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Toshiba Semiconductor and Storage DF2S6M4CT,L3F
- Part No.:
- DF2S6M4CT,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- SOD-882
- Datasheet:
-
DF2S6M4CT,L3F.pdf
- Description:
- TVS DIODE 5.5VWM 15VC CST2
- Quantity:
- Payment:
- Shipping:
Inventory:47,732
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Product details
Overview
DF2S6M4CT from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for high-speed signal lines in mobile interfaces, featuring ±20 kV IEC61000-4-2 contact/air ESD immunity, 0.35 pF typical capacitance, 0.3 Ω dynamic resistance, and a 5.5 V working peak reverse voltage. It safeguards USB, HDMI, and audio interfaces in smartphones and tablets.
For engineers reviewing the DF2S6M4CT datasheet, DF2S6M4CT pinout, DF2S6M4CT application, or DF2S6M4CT equivalent, key selection criteria include low-capacitance signal integrity preservation, snapback-based clamping performance under transient stress, and ultra-compact CST2 package compatibility with fine-pitch mobile PCB layouts.
Technical Context
The DF2S6M4CT employs silicon epitaxial planar technology with snapback-triggered TVS behavior to achieve low clamping voltage (9 V @ 2 A) and fast response to ESD transients. Its bidirectional dual-diode configuration protects differential or single-ended 5 V signal paths without DC bias dependency.
Designed specifically for I/O line protection-not voltage regulation-the device operates within a 5.5 V VRWM limit and delivers stable TLP-derived dynamic resistance (0.3 Ω typ.) across 8–16 A test currents, ensuring consistent noise suppression in high-frequency data lanes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 5.5 V - Sets maximum continuous signal swing before leakage rise; compatible with 5 V logic rails. |
| Total Capacitance | 0.35 pF (typ.) - Minimizes signal distortion on >1 Gbps interfaces like USB 3.x and MIPI D-PHY. |
| Dynamic Resistance | 0.3 Ω (typ.) - Ensures low-voltage overshoot during ESD events by limiting IR drop across protection path. |
| Clamp Voltage | 9 V @ 2 A (typ.) - Limits transient voltage seen by downstream ICs during IEC61000-4-2 8 kV contact discharge. |
| ESD Withstand | ±20 kV (IEC61000-4-2 Contact/Air) - Meets highest industrial ESD immunity class for handheld device ports. |
| Package Size | 1.0 mm × 0.6 mm - Enables placement adjacent to connectors in space-constrained mobile PCBs. |
Pinout & Package
The DF2S6M4CT is housed in the CST2 (0201 metric) ultra-compact surface-mount package, weighing 0.7 mg and optimized for automated placement in high-density mobile assemblies.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Common terminal for bidirectional ESD current shunting; connects to ground plane via shortest possible trace. |
| 2 | Anode | Signal-side terminal; placed directly in series with protected I/O line (e.g., USB D+, D−, or HDMI TMDS). |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables sub-10 V clamping at 2 A while maintaining low dynamic impedance-critical for preserving signal eye diagrams. |
| 0.35 pF capacitance | Reduces insertion loss and phase shift on GHz-range serial links, avoiding data-rate derating in high-speed interfaces. |
| ±20 kV ESD rating | Exceeds IEC61000-4-2 Level 4 requirements, eliminating need for secondary protection stages in consumer mobile designs. |
| CST2 footprint | Matches 0201 land pattern standards, enabling direct replacement of legacy ESD diodes without PCB redesign. |
Applications
| USB 2.0/3.x Interface Protection | HDMI/MHL Signal Line Protection |
|---|---|
Use Scenario: Protecting USB data lines (D+/D−) in smartphone charging ports against repeated plug/unplug ESD events. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed between connector and PHY IC. Use Value: 0.35 pF capacitance prevents signal integrity degradation at 480 Mbps (USB 2.0) and 5 Gbps (USB 3.1 Gen 1), while ±20 kV rating ensures field reliability. | Use Scenario: Shielding HDMI TMDS clock and data channels in tablet display modules from handling-induced discharges. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on each differential pair, mounted adjacent to HDMI receptacle. Use Value: 9 V clamping voltage at 2 A limits stress on HDMI receiver input stages, preventing latch-up or parametric shift during compliance testing. |
| Mobile Audio Jack Protection | MIPI D-PHY Camera Interface |
Use Scenario: Safeguarding 3.5 mm audio jack microphone and headset detection lines in notebooks against user-contact ESD. IC Role / Device Role / Timing Role: Single-line ESD protector on biased analog sense lines with minimal leakage impact. Use Value: 5.5 V VRWM aligns with typical audio codec bias voltages; 0.1 µA max reverse current avoids DC offset errors in sensitive analog paths. | Use Scenario: Protecting MIPI D-PHY differential pairs connecting image sensor to application processor in smartphone rear camera modules. IC Role / Device Role / Timing Role: High-speed ESD suppressor placed at sensor flex cable entry point to minimize stub length. Use Value: 0.3 Ω dynamic resistance ensures <1 ns response time, containing ESD energy before it couples into high-gain analog front-end circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF capacitance, 12 V clamping @ 1 A, SOT-5X3 package (1.6 × 1.6 mm) | Larger footprint; higher capacitance limits use to ≤480 Mbps interfaces | Select when board space allows larger package and lower-cost procurement is prioritized over GHz signal fidelity. |
| ESD5Z3.3T5G | 3.3 V VRWM, 0.65 pF capacitance, 1.0 × 0.6 mm package | Lower working voltage restricts use to 3.3 V I/O; higher capacitance affects 1+ Gbps links | Choose only for 3.3 V logic domains where tighter VRWM margin is required and speed is secondary. |
Compared with TPD2E001DRYR and ESD5Z3.3T5G, the DF2S6M4CT uniquely balances ultra-low capacitance (0.35 pF), 5.5 V VRWM headroom, and CST2 footprint-making it optimal for next-generation mobile interfaces operating above 1 Gbps where signal integrity and board area are co-constrained.
Availability
DF2S6M4CT is available at Aetrix Electronics and suitable for smartphone interface protection, tablet USB-C port hardening, and notebook HDMI ESD mitigation requiring stable component supply across high-volume production cycles.
Supply support for DF2S6M4CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer efficiency and reliability.
The DF2S6M4CT belongs to Toshiba's CST2-series ESD protection portfolio, engineered specifically for high-density mobile electronics where minimal parasitic capacitance and sub-millimeter footprint are mandatory design constraints.
FAQ
What is the maximum working voltage supported by the DF2S6M4CT?
The DF2S6M4CT has a working peak reverse voltage (VRWM) of 5.5 V, meaning it is rated for continuous operation on 5 V signal lines with margin for ripple and noise. This makes it suitable for standard USB, HDMI, and other 5 V I/O interfaces. Exceeding 5.5 V risks increased reverse leakage and premature breakdown. The DF2S6M4CT must not be used in circuits where steady-state reverse voltage exceeds this limit.
Does the DF2S6M4CT support bidirectional ESD protection?
Yes, the DF2S6M4CT provides symmetrical bidirectional protection due to its dual-diode configuration in series opposition. It clamps positive and negative transients equally-verified by ±20 kV IEC61000-4-2 contact and air discharge ratings. This enables single-device protection of AC-coupled or differential signal lines such as USB D+/D− or HDMI TMDS pairs without polarity concerns. The DF2S6M4CT achieves this without external bias components.
What is the significance of the DF2S6M4CT's 0.35 pF capacitance value?
The DF2S6M4CT's typical total capacitance of 0.35 pF minimizes loading on high-speed signal paths, preserving signal integrity up to multi-Gbps data rates. At 1 GHz, this adds only ~450 Ω capacitive reactance-negligible versus characteristic impedance-so eye diagrams remain open and jitter stays low. This value is measured at 0 V and 1 MHz per datasheet, and the DF2S6M4CT maintains low capacitance across its operating voltage range.
Can the DF2S6M4CT replace older ESD diodes in existing 0201 footprints?
Yes, the DF2S6M4CT uses the standardized CST2 package (1.0 mm × 0.6 mm), which matches JEDEC 0201 land patterns. Its pinout-Pin 1 (cathode) and Pin 2 (anode)-is consistent with industry-standard bidirectional ESD diodes in this size. No PCB layout change is needed when upgrading from functionally similar 0201 ESD protectors, provided VRWM, capacitance, and clamping requirements align. The DF2S6M4CT delivers improved performance within the same footprint.
How does the DF2S6M4CT's snapback behavior improve protection performance?
The DF2S6M4CT uses snapback-triggered avalanche conduction to achieve low dynamic resistance (0.3 Ω typ.) and tight clamping (9 V @ 2 A), reducing voltage overshoot during fast ESD pulses. Unlike traditional Zener-like clamping, snapback sustains low impedance after triggering, dissipating energy more efficiently and protecting sensitive downstream ICs. This behavior is intrinsic to its silicon epitaxial planar structure and is fully characterized in the DF2S6M4CT's TLP curves.
DF2S6M4CT,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- SOD-882
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 5.6V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- 30W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 0.35pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST2
DF2S6M4CT,L3F FAQ
1.How can I place an order for DF2S6M4CT,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2S6M4CT,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2S6M4CT,L3F reliable?
The price and inventory of DF2S6M4CT,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2S6M4CT,L3F is usually 5 days.
3.What payment methods are accepted for DF2S6M4CT,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2S6M4CT,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2S6M4CT,L3F?
DF2S6M4CT,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2S6M4CT,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2S6M4CT,L3F?
For technical support, including DF2S6M4CT,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2S6M4CT,L3F requirements.
6.How does Aetrix verify that DF2S6M4CT,L3F is sourced from the original manufacturer or authorized distributors?
All DF2S6M4CT,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2S6M4CT,L3F meets industry standards.
7.What is the process for return or replacement of DF2S6M4CT,L3F?
All DF2S6M4CT,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2S6M4CT,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2S6M4CT,L3F part is unused and in its original packaging.
Return procedure for DF2S6M4CT,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2S6M4CT,L3F Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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