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Toshiba Semiconductor and Storage DF2S6M4SL,L3F

Part No.:
DF2S6M4SL,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Category:
TVS Diodes
Package:
2-SMD, No Lead
Datasheet:
AetrixDF2S6M4SL,L3F.pdf
Description:
TVS DIODE 5.5VWM 15VC SL2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:41,091

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Product details

Overview

DF2S6M4SL,L3F from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for high-speed signal lines in mobile interfaces, featuring ±20 kV IEC61000-4-2 contact/air ESD immunity, 0.35 pF typical capacitance, 0.3 Ω dynamic resistance, and a 5.5 V working peak reverse voltage. It protects ICs in smartphones, tablets, and notebook PCs against electrostatic discharge and noise.

For engineers reviewing the DF2S6M4SL,L3F datasheet, DF2S6M4SL,L3F pinout, DF2S6M4SL,L3F application, or DF2S6M4SL,L3F equivalent, key selection criteria include low clamping voltage (9 V @ 2 A), ultra-compact SL2 package (0.62 mm × 0.32 mm), snapback behavior, and suitability for 5 V signal rails with minimal signal distortion.

Technical Context

The DF2S6M4SL,L3F employs silicon epitaxial planar technology with snapback-triggered clamping to achieve low dynamic resistance (0.3 Ω typ.) and low clamping voltage (9 V @ 2 A). Its operation relies on controlled avalanche breakdown and snapback transition to divert ESD transients while maintaining signal integrity.

Designed specifically for high-speed data lines, it delivers 0.35 pF typical capacitance at 0 V and supports bidirectional protection with symmetrical IEC61000-4-2 ±20 kV performance. The device operates within a 5.5 V VRWM limit and exhibits stable reverse leakage (<0.1 µA) at rated voltage.

Key Specifications

ParameterValue and Actual Design Meaning
VRWM5.5 V - Maximum continuous reverse voltage before leakage exceeds specification; sets upper limit for 5 V rail compatibility.
Ct0.35 pF (typ.) - Enables use on USB 2.0, HDMI, MIPI, and other >100 MHz signal paths without signal degradation.
RDYN0.3 Ω (typ.) - Low impedance during ESD event ensures rapid energy shunting and minimizes voltage overshoot at protected node.
VESD±20 kV (IEC61000-4-2 Contact/Air) - Meets highest industrial ESD immunity requirement for handheld consumer electronics.
VC @ IPP=2 A9 V (typ.) - Clamping voltage level that determines maximum stress imposed on downstream IC during 2 A transient.
PackageSL2 (0.62 mm × 0.32 mm) - Ultra-small footprint enables placement directly at connector or IC pad for shortest possible protection path.

Pinout & Package

DF2S6M4SL,L3F is housed in the SL2 ultra-compact surface-mount package (0.62 mm × 0.32 mm, 0.2 mg typical weight), optimized for high-density PCB layouts in space-constrained mobile devices.

Pin/TerminalCircuit RoleDesign Meaning
1 (Cathode)Protected line connection (anode of internal ESD clamp)Connected to signal line requiring protection; forms cathode side of bidirectional TVS structure.
2 (Anode)Protected line connection (cathode of internal ESD clamp)Connected to same signal line as Pin 1; completes symmetrical bidirectional clamping path between pins.

Key Features

FeatureDesign Value
Snapback-triggered clampingEnables low clamping voltage (9 V @ 2 A) and fast response without sacrificing leakage or capacitance.
Bidirectional ESD protectionSupports ±20 kV IEC61000-4-2 immunity on single-line configurations without polarity constraints.
Ultra-low capacitance0.35 pF typical ensures minimal loading on high-speed differential or single-ended data lines (e.g., USB, MIPI D-PHY).
Low dynamic resistance0.3 Ω typical provides efficient current diversion during ESD events, reducing voltage overshoot at protected IC inputs.

Applications

Smartphone Interface ProtectionTablet USB Port Protection

Use Scenario: Protecting micro-USB or USB-C data lines (D+/D−) from user-handling ESD in compact smartphone designs.

IC Role / Device Role / Timing Role: Bidirectional TVS diode placed adjacent to connector to clamp transients before reaching baseband or application processor IO.

Use Value: 0.35 pF capacitance avoids signal integrity loss on 480 Mbps USB 2.0 links; ±20 kV rating covers worst-case human-body-model exposure.

Use Scenario: Shielding high-speed MIPI D-PHY lanes connecting display panel to SoC in thin tablet form factors.

IC Role / Device Role / Timing Role: Low-capacitance ESD suppressor mounted at display flex interface to prevent latch-up or damage during assembly or field use.

Use Value: 0.62 mm × 0.32 mm SL2 package fits within tight routing channels near display connectors without compromising layout density.

Notebook PC Touchpad InterfaceDesktop PC Audio Jack ESD Guard

Use Scenario: Safeguarding I²C-based touchpad controller signals (SDA/SCL) from ESD during user interaction with palm rest area.

IC Role / Device Role / Timing Role: Two-channel ESD protection (using dual-device configuration) on low-voltage, low-current I²C bus lines.

Use Value: 5.5 V VRWM aligns with 3.3 V or 5 V I²C supply rails; sub-1 V clamping margin prevents controller input overvoltage.

Use Scenario: Preventing ESD-induced pop-noise or codec damage on 3.5 mm audio jack microphone and headphone lines.

IC Role / Device Role / Timing Role: Single-line bidirectional protector on unbalanced analog audio paths where low capacitance preserves frequency response.

Use Value: 0.35 pF capacitance avoids high-frequency roll-off above 20 kHz; ±20 kV rating exceeds EN 61000-4-2 Level 4 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TPD2E001DRYR0.8 pF capacitance (vs. 0.35 pF); ±8 kV IEC61000-4-2 (vs. ±20 kV); SOT-553 package (1.6 mm × 1.6 mm)Higher capacitance limits use to lower-speed interfaces (e.g., I²C, UART); lower ESD rating suits less demanding environments.Select when board space allows larger package and system-level ESD testing confirms ±8 kV sufficiency.
ESD56081D050.5 pF capacitance; ±30 kV IEC61000-4-2; 0.6 mm × 0.3 mm DFN package (slightly smaller footprint)Higher ESD rating enables use in ruggedized industrial handhelds; marginally higher capacitance may affect >500 Mbps links.Prefer for next-gen portable devices requiring extended ESD margin without increasing board area.

Compared with TPD2E001DRYR and ESD56081D05, the DF2S6M4SL,L3F delivers the lowest capacitance among ultra-compact ESD diodes with full ±20 kV compliance-making it optimal for high-speed mobile data interfaces where signal fidelity and space are simultaneously constrained.

Availability

DF2S6M4SL,L3F is available at Aetrix Electronics and suitable for smartphone interface protection, tablet USB port hardening, and notebook PC touchpad I²C safeguarding requiring stable component supply across high-volume consumer electronics production cycles.

Supply support for DF2S6M4SL,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, miniaturization, and application-specific optimization.

The DF2S6M4SL,L3F belongs to Toshiba's SL-series ESD protection portfolio, engineered specifically for ultra-compact, high-speed signal line protection in battery-powered mobile equipment.

FAQ

What is the maximum working voltage supported by the DF2S6M4SL,L3F?

The DF2S6M4SL,L3F has a working peak reverse voltage (VRWM) of 5.5 V, making it suitable for protecting 5 V signal lines such as USB 2.0, HDMI CEC, and other general-purpose digital interfaces. Operation above this voltage risks excessive leakage or premature clamping, so it must be applied only within its specified 5.5 V DC or peak AC rating.

Does the DF2S6M4SL,L3F support bidirectional ESD protection?

Yes, the DF2S6M4SL,L3F provides symmetrical bidirectional protection with ±20 kV IEC61000-4-2 contact and air discharge ratings. Its internal structure connects Pins 1 and 2 as complementary terminals of a single snapback diode pair, enabling equal clamping performance regardless of transient polarity-ideal for single-line data paths like I²C clock or reset lines.

What is the typical capacitance of the DF2S6M4SL,L3F and why does it matter?

The DF2S6M4SL,L3F exhibits 0.35 pF typical total capacitance at 0 V, measured at 1 MHz. This ultra-low value minimizes signal attenuation and phase shift on high-speed lines-critical for maintaining eye diagram integrity in USB 2.0 (480 Mbps), MIPI D-PHY, and other >100 MHz interfaces where even 0.5 pF can degrade timing margins.

How does the snapback characteristic improve ESD protection in the DF2S6M4SL,L3F?

The snapback behavior in the DF2S6M4SL,L3F reduces dynamic resistance to 0.3 Ω (typ.) after triggering, enabling faster current diversion and lower clamping voltage (9 V @ 2 A) than conventional Zener-based TVS devices. This results in reduced stress on protected ICs during fast-rising ESD events, improving system-level robustness without increasing capacitance or leakage.

What package type is used for the DF2S6M4SL,L3F and what are its dimensions?

The DF2S6M4SL,L3F uses the SL2 package-a Toshiba-proprietary ultra-compact leadless chip-scale package measuring 0.62 mm × 0.32 mm with a typical weight of 0.2 mg. Its small size supports placement directly at connectors or IC pads, minimizing inductance in the protection path and maximizing effectiveness against high-frequency ESD transients.

DF2S6M4SL,L3F Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Package/Case:
2-SMD, No Lead
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
5.5V (Max)
Voltage - Breakdown (Min):
5.6V
Voltage - Clamping (Max) @ Ipp:
15V
Current - Peak Pulse (10/1000µs):
2A
Power - Peak Pulse:
30W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
0.35pF @ 1MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SL2

DF2S6M4SL,L3F FAQ

1.How can I place an order for DF2S6M4SL,L3F through Aetrix?

Please submit a Request for Quotation (RFQ) for DF2S6M4SL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DF2S6M4SL,L3F reliable?

The price and inventory of DF2S6M4SL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2S6M4SL,L3F is usually 5 days.

3.What payment methods are accepted for DF2S6M4SL,L3F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2S6M4SL,L3F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DF2S6M4SL,L3F?

DF2S6M4SL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DF2S6M4SL,L3F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DF2S6M4SL,L3F?

For technical support, including DF2S6M4SL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2S6M4SL,L3F requirements.

6.How does Aetrix verify that DF2S6M4SL,L3F is sourced from the original manufacturer or authorized distributors?

All DF2S6M4SL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2S6M4SL,L3F meets industry standards.

7.What is the process for return or replacement of DF2S6M4SL,L3F?

All DF2S6M4SL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2S6M4SL,L3F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DF2S6M4SL,L3F part is unused and in its original packaging.

Return procedure for DF2S6M4SL,L3F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DF2S6M4SL,L3F Tags

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