use Scenario: Protecting 13.56 MHz near-field communication antenna traces in smartphones and wearables from human-body ESD events. IC Role / Device Role / Timing Role: Bidirectional TVS diode placed in series with antenna feedline to clamp transients before RF front-end ICs. Use Value: 0.2 pF capacitance avoids detuning antenna resonance; ±15 kV ESD rating prevents latch-up in NFC transceivers. | Use Scenario: Safeguarding D+ and D− lines in portable USB peripherals against contact discharge during cable insertion/removal. IC Role / Device Role / Timing Role: Low-capacitance ESD suppressor mounted at USB connector to shunt transients to ground before PHY interface. Use Value: 26 V clamping voltage stays below USB 2.0 PHY absolute maximum ratings; SL2 size fits tight connector keep-out zones. |
| HDMI DDC Channel Protection | Mobile Display Serial Interface (DSI) |
Use Scenario: Shielding HDMI Display Data Channel (DDC) lines (SCL/SDA) from ESD in docking stations and tablets. IC Role / Device Role / Timing Role: Dual-line ESD protector deployed on I²C-compatible DDC bus to maintain 100 kHz timing integrity. Use Value: Sub-0.5 pF capacitance prevents rise-time degradation on 100 kHz clock/data; bidirectional operation matches I²C open-drain logic. | Use Scenario: Securing high-speed MIPI DSI data lanes in smartphone displays against assembly-line and end-user ESD exposure. IC Role / Device Role / Timing Role: Per-lane TVS diode placed immediately after display connector to suppress transients before display driver IC. Use Value: 0.2 Ω dynamic resistance ensures <1 ns response time; SL2 footprint aligns with 0.4 mm DSI trace pitch. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF typical capacitance; 12 V VRWM; ±8 kV IEC61000-4-2 contact rating | Targeted at lower-voltage I/O (e.g., GPIO, SDIO); less suitable for 18 V NFC antenna rails | Select when lower VRWM and higher capacitance tolerance are acceptable for non-RF interfaces |
| ESD56081D05 | 0.35 pF typical capacitance; 5.5 V VRWM; ±15 kV IEC61000-4-2 rating; 3-pin SOT-563 package | Designed for 3.3 V/5 V digital buses; larger footprint and asymmetric pinout limit RF layout flexibility | Prefer for multi-line protection where board area permits and VRWM ≤ 5.5 V suffices |
Compared with TPD2E001DRYR and ESD56081D05, DF2B20M4SL,L3F uniquely combines 18.5 V VRWM, 0.2 pF capacitance, and SL2 packaging-making it the only option validated for NFC antenna protection where high working voltage and minimal RF loading are simultaneously required.
Availability
DF2B20M4SL,L3F is available at Aetrix Electronics and suitable for NFC antenna protection, USB 2.0 interface safeguarding, HDMI DDC channel hardening, and MIPI DSI lane shielding requiring stable component supply across high-volume mobile production programs.
Supply support for DF2B20M4SL,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, miniaturization, and energy efficiency for consumer, industrial, and automotive markets.
DF2B20M4SL,L3F belongs to Toshiba's ESD protection diode product line, engineered specifically for ultra-low-capacitance, high-voltage transient suppression in RF-critical mobile interfaces including NFC, wireless charging, and high-speed serial links.
FAQ
What is the primary circuit role of DF2B20M4SL,L3F in an NFC antenna design?
The DF2B20M4SL,L3F functions as a bidirectional TVS diode placed in series with the NFC antenna feedline to clamp ESD transients before they reach the NFC transceiver IC. Its 0.2 pF capacitance avoids antenna detuning at 13.56 MHz, while its 18.5 V VRWM supports bias conditions common in active antenna circuits. DF2B20M4SL,L3F achieves this with snapback behavior that delivers 26 V clamping at 0.5 A, protecting downstream components without compromising RF performance.
Does DF2B20M4SL,L3F meet IEC61000-4-2 Level 4 ESD immunity requirements?
Yes, DF2B20M4SL,L3F is rated for ±15 kV contact discharge and ±15 kV air discharge per IEC61000-4-2, satisfying Level 4-the highest severity class for electrostatic immunity testing. This rating is verified through standardized test procedures and applies to both pins under proper PCB layout (short, low-inductance ground paths). DF2B20M4SL,L3F maintains functionality post-test with no parametric shift or damage, as confirmed in Toshiba's qualification reports.
How does the SL2 package of DF2B20M4SL,L3F impact PCB layout for high-frequency applications?
The SL2 package (0.62 mm × 0.32 mm) enables direct placement adjacent to RF connectors or IC pads with minimal parasitic inductance. Its symmetrical two-terminal structure supports routing on 0.4 mm-pitch DSI or NFC traces without stubs. DF2B20M4SL,L3F requires strict adherence to Toshiba's land pattern (0.3 mm pad width, 0.4 mm spacing) to preserve 0.2 pF capacitance and avoid solder bridging-critical for maintaining impedance continuity above 100 MHz.
Can DF2B20M4SL,L3F be used to protect USB 2.0 D+ and D− lines?
Yes, DF2B20M4SL,L3F is suitable for USB 2.0 data line protection due to its 0.2 pF capacitance (well below the 1 pF USB 2.0 specification limit), bidirectional operation matching differential signaling, and 26 V clamping voltage that remains safely below the 36 V absolute maximum rating of most USB PHYs. DF2B20M4SL,L3F must be placed within 3 mm of the USB connector with dedicated ground vias to ensure effective transient shunting.
What is the significance of DF2B20M4SL,L3F's 0.2 Ω dynamic resistance value?
DF2B20M4SL,L3F's 0.2 Ω typical dynamic resistance determines the voltage overshoot during fast ESD events: for a 15 kV contact discharge, peak current can exceed 8 A, and the resulting IR drop across DF2B20M4SL,L3F contributes directly to clamping performance. This low RDYN enables tighter control of VC (26 V @ 0.5 A), reducing stress on protected ICs and improving system-level ESD survivability-especially critical in battery-powered devices where reset recovery is not guaranteed.
DF2B20M4SL,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 18.5V (Max)
- Voltage - Breakdown (Min):
- 19V
- Voltage - Clamping (Max) @ Ipp:
- 30V
- Current - Peak Pulse (10/1000µs):
- 500mA (8/20µs)
- Power - Peak Pulse:
- 15W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SL2
DF2B20M4SL,L3F FAQ
1.How can I place an order for DF2B20M4SL,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B20M4SL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B20M4SL,L3F reliable?
The price and inventory of DF2B20M4SL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B20M4SL,L3F is usually 5 days.
3.What payment methods are accepted for DF2B20M4SL,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B20M4SL,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B20M4SL,L3F?
DF2B20M4SL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B20M4SL,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B20M4SL,L3F?
For technical support, including DF2B20M4SL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B20M4SL,L3F requirements.
6.How does Aetrix verify that DF2B20M4SL,L3F is sourced from the original manufacturer or authorized distributors?
All DF2B20M4SL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B20M4SL,L3F meets industry standards.
7.What is the process for return or replacement of DF2B20M4SL,L3F?
All DF2B20M4SL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B20M4SL,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B20M4SL,L3F part is unused and in its original packaging.
Return procedure for DF2B20M4SL,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B20M4SL,L3F Tags
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