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Toshiba Semiconductor and Storage DF2B6M5CT,L3F
- Part No.:
- DF2B6M5CT,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- SOD-882
- Datasheet:
-
DF2B6M5CT,L3F.pdf
- Description:
- BIDIRECTIONAL ESD DIODE VRWM:+/-
- Quantity:
- Payment:
- Shipping:
Inventory:7,955
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Product details
Overview
DF2B6M5CT,L3F from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for high-speed signal lines in mobile interfaces, featuring 5.0 V working peak reverse voltage, ±20 kV IEC61000-4-2 contact/air ESD immunity, 0.3 pF typical capacitance, 0.5 Ω dynamic resistance, and ultra-compact CST2 (1.0 mm × 0.6 mm) package.
For engineers reviewing the DF2B6M5CT,L3F datasheet, DF2B6M5CT,L3F pinout, DF2B6M5CT,L3F application, or DF2B6M5CT,L3F equivalent, key selection criteria include low-capacitance signal integrity preservation, snapback-based clamping performance under fast transient events, and footprint compatibility with dense mobile PCB layouts.
Technical Context
The DF2B6M5CT,L3F employs a silicon epitaxial planar structure with snapback-triggered TVS behavior, enabling low clamping voltage (11 V @ 2.5 A) and rapid response to ESD transients. Its bidirectional configuration supports I/O line protection without polarity constraints.
Designed specifically for 5 V signal rails, it operates within a VRWM ≤ 5.0 V range and delivers sub-0.5 pF capacitance to minimize signal distortion on USB 2.0, HDMI, and MIPI D-PHY interfaces - verified via S21 measurements up to 3 GHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 5.0 V max - ensures safe operation on standard 5 V I/O buses without leakage or premature conduction. |
| Total Capacitance | 0.3 pF typ. @ 1 MHz - preserves signal integrity on high-speed digital interfaces (e.g., USB 2.0, MIPI). |
| Dynamic Resistance | 0.5 Ω typ. - enables low-voltage clamping during ESD events, reducing stress on protected ICs. |
| ESD Withstand Voltage | ±20 kV per IEC61000-4-2 (Contact/Air) - exceeds industrial and consumer ESD immunity requirements. |
| Clamp Voltage | 11 V typ. @ 2.5 A peak pulse - limits transient overvoltage to safe levels for downstream 5 V logic devices. |
| Package Size | 1.0 mm × 0.6 mm - fits tight pitch layouts in smartphones and wearables; CST2 footprint standardized for automated assembly. |
Pinout & Package
The DF2B6M5CT,L3F is housed in the CST2 surface-mount package (1.0 mm × 0.6 mm, 0.7 mg typical weight), optimized for high-density mobile PCBs. Pin 1 and Pin 2 form a bidirectional ESD protection path; grounding either pin enables protection of the opposing I/O line.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode/Cathode (bidirectional) | Connect to protected I/O line; ground Pin 2 for standard protection configuration. |
| Pin 2 | Anode/Cathode (bidirectional) | Ground reference terminal; when grounded, enables ESD current shunting from Pin 1 to GND. |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables 11 V clamping at 2.5 A while maintaining low dynamic resistance (0.5 Ω), improving protection margin over standard Zener TVS. |
| Ultra-low capacitance | 0.3 pF typical value minimizes insertion loss and signal rise-time degradation on >480 Mbps interfaces like USB 2.0. |
| Bidirectional I/O protection | Supports both positive and negative ESD transients without external polarity selection - simplifies layout and reduces BOM count. |
| Compact CST2 footprint | 1.0 mm × 0.6 mm land pattern aligns with IPC-7351B LCC-2 standards, enabling placement in <0.4 mm pitch routing zones. |
Applications
| USB 2.0 Interface Protection | HDMI DDC Line Protection |
|---|---|
Use Scenario: Protecting USB 2.0 data lines (D+/D−) in smartphone charging ports against repeated ESD events during cable insertion/removal. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector entry point, before PHY IC. Use Value: 0.3 pF capacitance prevents signal integrity loss at 480 Mbps; ±20 kV ESD rating ensures >10,000 connect/disconnect cycles without degradation. |
Use Scenario: Safeguarding HDMI DDC (I²C) lines in tablet display modules from ESD during hot-plug detection and EDID communication. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on 3.3 V DDC bus, positioned between source SoC and display panel EEPROM. Use Value: 5.0 V VRWM matches I²C logic level; 11 V clamping prevents latch-up in display controller I/O cells during ±8 kV contact discharge. |
| MIPI D-PHY Data Lane Protection | Smartphone Antenna Switch Control Line Protection |
Use Scenario: Shielding MIPI D-PHY high-speed data lanes (CLK/HS-DATA) in camera modules from ESD induced by flex-cable handling during assembly. IC Role / Device Role / Timing Role: Ultra-low-capacitance TVS diode mounted adjacent to image sensor interface, minimizing stub length. Use Value: Sub-0.45 pF max capacitance avoids jitter accumulation and eye-diagram closure at 1.5 Gbps; snapback behavior ensures fast turn-on below 6.7 V trigger threshold. |
Use Scenario: Protecting GPIO-controlled antenna switch enable lines in LTE/5G front-end modules exposed to handling ESD during board-level test and final assembly. IC Role / Device Role / Timing Role: ESD clamp on 1.8 V or 2.8 V control rail driving GaAs pHEMT antenna switches. Use Value: 0.5 Ω dynamic resistance limits voltage overshoot to <12 V during 2.5 A TLP pulses, preventing gate oxide damage in RF switches. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF typical capacitance; unidirectional; 5.5 V VRWM; SO-2 package (1.25 mm × 1.0 mm). | Higher capacitance limits use to lower-speed interfaces (e.g., I²C, UART); larger footprint requires more board area. | Select when cost sensitivity outweighs high-speed signal integrity needs and board space permits larger package. |
| ESD5Z5.0T1G | 0.6 pF typical capacitance; bidirectional; 5.0 V VRWM; SOD-523 package (1.3 mm × 0.85 mm). | 19% larger footprint than CST2; higher dynamic resistance (0.8 Ω) yields ~13.5 V clamping at 2.5 A. | Choose where existing SOD-523 land patterns exist and moderate ESD robustness suffices for mid-tier consumer designs. |
Compared with TPD2E001DRYR and ESD5Z5.0T1G, the DF2B6M5CT,L3F delivers superior high-speed interface compatibility due to its 0.3 pF capacitance and CST2 footprint, while maintaining best-in-class 11 V clamping and ±20 kV ESD rating - critical for flagship smartphone and premium tablet designs.
Availability
DF2B6M5CT,L3F is available at Aetrix Electronics and suitable for smartphone interface protection, tablet display module safeguarding, and notebook PC USB port hardening requiring stable component supply across high-volume production cycles.
Supply support for DF2B6M5CT,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for consumer, industrial, and automotive applications, with emphasis on power efficiency, miniaturization, and system-level protection.
The DF2B6M5CT,L3F belongs to Toshiba's CST2-series ESD protection portfolio, engineered specifically for ultra-compact, high-speed signal line protection in next-generation mobile and portable electronics.
FAQ
What is the maximum working voltage supported by the DF2B6M5CT,L3F?
The DF2B6M5CT,L3F has a working peak reverse voltage (VRWM) of 5.0 V maximum, making it suitable for protection of 5 V signal lines such as USB 2.0, HDMI DDC, and legacy parallel interfaces. Operation above this voltage risks premature conduction and increased leakage current, so the DF2B6M5CT,L3F must be applied only in circuits where steady-state reverse bias remains ≤5.0 V.
Does the DF2B6M5CT,L3F require external biasing or control signals?
No, the DF2B6M5CT,L3F is a passive bidirectional TVS diode with no control pins, power supply, or biasing requirements. It operates solely based on voltage threshold behavior - conducting only during ESD transients exceeding its snapback trigger voltage (~6.7 V). The DF2B6M5CT,L3F functions autonomously when placed between signal line and ground.
How does the DF2B6M5CT,L3F compare to standard Zener-type ESD diodes in clamping performance?
The DF2B6M5CT,L3F uses snapback architecture to achieve 11 V clamping at 2.5 A, significantly lower than typical Zener-based TVS diodes (often >15 V at same current). Its 0.5 Ω dynamic resistance enables faster voltage stabilization during transients. This behavior is confirmed in the DF2B6M5CT,L3F's TLP characterization curves and directly improves protection margin for sensitive 5 V logic inputs.
Can the DF2B6M5CT,L3F be used on differential high-speed pairs without skew impact?
Yes - the DF2B6M5CT,L3F's matched 0.3 pF capacitance and symmetric bidirectional structure ensure minimal inter-pair skew when placed identically on both lines of a differential pair (e.g., USB D+/D−). Layout symmetry and equal trace lengths are required, but the DF2B6M5CT,L3F itself introduces no inherent timing asymmetry due to its monolithic dual-terminal construction.
Is the DF2B6M5CT,L3F compliant with RoHS and REACH regulations?
Yes, the DF2B6M5CT,L3F is RoHS-compliant and meets REACH SVHC requirements as confirmed by Toshiba's official environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, PBDE, or restricted phthalates above threshold limits, and is rated for lead-free reflow soldering per J-STD-020.
DF2B6M5CT,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- SOD-882
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 5.5V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 2.5A (8/20µs)
- Power - Peak Pulse:
- 37W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.3pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST2
DF2B6M5CT,L3F FAQ
1.How can I place an order for DF2B6M5CT,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B6M5CT,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B6M5CT,L3F reliable?
The price and inventory of DF2B6M5CT,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B6M5CT,L3F is usually 5 days.
3.What payment methods are accepted for DF2B6M5CT,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B6M5CT,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B6M5CT,L3F?
DF2B6M5CT,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B6M5CT,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B6M5CT,L3F?
For technical support, including DF2B6M5CT,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B6M5CT,L3F requirements.
6.How does Aetrix verify that DF2B6M5CT,L3F is sourced from the original manufacturer or authorized distributors?
All DF2B6M5CT,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B6M5CT,L3F meets industry standards.
7.What is the process for return or replacement of DF2B6M5CT,L3F?
All DF2B6M5CT,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B6M5CT,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B6M5CT,L3F part is unused and in its original packaging.
Return procedure for DF2B6M5CT,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B6M5CT,L3F Tags
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