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Toshiba Semiconductor and Storage DF2S14P2CTC,L3F

Part No.:
DF2S14P2CTC,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Category:
TVS Diodes
Package:
2-SMD, No Lead
Datasheet:
AetrixDF2S14P2CTC,L3F.pdf
Description:
TVS DIODE 12.6VWM CST2C
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,011

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Product details

Overview

DF2S14P2CTC from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for bidirectional transient voltage suppression on 12 V signal lines in mobile device interfaces. It delivers ±30 kV IEC61000-4-2 contact ESD immunity, 28 V clamping voltage at 50 A peak pulse current, and ultra-low 0.08 Ω dynamic resistance - enabling robust protection of USB, HDMI, and audio interfaces against electrostatic discharge and fast transients.

For engineers reviewing the DF2S14P2CTC datasheet, DF2S14P2CTC pinout, DF2S14P2CTC application, or DF2S14P2CTC equivalent, key selection criteria include working peak reverse voltage (12.6 V), snapback clamping behavior, 270 pF capacitance at 0 V, CST2C package footprint compatibility, and compliance with IEC61000-4-2/4-5 standards for portable electronics design.

Technical Context

The DF2S14P2CTC employs a silicon epitaxial planar structure with snapback-triggered TVS operation, enabling low clamping voltage (28 V typ. @ 50 A) while maintaining high ESD withstand capability. Its bidirectional configuration supports symmetric protection on data lines without polarity constraints.

Designed specifically for high-density mobile PCB layouts, the device operates within a 12 V signal line window (VRWM ≤ 12.6 V) and exhibits stable TLP-derived dynamic resistance (0.08 Ω typ.) across 16–30 A test range - critical for minimizing voltage overshoot during fast-rising ESD events.

Key Specifications

Parameter Value and Actual Design Meaning
VRWM 12.6 V max - ensures reliable blocking of normal 12 V signal line operation without leakage or false triggering
VESD (IEC61000-4-2) ±30 kV contact - meets highest industrial ESD immunity requirement for handheld interface ports
VC @ IPP = 50 A 28 V typ. - clamps transient energy below IC damage threshold for protected downstream logic
RDYN 0.08 Ω typ. - minimizes IR drop during surge, preserving signal integrity and reducing thermal stress
Ct @ 0 V 270 pF - balances ESD robustness with acceptable signal loading for USB 2.0 and audio paths
Package CST2C (1.6 mm × 0.8 mm) - enables placement adjacent to connectors in space-constrained smartphone PCBs
PPK (8/20 µs) 1600 W - sustains indirect lightning and power-rail switching transients per IEC61000-4-5

Pinout & Package

The DF2S14P2CTC is housed in the ultra-compact CST2C surface-mount package (1.6 mm × 0.8 mm, 1.5 mg typical weight), optimized for high-density mobile PCB layouts. Its two-terminal configuration supports bidirectional ESD protection without polarity dependency.

Pin/Terminal Circuit Role Design Meaning
1 (Cathode) Protected line connection (anode-side reference) Connected to signal line; forms snapback path with terminal 2 during positive transients
2 (Anode) Protected line connection (cathode-side reference) Connected to same signal line; completes bidirectional clamping path during negative transients

Key Features

Feature Design Value
Bidirectional snapback clamping Enables symmetrical protection on AC-coupled or differential data lines without external biasing
Low dynamic resistance (0.08 Ω) Reduces voltage overshoot during sub-nanosecond ESD events, improving margin for 1.8 V/3.3 V I/O cells
270 pF capacitance at 0 V Preserves signal rise/fall times in USB 2.0 (480 Mbps) and analog audio paths while meeting ESD specs
12.6 V VRWM rating Supports direct integration on 12 V automotive infotainment display interfaces and industrial HMI signal lines
CST2C package footprint Allows placement within 0.3 mm of micro-B/USB-C connector pads - critical for ESD effectiveness

Applications

Smartphone USB Interface Protection Tablet HDMI Signal Line Protection

Use Scenario: Protects USB 2.0 D+ and D− lines from user-handling ESD in compact smartphone designs.

IC Role / Device Role / Timing Role: Bidirectional TVS diode placed immediately adjacent to USB connector to clamp transients before reaching PHY IC.

Use Value: Maintains 270 pF capacitance to avoid signal integrity degradation while delivering ±30 kV IEC61000-4-2 immunity.

Use Scenario: Shields HDMI TMDS clock and data pairs from ESD events during cable insertion in tablet displays.

IC Role / Device Role / Timing Role: Low-capacitance ESD suppressor mounted at HDMI receptacle to limit voltage overshoot to <28 V.

Use Value: Snapback clamping ensures fast response (<1 ns) without affecting 165 MHz TMDS timing margins.

Notebook PC Audio Jack Protection Industrial HMI Touch Panel Interface

Use Scenario: Guards 3.5 mm audio jack MIC and GND lines against repeated plug/unplug ESD in ultrabook designs.

IC Role / Device Role / Timing Role: Two-terminal ESD protector placed inline between jack and codec to shunt transient current.

Use Value: 0.08 Ω RDYN minimizes voltage rise across protection path, preventing false triggers in sensitive analog front-end.

Use Scenario: Protects projected capacitive touch controller I²C lines from ESD in factory-floor HMIs exposed to dry environments.

IC Role / Device Role / Timing Role: Bidirectional TVS on SDA/SCL lines operating at 12 V supply rail, referenced to system ground.

Use Value: 12.6 V VRWM allows direct use on 12 V-powered touch controllers without level-shifting circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NZQ2S14T5G Higher VRWM (14 V), higher Ct (350 pF), same CST2C package and ±30 kV ESD rating Better suited for 13.5 V automotive infotainment buses; less optimal for USB 2.0 due to increased capacitance Select when protecting 12–14 V signal lines where margin above 12.6 V is required and signal bandwidth is lower than 200 MHz
Vishay VE14A02 Different package (SOD-923, 1.0 mm × 0.6 mm), lower VC (24 V @ 50 A), slightly lower ESD rating (±25 kV) Smaller footprint but reduced clamping performance; requires revalidation for IEC61000-4-2 Level 4 compliance Consider only if board area is constrained beyond CST2C limits and 25 kV ESD immunity suffices for target market certification

Compared with NZQ2S14T5G and VE14A02, the DF2S14P2CTC offers the optimal balance of 12.6 V VRWM headroom, 270 pF capacitance for high-speed interfaces, and guaranteed ±30 kV ESD performance in the industry-standard CST2C footprint - making it the preferred choice for USB/HDMI/audio protection in mobile consumer devices.

Availability

DF2S14P2CTC is available at Aetrix Electronics and suitable for smartphone interface protection, tablet HDMI shielding, and notebook PC audio jack ESD suppression requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for DF2S14P2CTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and protection components for consumer, industrial, and automotive markets.

The DF2S14P2CTC belongs to Toshiba's CST2C-series ESD protection portfolio, engineered specifically for high-density mobile electronics requiring sub-millimeter footprint, bidirectional snapback clamping, and IEC61000-4-2 Level 4 compliance.

FAQ

What is the maximum working peak reverse voltage (VRWM) specified for the DF2S14P2CTC?

The DF2S14P2CTC has a maximum working peak reverse voltage (VRWM) of 12.6 V, ensuring reliable operation on 12 V signal lines without leakage or premature conduction. This rating is confirmed in Toshiba's official datasheet Rev.3.0 (2018-12-06) under Electrical Characteristics, and defines the upper limit of continuous reverse voltage the DF2S14P2CTC can block during normal system operation.

Does the DF2S14P2CTC support bidirectional ESD protection?

Yes, the DF2S14P2CTC provides true bidirectional ESD protection via its symmetric snapback structure - terminals 1 (cathode) and 2 (anode) function identically under both positive and negative transients. This eliminates polarity concerns during layout and enables direct placement on differential or AC-coupled lines such as USB D+/D− without external biasing, as verified in the Internal Circuit diagram and Absolute Maximum Ratings section of the DF2S14P2CTC datasheet.

What is the clamping voltage (VC) of the DF2S14P2CTC at 50 A peak pulse current?

The DF2S14P2CTC delivers a typical clamping voltage (VC) of 28 V at 50 A peak pulse current (8/20 µs waveform), as specified in the Quick Reference Data and Electrical Characteristics tables. This value reflects the maximum voltage seen by downstream ICs during worst-case surge events and is critical for ensuring protected logic remains below absolute maximum ratings - a key parameter validated in the DF2S14P2CTC's VC–IPP curve (Fig. 6.3.1).

What package type does the DF2S14P2CTC use, and what are its dimensions?

The DF2S14P2CTC uses the CST2C package - an ultra-compact surface-mount case measuring 1.6 mm × 0.8 mm with a typical weight of 1.5 mg. This package is explicitly named in the Package Dimensions section (page 8) and Land Pattern Dimensions (page 7) of the DF2S14P2CTC datasheet Rev.3.0, and is optimized for placement adjacent to connectors in smartphones, tablets, and other space-constrained portable electronics.

How does the DF2S14P2CTC achieve low dynamic resistance, and why is it important?

The DF2S14P2CTC achieves a typical dynamic resistance (RDYN) of 0.08 Ω through its silicon epitaxial planar structure and optimized snapback trigger design, measured using TLP with Z0 = 50 Ω, tp = 100 ns, and extraction between 16–30 A (Note 2, Quick Reference Data). This low RDYN minimizes IR voltage overshoot during nanosecond-scale ESD events, directly improving protection margin for sensitive 1.8 V and 3.3 V I/O circuits downstream of the DF2S14P2CTC.

DF2S14P2CTC,L3F Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Package/Case:
2-SMD, No Lead
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
12.6V
Voltage - Breakdown (Min):
12.9V
Voltage - Clamping (Max) @ Ipp:
-
Current - Peak Pulse (10/1000µs):
50A
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
270pF @ 1MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
CST2C

DF2S14P2CTC,L3F FAQ

1.How can I place an order for DF2S14P2CTC,L3F through Aetrix?

Please submit a Request for Quotation (RFQ) for DF2S14P2CTC,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DF2S14P2CTC,L3F reliable?

The price and inventory of DF2S14P2CTC,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2S14P2CTC,L3F is usually 5 days.

3.What payment methods are accepted for DF2S14P2CTC,L3F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2S14P2CTC,L3F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DF2S14P2CTC,L3F?

DF2S14P2CTC,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DF2S14P2CTC,L3F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DF2S14P2CTC,L3F?

For technical support, including DF2S14P2CTC,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2S14P2CTC,L3F requirements.

6.How does Aetrix verify that DF2S14P2CTC,L3F is sourced from the original manufacturer or authorized distributors?

All DF2S14P2CTC,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2S14P2CTC,L3F meets industry standards.

7.What is the process for return or replacement of DF2S14P2CTC,L3F?

All DF2S14P2CTC,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2S14P2CTC,L3F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DF2S14P2CTC,L3F part is unused and in its original packaging.

Return procedure for DF2S14P2CTC,L3F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DF2S14P2CTC,L3F Tags

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