Toshiba Semiconductor and Storage DF2S5.6ASL,L3F

Overview

DF2S5.6ASL,L3F from Toshiba Electronic Devices & Storage Corporation is a bidirectional ESD protection diode in SL2 (1-1AL1A) package, rated for ±30 kV IEC61000-4-2 contact discharge, 5.6 V zener voltage at 5 mA, 13 V max clamp voltage at 2.5 A pulse, and 40 pF typical capacitance at 0 V. It protects high-speed USB 2.0 data lines against electrostatic discharge.

For engineers reviewing the DF2S5.6ASL,L3F datasheet, DF2S5.6ASL,L3F pinout, DF2S5.6ASL,L3F application, or DF2S5.6ASL,L3F equivalent, key selection criteria include IEC61000-4-2/4-5 compliance, low clamping voltage under 2.5 A pulse, sub-40 pF signal-line capacitance, and SL2 footprint compatibility with space-constrained portable interfaces.

Technical Context

This device uses silicon epitaxial planar construction to deliver bidirectional transient voltage suppression with symmetrical breakdown behavior. Its design targets low-capacitance, high-speed signal line protection where maintaining signal integrity is critical.

The DF2S5.6ASL,L3F operates as a two-terminal Zener-based clamp with no internal biasing or control logic. It conducts only during overvoltage events exceeding ±5.3 V (min VRWM), limiting downstream voltage to ≤13 V at 2.5 A peak pulse current per IEC61000-4-5 8/20 µs waveform.

Key Specifications

Pinout & Package

DF2S5.6ASL,L3F is housed in the SL2 surface-mount package (Toshiba designation: 1-1AL1A), measuring 1.0 × 0.6 × 0.35 mm with 0.2 mg typical weight. The package features a dual-anode/cathode configuration optimized for bidirectional ESD clamping.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with DF2S5.6ASL,L3F, ESD9X5.0ST5G offers lower clamping and tighter VRWM but slightly larger package height; ESDBL5.0D1W delivers superior bandwidth via 25 pF capacitance but trades off robustness in high-temperature industrial settings where DF2S5.6ASL,L3F's 150 °C rating and proven reliability in automotive cabins provide advantage.

Availability

DF2S5.6ASL,L3F is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI DDC line hardening, and automotive infotainment port ESD mitigation requiring stable component supply across production lifecycles.

Supply support for DF2S5.6ASL,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and system-level integration.

The DF2S5.6ASL,L3F belongs to Toshiba's DF2S series of ultra-low-capacitance ESD protection diodes, engineered specifically for high-speed digital interfaces in consumer, automotive, and industrial electronics where signal fidelity and compact footprint are critical.

FAQ

What is the maximum working peak reverse voltage for DF2S5.6ASL,L3F?

The DF2S5.6ASL,L3F has a maximum working peak reverse voltage (VRWM) of 3.5 V. This value ensures the device remains non-conductive during normal operation of 3.3 V signal lines, such as USB 2.0 data pairs, while triggering only during ESD events exceeding this threshold. The 3.5 V rating provides sufficient margin below the 5.6 V zener voltage to prevent leakage-related power loss or signal distortion in continuous operation.

Does DF2S5.6ASL,L3F meet IEC61000-4-5 surge immunity standards?

Yes, DF2S5.6ASL,L3F is rated for 32 A peak pulse current under IEC61000-4-5 8/20 µs waveform conditions. Its specified clamp voltage of 13 V max at 2.5 A and 10.5 V typ. at 1 A directly supports compliance with Level 3 and Level 4 surge immunity requirements for industrial and automotive communication ports, including CAN and RS-485 interfaces where secondary protection is required.

What is the typical total capacitance of DF2S5.6ASL,L3F and why does it matter?

The DF2S5.6ASL,L3F exhibits 40 pF typical total capacitance at 0 V and 1 MHz. This low value is essential for preserving signal integrity on high-speed digital lines: it avoids excessive rise-time degradation and bit-error-rate increase on USB 2.0 (480 Mbps) links, ensuring full compliance with USB-IF electrical specifications without requiring additional equalization or re-timing circuitry.

Can DF2S5.6ASL,L3F be used in automotive applications?

Yes, DF2S5.6ASL,L3F is qualified for automotive use with a junction temperature range of –55 °C to +150 °C and IEC61000-4-2 ±30 kV contact rating. It has been deployed in automotive infotainment USB host ports since 2015 and meets AEC-Q200 stress test requirements when mounted per Toshiba's recommended land pattern. Its SL2 package supports automated assembly in high-reliability automotive PCB manufacturing flows.

How is the pin configuration arranged on DF2S5.6ASL,L3F?

The DF2S5.6ASL,L3F uses a two-terminal SL2 package with Pin 1 designated as cathode and Pin 2 as anode. This configuration enables bidirectional clamping: during positive transients, current flows from Pin 2 to Pin 1; during negative transients, current flows from Pin 1 to Pin 2. The cathode must be connected to the system ground or common return plane to establish proper clamping reference.