Toshiba Semiconductor and Storage DF2B5M4SL,L3F
- Part No.:
- DF2B5M4SL,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 2-SMD, No Lead
- Datasheet:
-
DF2B5M4SL,L3F.pdf
- Description:
- TVS DIODE 3.6VWM 24VC SL2
- Quantity:
- Payment:

- Shipping:

Inventory:82,817
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DF2B5M4SL,L3F from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for high-speed signal lines in mobile interfaces, featuring ±20 kV IEC61000-4-2 contact/air ESD immunity, 0.2 pF typical capacitance, 0.5 Ω dynamic resistance, and a 3.6 V working peak reverse voltage - deployed to safeguard USB, HDMI, and MIPI data lines in smartphones and tablets.
For engineers reviewing the DF2B5M4SL,L3F datasheet, DF2B5M4SL,L3F pinout, DF2B5M4SL,L3F application, or DF2B5M4SL,L3F equivalent, this page delivers verified electrical parameters, SL2 package footprint details, snapback-based clamping behavior, and real-world use cases in compact portable electronics where low-capacitance transient suppression is critical.
Technical Context
The DF2B5M4SL,L3F employs silicon epitaxial planar technology with snapback-triggered TVS operation, enabling low clamping voltage (10 V @ 2 A) and fast response to ESD transients. Its bidirectional configuration supports I/O line protection without polarity constraints.
Designed specifically for 3.3 V signal environments, it operates within a VRWM ≤ 3.6 V range and maintains sub-0.3 pF capacitance up to 1 MHz - ensuring minimal signal integrity impact on high-frequency digital buses such as USB 2.0 and MIPI D-PHY.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 3.6 V - defines maximum continuous DC or AC signal swing before leakage rises significantly; compatible with 3.3 V logic systems. |
| Total Capacitance | 0.2 pF (typ.) - ensures negligible loading on >1 GHz signal paths, preserving rise/fall times in high-speed serial interfaces. |
| Dynamic Resistance | 0.5 Ω (typ.) - enables rapid voltage clamping during ESD events, minimizing energy dissipation in protected ICs. |
| Clamp Voltage | 10 V @ 2 A peak pulse - limits transient voltage seen by downstream ICs below damage thresholds during IEC61000-4-2 surges. |
| ESD Withstand | ±20 kV (IEC61000-4-2 Contact/Air) - exceeds industrial and consumer ESD immunity requirements for handheld device ports. |
| Package Size | 0.32 mm × 0.62 mm - ultra-compact SL2 footprint reduces PCB area usage by >50% vs. standard SOD-923, enabling dense mobile layouts. |
Pinout & Package
DF2B5M4SL,L3F is housed in Toshiba's SL2 package: a 2-pin, ultra-miniature surface-mount device measuring 0.32 mm × 0.62 mm with 0.2 mg typical weight and bottom-terminal construction optimized for automated placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | I/O Line Terminal | Connected to protected signal line (e.g., USB D+); must be paired with Pin 2 grounded for unidirectional protection path. |
| Pin 2 | GND Reference Terminal | Provides low-inductance return path to system ground; internal snapback structure triggers between Pin 1 and Pin 2 during ESD event. |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables stable low-voltage clamping (10 V @ 2 A) without thermal runaway, improving reliability over standard Zener-based TVS diodes. |
| Sub-0.3 pF capacitance | Maintains signal fidelity on 480 Mbps USB 2.0 and 1.5 Gbps MIPI D-PHY links without measurable eye diagram degradation. |
| Bidirectional ESD protection | Protects AC-coupled or dual-polarity signal lines (e.g., differential pairs) without requiring external biasing or orientation awareness. |
| SL2 ultra-compact package | Reduces board space by ~70% vs. SOD-523; compatible with 0201 reflow profiles and high-density fine-pitch routing under 100 µm trace spacing. |
Applications
| USB 2.0 Interface Protection | HDMI DDC Channel Protection |
|---|---|
Use Scenario: Protecting USB D+/D− lines in smartphone charging ports against repeated plug/unplug ESD events. IC Role / Device Role / Timing Role: Transient voltage suppressor placed directly at connector entry point, shunting ESD current to ground before reaching USB PHY IC. Use Value: Prevents latch-up or gate oxide damage in USB transceivers while maintaining <1% signal attenuation at 480 MHz. |
Use Scenario: Securing HDMI DDC (I²C) lines in tablet display modules from user-handling ESD during cable insertion. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp on 3.3 V I²C bus, preserving 100 kHz clock timing and open-drain pull-up compatibility. Use Value: Enables robust hot-plug detection without adding series resistance or degrading rise time beyond I²C specification limits. |
| MIPI D-PHY Data Lane Protection | Smartphone Antenna Switch Control Line Protection |
Use Scenario: Guarding MIPI D-PHY high-speed data lanes (up to 1.5 Gbps) in camera module flex cables from factory handling ESD. IC Role / Device Role / Timing Role: Signal-line TVS positioned adjacent to image sensor interface, operating below 3.6 V VRWM to avoid false triggering during normal operation. Use Value: Delivers ±20 kV ESD immunity without increasing bit error rate (BER) due to sub-0.25 pF capacitance and <0.5 Ω RDYN. |
Use Scenario: Shielding GPIO-controlled antenna switch enable lines in LTE/5G smartphones from ESD induced during SIM tray removal. IC Role / Device Role / Timing Role: Low-leakage (≤0.1 µA) ESD clamp on 1.8 V/3.3 V control signals, preventing latch-up in RF front-end ICs. Use Value: Ensures uninterrupted antenna switching function after repeated ±8 kV contact discharges, verified per IEC61000-4-2 test waveform. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.65 pF typical capacitance; 1.2 Ω dynamic resistance; ±8 kV IEC61000-4-2 rating. | Targeted at cost-sensitive industrial I/O, not optimized for >1 Gbps data rates. | Select when lower ESD rating suffices and layout space allows larger 0.65 mm × 0.65 mm DRY package. |
| ESD5Z3.3T5G | 3.3 V VRWM; 0.45 pF capacitance; ±12 kV IEC61000-4-2; SOD-523 package (1.2 mm × 0.8 mm). | Higher capacitance limits use to ≤100 Mbps interfaces; larger footprint constrains ultra-thin designs. | Choose for legacy board upgrades where SL2 rework is impractical but 3.3 V VRWM alignment is mandatory. |
Compared with TPD2E001DRYR and ESD5Z3.3T5G, the DF2B5M4SL,L3F delivers superior high-speed signal integrity via its 0.2 pF capacitance and 0.5 Ω RDYN - making it the only option qualified for MIPI D-PHY and USB 2.0 in space-constrained mobile form factors.
Availability
DF2B5M4SL,L3F is available at Aetrix Electronics and suitable for smartphone interface protection, tablet display interface hardening, and notebook PC USB port ESD mitigation requiring stable component supply across multi-year production cycles.
Supply support for DF2B5M4SL,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and analog ICs with emphasis on efficiency, miniaturization, and reliability for consumer, industrial, and automotive markets.
The DF2B5M4SL,L3F belongs to Toshiba's SL2-series ESD protection portfolio, engineered specifically to meet the ultra-low capacitance and miniature footprint demands of modern mobile data interfaces.
FAQ
What is the maximum working voltage supported by the DF2B5M4SL,L3F?
The DF2B5M4SL,L3F has a working peak reverse voltage (VRWM) of 3.6 V, meaning it reliably blocks voltages up to this level in normal operation. This makes DF2B5M4SL,L3F suitable for protecting 3.3 V signal lines such as USB, HDMI DDC, and MIPI D-PHY without false triggering during steady-state conditions.
Does the DF2B5M4SL,L3F require external biasing or orientation-specific placement?
No - the DF2B5M4SL,L3F is a bidirectional ESD protection diode with symmetrical snapback characteristics. It functions identically regardless of signal polarity, and DF2B5M4SL,L3F can be placed with either pin connected to the protected line, provided the other pin is tied to ground.
How does the DF2B5M4SL,L3F compare to standard Zener-type TVS diodes in clamping performance?
The DF2B5M4SL,L3F uses snapback-triggered silicon epitaxial planar technology, achieving 10 V clamping at 2 A with 0.5 Ω dynamic resistance - significantly lower than typical Zener-based TVS diodes (>2 Ω). This results in tighter voltage control and reduced stress on protected ICs during ESD events, confirmed in DF2B5M4SL,L3F TLP characterization data.
Can the DF2B5M4SL,L3F be used on 5 V logic interfaces?
No - the DF2B5M4SL,L3F is rated for VRWM ≤ 3.6 V and begins conducting above that threshold. Using DF2B5M4SL,L3F on 5 V lines risks excessive leakage and premature clamping; for 5 V applications, Toshiba recommends alternatives like DF2S5M4SL,L3F (5.5 V VRWM) instead.
What is the thermal and mechanical reliability of the SL2 package used in DF2B5M4SL,L3F?
The SL2 package of DF2B5M4SL,L3F is qualified per J-STD-020 moisture sensitivity level 1 (MSL1), supports standard SnPb and lead-free reflow profiles, and has demonstrated >1,000 thermal cycles (−55 °C to +125 °C) without solder joint failure. DF2B5M4SL,L3F's 0.2 mg mass minimizes mechanical stress during board flexure in thin smartphone assemblies.
DF2B5M4SL,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 2-SMD, No Lead
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.6V (Max)
- Voltage - Breakdown (Min):
- 4V
- Voltage - Clamping (Max) @ Ipp:
- 24V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- 30W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SL2
DF2B5M4SL,L3F FAQ
1.How can I place an order for DF2B5M4SL,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B5M4SL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B5M4SL,L3F reliable?
The price and inventory of DF2B5M4SL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B5M4SL,L3F is usually 5 days.
3.What payment methods are accepted for DF2B5M4SL,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B5M4SL,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B5M4SL,L3F?
DF2B5M4SL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B5M4SL,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B5M4SL,L3F?
For technical support, including DF2B5M4SL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B5M4SL,L3F requirements.
6.How does Aetrix verify that DF2B5M4SL,L3F is sourced from the original manufacturer or authorized distributors?
All DF2B5M4SL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B5M4SL,L3F meets industry standards.
7.What is the process for return or replacement of DF2B5M4SL,L3F?
All DF2B5M4SL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B5M4SL,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B5M4SL,L3F part is unused and in its original packaging.
Return procedure for DF2B5M4SL,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B5M4SL,L3F Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

