Toshiba Semiconductor and Storage DF2B6M4BSL,L3F
- Part No.:
- DF2B6M4BSL,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 2-SMD, No Lead
- Datasheet:
-
DF2B6M4BSL,L3F.pdf
- Description:
- UNI-DIR ESD PR DI SOD-962 V(ESD)
- Quantity:
- Payment:

- Shipping:

Inventory:5,429
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DF2B6M4BSL from Toshiba Electronic Devices & Storage Corporation is an ultra-low-capacitance ESD protection diode designed for high-frequency signal lines in antennas and high-speed interfaces. It delivers 0.12 pF typical capacitance, 5.5 V working peak reverse voltage, 215 V clamp voltage at +8 kV contact discharge, and operates in a 0.62 mm × 0.32 mm SL2 package for mobile RF front-end and USB/HDMI protection.
For engineers reviewing the DF2B6M4BSL datasheet, DF2B6M4BSL pinout, DF2B6M4BSL application, or DF2B6M4BSL equivalent, key selection criteria include sub-0.15 pF capacitance, low dynamic resistance (1.05 Ω), IEC61000-4-2 ±8 kV contact/air robustness, and suitability for 2.4 GHz/5.0 GHz antenna and interface protection where signal integrity is critical.
Technical Context
The DF2B6M4BSL employs silicon epitaxial planar technology to achieve ultra-low junction capacitance and low harmonic distortion-measured at –65.5 dBm (2nd) and –54.4 dBm (3rd) under 2.4 GHz/20 dBm input. Its bidirectional clamping structure supports dual-pin I/O protection with ground-referenced configuration.
It meets IEC61000-4-2 (±8 kV contact/air) and IEC61000-4-5 (8/20 µs, 30 W peak power) standards. The device exhibits 1.05 Ω dynamic resistance derived from TLP testing between 8 A and 16 A, enabling fast transient response and stable clamping below 25 V at 2 A IPP.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 5.5 V - Ensures compatibility with 5.0 V signal rails without leakage or premature conduction. |
| Total Capacitance | 0.12 pF (typ), ≤0.15 pF (max) - Preserves signal integrity on 2.4 GHz/5.0 GHz antenna and high-speed serial links. |
| Dynamic Resistance | 1.05 Ω - Enables low-voltage clamping and minimal overshoot during fast ESD transients. |
| Clamp Voltage (VC) | 25 V @ 2 A IPP - Limits voltage stress on protected ICs during IEC61000-4-2 events. |
| ESD Withstand | ±8 kV contact / ±8 kV air per IEC61000-4-2 - Meets industrial and portable electronics immunity requirements. |
| Package Size | 0.62 mm × 0.32 mm (SL2) - Supports ultra-dense PCB layouts in smartphones and wearables. |
Pinout & Package
DF2B6M4BSL uses a 2-terminal SL2 package (0.62 mm × 0.32 mm, 0.2 mg typical weight), optimized for RF signal path integration. Pin 1 and Pin 2 are symmetrical bidirectional terminals; either may serve as I/O when the other is connected to GND.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | I/O Terminal (anode/cathode interchangeable) | Connected to protected signal line (e.g., antenna feed, USB D+, HDMI TMDS); requires external GND connection on Pin 2. |
| Pin 2 | GND Reference Terminal | Must be tied to system ground to complete ESD current path; no internal GND bias-external grounding is mandatory. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.12 pF typ ensures <1% insertion loss at 5.0 GHz, preserving RF gain and return loss in antenna matching networks. |
| Bidirectional ESD clamping | Supports symmetric transient suppression on AC-coupled lines without polarity constraints-ideal for differential interfaces like DisplayPort and PCIe. |
| Low harmonic distortion | –65.5 dBm 2nd harmonic @ 2.4 GHz/20 dBm enables clean signal transmission in Wi-Fi/BT front-ends without spectral regrowth. |
| SL2 footprint compatibility | 0.62 mm × 0.32 mm outline matches IPC-7351B LCC-2 land pattern, enabling drop-in replacement in space-constrained mobile designs. |
Applications
| Wi-Fi/Bluetooth Antenna Protection | USB 3.x / HDMI Interface Protection |
|---|---|
Use Scenario: Protecting 2.4 GHz/5.0 GHz antenna feedlines in smartphones and IoT gateways from human-body ESD events. IC Role / Device Role / Timing Role: Bidirectional TVS diode placed in series with RF trace, shunting ESD energy to GND before reaching PA/LNA. Use Value: 0.12 pF capacitance avoids detuning of antenna impedance matching, maintaining >75% radiation efficiency post-protection. | Use Scenario: Safeguarding high-speed differential pairs in USB 3.2 Gen 2 and HDMI 2.1 sources/sinks against contact discharge. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on each signal line (TX/RX, TMDS+/-), grounded via shortest possible path. Use Value: Sub-0.15 pF loading prevents eye diagram closure and jitter accumulation at 10+ Gbps data rates. |
| DisplayPort 1.4a Link Protection | PCIe 4.0 x1 Lane Protection |
Use Scenario: Shielding DP++ source outputs in ultrabooks and docking stations from ESD during cable hot-plug operations. IC Role / Device Role / Timing Role: Per-lane ESD suppressor mounted adjacent to connector, with matched trace length to minimize skew. Use Value: 1.05 Ω dynamic resistance ensures clamp voltage stays below 25 V during 8 kV transients, protecting SerDes receivers. | Use Scenario: Hardening PCIe 4.0 x1 lanes in edge AI accelerators and NVMe SSD controllers against board-level ESD coupling. IC Role / Device Role / Timing Role: Point-of-entry protection on each lane (CLK, REQ#, ACK#), referenced to local analog ground. Use Value: ±8 kV IEC61000-4-2 rating and 25 V clamp at 2 A prevent bit errors and link training failures during field operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.19 pF typical capacitance; 5.5 V VRWM; ±8 kV IEC61000-4-2; SOT-5X3 (1.0 mm × 0.6 mm) | Larger footprint; higher capacitance limits use above 3 GHz | Select when SL2 assembly capability is unavailable and 2.4 GHz operation suffices. |
| ESD5Z3.3T5G | 3.3 V VRWM; 0.45 pF typical capacitance; ±12 kV IEC61000-4-2; SOD-523 (1.2 mm × 0.8 mm) | Lower VRWM restricts to 3.3 V systems; higher capacitance degrades >1 GHz signal fidelity | Choose only for cost-sensitive 3.3 V interfaces where RF performance is secondary. |
Compared with TPD2E001DRYR and ESD5Z3.3T5G, the DF2B6M4BSL offers the lowest capacitance (0.12 pF) and smallest footprint (0.62 mm × 0.32 mm), making it uniquely suitable for 5.0 GHz antenna and 10+ Gbps serial interface protection where layout area and RF transparency are primary constraints.
Availability
DF2B6M4BSL is available at Aetrix Electronics and suitable for mobile equipment, IoT sensor nodes, and wearable RF subsystems requiring stable component supply and consistent ESD immunity performance across production batches.
Supply support for DF2B6M4BSL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for consumer, industrial, and communications markets, with emphasis on signal integrity, power efficiency, and miniaturization.
The DF2B6M4BSL belongs to Toshiba's ultra-low-capacitance ESD protection diode family, engineered specifically for RF front-end and high-speed digital interface protection in space-constrained portable electronics.
FAQ
What is the maximum operating frequency supported by DF2B6M4BSL without signal degradation?
The DF2B6M4BSL maintains signal integrity up to 5.0 GHz, validated by –65.5 dBm second-harmonic distortion at 2.4 GHz/20 dBm input and –64.7 dBm at 5.0 GHz/20 dBm. Its 0.12 pF capacitance ensures minimal insertion loss and reflection on antenna and high-speed serial traces, making DF2B6M4BSL appropriate for Wi-Fi 6E and UWB front-end protection.
Can DF2B6M4BSL be used on a 3.3 V logic line?
Yes, DF2B6M4BSL is compatible with 3.3 V systems: its 5.5 V VRWM provides ample margin above 3.3 V nominal rail, and reverse leakage remains ≤0.1 µA at VRWM. However, for dedicated 3.3 V applications with tighter voltage margins, lower-VRWM alternatives may offer better leakage control-DF2B6M4BSL remains valid where robustness and RF performance are prioritized over minimal leakage.
How is the DF2B6M4BSL pinout configured for differential signal protection?
DF2B6M4BSL has two identical, bidirectional terminals. For differential pairs (e.g., USB D+/D−), one DF2B6M4BSL is placed on each line with Pin 2 grounded; Pin 1 connects to the signal. This preserves symmetry and avoids common-mode imbalance. The SL2 package's small size minimizes loop area, reducing EMI coupling-critical for maintaining DF2B6M4BSL's effectiveness on high-speed differential interfaces.
Does DF2B6M4BSL meet automotive AEC-Q200 requirements?
No, DF2B6M4BSL is not qualified to AEC-Q200. It is rated for industrial temperature range (–55 °C to +150 °C) but lacks automotive-grade qualification, including extended reliability testing, zero-defect screening, and PPAP documentation. For automotive infotainment or ADAS antenna modules, engineers must select AEC-Q200-qualified alternatives; DF2B6M4BSL is intended for commercial mobile and IoT applications.
What is the recommended PCB layout practice for DF2B6M4BSL to maximize ESD protection efficacy?
Place DF2B6M4BSL within 3 mm of the protected connector or IC pad, route the protected signal directly to Pin 1, and connect Pin 2 to a solid ground plane using ≥2 vias (0.2 mm diameter). Avoid stubs or tees-keep the GND path shorter than the signal path. This layout minimizes inductance in the ESD current path, ensuring DF2B6M4BSL clamps within 1 ns and holds voltage below 25 V during IEC61000-4-2 events.
DF2B6M4BSL,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 2-SMD, No Lead
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 5.6V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- 30W
- Power Line Protection:
- No
- Applications:
- HDMI, USB
- Capacitance @ Frequency:
- 0.12pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SL2
DF2B6M4BSL,L3F FAQ
1.How can I place an order for DF2B6M4BSL,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B6M4BSL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B6M4BSL,L3F reliable?
The price and inventory of DF2B6M4BSL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B6M4BSL,L3F is usually 5 days.
3.What payment methods are accepted for DF2B6M4BSL,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B6M4BSL,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B6M4BSL,L3F?
DF2B6M4BSL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B6M4BSL,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B6M4BSL,L3F?
For technical support, including DF2B6M4BSL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B6M4BSL,L3F requirements.
6.How does Aetrix verify that DF2B6M4BSL,L3F is sourced from the original manufacturer or authorized distributors?
All DF2B6M4BSL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B6M4BSL,L3F meets industry standards.
7.What is the process for return or replacement of DF2B6M4BSL,L3F?
All DF2B6M4BSL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B6M4BSL,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B6M4BSL,L3F part is unused and in its original packaging.
Return procedure for DF2B6M4BSL,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B6M4BSL,L3F Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

