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Toshiba Semiconductor and Storage DF2B7ASL,L3F
- Part No.:
- DF2B7ASL,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
DF2B7ASL,L3F.pdf
- Description:
- TVS DIODE 5.5VWM 20VC SL2
- Quantity:
- Payment:
- Shipping:
Inventory:33,943
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Product details
Overview
DF2B7ASL,L3F from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for I/O line protection in mobile device interfaces, featuring ±30 kV IEC61000-4-2 contact ESD immunity, 5.5 V working peak reverse voltage, and ultra-low 0.2 Ω dynamic resistance to suppress transient noise on 5 V signal paths.
For engineers reviewing the DF2B7ASL,L3F datasheet, DF2B7ASL,L3F pinout, DF2B7ASL,L3F application, or DF2B7ASL,L3F equivalent, this page delivers verified electrical parameters, SL2 package layout guidance, snapback-based clamping behavior, and real-world use cases in high-density portable electronics.
Technical Context
The DF2B7ASL,L3F employs silicon epitaxial planar technology with snapback-triggered TVS operation, enabling low clamping voltage (11 V @ 4 A) and fast response to ESD transients. Its bidirectional configuration supports dual-pin I/O protection without polarity constraints.
Designed specifically for 5 V signal lines, it maintains ≤10 pF total capacitance and operates within a −55 °C to +150 °C junction temperature range. The device is not rated for voltage regulation or sustained overvoltage conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 5.5 V - defines maximum continuous DC or AC signal swing before leakage increases significantly on protected lines. |
| ESD Withstand Voltage | ±30 kV (IEC61000-4-2 Contact) - certifies robustness against human-body-model ESD events in handheld device interfaces. |
| Dynamic Resistance | 0.2 Ω (typ.) - ensures minimal voltage overshoot during fast transients by limiting IR drop across the protection path. |
| Clamp Voltage | 11 V @ 4 A (typ.) - guarantees downstream ICs see no more than 11 V during 8/20 µs surge events, preserving 5 V logic integrity. |
| Total Capacitance | 8.5 pF (typ.) - enables use on high-speed interfaces (e.g., USB 2.0, MIPI D-PHY) without signal integrity degradation. |
| Package Size | 0.62 mm × 0.32 mm - fits tight pitch layouts in smartphones and tablets where board space is constrained. |
Pinout & Package
DF2B7ASL,L3F is housed in the SL2 ultra-compact surface-mount package (0.62 mm × 0.32 mm, 0.2 mg typical weight), optimized for automated placement in high-density mobile PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | I/O Line Terminal | Connected to protected signal line (e.g., USB D+, HDMI HPD); must be paired with Pin 2 tied to GND for proper snapback operation. |
| Pin 2 | GND Reference Terminal | Provides low-inductance return path to system ground; required for clamping action-no internal GND connection exists. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional Snapback Protection | Enables symmetric clamping for both positive and negative ESD transients without external polarity selection. |
| Low Dynamic Resistance (0.2 Ω) | Reduces voltage overshoot during fast-rising ESD pulses, improving protection margin for sensitive 5 V interface ICs. |
| Ultra-Low Capacitance (8.5 pF) | Preserves signal edge rate and eye diagram integrity on high-speed data lines up to 480 Mbps (USB 2.0). |
| SL2 Package Footprint | Minimizes PCB area usage and parasitic inductance-critical for maintaining ESD performance in compact mobile designs. |
Applications
| Smartphone USB Interface | Tablet Touchscreen Controller |
|---|---|
Use Scenario: Protects USB 2.0 D+ and D− lines from user-handling ESD during cable insertion/removal. IC Role / Device Role / Timing Role: Bidirectional TVS diode placed directly at connector, clamping transients before they reach the USB transceiver. Use Value: Prevents latch-up or permanent damage to the USB PHY while maintaining <10 pF loading for full-speed signaling compliance. |
Use Scenario: Shields I²C or SPI lines between AP and capacitive touchscreen controller from ESD induced by finger contact. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on SDA/SCL lines, positioned adjacent to the controller IC. Use Value: Ensures uninterrupted touch reporting under ±30 kV contact discharge without degrading I²C rise/fall times. |
| Notebook PC Audio Jack | Mobile Display Serial Interface |
Use Scenario: Guards 3.5 mm audio jack TRRS lines (MIC, GND, L/R) against ESD from headphone plugging/unplugging. IC Role / Device Role / Timing Role: Dual-channel protection device used per signal line, leveraging SL2's small size for multi-line coverage. Use Value: Eliminates pop/click artifacts and prevents codec IC damage while adding <0.4 mm² footprint per channel. |
Use Scenario: Protects MIPI D-PHY data lanes (CLKP/CLKN, DATAP/DATAN) in OLED display modules from assembly- and field-induced ESD. IC Role / Device Role / Timing Role: High-frequency ESD suppressor placed at display flex connector, minimizing stub length. Use Value: Maintains signal integrity at 1.5 Gbps with sub-9 pF loading and clamps transients below 12 V to avoid receiver saturation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR (Texas Instruments) | Unidirectional, 5.5 V VRWM, 12 pF Ct, ±8 kV IEC61000-4-2 contact rating. | Limited to single-polarity signal lines; lower ESD rating reduces margin in high-risk consumer environments. | Choose when unidirectional protection suffices and higher capacitance is acceptable for lower-speed interfaces. |
| ESD5Z5.0T1G (ON Semiconductor) | Bidirectional, 5.0 V VRWM, 14 pF Ct, ±22 kV IEC61000-4-2 contact rating. | Higher capacitance may impair >100 Mbps signals; lower ESD rating requires additional system-level mitigation. | Select where cost sensitivity outweighs need for top-tier ESD immunity and ultra-low capacitance. |
Compared with TPD2E001DRYR and ESD5Z5.0T1G, the DF2B7ASL,L3F delivers superior ESD robustness (±30 kV), lower dynamic resistance (0.2 Ω), and tighter capacitance control (8.5 pF), making it optimal for space-constrained, high-reliability mobile I/O protection where signal fidelity and transient suppression are co-critical.
Availability
DF2B7ASL,L3F is available at Aetrix Electronics and suitable for smartphone USB interfaces, tablet touchscreen controllers, and notebook PC audio jacks requiring stable component supply, consistent SL2 package sourcing, and guaranteed ESD performance compliance.
Supply support for DF2B7ASL,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for consumer, industrial, and automotive applications, with emphasis on power efficiency, miniaturization, and system-level protection.
The DF2B7ASL,L3F belongs to Toshiba's SL2-series ESD protection portfolio, engineered specifically for ultra-compact, high-performance I/O line protection in next-generation mobile devices.
FAQ
What is the primary circuit role of the DF2B7ASL,L3F in a mobile device design?
The DF2B7ASL,L3F serves as a bidirectional ESD protection diode placed directly at I/O connectors or IC pins to clamp transient voltages from electrostatic discharge. Its snapback behavior and low dynamic resistance ensure that the DF2B7ASL,L3F limits voltage seen by downstream 5 V logic ICs to ≤11 V during 4 A surges, preventing damage without interfering with normal signal operation.
Does the DF2B7ASL,L3F support both contact and air-gap ESD testing per IEC61000-4-2?
Yes, the DF2B7ASL,L3F is rated for ±30 kV under IEC61000-4-2 contact discharge and ±30 kV under air-gap discharge. This dual certification confirms its suitability for end-user handling scenarios in smartphones and tablets where both discharge modes occur during daily use and manufacturing handling.
Can the DF2B7ASL,L3F be used on high-speed interfaces like USB 2.0 or MIPI D-PHY?
Yes-the DF2B7ASL,L3F's typical 8.5 pF capacitance and low 0.2 Ω dynamic resistance make it compatible with USB 2.0 (480 Mbps) and MIPI D-PHY (up to 1.5 Gbps) interfaces. Its SL2 package minimizes parasitic inductance, preserving signal integrity while delivering robust ±30 kV ESD protection at the point of entry.
What is the correct PCB layout practice for the DF2B7ASL,L3F to ensure optimal ESD performance?
To maximize ESD effectiveness, place the DF2B7ASL,L3F as close as possible to the protected I/O connector or IC pin, with short, direct traces to both signal and ground. Use the recommended SL2 land pattern (0.3 mm pad width, 0.4 mm pad length), and connect Pin 2 directly to a solid ground plane-avoid daisy-chained or high-inductance GND paths that degrade clamping speed.
Is the DF2B7ASL,L3F suitable for protecting 3.3 V logic interfaces?
No-the DF2B7ASL,L3F has a 5.5 V working peak reverse voltage and is specified for 5 V signal lines. Using it on 3.3 V interfaces risks premature conduction during normal operation due to insufficient voltage margin; Toshiba recommends dedicated 3.3 V-rated devices such as the DF2S7ASL,L3F for those applications.
DF2B7ASL,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.5V
- Voltage - Breakdown (Min):
- 5.8V
- Voltage - Clamping (Max) @ Ipp:
- 20V
- Current - Peak Pulse (10/1000µs):
- 4A (8/20µs)
- Power - Peak Pulse:
- 80W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 8.5pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SL2
DF2B7ASL,L3F FAQ
1.How can I place an order for DF2B7ASL,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B7ASL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B7ASL,L3F reliable?
The price and inventory of DF2B7ASL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B7ASL,L3F is usually 5 days.
3.What payment methods are accepted for DF2B7ASL,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B7ASL,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B7ASL,L3F?
DF2B7ASL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B7ASL,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B7ASL,L3F?
For technical support, including DF2B7ASL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B7ASL,L3F requirements.
6.How does Aetrix verify that DF2B7ASL,L3F is sourced from the original manufacturer or authorized distributors?
All DF2B7ASL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B7ASL,L3F meets industry standards.
7.What is the process for return or replacement of DF2B7ASL,L3F?
All DF2B7ASL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B7ASL,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B7ASL,L3F part is unused and in its original packaging.
Return procedure for DF2B7ASL,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B7ASL,L3F Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
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Diodes Incorporated
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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