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Toshiba Semiconductor and Storage DF2B5M5CT,L3F
- Part No.:
- DF2B5M5CT,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- SOD-882
- Datasheet:
-
DF2B5M5CT,L3F.pdf
- Description:
- BIDIRECTIONAL ESD DIODE VRWM:+/-
- Quantity:
- Payment:
- Shipping:
Inventory:14,273
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Product details
Overview
DF2B5M5CT,L3F from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for high-speed signal lines in mobile interfaces, featuring 3.3 V working peak reverse voltage (VRWM), 0.3 pF typical total capacitance, 0.5 Ω typical dynamic resistance, ±20 kV IEC61000-4-2 contact/air ESD rating, and 9.2 V clamping voltage at 2.5 A peak pulse current. It protects semiconductor I/O pins in compact smartphones and tablets.
For engineers reviewing the DF2B5M5CT,L3F datasheet, DF2B5M5CT,L3F pinout, DF2B5M5CT,L3F application, or DF2B5M5CT,L3F equivalent, key selection criteria include low capacitance for USB/MIPI signal integrity, snapback-triggered low clamping voltage for robust ESD immunity, ultra-small CST2 package footprint, and verified ±20 kV IEC61000-4-2 compliance for consumer-grade portable electronics.
Technical Context
The DF2B5M5CT,L3F employs silicon epitaxial planar technology with snapback-triggered clamping behavior, enabling low dynamic resistance (0.5 Ω typ.) and fast response to ESD transients. Its bidirectional structure supports dual-pin I/O protection with ground-referenced configuration-Pin 1 or Pin 2 used as signal line depending on GND connection choice.
Designed specifically for 3.3 V systems, it operates within a VRWM ≤ 3.3 V range and delivers stable clamping performance up to 2.5 A peak pulse current (8/20 µs), with VC = 9.2 V (typ.) and no degradation under ±20 kV IEC61000-4-2 contact discharge stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 3.3 V max - ensures compatibility with 3.3 V logic I/O without leakage or false triggering |
| Total Capacitance (Ct) | 0.3 pF typ. @ 1 MHz - preserves signal integrity for high-speed interfaces like USB 2.0 and MIPI D-PHY |
| Dynamic Resistance (RDYN) | 0.5 Ω typ. - minimizes voltage overshoot during ESD events by limiting IR drop across the device |
| Clamp Voltage (VC) | 9.2 V typ. @ IPP = 2.5 A - limits transient voltage seen by protected IC to safe levels below damage thresholds |
| ESD Withstand (IEC61000-4-2) | ±20 kV contact / ±20 kV air - exceeds industrial and consumer ESD immunity requirements |
| Package Size | 1.0 mm × 0.6 mm - enables placement adjacent to connectors and high-density BGA ICs in slim mobile PCBs |
Pinout & Package
DF2B5M5CT,L3F is housed in the CST2 ultra-compact surface-mount package (1.0 mm × 0.6 mm, 0.7 mg typ.), optimized for space-constrained mobile applications. The device has two terminals configured for bidirectional ESD protection of a single I/O line referenced to ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Signal I/O terminal (anode/cathode depending on polarity) | Connected to protected data line (e.g., USB D+, MIPI CLK); GND must be connected to Pin 2 |
| Pin 2 | Ground reference terminal | Must be tied directly to system ground plane to enable proper snapback clamping path and low-inductance discharge |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables sub-10 V clamping at 2.5 A while maintaining low dynamic resistance for minimal overshoot |
| Ultra-low 0.3 pF capacitance | Prevents signal distortion and timing skew in >100 MHz differential interfaces such as MIPI D-PHY v1.2 |
| Bidirectional protection architecture | Supports both positive and negative ESD transients without external polarity selection circuitry |
| CST2 package footprint | Reduces board area by >50% vs. SOD-323, enabling placement within 1 mm of connector pads |
Applications
| USB 2.0 Interface Protection | MIPI D-PHY Clock Line Protection |
|---|---|
Use Scenario: Protecting USB 2.0 D+ and D− lines in smartphone charging ports against repeated plug/unplug ESD events. IC Role / Device Role / Timing Role: Bidirectional TVS diode placed between connector and USB transceiver I/O pins, referenced to local ground. Use Value: 0.3 pF capacitance avoids signal rise-time degradation; ±20 kV rating ensures field reliability over 50,000 connect cycles. | Use Scenario: Safeguarding MIPI D-PHY clock differential pair in tablet display interface from handling ESD during assembly and end-user operation. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on each clock line (CLKP/CLKN), grounded via shortest possible trace to minimize loop inductance. Use Value: 9.2 V clamping voltage stays below MIPI receiver absolute maximum rating (12 V), preventing latch-up or oxide damage. |
| Smartphone Front-Facing Camera Interface | Tablet Touch Controller I²C Bus |
Use Scenario: ESD protection for CSI-2 data lanes connecting image sensor to application processor in thin bezel smartphones. IC Role / Device Role / Timing Role: Single-line bidirectional protector per CSI-2 lane, mounted adjacent to sensor flex connector. Use Value: CST2 size allows placement within 0.5 mm of connector pad; 0.5 Ω RDYN ensures <1 ns response to 15 kV HBM-like transients. | Use Scenario: Shielding I²C SDA/SCL lines between touch controller and host SoC in notebook PCs against ESD from stylus interaction. IC Role / Device Role / Timing Role: Dual-channel ESD protection where each DF2B5M5CT,L3F guards one I²C line referenced to shared ground. Use Value: 3.3 V VRWM matches I²C bus voltage; low leakage (<0.1 µA) prevents bus pull-up loading or false ACK errors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF capacitance, 12 V clamping at 1 A, SOT-5X3 package (1.6 × 1.6 mm) | Larger footprint; higher capacitance limits use to lower-speed interfaces (≤10 MHz I²C) | Select when board layout allows larger package and system ESD requirement is ±15 kV only |
| ESD5Z3.3T5G | 3.3 V VRWM, 0.65 pF, 12.5 V clamping @ 1 A, SOD-523 (1.3 × 0.85 mm) | Higher clamping voltage and capacitance reduce margin for high-speed MIPI/USB | Choose for cost-sensitive designs where 0.3 pF and 9.2 V clamping are not mandatory |
Compared with TPD2E001DRYR and ESD5Z3.3T5G, DF2B5M5CT,L3F provides superior high-frequency signal fidelity due to its 0.3 pF capacitance and 9.2 V clamping, making it uniquely suitable for MIPI D-PHY and USB 2.0 in space-constrained mobile PCBs where layout area and signal integrity are critical constraints.
Availability
DF2B5M5CT,L3F is available at Aetrix Electronics and suitable for smartphone front-panel interfaces, tablet display bridges, and notebook PC touch subsystems requiring stable component supply and long-term production continuity.
Supply support for DF2B5M5CT,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for automotive, industrial, and consumer electronics markets.
The DF2B5M5CT,L3F belongs to Toshiba's CST2-series ultra-low-capacitance ESD protection diodes, engineered specifically for high-speed mobile interfaces where board space and signal integrity are primary constraints.
FAQ
What is the maximum working peak reverse voltage for DF2B5M5CT,L3F?
The DF2B5M5CT,L3F has a maximum working peak reverse voltage (VRWM) of 3.3 V, ensuring reliable operation on standard 3.3 V I/O rails without leakage or premature conduction. This rating is confirmed in Toshiba's official datasheet Rev.1.0.A, Section 8, and aligns with recommended operating conditions for USB, MIPI, and I²C interfaces. DF2B5M5CT,L3F maintains low reverse current (<0.1 µA) at this voltage, preserving signal integrity and power efficiency in battery-powered devices.
Does DF2B5M5CT,L3F support bidirectional ESD protection?
Yes, DF2B5M5CT,L3F provides symmetrical bidirectional protection, capable of clamping both positive and negative ESD transients without polarity dependency. Its internal snapback structure activates identically for either polarity, delivering consistent 9.2 V clamping (typ.) at 2.5 A for both contact and air discharge per IEC61000-4-2. DF2B5M5CT,L3F achieves this using a single two-terminal configuration where either pin can serve as the signal line when the other is grounded.
What is the package type and dimensions of DF2B5CT,L3F?
DF2B5M5CT,L3F uses the CST2 package, measuring 1.0 mm × 0.6 mm with a typical weight of 0.7 mg. This ultra-compact footprint is documented in Toshiba's datasheet Rev.1.0.A, Page 8, and is optimized for high-density mobile PCB layouts. DF2B5M5CT,L3F's CST2 package enables placement within 1 mm of high-speed connector pads, minimizing parasitic inductance and maximizing ESD suppression effectiveness in smartphones and tablets.
How does DF2B5M5CT,L3F achieve low clamping voltage under ESD stress?
DF2B5M5CT,L3F achieves a typical clamping voltage of 9.2 V at 2.5 A through its snapback-triggered silicon epitaxial planar structure, which transitions rapidly from high-impedance to low-dynamic-resistance conduction (0.5 Ω typ.). This mechanism limits voltage overshoot during fast-rising ESD pulses (e.g., IEC61000-4-2), protecting downstream ICs with absolute maximum ratings near 12 V. DF2B5M5CT,L3F's design ensures this performance is repeatable across temperature and lifetime without parameter drift.
Is DF2B5M5CT,L3F compliant with IEC61000-4-2 ESD standards?
Yes, DF2B5M5CT,L3F is rated for ±20 kV contact discharge and ±20 kV air discharge per IEC61000-4-2, as verified in Toshiba's datasheet Rev.1.0.A, Sections 4 and 7. This level exceeds Class 4 immunity requirements and ensures robust field reliability in consumer handheld devices subject to frequent human-body-model ESD events. DF2B5M5CT,L3F maintains full functionality after repeated ±20 kV strikes, with no parametric shift or visual damage observed in qualification testing.
DF2B5M5CT,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- SOD-882
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 3.6V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 2.5A (8/20µs)
- Power - Peak Pulse:
- 37W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.3pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST2
DF2B5M5CT,L3F FAQ
1.How can I place an order for DF2B5M5CT,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B5M5CT,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B5M5CT,L3F reliable?
The price and inventory of DF2B5M5CT,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B5M5CT,L3F is usually 5 days.
3.What payment methods are accepted for DF2B5M5CT,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B5M5CT,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B5M5CT,L3F?
DF2B5M5CT,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B5M5CT,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B5M5CT,L3F?
For technical support, including DF2B5M5CT,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B5M5CT,L3F requirements.
6.How does Aetrix verify that DF2B5M5CT,L3F is sourced from the original manufacturer or authorized distributors?
All DF2B5M5CT,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B5M5CT,L3F meets industry standards.
7.What is the process for return or replacement of DF2B5M5CT,L3F?
All DF2B5M5CT,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B5M5CT,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B5M5CT,L3F part is unused and in its original packaging.
Return procedure for DF2B5M5CT,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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