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Toshiba Semiconductor and Storage DF2B6.8M1ACT,L3F
- Part No.:
- DF2B6.8M1ACT,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- SOD-882
- Datasheet:
-
DF2B6.8M1ACT,L3F.pdf
- Description:
- TVS DIODE 5VWM 20VC CST2
- Quantity:
- Payment:
- Shipping:
Inventory:56,831
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Product details
Overview
DF2B6.8M1ACT from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for high-speed signal lines in mobile interfaces, featuring a working peak reverse voltage of 5.0 V, total capacitance of 0.3 pF (typ.), dynamic resistance of 0.8 Ω (typ.), ±12 kV contact ESD rating per IEC61000-4-2, and ultra-compact CST2 package (1.0 mm × 0.6 mm). It protects baseband and RF I/O pins in smartphones and tablets against electrostatic discharge.
For engineers reviewing the DF2B6.8M1ACT datasheet, DF2B6.8M1ACT pinout, DF2B6.8M1ACT application, or DF2B6.8M1ACT equivalent, key selection criteria include low clamping voltage under 2.5 A pulse, sub-0.5 pF capacitance for minimal signal distortion, bidirectional ESD robustness, and compatibility with 5.0 V logic-level interfaces in space-constrained PCB layouts.
Technical Context
The DF2B6.8M1ACT is a silicon epitaxial planar TVS diode configured as a bidirectional ESD clamp with two terminals. Its internal structure enables symmetrical clamping behavior for both positive and negative transients without polarity dependency.
It operates within a recommended VRWM ≤ 5.0 V range and delivers clamping voltage of 12 V at 1 A and 15 V at 2.5 A per IEC61000-4-5 8/20 µs waveform, supported by low dynamic resistance (0.8 Ω typ.) to minimize voltage overshoot during fast ESD events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 5.0 V max - ensures safe operation on 5.0 V signal rails without leakage or premature conduction. |
| Total Capacitance | 0.3 pF typ. @ 1 MHz - preserves signal integrity in high-speed USB 2.0, HDMI, or MIPI interfaces. |
| Dynamic Resistance | 0.8 Ω typ. - reduces clamping voltage rise during ESD pulses, enhancing downstream IC protection. |
| ESD Withstand (Contact) | ±12 kV per IEC61000-4-2 - meets industrial-grade ESD immunity requirements for handheld device ports. |
| Clamp Voltage (IPP = 2.5 A) | 15 V max - limits transient voltage seen by protected ICs during surge events. |
| Package Size | 1.0 mm × 0.6 mm - enables placement adjacent to connectors or IC pads in ultra-dense mobile PCBs. |
Pinout & Package
The DF2B6.8M1ACT is housed in the CST2 surface-mount package (1.0 mm × 0.6 mm, 0.7 mg typical weight), optimized for automated assembly and high-density routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | I/O Signal Terminal | Connected to protected data line (e.g., USB D+, MIPI DSI); must be paired with Pin 2 grounded for proper clamping. |
| Pin 2 | GND Reference Terminal | Must be connected to system ground plane with low-inductance path to ensure effective ESD current shunting. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional ESD Clamping | Enables symmetric protection of AC-coupled or differential signal lines without polarity constraints. |
| Sub-0.5 pF Capacitance | Maintains >480 Mbps signal bandwidth in USB 2.0 paths with negligible insertion loss or timing skew. |
| Low Dynamic Resistance | 0.8 Ω typ. ensures <15 V clamping at 2.5 A, reducing stress on sensitive transceivers and PHYs. |
| Ultra-Small CST2 Footprint | Reduces board area by >60% vs. SOD-323, enabling placement directly at connector entry points. |
Applications
| Smartphone Front-Facing Camera Interface | Tablet USB 2.0 OTG Port |
|---|---|
Use Scenario: Protecting MIPI CSI-2 data lanes between image sensor and application processor from user-handling ESD. IC Role / Device Role / Timing Role: Bidirectional ESD clamp placed inline on differential clock and data pairs, referenced to local ground. Use Value: 0.3 pF capacitance prevents signal degradation across 1.5 Gbps MIPI links while delivering ±12 kV contact ESD immunity. |
Use Scenario: Safeguarding USB D+ and D− lines in tablet host-mode OTG circuits exposed to frequent cable insertion/removal. IC Role / Device Role / Timing Role: Two-device configuration (one per line) with grounded cathode/anode arrangement for full-duplex transient suppression. Use Value: 5.0 V VRWM aligns with USB 2.0 signaling levels; 15 V clamping at 2.5 A prevents PHY latch-up during hot-plug events. |
| Notebook PC HDMI Type-A Port | Industrial Handheld Scanner Data Port |
Use Scenario: Shielding HDMI TMDS channels from ESD induced by user contact with metal connector shells during docking. IC Role / Device Role / Timing Role: Single-line protection per TMDS channel (CLK, D0, D1, D2), each with dedicated DF2B6.8M1ACT to GND. Use Value: 0.8 Ω dynamic resistance minimizes voltage overshoot during 15 kV air-gap discharges, preserving HDCP handshake reliability. |
Use Scenario: Securing RS-232 or TTL-level serial interface on ruggedized barcode scanners subjected to field ESD in warehouse environments. IC Role / Device Role / Timing Role: Low-capacitance clamp on TX/RX lines referenced to chassis ground, compatible with 3.3 V or 5 V logic. Use Value: Compact CST2 footprint allows integration into sealed enclosures with minimal PCB real estate; ±12 kV contact rating exceeds EN 61000-4-2 Level 4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NZQ20000DT1G | Higher capacitance (0.6 pF typ.), same 5.0 V VRWM and ±12 kV contact rating; larger SOD-923 package (1.0 mm × 0.6 mm × 0.4 mm). | Less suitable for >500 Mbps interfaces due to doubled capacitance; better thermal dissipation for repetitive surges. | Select when higher peak pulse power handling (100 W) is prioritized over signal fidelity in lower-speed UART/UART-I²C lines. |
| Vishay ESDBLE5.0D1W | Lower clamping voltage (10.5 V at 2.5 A), identical 0.3 pF capacitance and CST2 package; rated for ±15 kV air discharge only. | Better transient suppression margin for noise-sensitive analog front-ends but lacks guaranteed ±12 kV contact rating. | Prefer for battery-powered IoT sensors where clamping voltage headroom is critical, provided air-discharge immunity suffices. |
Compared with NZQ20000DT1G and ESDBLE5.0D1W, the DF2B6.8M1ACT uniquely balances ultra-low capacitance, verified ±12 kV contact ESD performance, and industry-standard CST2 footprint-making it optimal for space-constrained, high-speed mobile I/O protection where signal integrity and certified ESD robustness are jointly required.
Availability
DF2B6.8M1ACT is available at Aetrix Electronics and suitable for smartphone camera modules, tablet USB OTG ports, and notebook HDMI interfaces requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for DF2B6.8M1ACT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for consumer, industrial, and automotive markets.
The DF2B6.8M1ACT belongs to Toshiba's ESD protection diode product line, engineered specifically for high-speed digital interfaces in portable electronics where minimal capacitance and certified IEC61000-4-2 immunity are mandatory.
FAQ
What is the maximum working voltage supported by the DF2B6.8M1ACT?
The DF2B6.8M1ACT has a working peak reverse voltage (VRWM) of 5.0 V maximum, meaning it is rated for continuous operation on 5.0 V signal lines without significant leakage current. This makes the DF2B6.8M1ACT suitable for protecting USB 2.0, MIPI, and other 5.0 V logic interfaces while remaining inactive during normal operation.
Does the DF2B6.8M1ACT support bidirectional ESD protection?
Yes, the DF2B6.8M1ACT is a bidirectional TVS diode, providing symmetrical clamping for both positive and negative ESD transients. Its internal structure allows either pin to serve as the signal terminal when the other is grounded, making the DF2B6.8M1ACT ideal for AC-coupled or differential data lines like HDMI or MIPI CSI-2.
What is the clamping voltage of the DF2B6.8M1ACT at 2.5 A peak pulse current?
The DF2B6.8M1ACT delivers a maximum clamping voltage (VC) of 20 V at 2.5 A peak pulse current (per IEC61000-4-5 8/20 µs waveform), with a typical value of 15 V. This clamping performance-combined with its 0.8 Ω dynamic resistance-ensures protected ICs experience minimal overvoltage stress during ESD events, confirming the DF2B6.8M1ACT's suitability for sensitive transceivers.
Can the DF2B6.8M1ACT be used on 3.3 V signal lines?
Yes, the DF2B6.8M1ACT is compatible with 3.3 V signal lines because its 5.0 V VRWM provides sufficient margin above the 3.3 V rail, ensuring no conduction during normal operation. The DF2B6.8M1ACT maintains low leakage (<0.5 µA at VRWM) and preserves signal integrity via its 0.3 pF capacitance-critical for high-speed 3.3 V interfaces like SDIO or eMMC.
What package type does the DF2B6.8M1ACT use, and what are its dimensions?
The DF2B6.8M1ACT uses the CST2 package, a Toshiba-proprietary ultra-compact surface-mount outline measuring 1.0 mm × 0.6 mm with a typical weight of 0.7 mg. This package enables direct placement next to connectors or IC pads in mobile PCBs, and the DF2B6.8M1ACT's pin configuration (Pin 1 = signal, Pin 2 = GND) is standardized for automated assembly and IPC-compliant reflow.
DF2B6.8M1ACT,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- SOD-882
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 6V
- Voltage - Clamping (Max) @ Ipp:
- 20V
- Current - Peak Pulse (10/1000µs):
- 2.5A (8/20µs)
- Power - Peak Pulse:
- 50W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.3pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST2
DF2B6.8M1ACT,L3F FAQ
1.How can I place an order for DF2B6.8M1ACT,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B6.8M1ACT,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B6.8M1ACT,L3F reliable?
The price and inventory of DF2B6.8M1ACT,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B6.8M1ACT,L3F is usually 5 days.
3.What payment methods are accepted for DF2B6.8M1ACT,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B6.8M1ACT,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B6.8M1ACT,L3F?
DF2B6.8M1ACT,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B6.8M1ACT,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B6.8M1ACT,L3F?
For technical support, including DF2B6.8M1ACT,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B6.8M1ACT,L3F requirements.
6.How does Aetrix verify that DF2B6.8M1ACT,L3F is sourced from the original manufacturer or authorized distributors?
All DF2B6.8M1ACT,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B6.8M1ACT,L3F meets industry standards.
7.What is the process for return or replacement of DF2B6.8M1ACT,L3F?
All DF2B6.8M1ACT,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B6.8M1ACT,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B6.8M1ACT,L3F part is unused and in its original packaging.
Return procedure for DF2B6.8M1ACT,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B6.8M1ACT,L3F Tags
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