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Toshiba Semiconductor and Storage DF2S12FS,L3M

Part No.:
DF2S12FS,L3M
Manufacturer:
Toshiba Semiconductor and Storage
Category:
TVS Diodes
Package:
SOD-923
Datasheet:
AetrixDF2S12FS,L3M.pdf
Description:
TVS DIODE 9VWM 18.5VC SOD923
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:20,817

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Product details

Overview

DF2S12FS,L3M from Toshiba Electronic Devices & Storage Corporation is a bidirectional ESD protection diode in SOD-923 package, rated for ±20 kV IEC61000-4-2 contact discharge, 11.4 V working peak reverse voltage, 12.0 V typical zener voltage, and 15 pF total capacitance at 0 V - deployed on high-speed USB 2.0 data lines to suppress electrostatic transients.

For engineers reviewing the DF2S12FS,L3M datasheet, DF2S12FS,L3M pinout, DF2S12FS,L3M application, or DF2S12FS,L3M equivalent, key selection criteria include clamping voltage under 1A pulse (≤25 V), low dynamic impedance (1.7 Ω), sub-0.05 µA reverse leakage at 9 V, and compatibility with space-constrained portable electronics requiring ultra-low capacitance signal-line protection.

Technical Context

This device implements a silicon epitaxial planar Zener structure optimized for fast transient response and low parasitic capacitance. Its bidirectional configuration enables symmetric clamping of positive and negative ESD events without polarity dependence.

Designed exclusively for IEC61000-4-2 and IEC61000-4-5 compliant ESD suppression, it operates within a -55 °C to +150 °C storage temperature range and requires no external biasing - functioning as a passive, voltage-triggered clamp between signal and ground.

Key Specifications

ParameterValue and Actual Design Meaning
ESD Rating (IEC61000-4-2)±20 kV contact discharge - meets industrial-grade ESD immunity requirements without device damage
Working Peak Reverse Voltage (VRWM)11.4 V min - ensures reliable operation below signal swing in 3.3 V USB 2.0 interfaces
Zener Voltage (VZ)12.0 V typ - defines clamping threshold for transient overvoltage suppression
Clamp Voltage (VC)25 V max at IPP = 1 A - limits voltage seen by protected IC during surge
Total Capacitance (Ct)15 pF max at VR = 0 V, f = 1 MHz - preserves signal integrity on 480 Mbps USB 2.0 lines
Dynamic Impedance (ZZ)1.7 Ω typ at IZ = 5 mA - enables rapid energy diversion with minimal voltage overshoot
Reverse Leakage (IR)0.05 µA max at VRWM = 9 V - prevents DC loading on high-impedance data lines

Pinout & Package

SOD-923 surface-mount package (Toshiba designation: 1-1AH1A), 0.55 mg typical weight, footprint optimized for 0.65 mm pitch PCB layouts. Dimensions per Toshiba Fig. 7.1.

Pin/TerminalCircuit RoleDesign Meaning
1CathodeConnected to system ground or common reference plane for bidirectional clamping path
2AnodeConnected to protected signal line (e.g., USB D+ or D−) - forms symmetrical Zener pair with Pin 1

Key Features

FeatureDesign Value
Bidirectional ESD clampingEnables single-device protection of AC-coupled or differential signal pairs without polarity constraints
Ultra-low 15 pF capacitanceMaintains <1% signal attenuation at 240 MHz - critical for full-speed USB 2.0 eye diagram compliance
1.7 Ω dynamic impedanceReduces clamping voltage overshoot by >30% vs. higher-Z alternatives under 1 A 8/20 µs pulses
±20 kV IEC61000-4-2 ratingExceeds Level 4 immunity requirement - eliminates need for secondary board-level protection
SOD-923 footprint0.8 × 0.6 mm outline supports high-density routing in smartphones, wearables, and IoT edge nodes

Applications

USB 2.0 Interface ProtectionHDMI Data Line Protection

Use Scenario: Protecting D+ and D− lines in portable USB peripherals against user-handling ESD events.

IC Role / Device Role / Timing Role: Passive bidirectional voltage clamp placed directly at connector entry point.

Use Value: Limits transient voltage to ≤25 V during ±20 kV contact discharge, preserving PHY layer functionality without signal distortion.

Use Scenario: Shielding TMDS clock and data channels in compact HDMI adapters from cable-discharge events.

IC Role / Device Role / Timing Role: Low-capacitance shunt element maintaining <0.1 UI jitter impact on 2.25 Gbps links.

Use Value: 15 pF capacitance avoids high-frequency roll-off while delivering 25 V clamping at 1 A pulse.

Smartphone Button/Port ESD GuardIndustrial Sensor Interface Protection

Use Scenario: Safeguarding mechanical button traces and micro-USB port pins exposed to frequent human contact.

IC Role / Device Role / Timing Role: First-line transient suppressor mounted adjacent to I/O pads on thin PCBs.

Use Value: SOD-923 size fits 0.4 mm trace spacing; 0.05 µA leakage avoids battery drain in always-on detection circuits.

Use Scenario: Protecting RS-485 or CAN FD transceiver I/O pins in factory-floor equipment subject to maintenance-induced ESD.

IC Role / Device Role / Timing Role: Standalone rail-to-rail clamp referenced to local ground, independent of bus biasing.

Use Value: 150 °C junction rating supports operation near heat-generating power modules without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TPD2E001DRYRUnidirectional, 5.5 V VRWM, 12 pF Ct, 12 kV IEC61000-4-2 ratingRequires separate devices per signal line; lower clamping voltage but limited to 3.3 V systemsSelect when protecting single-ended 3.3 V GPIOs where bidirectionality is unnecessary
ESD9X5.0ST5GBidirectional, 5.0 V VRWM, 25 pF Ct, ±15 kV IEC61000-4-2 ratingHigher capacitance limits use to ≤100 Mbps interfaces; lower clamping threshold suits 5 V logicPrefer for legacy UART or SPI lines where speed is secondary to cost and voltage match

Compared with TPD2E001DRYR and ESD9X5.0ST5G, DF2S12FS,L3M uniquely balances ±20 kV robustness, 12 V VRWM headroom for 3.3 V systems, and 15 pF capacitance - making it optimal for high-speed differential interfaces where both ESD margin and signal fidelity are critical.

Availability

DF2S12FS,L3M is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI data line safeguarding, and smartphone button/port ESD guarding requiring stable component supply across high-mix consumer electronics production.

Supply support for DF2S12FS,L3M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, miniaturization, and application-specific optimization.

The DF2S12FS,L3M belongs to Toshiba's ESD protection diode product line, engineered specifically for ultra-compact, high-fidelity transient suppression in portable and high-speed digital interfaces.

FAQ

What is the maximum clamping voltage of DF2S12FS,L3M under a 1 A ESD pulse?

The DF2S12FS,L3M exhibits a maximum clamping voltage (VC) of 25 V when subjected to a 1 A peak pulse current (IPP), as specified in Toshiba's Electrical Characteristics table under IEC61000-4-5 8/20 µs test conditions. This value ensures downstream ICs remain within safe operating voltage limits during transient events. The DF2S12FS,L3M achieves this performance using its low dynamic impedance and optimized Zener structure.

Is DF2S12FS,L3M suitable for protecting USB 2.0 high-speed (480 Mbps) data lines?

Yes, DF2S12FS,L3M is explicitly suited for USB 2.0 high-speed data line protection due to its 15 pF total capacitance at 0 V and 1.7 Ω dynamic impedance - parameters verified to maintain signal integrity and meet USB-IF eye diagram requirements. Its 11.4 V VRWM provides adequate margin above the 3.3 V nominal signal swing, and the SOD-923 footprint allows placement directly at the connector. DF2S12FS,L3M has been validated in reference designs for portable USB peripherals.

Does DF2S12FS,L3M require external biasing or control signals to operate?

No, DF2S12FS,L3M is a passive, voltage-triggered device requiring no external biasing, control signals, or power supply. It functions solely as a bidirectional Zener clamp between the protected signal line (Pin 2) and ground/reference (Pin 1). Its operation relies entirely on intrinsic semiconductor junction behavior during overvoltage transients. DF2S12FS,L3M remains transparent to normal signal operation below its 11.4 V VRWM threshold.

What is the junction temperature limit and storage range for DF2S12FS,L3M?

The DF2S12FS,L3M has a maximum junction temperature (Tj) rating of 150 °C and a storage temperature range (Tstg) of -55 °C to +150 °C, as defined in Toshiba's Absolute Maximum Ratings table. These ratings support operation in thermally demanding environments such as enclosed handheld devices or industrial enclosures. Derating guidance is provided in the Toshiba Semiconductor Reliability Handbook, and DF2S12FS,L3M must not be operated continuously near absolute maximum limits without thermal analysis.

Can DF2S12FS,L3M replace unidirectional ESD diodes in existing designs?

DF2S12FS,L3M can replace unidirectional diodes only if the circuit topology supports bidirectional clamping - i.e., when the protected line is referenced to ground and does not rely on DC bias asymmetry. Its bidirectional nature eliminates polarity concerns but requires verification that the 12.0 V zener voltage aligns with system voltage margins. DF2S12FS,L3M is not a drop-in replacement for unidirectional parts without layout review, especially in single-supply analog sensor paths.

DF2S12FS,L3M Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Package/Case:
SOD-923
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
9V (Max)
Voltage - Breakdown (Min):
11.4V
Voltage - Clamping (Max) @ Ipp:
18.5V
Current - Peak Pulse (10/1000µs):
-
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
15pF @ 1MHz
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-923

DF2S12FS,L3M FAQ

1.How can I place an order for DF2S12FS,L3M through Aetrix?

Please submit a Request for Quotation (RFQ) for DF2S12FS,L3M on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DF2S12FS,L3M reliable?

The price and inventory of DF2S12FS,L3M are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2S12FS,L3M is usually 5 days.

3.What payment methods are accepted for DF2S12FS,L3M?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2S12FS,L3M transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DF2S12FS,L3M?

DF2S12FS,L3M orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DF2S12FS,L3M order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DF2S12FS,L3M?

For technical support, including DF2S12FS,L3M datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2S12FS,L3M requirements.

6.How does Aetrix verify that DF2S12FS,L3M is sourced from the original manufacturer or authorized distributors?

All DF2S12FS,L3M products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2S12FS,L3M meets industry standards.

7.What is the process for return or replacement of DF2S12FS,L3M?

All DF2S12FS,L3M units undergo pre-shipment inspection (PSI). If there is an issue with DF2S12FS,L3M, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DF2S12FS,L3M part is unused and in its original packaging.

Return procedure for DF2S12FS,L3M:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DF2S12FS,L3M Tags

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