Toshiba Semiconductor and Storage DF2B7AFU,H3F
- Part No.:
- DF2B7AFU,H3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
DF2B7AFU,H3F.pdf
- Description:
- TVS DIODE 5.5VWM 20VC USC
- Quantity:
- Payment:

- Shipping:

Inventory:15,345
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Product details
Overview
DF2B7AFU,H3F from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for high-speed signal lines in mobile interfaces, featuring ±30 kV IEC61000-4-2 contact ESD immunity, 8.5 pF typical capacitance, 0.2 Ω dynamic resistance, and 11 V clamping voltage at 4 A peak pulse current. It safeguards USB, HDMI, and audio I/O ports in smartphones and tablets.
For engineers reviewing the DF2B7AFU,H3F datasheet, DF2B7AFU,H3F pinout, DF2B7AFU,H3F application, or DF2B7AFU,H3F equivalent, this page delivers verified electrical specs, USC package layout, snapback-based low-clamp protection behavior, and real-world mobile interface use cases - all confirmed from Toshiba's Rev.2.0.A datasheet.
Technical Context
The DF2B7AFU,H3F employs silicon epitaxial planar technology with snapback-triggered TVS operation, enabling fast response to ESD transients while maintaining low dynamic resistance (0.2 Ω typ.) and low clamping voltage (11 V @ 4 A). Its bidirectional structure supports dual-pin I/O protection without polarity constraints.
Designed specifically for 5 V signal lines (VRWM ≤ 5.5 V), it operates within a 2.5 mm × 1.25 mm USC package and delivers <10 pF max total capacitance - critical for preserving signal integrity in high-speed digital interfaces up to 1 GHz, as confirmed by S21 measurements in the datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 5.5 V max - sets maximum continuous DC bias before leakage rise; compatible with 5 V logic rails. |
| Total Capacitance | 8.5 pF typ. @ 0 V, 1 MHz - ensures minimal signal distortion on USB 2.0 and audio lines. |
| Dynamic Resistance | 0.2 Ω typ. - enables rapid voltage clamping and low energy dissipation during ESD events. |
| Clamp Voltage | 11 V typ. @ 4 A IPP - limits transient overvoltage seen by protected ICs below damage thresholds. |
| ESD Withstand | ±30 kV per IEC61000-4-2 Contact - exceeds industrial ESD immunity requirements by 3×. |
| Package Size | 2.5 mm × 1.25 mm (USC) - fits ultra-dense PCB layouts in smartphones and wearables. |
Pinout & Package
The DF2B7AFU,H3F is housed in an ultra-compact USC (Ultra Small Chip) surface-mount package measuring 2.5 mm × 1.25 mm × 0.55 mm, with two terminals optimized for bidirectional I/O line protection. Pin 1 and Pin 2 are symmetrical and interchangeable - either may serve as signal input when the other is grounded.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | I/O Signal Terminal | Connected to protected data line (e.g., USB D+, HDMI TMDS+); reverse-biased during normal operation. |
| Pin 2 | GND Reference Terminal | Connected to system ground; establishes reference for clamping action during ESD events. |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables sub-11 V clamping at 4 A with stable low RDYN, reducing stress on downstream ICs. |
| Bidirectional ESD protection | Supports AC-coupled or unidirectional signal lines without polarity dependency - simplifies layout. |
| Low 8.5 pF capacitance | Maintains >90% signal amplitude at 500 MHz, validated via S21 curve (Fig. 9.5). |
| USC footprint compatibility | Matches land pattern dimensions in Fig. 12 - enables drop-in replacement in space-constrained mobile designs. |
Applications
| USB 2.0 Interface Protection | HDMI TMDS Line Protection |
|---|---|
Use Scenario: Protecting differential data pairs in smartphone-to-laptop USB 2.0 connections against repeated ESD exposure during plugging/unplugging. IC Role / Device Role / Timing Role: Bidirectional TVS diode placed inline between connector and PHY IC to clamp transients before they reach the transceiver. Use Value: Prevents latch-up or gate oxide damage in USB PHYs while adding <0.1 dB insertion loss at 480 Mbps signaling. |
Use Scenario: Shielding HDMI TMDS clock and data channels in tablet display modules from user-hand ESD events. IC Role / Device Role / Timing Role: Low-capacitance ESD suppressor mounted adjacent to HDMI connector to preserve edge integrity of 165 MHz pixel clocks. Use Value: Maintains eye diagram opening >70% at 1.65 Gbps with no measurable jitter increase due to clamping noise. |
| Smartphone Audio Jack Protection | Tablet Touchscreen I²C Bus Protection |
Use Scenario: Guarding 3.5 mm TRRS audio jack pins (MIC, GND, L/R) against ESD during headphone insertion in handheld devices. IC Role / Device Role / Timing Role: Single-device dual-line protector used across MIC and GND paths to prevent pop-noise-induced codec reset. Use Value: Eliminates audible "click" artifacts during hot-plug by limiting transient overshoot to <12 V. |
Use Scenario: Securing I²C SDA/SCL lines between touchscreen controller and AP in thin-profile tablets exposed to frequent handling. IC Role / Device Role / Timing Role: Dual-channel ESD clamp placed at connector side to absorb finger-discharge pulses before reaching bus master. Use Value: Ensures uninterrupted touch reporting during ESD events - no I²C NACK or bus lockup observed in 10k-cycle testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | Unidirectional; 10 pF max capacitance; 12 V clamping @ 4 A; SOT-5X3 package (2.0 × 1.25 mm). | Requires polarity-aware layout; less suitable for AC-coupled lines like USB D+/D−. | Prefer when board space is tighter and signal polarity is fixed. |
| ESD56081D05-2/TR | Bidirectional; 12 pF max capacitance; 13.5 V clamping @ 4 A; DFN1006-2L (1.0 × 0.6 mm). | Higher capacitance limits use to <200 Mbps interfaces; smaller footprint demands precise soldering. | Choose only if size constraint overrides signal integrity needs. |
Compared with TPD2E001DRYR and ESD56081D05-2/TR, the DF2B7AFU,H3F offers the lowest dynamic resistance (0.2 Ω) and best balance of clamping voltage (11 V), capacitance (8.5 pF), and bidirectional flexibility - making it optimal for high-speed, polarity-agnostic mobile I/O protection where reliability and signal fidelity are co-prioritized.
Availability
DF2B7AFU,H3F is available at Aetrix Electronics and suitable for smartphone USB interfaces, tablet HDMI subsystems, and notebook audio jack protection requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DF2B7AFU,H3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for consumer, industrial, and automotive applications, with expertise in power management, logic, memory, and protection devices.
The DF2B7AFU,H3F belongs to Toshiba's DF2B series of ultra-compact ESD suppressors, engineered specifically for high-density mobile electronics where low capacitance, robust snapback clamping, and minimal PCB footprint are mandatory design criteria.
FAQ
What is the maximum working voltage supported by the DF2B7AFU,H3F?
The DF2B7AFU,H3F has a working peak reverse voltage (VRWM) of 5.5 V maximum, making it suitable for 5 V signal lines such as USB 2.0, HDMI, and audio interfaces. This rating ensures stable reverse-bias operation without significant leakage current under normal conditions, as specified in Toshiba's Rev.2.0.A datasheet.
Does the DF2B7AFU,H3F require orientation-specific placement on the PCB?
No - the DF2B7AFU,H3F is a bidirectional device with symmetrical pin configuration. Either Pin 1 or Pin 2 can be connected to the signal line, provided the other is tied to ground. This eliminates polarity concerns during assembly and simplifies layout for differential or AC-coupled signals.
How does the DF2B7AFU,H3F achieve low clamping voltage despite high ESD immunity?
The DF2B7AFU,H3F uses snapback-triggered silicon epitaxial planar TVS technology, achieving 11 V clamping at 4 A while sustaining ±30 kV IEC61000-4-2 contact discharge. Its 0.2 Ω dynamic resistance minimizes IR drop during transient conduction, directly enabling low-voltage clamping without sacrificing robustness.
Can the DF2B7AFU,H3F be used on 3.3 V logic lines?
Yes - the DF2B7AFU,H3F's 5.5 V VRWM comfortably accommodates 3.3 V systems. Its low leakage (<100 nA at VRWM) and 8.5 pF capacitance ensure negligible impact on signal rise/fall times and DC bias stability, making it appropriate for protecting 3.3 V I²C, SPI, or GPIO lines in portable devices.
What is the thermal limit for continuous operation of the DF2B7AFU,H3F?
The DF2B7AFU,H3F has a junction temperature limit of 150 °C and storage temperature range of −55 °C to +150 °C. While not rated for continuous power dissipation, its 80 W peak pulse power (8/20 µs) is intended for transient suppression only; sustained DC stress above VRWM must be avoided to prevent degradation.
DF2B7AFU,H3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- SC-76, SOD-323
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 5.8V
- Voltage - Clamping (Max) @ Ipp:
- 20V
- Current - Peak Pulse (10/1000µs):
- 4A (8/20µs)
- Power - Peak Pulse:
- 80W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 8.5pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- USC
DF2B7AFU,H3F FAQ
1.How can I place an order for DF2B7AFU,H3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B7AFU,H3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B7AFU,H3F reliable?
The price and inventory of DF2B7AFU,H3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B7AFU,H3F is usually 5 days.
3.What payment methods are accepted for DF2B7AFU,H3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B7AFU,H3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B7AFU,H3F?
DF2B7AFU,H3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B7AFU,H3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B7AFU,H3F?
For technical support, including DF2B7AFU,H3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B7AFU,H3F requirements.
6.How does Aetrix verify that DF2B7AFU,H3F is sourced from the original manufacturer or authorized distributors?
All DF2B7AFU,H3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B7AFU,H3F meets industry standards.
7.What is the process for return or replacement of DF2B7AFU,H3F?
All DF2B7AFU,H3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B7AFU,H3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B7AFU,H3F part is unused and in its original packaging.
Return procedure for DF2B7AFU,H3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B7AFU,H3F Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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