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Toshiba Semiconductor and Storage DF2B6M4BSL,L3F

Part No.:
DF2B6M4BSL,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Category:
TVS Diodes
Package:
2-SMD, No Lead
Datasheet:
AetrixDF2B6M4BSL,L3F.pdf
Description:
UNI-DIR ESD PR DI SOD-962 V(ESD)
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,429

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Product details

Overview

DF2B6M4BSL from Toshiba Electronic Devices & Storage Corporation is an ultra-low-capacitance ESD protection diode designed for high-frequency signal lines in antennas and high-speed interfaces. It delivers 0.12 pF typical capacitance, 5.5 V working peak reverse voltage, 215 V clamp voltage at +8 kV contact discharge, and operates in a 0.62 mm × 0.32 mm SL2 package for mobile RF front-end and USB/HDMI protection.

For engineers reviewing the DF2B6M4BSL datasheet, DF2B6M4BSL pinout, DF2B6M4BSL application, or DF2B6M4BSL equivalent, key selection criteria include sub-0.15 pF capacitance, low dynamic resistance (1.05 Ω), IEC61000-4-2 ±8 kV contact/air robustness, and suitability for 2.4 GHz/5.0 GHz antenna and interface protection where signal integrity is critical.

Technical Context

The DF2B6M4BSL employs silicon epitaxial planar technology to achieve ultra-low junction capacitance and low harmonic distortion-measured at –65.5 dBm (2nd) and –54.4 dBm (3rd) under 2.4 GHz/20 dBm input. Its bidirectional clamping structure supports dual-pin I/O protection with ground-referenced configuration.

It meets IEC61000-4-2 (±8 kV contact/air) and IEC61000-4-5 (8/20 µs, 30 W peak power) standards. The device exhibits 1.05 Ω dynamic resistance derived from TLP testing between 8 A and 16 A, enabling fast transient response and stable clamping below 25 V at 2 A IPP.

Key Specifications

ParameterValue and Actual Design Meaning
Working Peak Reverse Voltage5.5 V - Ensures compatibility with 5.0 V signal rails without leakage or premature conduction.
Total Capacitance0.12 pF (typ), ≤0.15 pF (max) - Preserves signal integrity on 2.4 GHz/5.0 GHz antenna and high-speed serial links.
Dynamic Resistance1.05 Ω - Enables low-voltage clamping and minimal overshoot during fast ESD transients.
Clamp Voltage (VC)25 V @ 2 A IPP - Limits voltage stress on protected ICs during IEC61000-4-2 events.
ESD Withstand±8 kV contact / ±8 kV air per IEC61000-4-2 - Meets industrial and portable electronics immunity requirements.
Package Size0.62 mm × 0.32 mm (SL2) - Supports ultra-dense PCB layouts in smartphones and wearables.

Pinout & Package

DF2B6M4BSL uses a 2-terminal SL2 package (0.62 mm × 0.32 mm, 0.2 mg typical weight), optimized for RF signal path integration. Pin 1 and Pin 2 are symmetrical bidirectional terminals; either may serve as I/O when the other is connected to GND.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1I/O Terminal (anode/cathode interchangeable)Connected to protected signal line (e.g., antenna feed, USB D+, HDMI TMDS); requires external GND connection on Pin 2.
Pin 2GND Reference TerminalMust be tied to system ground to complete ESD current path; no internal GND bias-external grounding is mandatory.

Key Features

FeatureDesign Value
Ultra-low capacitance0.12 pF typ ensures <1% insertion loss at 5.0 GHz, preserving RF gain and return loss in antenna matching networks.
Bidirectional ESD clampingSupports symmetric transient suppression on AC-coupled lines without polarity constraints-ideal for differential interfaces like DisplayPort and PCIe.
Low harmonic distortion–65.5 dBm 2nd harmonic @ 2.4 GHz/20 dBm enables clean signal transmission in Wi-Fi/BT front-ends without spectral regrowth.
SL2 footprint compatibility0.62 mm × 0.32 mm outline matches IPC-7351B LCC-2 land pattern, enabling drop-in replacement in space-constrained mobile designs.

Applications

Wi-Fi/Bluetooth Antenna ProtectionUSB 3.x / HDMI Interface Protection

Use Scenario: Protecting 2.4 GHz/5.0 GHz antenna feedlines in smartphones and IoT gateways from human-body ESD events.

IC Role / Device Role / Timing Role: Bidirectional TVS diode placed in series with RF trace, shunting ESD energy to GND before reaching PA/LNA.

Use Value: 0.12 pF capacitance avoids detuning of antenna impedance matching, maintaining >75% radiation efficiency post-protection.

Use Scenario: Safeguarding high-speed differential pairs in USB 3.2 Gen 2 and HDMI 2.1 sources/sinks against contact discharge.

IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on each signal line (TX/RX, TMDS+/-), grounded via shortest possible path.

Use Value: Sub-0.15 pF loading prevents eye diagram closure and jitter accumulation at 10+ Gbps data rates.

DisplayPort 1.4a Link ProtectionPCIe 4.0 x1 Lane Protection

Use Scenario: Shielding DP++ source outputs in ultrabooks and docking stations from ESD during cable hot-plug operations.

IC Role / Device Role / Timing Role: Per-lane ESD suppressor mounted adjacent to connector, with matched trace length to minimize skew.

Use Value: 1.05 Ω dynamic resistance ensures clamp voltage stays below 25 V during 8 kV transients, protecting SerDes receivers.

Use Scenario: Hardening PCIe 4.0 x1 lanes in edge AI accelerators and NVMe SSD controllers against board-level ESD coupling.

IC Role / Device Role / Timing Role: Point-of-entry protection on each lane (CLK, REQ#, ACK#), referenced to local analog ground.

Use Value: ±8 kV IEC61000-4-2 rating and 25 V clamp at 2 A prevent bit errors and link training failures during field operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TPD2E001DRYR0.19 pF typical capacitance; 5.5 V VRWM; ±8 kV IEC61000-4-2; SOT-5X3 (1.0 mm × 0.6 mm)Larger footprint; higher capacitance limits use above 3 GHzSelect when SL2 assembly capability is unavailable and 2.4 GHz operation suffices.
ESD5Z3.3T5G3.3 V VRWM; 0.45 pF typical capacitance; ±12 kV IEC61000-4-2; SOD-523 (1.2 mm × 0.8 mm)Lower VRWM restricts to 3.3 V systems; higher capacitance degrades >1 GHz signal fidelityChoose only for cost-sensitive 3.3 V interfaces where RF performance is secondary.

Compared with TPD2E001DRYR and ESD5Z3.3T5G, the DF2B6M4BSL offers the lowest capacitance (0.12 pF) and smallest footprint (0.62 mm × 0.32 mm), making it uniquely suitable for 5.0 GHz antenna and 10+ Gbps serial interface protection where layout area and RF transparency are primary constraints.

Availability

DF2B6M4BSL is available at Aetrix Electronics and suitable for mobile equipment, IoT sensor nodes, and wearable RF subsystems requiring stable component supply and consistent ESD immunity performance across production batches.

Supply support for DF2B6M4BSL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for consumer, industrial, and communications markets, with emphasis on signal integrity, power efficiency, and miniaturization.

The DF2B6M4BSL belongs to Toshiba's ultra-low-capacitance ESD protection diode family, engineered specifically for RF front-end and high-speed digital interface protection in space-constrained portable electronics.

FAQ

What is the maximum operating frequency supported by DF2B6M4BSL without signal degradation?

The DF2B6M4BSL maintains signal integrity up to 5.0 GHz, validated by –65.5 dBm second-harmonic distortion at 2.4 GHz/20 dBm input and –64.7 dBm at 5.0 GHz/20 dBm. Its 0.12 pF capacitance ensures minimal insertion loss and reflection on antenna and high-speed serial traces, making DF2B6M4BSL appropriate for Wi-Fi 6E and UWB front-end protection.

Can DF2B6M4BSL be used on a 3.3 V logic line?

Yes, DF2B6M4BSL is compatible with 3.3 V systems: its 5.5 V VRWM provides ample margin above 3.3 V nominal rail, and reverse leakage remains ≤0.1 µA at VRWM. However, for dedicated 3.3 V applications with tighter voltage margins, lower-VRWM alternatives may offer better leakage control-DF2B6M4BSL remains valid where robustness and RF performance are prioritized over minimal leakage.

How is the DF2B6M4BSL pinout configured for differential signal protection?

DF2B6M4BSL has two identical, bidirectional terminals. For differential pairs (e.g., USB D+/D−), one DF2B6M4BSL is placed on each line with Pin 2 grounded; Pin 1 connects to the signal. This preserves symmetry and avoids common-mode imbalance. The SL2 package's small size minimizes loop area, reducing EMI coupling-critical for maintaining DF2B6M4BSL's effectiveness on high-speed differential interfaces.

Does DF2B6M4BSL meet automotive AEC-Q200 requirements?

No, DF2B6M4BSL is not qualified to AEC-Q200. It is rated for industrial temperature range (–55 °C to +150 °C) but lacks automotive-grade qualification, including extended reliability testing, zero-defect screening, and PPAP documentation. For automotive infotainment or ADAS antenna modules, engineers must select AEC-Q200-qualified alternatives; DF2B6M4BSL is intended for commercial mobile and IoT applications.

What is the recommended PCB layout practice for DF2B6M4BSL to maximize ESD protection efficacy?

Place DF2B6M4BSL within 3 mm of the protected connector or IC pad, route the protected signal directly to Pin 1, and connect Pin 2 to a solid ground plane using ≥2 vias (0.2 mm diameter). Avoid stubs or tees-keep the GND path shorter than the signal path. This layout minimizes inductance in the ESD current path, ensuring DF2B6M4BSL clamps within 1 ns and holds voltage below 25 V during IEC61000-4-2 events.

DF2B6M4BSL,L3F Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Package/Case:
2-SMD, No Lead
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
5.5V (Max)
Voltage - Breakdown (Min):
5.6V
Voltage - Clamping (Max) @ Ipp:
15V
Current - Peak Pulse (10/1000µs):
2A (8/20µs)
Power - Peak Pulse:
30W
Power Line Protection:
No
Applications:
HDMI, USB
Capacitance @ Frequency:
0.12pF @ 1MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SL2

DF2B6M4BSL,L3F FAQ

1.How can I place an order for DF2B6M4BSL,L3F through Aetrix?

Please submit a Request for Quotation (RFQ) for DF2B6M4BSL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DF2B6M4BSL,L3F reliable?

The price and inventory of DF2B6M4BSL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B6M4BSL,L3F is usually 5 days.

3.What payment methods are accepted for DF2B6M4BSL,L3F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B6M4BSL,L3F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DF2B6M4BSL,L3F?

DF2B6M4BSL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DF2B6M4BSL,L3F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DF2B6M4BSL,L3F?

For technical support, including DF2B6M4BSL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B6M4BSL,L3F requirements.

6.How does Aetrix verify that DF2B6M4BSL,L3F is sourced from the original manufacturer or authorized distributors?

All DF2B6M4BSL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B6M4BSL,L3F meets industry standards.

7.What is the process for return or replacement of DF2B6M4BSL,L3F?

All DF2B6M4BSL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B6M4BSL,L3F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DF2B6M4BSL,L3F part is unused and in its original packaging.

Return procedure for DF2B6M4BSL,L3F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DF2B6M4BSL,L3F Tags

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