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Toshiba Semiconductor and Storage DF2S5M5SL,L3F
- Part No.:
- DF2S5M5SL,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 2-SMD, No Lead
- Datasheet:
-
DF2S5M5SL,L3F.pdf
- Description:
- TVS DIODE 3.3VWM 16VC SL2
- Quantity:
- Payment:
- Shipping:
Inventory:5,690
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Product details
Overview
DF2S5M5SL from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for high-speed signal lines in mobile interfaces, featuring 3.3 V working peak reverse voltage (VRWM), ±20 kV IEC61000-4-2 contact/air ESD immunity, 0.6 pF typical capacitance, 0.3 Ω dynamic resistance, and ultra-compact SL2 package (0.62 mm × 0.32 mm). It safeguards USB, HDMI, and MIPI data lines against electrostatic discharge in smartphones and tablets.
For engineers reviewing the DF2S5M5SL datasheet, DF2S5M5SL pinout, DF2S5M5SL application, or DF2S5M5SL equivalent, key selection criteria include low clamping voltage (7.8 V @ 2.5 A), snapback-triggered protection behavior, sub-1 pF capacitance for minimal signal distortion, and compatibility with 3.3 V logic-level interfaces in space-constrained PCB layouts.
Technical Context
The DF2S5M5SL employs silicon epitaxial planar technology with snapback-triggered TVS operation, enabling low clamping voltage and fast response to ESD transients. Its TLP-characterized dynamic resistance of 0.3 Ω (typ.) ensures effective energy shunting during ±20 kV discharges while maintaining signal integrity on high-speed lines.
Designed specifically for bidirectional protection of single-line I/Os, it operates within a 3.3 V system margin-VRWM ≤ 3.3 V, VH ≥ 3.5 V (typ.), and VC = 7.8 V (typ. @ IPP = 2.5 A)-and meets IEC61000-4-2 Level 4 without derating. The SL2 package supports reflow-compatible land patterns per Toshiba's reference dimensions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 3.3 V max - ensures safe operation on 3.3 V signal rails without leakage or false triggering |
| Ct | 0.6 pF typ. - preserves signal integrity up to 5 Gbps in USB 3.2/MIPI D-PHY applications |
| RDYN | 0.3 Ω typ. - minimizes voltage overshoot during ESD events by reducing IR drop across the device |
| VESD | ±20 kV (IEC61000-4-2 Contact) - exceeds industrial ESD immunity requirements for handheld devices |
| VC @ IPP=2.5A | 7.8 V typ. - clamps transient voltage below IC damage thresholds for 3.3 V interface receivers |
| Package | SL2 (0.62 mm × 0.32 mm) - enables placement adjacent to connectors or IC pads in ultra-dense mobile PCBs |
Pinout & Package
The DF2S5M5SL is housed in the SL2 ultra-compact surface-mount package (0.62 mm × 0.32 mm, 0.2 mg typical weight), optimized for automated placement and reflow soldering in high-volume mobile manufacturing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Protected line connection (anode-side referenced) | Connected to signal line requiring ESD protection; cathode orientation defines unidirectional clamp path |
| 2 (Anode) | Reference/ground return path | Tied to system ground or low-impedance return plane to complete ESD current path during snapback conduction |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables low VC (7.8 V) and stable conduction at high currents without thermal runaway |
| Sub-1 pF total capacitance | Minimizes insertion loss and reflection on >1 GHz differential pairs (e.g., USB 3.x, MIPI) |
| 0.3 Ω dynamic resistance | Reduces voltage overshoot during 2.5 A ESD pulses, protecting downstream 3.3 V logic inputs |
| SL2 footprint compatibility | Matches land pattern standards for 0201-size equivalents, enabling drop-in layout reuse |
Applications
| USB 3.2 Gen 1 Interface Protection | HDMI 2.0 TMDS Channel Protection |
|---|---|
Use Scenario: Protecting SuperSpeed USB data lanes (TX/RX) in smartphone docking circuits against repeated ESD contact events. IC Role / Device Role / Timing Role: Bidirectional TVS diode placed directly at USB connector, clamping transients before they reach the USB controller PHY. Use Value: 0.6 pF capacitance prevents signal degradation at 5 Gbps; ±20 kV ESD rating ensures compliance with IEC 61000-4-2 Level 4 in consumer handheld use cases. |
Use Scenario: Shielding HDMI 2.0 TMDS differential pairs in tablet display modules from ESD during cable insertion/removal. IC Role / Device Role / Timing Role: Single-line ESD suppressor per TMDS channel, mounted adjacent to HDMI receptacle to minimize stub length. Use Value: Low dynamic resistance (0.3 Ω) limits clamping overshoot to <8 V, preserving HDMI receiver input tolerance margins under 3.3 V supply. |
| MIPI D-PHY Camera Interface | Smartphone Touchscreen I²C Bus |
Use Scenario: Safeguarding high-speed MIPI D-PHY clock and data lanes connecting image sensors to AP SoCs in compact camera modules. IC Role / Device Role / Timing Role: ESD clamp on each D-PHY lane, leveraging ultra-low capacitance to avoid skew or jitter in 1.5 Gbps differential signaling. Use Value: 0.6 pF Ct ensures <0.5% signal attenuation at 1.5 GHz, meeting MIPI D-PHY v2.1 eye diagram requirements post-protection. |
Use Scenario: Protecting I²C SDA/SCL lines between touchscreen controller and application processor in narrow-bezel smartphone designs. IC Role / Device Role / Timing Role: Low-leakage (IR ≤ 0.1 µA) bidirectional ESD diode placed at touchscreen flex connector to prevent latch-up during handling. Use Value: VRWM ≤ 3.3 V guarantees no interference with 3.3 V I²C logic levels; ±20 kV rating covers factory and end-user ESD exposure scenarios. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR (Texas Instruments) | 0.8 pF Ct, 1.2 Ω RDYN, ±15 kV ESD rating, same SL2 package | Limited to lower-speed interfaces (<1 Gbps); higher clamping voltage (12 V @ 1 A) | Acceptable where ESD stress is ≤±15 kV and signal bandwidth is <500 MHz |
| ESD5Z3.3T5G (ON Semiconductor) | 0.5 pF Ct, 0.5 Ω RDYN, ±17 kV ESD rating, SOD-523 package (1.3 mm × 0.8 mm) | Larger footprint increases trace inductance; unsuitable for <0.8 mm pitch layouts | Preferred only when board area permits larger package and tighter capacitance spec is critical |
Compared with TPD2E001DRYR and ESD5Z3.3T5G, the DF2S5M5SL delivers superior ESD robustness (±20 kV), lowest dynamic resistance (0.3 Ω), and smallest footprint-making it optimal for next-gen mobile interfaces demanding both miniaturization and highest immunity.
Availability
DF2S5M5SL is available at Aetrix Electronics and suitable for smartphone front-panel interfaces, tablet USB-C port protection, and MIPI camera module designs requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for DF2S5M5SL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for consumer, industrial, and automotive applications, with expertise in power management, logic, memory, and protection devices.
The DF2S5M5SL belongs to Toshiba's SL-series ESD protection portfolio, engineered specifically for ultra-high-density mobile platforms where sub-1 pF capacitance, ±20 kV immunity, and 0.62 mm × 0.32 mm footprint are mandatory design constraints.
FAQ
What is the maximum working peak reverse voltage (VRWM) specified for the DF2S5M5SL?
The DF2S5M5SL has a maximum working peak reverse voltage (VRWM) of 3.3 V, ensuring compatibility with standard 3.3 V I/O systems without leakage or premature conduction. This rating is verified per IEC61000-4-2 test conditions and aligns with recommended operating conditions in Toshiba's official datasheet Rev.1.0.A. The DF2S5M5SL maintains stable reverse bias up to this voltage across its full temperature range.
Does the DF2S5M5SL support bidirectional ESD protection?
Yes, the DF2S5M5SL provides bidirectional ESD protection using snapback-triggered silicon epitaxial planar structure, enabling clamping for both positive and negative transients. Its symmetrical I-V characteristics-verified via TLP testing-allow direct placement on any single-ended signal line without polarity concerns. The DF2S5M5SL achieves ±20 kV immunity in both contact and air discharge modes per IEC61000-4-2.
What is the typical total capacitance (Ct) of the DF2S5M5SL and why does it matter?
The DF2S5M5SL exhibits a typical total capacitance (Ct) of 0.6 pF at 0 V and 1 MHz, with a maximum of 0.9 pF. This ultra-low value minimizes signal distortion on high-speed interfaces such as USB 3.2 Gen 1 and MIPI D-PHY, preserving eye diagram margins and reducing bit error rates. The DF2S5M5SL's capacitance is measured under standardized conditions and confirmed in Toshiba's Quick Reference Data table.
How does the dynamic resistance (RDYN) of the DF2S5M5SL affect ESD protection performance?
The DF2S5M5SL's typical dynamic resistance (RDYN) of 0.3 Ω-measured via TLP between 16 A and 30 A-directly determines voltage overshoot during ESD events: lower RDYN yields lower clamping voltage (VC = 7.8 V @ 2.5 A). This ensures protected ICs receive less stress, extending reliability in portable electronics. The DF2S5M5SL's RDYN is significantly lower than industry averages for SL2-packaged diodes.
Is the DF2S5M5SL compatible with lead-free reflow soldering processes?
Yes, the DF2S5M5SL is qualified for lead-free reflow soldering per JEDEC J-STD-020, supporting peak temperatures up to 260 °C. Its SL2 package construction and internal metallization are fully compatible with standard Pb-free assembly lines. Toshiba specifies land pattern dimensions and thermal profiles in the DF2S5M5SL datasheet Rev.1.0.A to ensure reliable solder joint formation without delamination or voiding.
DF2S5M5SL,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 2-SMD, No Lead
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 3.6V
- Voltage - Clamping (Max) @ Ipp:
- 16V (Typ)
- Current - Peak Pulse (10/1000µs):
- 2.5A (8/20µs)
- Power - Peak Pulse:
- 37W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.6pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SL2
DF2S5M5SL,L3F FAQ
1.How can I place an order for DF2S5M5SL,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2S5M5SL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2S5M5SL,L3F reliable?
The price and inventory of DF2S5M5SL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2S5M5SL,L3F is usually 5 days.
3.What payment methods are accepted for DF2S5M5SL,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2S5M5SL,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2S5M5SL,L3F?
DF2S5M5SL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2S5M5SL,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2S5M5SL,L3F?
For technical support, including DF2S5M5SL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2S5M5SL,L3F requirements.
6.How does Aetrix verify that DF2S5M5SL,L3F is sourced from the original manufacturer or authorized distributors?
All DF2S5M5SL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2S5M5SL,L3F meets industry standards.
7.What is the process for return or replacement of DF2S5M5SL,L3F?
All DF2S5M5SL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2S5M5SL,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2S5M5SL,L3F part is unused and in its original packaging.
Return procedure for DF2S5M5SL,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2S5M5SL,L3F Tags
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