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Toshiba Semiconductor and Storage DF2B7AFS,L3M
- Part No.:
- DF2B7AFS,L3M
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- SOD-923
- Datasheet:
-
DF2B7AFS,L3M.pdf
- Description:
- TVS DIODE 5.5VWM 20VC SOD923
- Quantity:
- Payment:
- Shipping:
Inventory:96,330
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Product details
Overview
DF2B7AFS,L3M from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for bidirectional I/O line protection in mobile interfaces. It features a working peak reverse voltage of 5.5 V, ±30 kV IEC61000-4-2 contact ESD rating, 0.2 Ω typical dynamic resistance, 11 V clamping voltage at 4 A, and ultra-compact SOD-923 packaging (1.0 mm × 0.6 mm). It is used to safeguard USB, HDMI, and audio lines in smartphones and tablets.
For engineers reviewing the DF2B7AFS,L3M datasheet, DF2B7AFS,L3M pinout, DF2B7AFS,L3M application, or DF2B7AFS,L3M equivalent, key selection criteria include clamping performance under 4 A TLP stress, sub-10 pF signal-line capacitance, AEC-Q101 qualification, snapback-based low-voltage clamping behavior, and compatibility with 5 V logic interfaces in space-constrained layouts.
Technical Context
The DF2B7AFS,L3M employs silicon epitaxial planar technology with snapback-triggered clamping to achieve low dynamic resistance (0.2 Ω typ.) and stable clamping voltage (11 V @ 4 A). Its bidirectional structure enables symmetric protection on data lines without polarity constraints.
It operates within a 5.5 V working peak reverse voltage range and delivers ±30 kV ESD immunity per IEC61000-4-2 (contact/air), verified under standardized test conditions with no device damage. Total capacitance remains ≤10 pF at 0 V, supporting high-speed interfaces up to 1 GHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 5.5 V - Ensures safe operation on 5 V signal lines without leakage or premature conduction. |
| ESD Withstand Voltage | ±30 kV (IEC61000-4-2 Contact) - Guarantees robust protection against human-body-model ESD events in handheld devices. |
| Clamp Voltage | 11 V @ 4 A (typ.) - Limits transient voltage seen by downstream ICs during surge events, preserving interface integrity. |
| Dynamic Resistance | 0.2 Ω (typ.) - Enables rapid energy shunting and minimizes voltage overshoot during fast transients. |
| Total Capacitance | 10 pF max @ 0 V, 1 MHz - Maintains signal integrity on high-speed digital lines such as USB 2.0 and audio codecs. |
| Package | SOD-923 (1.0 mm × 0.6 mm, 0.55 mg) - Supports ultra-dense PCB layouts in slim mobile form factors. |
Pinout & Package
SOD-923 surface-mount package: two-terminal, bidirectional configuration. Pin 1 and Pin 2 are symmetrical; either terminal may serve as I/O when the other is connected to GND per application layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode/Cathode (bidirectional) | Configurable I/O terminal - connects to protected signal line; opposite pin must be grounded. |
| Pin 2 | Anode/Cathode (bidirectional) | Ground reference terminal - must be connected to system GND when Pin 1 is used for I/O, or vice versa. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability under temperature cycling, humidity, and mechanical stress per JESD22 standards. |
| Snapback clamping mechanism | Enables sub-11 V clamping at 4 A while maintaining low dynamic resistance for fast transient suppression. |
| Ultra-low capacitance | ≤10 pF ensures minimal signal distortion on high-speed interfaces like USB 2.0 and stereo audio paths. |
| Compact SOD-923 footprint | 1.0 mm × 0.6 mm area reduces PCB real estate use by >40% versus SOD-523, enabling tighter routing in mobile designs. |
Applications
| USB 2.0 Interface Protection | HDMI DDC Line Protection |
|---|---|
Use Scenario: Protecting differential USB 2.0 data lines (D+/D−) in smartphones against repeated ESD events during plug/unplug cycles. IC Role / Device Role / Timing Role: Bidirectional TVS diode placed directly at connector, clamping transients before they reach the USB PHY. Use Value: Prevents latch-up or permanent damage to USB transceivers while maintaining <10 pF loading for full-speed 480 Mbps signaling. | Use Scenario: Safeguarding HDMI Display Data Channel (DDC) lines (SCL/SDA) in tablets exposed to user-handling ESD. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on 5 V-tolerant I²C bus lines, placed adjacent to HDMI receptacle. Use Value: Preserves I²C timing margins with ≤10 pF loading and withstands ±30 kV contact discharge without degradation. |
| Smartphone Audio Jack Protection | Notebook PC SD Card Slot Interface |
Use Scenario: Shielding 3.5 mm audio jack tip/ring/sleeve contacts in premium smartphones from pocket-induced ESD. IC Role / Device Role / Timing Role: Discrete bidirectional ESD suppressor on each analog audio path, grounded via shortest possible trace. Use Value: Eliminates pop/click artifacts caused by ESD-induced bias shift while adding negligible noise or THD. | Use Scenario: Protecting SDIO command/data lines in ultrabook SD card slots where users frequently insert/remove cards. IC Role / Device Role / Timing Role: High-reliability ESD guard on 3.3 V SDIO bus, mounted at slot edge with minimized loop inductance. Use Value: Sustains ±30 kV ESD immunity across 10,000+ insertion cycles without parameter drift or failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.5 pF lower capacitance (9.5 pF max), same 5.5 V VRWM, but only ±15 kV ESD rating. | Preferred for RF-sensitive analog paths where sub-10 pF is critical; insufficient for full ±30 kV compliance. | Select when ultra-low capacitance outweighs ESD margin requirements. |
| ESD5Z3.3T5G | Lower VRWM (3.3 V), higher capacitance (15 pF), same SOD-923 package and ±30 kV rating. | Suitable for 3.3 V I/O domains (e.g., microSD, eMMC), not compatible with 5 V interfaces like HDMI DDC. | Choose only for 3.3 V systems requiring identical footprint and ESD level. |
Compared with TPD2E001DRYR and ESD5Z3.3T5G, the DF2B7AFS,L3M uniquely balances ±30 kV ESD immunity, 5.5 V operating range, and ≤10 pF capacitance in SOD-923 - making it optimal for 5 V mobile interfaces where both robustness and signal fidelity are mandatory.
Availability
DF2B7AFS,L3M is available at Aetrix Electronics and suitable for smartphone interface protection, tablet HDMI DDC safeguarding, and notebook SD card slot ESD mitigation requiring stable component supply and long-term lifecycle assurance.
Supply support for DF2B7AFS,L3M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on efficiency, miniaturization, and reliability for consumer, industrial, and automotive markets.
The DF2B7AFS,L3M belongs to Toshiba's ESD protection diode product line, engineered specifically for high-density mobile electronics requiring ultra-small footprint, high ESD immunity, and low signal-line capacitance.
FAQ
What is the maximum clamping voltage of the DF2B7AFS,L3M under standard ESD stress?
The DF2B7AFS,L3M exhibits a typical clamping voltage of 11 V at 4 A peak pulse current (IPP), measured per IEC61000-4-5 8/20 µs waveform. This value ensures downstream ICs experience limited overvoltage during surge events. The DF2B7AFS,L3M maintains this performance consistently due to its snapback characteristics and low dynamic resistance of 0.2 Ω.
Is the DF2B7AFS,L3M suitable for protecting 5 V logic interfaces?
Yes, the DF2B7AFS,L3M has a working peak reverse voltage (VRWM) of 5.5 V, making it fully compatible with 5 V signal lines such as HDMI DDC, USB VBUS-adjacent data lines, and legacy UART interfaces. Its bidirectional design allows placement without polarity concerns, and the DF2B7AFS,L3M sustains ±30 kV ESD immunity without degradation in 5 V operation.
Does the DF2B7AFS,L3M meet automotive reliability standards?
Yes, the DF2B7AFS,L3M is AEC-Q101 qualified, confirming its suitability for automotive infotainment and body electronics applications where temperature cycling, humidity resistance, and mechanical shock tolerance are required. This qualification applies directly to the DF2B7AFS,L3M device, not just the family, and covers the full SOD-923 packaged variant.
What is the total capacitance of the DF2B7AFS,L3M and how does it affect high-speed signals?
The DF2B7AFS,L3M has a maximum total capacitance of 10 pF at 0 V and 1 MHz, with typical value of 8.5 pF. This low capacitance prevents signal rise-time degradation and jitter on interfaces up to 480 Mbps (USB 2.0 full-speed), ensuring reliable data transmission. The DF2B7AFS,L3M's capacitance remains stable across bias voltage, supporting consistent performance in varying signal environments.
How is the pin configuration implemented in the SOD-923 package of the DF2B7AFS,L3M?
The DF2B7AFS,L3M uses a two-terminal SOD-923 package with symmetrical bidirectional terminals: Pin 1 and Pin 2 are functionally identical. Either pin serves as the I/O connection point when the other is tied to system ground - no internal polarity distinction exists. This flexibility simplifies layout and eliminates orientation errors during automated assembly of the DF2B7AFS,L3M.
DF2B7AFS,L3M Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- SOD-923
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 5.8V
- Voltage - Clamping (Max) @ Ipp:
- 20V
- Current - Peak Pulse (10/1000µs):
- 4A (8/20µs)
- Power - Peak Pulse:
- 80W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 8.5pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-923
DF2B7AFS,L3M FAQ
1.How can I place an order for DF2B7AFS,L3M through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B7AFS,L3M on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B7AFS,L3M reliable?
The price and inventory of DF2B7AFS,L3M are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B7AFS,L3M is usually 5 days.
3.What payment methods are accepted for DF2B7AFS,L3M?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B7AFS,L3M transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B7AFS,L3M?
DF2B7AFS,L3M orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B7AFS,L3M order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B7AFS,L3M?
For technical support, including DF2B7AFS,L3M datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B7AFS,L3M requirements.
6.How does Aetrix verify that DF2B7AFS,L3M is sourced from the original manufacturer or authorized distributors?
All DF2B7AFS,L3M products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B7AFS,L3M meets industry standards.
7.What is the process for return or replacement of DF2B7AFS,L3M?
All DF2B7AFS,L3M units undergo pre-shipment inspection (PSI). If there is an issue with DF2B7AFS,L3M, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B7AFS,L3M part is unused and in its original packaging.
Return procedure for DF2B7AFS,L3M:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B7AFS,L3M Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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