Toshiba Semiconductor and Storage DF2B5SL,L3F

Overview

DF2B5SL,L3F from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for signal-line protection in mobile device interfaces. It features a working peak reverse voltage of 3.3 V, ±17 kV IEC61000-4-2 contact ESD rating, 0.25 Ω typical dynamic resistance, 9.5 V clamping voltage at 5.5 A, and ultra-compact SL2 package (0.62 mm × 0.32 mm). It is deployed on smartphone USB, HDMI, and SIM card interface lines.

For engineers reviewing the DF2B5SL,L3F datasheet, DF2B5SL,L3F pinout, DF2B5SL,L3F application, or DF2B5SL,L3F equivalent, this page delivers verified electrical parameters, snapback-based clamping behavior, low-capacitance (7.2 pF) signal integrity support, and real-world mobile interface protection use cases - all critical for high-density PCB layout and I/O-level ESD hardening.

Technical Context

The DF2B5SL,L3F employs silicon epitaxial planar technology with snapback-triggered TVS operation to achieve low dynamic resistance and stable clamping below 10 V during transient events. Its bidirectional structure supports both positive and negative ESD pulses without polarity constraints.

It operates within a 3.3 V signal environment, with guaranteed VRWM ≤ 3.3 V and VBR ≥ 3.6 V (typ. 4.5 V), enabling compatibility with standard low-voltage I/O rails. The 7.2 pF total capacitance ensures minimal signal distortion on high-speed lines such as USB 2.0 and MIPI D-PHY.

Key Specifications

Pinout & Package

The DF2B5SL,L3F is housed in the SL2 ultra-compact surface-mount package (0.62 mm × 0.32 mm, 0.2 mg typical weight), optimized for space-constrained mobile applications. Pin 1 and Pin 2 form a bidirectional ESD protection path between I/O and GND.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with TPD2E001DRYR and ESD5Z3.3T5G, the DF2B5SL,L3F delivers superior ESD robustness (±17 kV), lower dynamic resistance (0.25 Ω), and tighter capacitance control (7.2 pF), making it optimal for high-speed, space-constrained mobile I/O protection where signal fidelity and miniaturization are critical.

Availability

DF2B5SL,L3F is available at Aetrix Electronics and suitable for smartphone USB interfaces, tablet HDMI ports, notebook SIM card slots, mobile SSD M.2 connectors, and other high-density portable electronics requiring stable component supply and certified ESD immunity.

Supply support for DF2B5SL,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for consumer, industrial, and automotive applications.

The DF2B5SL,L3F belongs to Toshiba's SL2-series ESD protection diode family, engineered specifically for ultra-compact, high-performance I/O line protection in next-generation mobile platforms.

FAQ

What is the maximum working peak reverse voltage of the DF2B5SL,L3F?

The DF2B5SL,L3F has a maximum working peak reverse voltage (VRWM) of 3.3 V, ensuring reliable operation on standard 3.3 V logic I/O lines without leakage or premature conduction. This rating is specified in the Absolute Maximum Ratings table and confirmed across multiple test conditions in the Electrical Characteristics section of the official Toshiba datasheet Rev.1.0.A. The DF2B5SL,L3F maintains stable performance up to this voltage under normal operating conditions.

Does the DF2B5SL,L3F support bidirectional ESD protection?

Yes, the DF2B5SL,L3F provides bidirectional ESD protection with ±17 kV rating per IEC61000-4-2 (Contact), enabled by its symmetric snapback structure. Pin 1 and Pin 2 function interchangeably as I/O and GND terminals depending on layout-no external polarity selection is needed. This capability is explicitly documented in Section 10 (Internal Circuit) and Section 2 (Applications) of the Toshiba DF2B5SL,L3F datasheet Rev.1.0.A.

What is the typical dynamic resistance of the DF2B5SL,L3F and why does it matter?

The DF2B5SL,L3F has a typical dynamic resistance (RDYN) of 0.25 Ω, measured using TLP characterization between 8 A and 16 A. This low value enables rapid shunting of ESD current, minimizing voltage overshoot during transients and reducing stress on downstream ICs. The DF2B5SL,L3F achieves this via silicon epitaxial planar construction and snapback triggering, as detailed in Section 3 (Features) and Section 6.2 (TLP Characteristics) of the Toshiba datasheet Rev.1.0.A.

Can the DF2B5SL,L3F be used on USB 2.0 data lines?

Yes, the DF2B5SL,L3F is qualified for USB 2.0 data line protection due to its 7.2 pF typical total capacitance and 9.5 V clamping voltage at 5.5 A. These parameters preserve signal integrity at 480 Mbps while preventing damage to USB transceivers during ESD events. Toshiba explicitly cites smartphone USB interfaces in Section 2 (Applications), and the low capacitance is verified in Section 6.1 (Quick Reference Data) of the DF2B5SL,L3F datasheet Rev.1.0.A.

What package type does the DF2B5SL,L3F use and what are its dimensions?

The DF2B5SL,L3F uses the SL2 package, also known as "SL2" in Toshiba documentation, with physical dimensions of 0.62 mm × 0.32 mm and a typical weight of 0.2 mg. This ultra-compact outline matches 0201 land patterns and is specified in Section 4 (Packaging) and Package Dimensions (page 8) of the Toshiba DF2B5SL,L3F datasheet Rev.1.0.A. The SL2 footprint enables placement directly at high-speed connector entry points in space-constrained mobile PCBs.