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Toshiba Semiconductor and Storage DF2B5BSL,L3F
- Part No.:
- DF2B5BSL,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 2-SMD, No Lead
- Datasheet:
-
DF2B5BSL,L3F.pdf
- Description:
- BI-DIRECTIONAL ESD PROTECTION DI
- Quantity:
- Payment:
- Shipping:
Inventory:818
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Product details
Overview
DF2B5BSL,L3F from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for I/O line protection in mobile interfaces, featuring ±23 kV IEC61000-4-2 contact ESD immunity, 3.3 V working peak reverse voltage (VRWM), 0.2 Ω typical dynamic resistance (RDYN), and 5.5 V clamping voltage at 1 A (VC). It safeguards high-speed signal lines in smartphones and tablets.
For engineers reviewing the DF2B5BSL,L3F datasheet, DF2B5BSL,L3F pinout, DF2B5BSL,L3F application, or DF2B5BSL,L3F equivalent, this page delivers verified electrical parameters, SL2 package dimensions, snapback-based low-clamp behavior, and real-world ESD protection use cases for compact portable electronics design.
Technical Context
The DF2B5BSL,L3F employs silicon epitaxial planar technology with snapback-triggered TVS operation, enabling fast response to ESD transients while maintaining low dynamic resistance. Its bidirectional structure supports protection on either I/O pin when the opposite terminal is grounded.
It operates within a 3.3 V signal rail context, with clamping performance validated at IPP = 1 A (VC = 5.5 V typ.) and robustness up to IPP = 8 A (VC = 9.6 V typ.), per IEC61000-4-5 8/20 µs pulse testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 3.3 V - Maximum continuous reverse voltage before leakage rise; matches standard 3.3 V logic I/O rails. |
| VESD (IEC61000-4-2) | ±23 kV contact - Highest-tier ESD immunity for handheld device interfaces without external shielding. |
| RDYN | 0.2 Ω typ. - Low dynamic impedance ensures minimal voltage overshoot during fast ESD events. |
| VC @ IPP = 1 A | 5.5 V typ. - Clamping voltage stays below 5.5 V during 1 A transient, protecting 3.3 V IC inputs. |
| Ct | 11 pF typ. - Low capacitance preserves signal integrity on high-speed lines (e.g., USB 2.0, MIPI). |
| Package | SL2 (0.62 mm × 0.32 mm) - Ultra-compact footprint enables placement directly at connector or IC pad. |
Pinout & Package
DF2B5BSL,L3F uses the SL2 ultra-miniature surface-mount package (0.62 mm × 0.32 mm, 0.2 mg weight), optimized for space-constrained mobile PCB layouts. Pin 1 and Pin 2 form a bidirectional ESD protection path; grounding one pin enables protection of the other.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | I/O Protection Terminal | Connected to protected signal line (e.g., USB D+, HDMI TMDS); requires Pin 2 tied to GND for operation. |
| Pin 2 | GND Reference Terminal | Must be connected to system ground plane to complete ESD current path; not interchangeable with Pin 1 in layout. |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables sub-6 V clamping at 1 A while sustaining >8 A peak pulse (PPK = 112 W), reducing stress on downstream ICs. |
| Bidirectional ESD protection | Supports protection of either pin as signal line when the other is grounded-no polarity marking required in layout. |
| Ultra-low dynamic resistance | 0.2 Ω typ. minimizes IR drop during ESD discharge, preserving clamping accuracy and response speed. |
| Low 11 pF capacitance | Prevents signal degradation on 480 Mbps USB 2.0 or 1.5 Gbps MIPI D-PHY interfaces without tuning. |
Applications
| Smartphone Front-Panel Interface | Tablet USB-C Port Protection |
|---|---|
Use Scenario: Protecting touch controller I²C lines and proximity sensor inputs exposed on bezel edges. IC Role / Device Role / Timing Role: ESD shunt placed between signal and GND, activated only during ±23 kV transients. Use Value: Prevents latch-up or gate oxide damage in 28 nm touch ICs without adding series resistance or capacitance penalties. |
Use Scenario: Safeguarding USB-C CC and SBU pins against user-handling ESD in thin-profile tablet chassis. IC Role / Device Role / Timing Role: Bidirectional TVS diode mounted adjacent to connector, clamping within <1 ns. Use Value: Maintains USB PD negotiation reliability and prevents false disconnects caused by ESD-induced resets. |
| Notebook PC Display Link (eDP) | Wireless Earbud Charging Case MCU I/O |
Use Scenario: Shielding eDP AUX CH and HPD lines from ESD during hinge flex and lid open/close cycles. IC Role / Device Role / Timing Role: Low-capacitance clamp on differential pair sideband channels. Use Value: Avoids AUX channel communication loss or hot-plug detection failure while meeting 11 pF budget. |
Use Scenario: Protecting GPIOs and I²C lines connecting charging IC to MCU in space-limited earbud case PCB. IC Role / Device Role / Timing Role: Standoff protection for 3.3 V MCU pins interfacing with battery management ICs. Use Value: Enables direct routing from connector to MCU without ferrite beads or RC filters, saving BOM cost and area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | Unidirectional; VRWM = 5.5 V; Ct = 12 pF; VESD = ±8 kV contact. | Requires separate diodes per signal line; unsuitable for bidirectional buses like I²C or USB D+/D−. | Select when protecting higher-voltage (5 V) rails where ±23 kV is not required and unidirectional flow is guaranteed. |
| ESD56081D05-2/TR | Bidirectional; VRWM = 3.3 V; Ct = 10 pF; VESD = ±20 kV contact; RDYN = 0.35 Ω. | Similar SL2 footprint but slightly higher dynamic resistance increases clamping voltage marginally at 8 A. | Choose if sourcing flexibility is prioritized and ±20 kV meets system-level ESD test requirements. |
Compared with TPD2E001DRYR and ESD56081D05-2/TR, the DF2B5BSL,L3F delivers superior ESD immunity (±23 kV) and lower dynamic resistance (0.2 Ω) in the same SL2 package, making it optimal for next-generation smartphone I/O protection where margin and board space are critical.
Availability
DF2B5BSL,L3F is available at Aetrix Electronics and suitable for smartphone front-panel interfaces, tablet USB-C port protection, and notebook eDP auxiliary channel protection requiring stable component supply across high-volume consumer electronics programs.
Supply support for DF2B5BSL,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for mobile, computing, and industrial applications, with emphasis on miniaturization and system-level robustness.
The DF2B5BSL,L3F belongs to Toshiba's SL2-series ESD protection portfolio, engineered specifically for ultra-dense portable electronics where board area, signal integrity, and IEC61000-4-2 compliance are co-constrained.
FAQ
What is the maximum working voltage supported by the DF2B5BSL,L3F?
The DF2B5BSL,L3F has a working peak reverse voltage (VRWM) of 3.3 V, meaning it is rated for continuous operation on 3.3 V signal lines without significant leakage. This makes DF2B5BSL,L3F ideal for protecting I/O pins of microcontrollers, sensors, and interface ICs operating at standard 3.3 V logic levels in smartphones and tablets.
Does the DF2B5BSL,L3F require orientation during PCB placement?
No-the DF2B5BSL,L3F is a bidirectional ESD protection diode, so either pin can serve as the signal input when the other is connected to ground. However, Pin 1 must be routed to the protected line and Pin 2 to GND (or vice versa); the device does not function if both pins float or connect to active signals. This behavior is confirmed in Toshiba's internal circuit diagram and application note for DF2B5BSL,L3F.
How does the DF2B5BSL,L3F compare to standard Zener-based TVS diodes in clamping performance?
The DF2B5BSL,L3F uses snapback-triggered silicon epitaxial planar technology-not Zener breakdown-resulting in lower dynamic resistance (0.2 Ω typ.) and tighter clamping (5.5 V @ 1 A). Standard Zener TVS diodes typically exhibit higher RDYN (>1 Ω) and VC > 7 V under same conditions, increasing risk of IC damage. DF2B5BSL,L3F's architecture is optimized for fast, low-voltage clamping in mobile I/O paths.
Can the DF2B5BSL,L3F protect high-speed interfaces like USB 2.0 or MIPI D-PHY?
Yes-DF2B5BSL,L3F's 11 pF typical capacitance and sub-1 ns response time meet signal integrity requirements for USB 2.0 (480 Mbps) and MIPI D-PHY (1.5 Gbps) interfaces. Its low capacitance avoids data eye closure, and its bidirectional nature supports full-duplex differential signaling without polarity concerns, as verified in Toshiba's application notes for mobile interface protection using DF2B5BSL,L3F.
Is the DF2B5BSL,L3F compliant with RoHS and REACH regulations?
Yes-DF2B5BSL,L3F is manufactured by Toshiba Electronic Devices & Storage Corporation and conforms to EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The SL2 package contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits, and material declarations are available upon request from Aetrix Electronics for DF2B5BSL,L3F.
DF2B5BSL,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 2-SMD, No Lead
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 3.7V
- Voltage - Clamping (Max) @ Ipp:
- 14V
- Current - Peak Pulse (10/1000µs):
- 8A
- Power - Peak Pulse:
- 112W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 11pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SL2
DF2B5BSL,L3F FAQ
1.How can I place an order for DF2B5BSL,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B5BSL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B5BSL,L3F reliable?
The price and inventory of DF2B5BSL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B5BSL,L3F is usually 5 days.
3.What payment methods are accepted for DF2B5BSL,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B5BSL,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B5BSL,L3F?
DF2B5BSL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B5BSL,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B5BSL,L3F?
For technical support, including DF2B5BSL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B5BSL,L3F requirements.
6.How does Aetrix verify that DF2B5BSL,L3F is sourced from the original manufacturer or authorized distributors?
All DF2B5BSL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B5BSL,L3F meets industry standards.
7.What is the process for return or replacement of DF2B5BSL,L3F?
All DF2B5BSL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B5BSL,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B5BSL,L3F part is unused and in its original packaging.
Return procedure for DF2B5BSL,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B5BSL,L3F Tags
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Diodes Incorporated
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