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Toshiba Semiconductor and Storage DF2B5M5SL,L3F
- Part No.:
- DF2B5M5SL,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 2-SMD, No Lead
- Datasheet:
-
DF2B5M5SL,L3F.pdf
- Description:
- TVS DIODE 3.3VWM 25VC SL2
- Quantity:
- Payment:
- Shipping:
Inventory:7,530
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Product details
Overview
DF2B5M5SL,L3F from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for high-speed signal lines in mobile interfaces, featuring 3.3 V working peak reverse voltage (VRWM), ±20 kV IEC61000-4-2 contact/air ESD immunity, 0.3 pF typical capacitance, 0.5 Ω dynamic resistance, and ultra-compact SL2 package (0.62 mm × 0.32 mm).
For engineers reviewing the DF2B5M5SL,L3F datasheet, DF2B5M5SL,L3F pinout, DF2B5M5SL,L3F application, or DF2B5M5SL,L3F equivalent, this device is selected for space-constrained, high-frequency I/O protection where low clamping voltage (9.2 V @ 2.5 A), snapback behavior, and sub-0.45 pF max capacitance are critical to signal integrity and ESD robustness.
Technical Context
The DF2B5M5SL,L3F employs silicon epitaxial planar technology with snapback-triggered TVS operation, enabling low clamping voltage (VC = 9.2 V typ. @ IPP = 2.5 A) and fast response to ESD transients. Its bidirectional structure supports dual-pin I/O protection with ground-referenced configuration.
Designed specifically for 3.3 V signal rails, it operates within a VRWM ≤ 3.3 V range and delivers 37 W peak pulse power (8/20 µs). The device's TLP-characterized dynamic resistance (0.5 Ω typ.) ensures minimal voltage overshoot during transient events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 3.3 V maximum - ensures safe operation on standard 3.3 V I/O lines without leakage or false triggering. |
| Ct | 0.3 pF typical (max 0.45 pF) - preserves signal integrity up to multi-GHz frequencies in USB, MIPI, and audio paths. |
| RDYN | 0.5 Ω typical - minimizes voltage rise across the diode during ESD events, reducing stress on protected ICs. |
| VESD | ±20 kV per IEC61000-4-2 (Contact/Air) - exceeds industrial ESD immunity requirements for handheld electronics. |
| VC @ IPP=2.5A | 9.2 V typical - clamps transients below logic-level damage thresholds of 3.3 V interface ICs. |
| Package | SL2 (0.62 mm × 0.32 mm, 0.2 mg) - enables placement adjacent to connectors and high-density BGA footprints. |
Pinout & Package
DF2B5M5SL,L3F uses a 2-terminal SL2 ultra-miniature surface-mount package. Pin 1 and Pin 2 are symmetrical and interchangeable as I/O and ground terminals depending on layout: Pin 2 must connect to GND when protecting Pin 1; Pin 1 must connect to GND when protecting Pin 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | I/O or GND | Configurable terminal - serves as protected signal line when Pin 2 is grounded, or as ground return when Pin 2 is the signal path. |
| Pin 2 | I/O or GND | Configurable terminal - serves as protected signal line when Pin 1 is grounded, or as ground return when Pin 1 is the signal path. |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables low VC (9.2 V) and stable conduction during ESD, avoiding thermal runaway seen in conventional Zener-based TVS. |
| Bidirectional protection | Supports ±20 kV ESD on both polarities without external polarity selection - ideal for AC-coupled or differential data lines. |
| Sub-0.45 pF capacitance | Prevents signal attenuation and timing skew in >1 GHz interfaces such as MIPI D-PHY and USB 3.x SuperSpeed lanes. |
| 0.62 mm × 0.32 mm SL2 footprint | Reduces PCB area by >50% vs. SOD-523, enabling placement directly at connector entry points in slim smartphones and tablets. |
Applications
| Smartphone Front-Facing Camera Interface | Tablet USB-C Data Lane Protection |
|---|---|
Use Scenario: Protecting MIPI CSI-2 differential pairs between image sensor and SoC against handling ESD during assembly and end-user operation. IC Role / Device Role / Timing Role: Bidirectional ESD clamp placed inline on each data lane, referenced to system ground. Use Value: 0.3 pF capacitance avoids jitter accumulation; 9.2 V clamping prevents latch-up in 3.3 V tolerant PHY receivers. |
Use Scenario: Safeguarding USB 3.2 Gen 1 SuperSpeed+ differential pairs (TX/RX) on tablet host ports exposed to frequent cable insertion/removal. IC Role / Device Role / Timing Role: Per-lane TVS diode with ground-referenced snapback action, mounted within 3 mm of connector pad. Use Value: Low RDYN (0.5 Ω) limits voltage overshoot to <10 V during ±8 kV contact discharge, preserving eye diagram integrity. |
| Notebook PC Audio Jack Line | Industrial Handheld Scanner I/O Port |
Use Scenario: Shielding 3.5 mm TRRS audio jack analog lines (MIC, HP_L/R) from ESD during headphone plugging/unplugging. IC Role / Device Role / Timing Role: Single-line ESD suppressor on each analog signal path, operating at DC–20 kHz bandwidth. Use Value: VRWM = 3.3 V ensures no forward conduction during normal bias; ±20 kV rating covers worst-case user discharge. |
Use Scenario: Hardening RS-232 or TTL-level UART lines on ruggedized barcode scanners subjected to field ESD in warehouse environments. IC Role / Device Role / Timing Role: Point-of-entry protection on serial interface pins before level-shifting or transceiver ICs. Use Value: SL2 package allows co-location with connector pads on 4-layer compact PCBs; 37 W PPK handles multiple ESD strikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR (Texas Instruments) | Unidirectional, 5.5 V VRWM, 0.65 pF typical, ±8 kV IEC61000-4-2 contact | Requires separate diodes per signal line; not suitable for bidirectional AC-coupled interfaces without redesign. | Select when unidirectional protection suffices and higher VRWM tolerance is needed for 5 V systems. |
| ESD5Z3.3T5G (ON Semiconductor) | Bidirectional, 3.3 V VRWM, 0.6 pF typical, ±12 kV IEC61000-4-2 contact, SOD-523 package (1.2 × 0.8 mm) | Larger footprint increases trace inductance; higher capacitance degrades >500 MHz signal fidelity. | Choose only if SL2 placement is mechanically infeasible and 0.6 pF capacitance remains acceptable for target data rate. |
Compared with TPD2E001DRYR and ESD5Z3.3T5G, DF2B5M5SL,L3F uniquely combines bidirectional ±20 kV ESD rating, 0.3 pF capacitance, and SL2 size-enabling first-tier protection in next-gen mobile I/O without sacrificing signal bandwidth or board area.
Availability
DF2B5M5SL,L3F is available at Aetrix Electronics and suitable for smartphone camera modules, tablet USB-C ports, notebook audio jacks, industrial handheld scanners, and other high-density portable electronics requiring stable component supply and guaranteed long-term manufacturability.
Supply support for DF2B5M5SL,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, miniaturization, and energy efficiency for consumer, industrial, and automotive markets.
The DF2B5M5SL,L3F belongs to Toshiba's SL2-series ESD protection portfolio, engineered specifically for ultra-compact, high-speed I/O protection in space-constrained mobile platforms where sub-0.5 pF capacitance and ±20 kV immunity are mandatory.
FAQ
What is the maximum working voltage supported by DF2B5M5SL,L3F?
The DF2B5M5SL,L3F has a working peak reverse voltage (VRWM) of 3.3 V maximum, making it suitable for protection of 3.3 V signal lines such as those found in MIPI, USB 2.0, and audio interfaces. Operation above this voltage risks premature conduction and increased leakage current, so DF2B5M5SL,L3F must be used only in circuits where steady-state reverse voltage remains ≤3.3 V.
Does DF2B5M5SL,L3F require orientation-specific placement on PCB?
No - DF2B5M5SL,L3F is a bidirectional device with symmetrical pin functionality. Either pin can serve as the protected I/O line while the other connects to ground, as specified in Toshiba's internal circuit note. This eliminates orientation constraints during automated placement and simplifies layout for differential or dual-signal protection schemes using DF2B5M5SL,L3F.
What is the clamping voltage of DF2B5M5SL,L3F under real ESD stress?
Under a 2.5 A peak pulse current (matching IEC61000-4-2 8/20 µs surge profile), DF2B5M5SL,L3F clamps to 9.2 V typical (15 V max). This value is measured using TLP characterization and reflects actual transient suppression performance - ensuring protected ICs experience less than 10 V overshoot during ±20 kV contact discharge events.
Can DF2B5M5SL,L3F be used for USB 3.2 Gen 2 (10 Gbps) differential lanes?
Yes - DF2B5M5SL,L3F's 0.3 pF typical capacitance and ultra-low dynamic resistance (0.5 Ω) minimize insertion loss and phase distortion in 10 Gbps channels. Toshiba's S21 curve (Fig. 9.4) confirms usable bandwidth beyond 15 GHz, making DF2B5M5SL,L3F appropriate for direct placement on SuperSpeed+ TX/RX pairs without equalization penalty.
Is DF2B5M5SL,L3F compliant with RoHS and REACH regulations?
Yes - DF2B5M5SL,L3F is manufactured by Toshiba Electronic Devices & Storage Corporation in compliance with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full material declarations and test reports are available upon request through Aetrix Electronics' technical support for DF2B5M5SL,L3F.
DF2B5M5SL,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 2-SMD, No Lead
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 3.6V
- Voltage - Clamping (Max) @ Ipp:
- 25V (Typ)
- Current - Peak Pulse (10/1000µs):
- 2.5A (8/20µs)
- Power - Peak Pulse:
- 37W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.3pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SL2
DF2B5M5SL,L3F FAQ
1.How can I place an order for DF2B5M5SL,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B5M5SL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B5M5SL,L3F reliable?
The price and inventory of DF2B5M5SL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B5M5SL,L3F is usually 5 days.
3.What payment methods are accepted for DF2B5M5SL,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B5M5SL,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B5M5SL,L3F?
DF2B5M5SL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B5M5SL,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B5M5SL,L3F?
For technical support, including DF2B5M5SL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B5M5SL,L3F requirements.
6.How does Aetrix verify that DF2B5M5SL,L3F is sourced from the original manufacturer or authorized distributors?
All DF2B5M5SL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B5M5SL,L3F meets industry standards.
7.What is the process for return or replacement of DF2B5M5SL,L3F?
All DF2B5M5SL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B5M5SL,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B5M5SL,L3F part is unused and in its original packaging.
Return procedure for DF2B5M5SL,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B5M5SL,L3F Tags
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