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Toshiba Semiconductor and Storage DF2S5M4SL,L3F
- Part No.:
- DF2S5M4SL,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 2-SMD, No Lead
- Datasheet:
-
DF2S5M4SL,L3F.pdf
- Description:
- TVS DIODE 3.6VWM 15VC SL2
- Quantity:
- Payment:
- Shipping:
Inventory:50,266
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Product details
Overview
DF2S5M4SL,L3F from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for high-speed signal lines in mobile interfaces, featuring ±20 kV IEC61000-4-2 contact/air ESD immunity, 0.35 pF typical capacitance, 0.3 Ω dynamic resistance, and a 3.6 V working peak reverse voltage - enabling robust protection of USB, HDMI, and MIPI interfaces without signal integrity degradation.
For engineers reviewing the DF2S5M4SL,L3F datasheet, DF2S5M4SL,L3F pinout, DF2S5M4SL,L3F application, or DF2S5M4SL,L3F equivalent, key selection criteria include low clamping voltage (8 V @ 2 A), ultra-small SL2 package (0.62 mm × 0.32 mm), snapback-triggered low-RDYN response, and compatibility with 3.3 V logic systems requiring sub-0.5 pF parasitic capacitance.
Technical Context
The DF2S5M4SL,L3F employs silicon epitaxial planar technology with snapback-triggered TVS behavior, delivering fast turn-on (<1 ns) and low clamping under transient stress. Its bidirectional structure protects both positive and negative ESD events while maintaining stable reverse leakage (<0.1 µA @ 3.6 V).
Designed specifically for I/O line protection, it operates within a 3.3 V system margin (VRWM ≤ 3.6 V), supports peak pulse currents up to 2 A per IEC61000-4-5 (8/20 µs), and achieves 30 W peak pulse power handling - all within its 0.2 mg SL2 footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 3.6 V - sets maximum continuous DC bias before leakage rises; compatible with 3.3 V rail systems. |
| Total Capacitance | 0.35 pF (typ.) - ensures minimal signal distortion on high-speed interfaces like USB 2.0 or MIPI D-PHY. |
| Dynamic Resistance | 0.3 Ω (typ.) - enables rapid voltage clamping and low energy dissipation during ESD transients. |
| Clamp Voltage | 8 V @ 2 A (typ.) - limits downstream IC voltage stress during 8/20 µs surges, protecting sensitive inputs. |
| ESD Withstand | ±20 kV (IEC61000-4-2 Contact/Air) - exceeds industrial and consumer ESD immunity requirements. |
| Package Size | 0.62 mm × 0.32 mm - fits dense PCB layouts in smartphones and tablets; SL2 footprint standard. |
Pinout & Package
DF2S5M4SL,L3F is housed in the SL2 ultra-compact surface-mount package (0.62 mm × 0.32 mm, 0.2 mg), optimized for space-constrained mobile applications. The device uses a bidirectional two-terminal configuration with no polarity marking required for ESD protection placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 | Cathode | Connected to protected signal line; forms one side of bidirectional ESD path to ground. |
| Terminal 2 | Anode | Connected to ground reference; completes low-impedance discharge path during ESD events. |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables sub-8 V clamping at 2 A with <0.3 Ω dynamic resistance, reducing voltage overshoot on protected nodes. |
| Ultra-low capacitance | 0.35 pF typical ensures <0.1 dB insertion loss at 1 GHz - critical for >480 Mbps data links. |
| High-density SL2 package | 0.62 mm × 0.32 mm footprint allows placement directly at connector I/O, minimizing trace inductance. |
| 3.3 V system compatibility | 3.6 V VRWM aligns with 3.3 V nominal rails while providing 0.3 V margin against ripple-induced conduction. |
Applications
| USB 2.0 Interface Protection | HDMI DDC Line Protection |
|---|---|
Use Scenario: Protecting USB 2.0 D+ and D− lines in smartphone charging ports against repeated plug/unplug ESD events. IC Role / Device Role / Timing Role: Bidirectional ESD clamp placed between connector and PHY, shunting transients to ground before reaching controller. Use Value: Maintains signal integrity with <0.5 pF max capacitance while surviving ≥20 kV contact discharges per IEC61000-4-2. |
Use Scenario: Safeguarding HDMI DDC (I²C) clock/data lines in tablet display modules exposed to user-handling ESD. IC Role / Device Role / Timing Role: Low-capacitance TVS diode installed inline on 3.3 V DDC bus to prevent latch-up in sink-side level shifters. Use Value: 0.35 pF typical capacitance avoids timing skew on 100 kHz I²C signals; ±20 kV rating covers worst-case human-body-model exposure. |
| MIPI D-PHY Data Lanes | Smartphone Antenna Switch Control |
Use Scenario: ESD protection for MIPI D-PHY high-speed differential pairs (CLK/HS/LP) in camera module flex cables. IC Role / Device Role / Timing Role: Dual-channel (shared cathode/anode) ESD suppressor mounted at FPC connector to minimize stub length. Use Value: Sub-0.5 pF capacitance prevents eye diagram closure at 1.5 Gbps; snapback behavior ensures <100 ps response time. |
Use Scenario: Protecting GPIO-controlled antenna switch enable lines in LTE/5G front-end modules from board-level ESD coupling. IC Role / Device Role / Timing Role: Unidirectional (bidirectional configured) clamp on 1.8 V/3.3 V control lines driving GaAs pHEMT switches. Use Value: 3.6 V VRWM accommodates 3.3 V logic swing; 8 V clamping prevents gate oxide damage in RF switches during handling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor ESD9X3.3S | 0.5 pF max capacitance, 12 V clamping @ 1 A, SOD-923 package (1.0 mm × 0.6 mm) | Larger footprint; higher clamping voltage reduces margin for 3.3 V I/O but suits less speed-critical lines. | Select when board layout allows larger package and system tolerates higher VC; not suitable for >500 Mbps interfaces. |
| Vishay VEML3328 | 0.25 pF typical capacitance, ±25 kV ESD rating, 0.6 mm × 0.3 mm DFN package | Lower capacitance improves RF performance but requires tighter layout control due to smaller pad pitch. | Prefer for ultra-high-frequency applications (e.g., 5 Gbps USB3.2 Gen1) where <0.3 pF is mandatory; verify solder joint reliability. |
Compared with ESD9X3.3S and VEML3328, the DF2S5M4SL,L3F delivers optimal balance of 0.35 pF capacitance, 8 V clamping, and SL2 footprint - making it ideal for mainstream mobile I/O protection where size, speed, and cost must coexist.
Availability
DF2S5M4SL,L3F is available at Aetrix Electronics and suitable for smartphone interface protection, tablet display module safeguarding, and notebook PC USB port hardening requiring stable component supply across high-volume production cycles.
Supply support for DF2S5M4SL,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for consumer, industrial, and automotive markets, with expertise in discrete protection devices and power management ICs.
The DF2S5M4SL,L3F belongs to Toshiba's SL2-series ESD protection portfolio, engineered specifically for space-constrained, high-speed digital interfaces in portable electronics where low capacitance and fast transient response are non-negotiable.
FAQ
What is the primary function of the DF2S5M4SL,L3F?
The DF2S5M4SL,L3F is a bidirectional ESD protection diode designed to safeguard high-speed signal lines from electrostatic discharge events. It operates using snapback characteristics to achieve low dynamic resistance (0.3 Ω typ.) and low clamping voltage (8 V @ 2 A), ensuring reliable protection for 3.3 V interfaces such as USB, HDMI, and MIPI without degrading signal integrity. Its role is strictly ESD suppression - not voltage regulation or surge suppression beyond IEC61000-4-2/4-5 compliance.
Does the DF2S5M4SL,L3F support both contact and air-gap ESD testing per IEC61000-4-2?
Yes, the DF2S5M4SL,L3F is rated for ±20 kV under both contact discharge and air-gap discharge conditions per IEC61000-4-2. This dual certification confirms its ability to withstand real-world ESD threats encountered during handling and operation of portable devices. The specification is verified through standardized test setups and applies to the device itself - not dependent on PCB layout or external components.
What is the significance of the SL2 package designation for the DF2S5M4SL,L3F?
The SL2 package refers to Toshiba's proprietary ultra-compact surface-mount footprint measuring 0.62 mm × 0.32 mm with a height of 0.25 mm. For the DF2S5M4SL,L3F, this enables direct placement at I/O connectors in smartphones and tablets, minimizing trace inductance and maximizing protection effectiveness. Its 0.2 mg mass and two-terminal configuration simplify routing and reduce board area versus larger alternatives like SOD-923 or SC-79.
Can the DF2S5M4SL,L3F be used on 1.8 V logic lines?
No - the DF2S5M4SL,L3F has a 3.6 V working peak reverse voltage (VRWM), making it unsuitable for direct use on 1.8 V signal lines where operating voltage margins are insufficient. Using it on 1.8 V rails risks premature conduction due to ripple or noise exceeding VRWM, leading to increased leakage and potential signal corruption. For 1.8 V applications, a lower-VRWM device such as DF2S5.6M4SL (5.6 V VRWM) is not appropriate either; a dedicated 1.8 V-rated ESD suppressor must be selected.
How does the DF2S5M4SL,L3F's dynamic resistance impact system-level ESD performance?
The DF2S5M4SL,L3F's 0.3 Ω typical dynamic resistance (RDYN) directly determines how effectively it clamps voltage during fast ESD transients. Lower RDYN enables faster energy diversion to ground, resulting in reduced peak voltage seen by downstream ICs - critical for preventing latch-up or gate oxide damage. This value is measured via TLP analysis between 8 A and 16 A, confirming consistent low-impedance behavior across the specified pulse range.
DF2S5M4SL,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 2-SMD, No Lead
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.6V (Max)
- Voltage - Breakdown (Min):
- 3.7V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- 30W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 0.35pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SL2
DF2S5M4SL,L3F FAQ
1.How can I place an order for DF2S5M4SL,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2S5M4SL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2S5M4SL,L3F reliable?
The price and inventory of DF2S5M4SL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2S5M4SL,L3F is usually 5 days.
3.What payment methods are accepted for DF2S5M4SL,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2S5M4SL,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2S5M4SL,L3F?
DF2S5M4SL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2S5M4SL,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2S5M4SL,L3F?
For technical support, including DF2S5M4SL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2S5M4SL,L3F requirements.
6.How does Aetrix verify that DF2S5M4SL,L3F is sourced from the original manufacturer or authorized distributors?
All DF2S5M4SL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2S5M4SL,L3F meets industry standards.
7.What is the process for return or replacement of DF2S5M4SL,L3F?
All DF2S5M4SL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2S5M4SL,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2S5M4SL,L3F part is unused and in its original packaging.
Return procedure for DF2S5M4SL,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2S5M4SL,L3F Tags
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