My Inquiry
My Account
Toshiba Semiconductor and Storage DF2S6P2CTC,L3F
- Part No.:
- DF2S6P2CTC,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 2-SMD, No Lead
- Datasheet:
-
DF2S6P2CTC,L3F.pdf
- Description:
- TVS DIODE 5.5VWM CST2C
- Quantity:
- Payment:
- Shipping:
Inventory:32,980
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DF2S6P2CTC from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for signal-line transient suppression in mobile device interfaces. It features a working peak reverse voltage of 5.5 V, ±30 kV IEC61000-4-2 contact ESD rating, 0.08 Ω typical dynamic resistance, 18 V clamping voltage at 80 A peak pulse current, and ultra-compact CST2C (1.6 mm × 0.8 mm) packaging - enabling robust protection in space-constrained smartphone and tablet USB/USB-C, HDMI, and audio jack circuits.
For engineers reviewing the DF2S6P2CTC datasheet, DF2S6P2CTC pinout, DF2S6P2CTC application, or DF2S6P2CTC equivalent, key selection criteria include its snapback-triggered low-clamp behavior, 600 pF total capacitance at 0 V, compatibility with 5.0 V signal rails, and suitability for high-density PCB layouts where ESD immunity and minimal signal distortion are critical.
Technical Context
The DF2S6P2CTC employs a silicon epitaxial planar structure with snapback characteristics to achieve low clamping voltage (18 V typ. @ 80 A) while maintaining high ESD robustness (±30 kV contact). Its dynamic resistance of 0.08 Ω (typ.) ensures rapid energy shunting during transients, minimizing voltage overshoot on protected lines.
Designed specifically for IEC61000-4-2 ESD and IEC61000-4-5 surge (8/20 µs) compliance, it operates within a 5.5 V working peak reverse voltage range and delivers 1900 W peak pulse power handling - targeting interface protection where low capacitance (600 pF) and fast response are required without compromising signal integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 5.5 V maximum - defines safe operating reverse bias for 5.0 V signal lines without leakage-induced logic errors |
| VESD (IEC61000-4-2) | ±30 kV contact - exceeds industrial ESD immunity requirements for handheld device ports |
| VC @ IPP = 80 A | 18 V typical - clamps transient voltage below IC damage thresholds during lightning-induced surges |
| RDYN | 0.08 Ω typical - enables fast, low-loss current diversion to ground during nanosecond-scale ESD events |
| Ct @ 0 V | 600 pF - balances ESD protection strength with minimal signal attenuation on high-speed interfaces |
| Package | CST2C (1.6 mm × 0.8 mm) - supports fine-pitch routing and high-density placement in smartphones and tablets |
Pinout & Package
The DF2S6P2CTC is housed in the ultra-compact CST2C surface-mount package (1.6 mm × 0.8 mm, 1.5 mg typical weight), optimized for mobile PCB real estate constraints. Pin 1 is Cathode; Pin 2 is Anode - configured as a bidirectional TVS diode for symmetric ESD protection across differential or single-ended lines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Protected line connection (cathode side) | Connected to signal line being protected; forms snapback conduction path to ground during overvoltage |
| 2 (Anode) | Ground reference terminal | Provides low-impedance return path to system ground; must be routed with minimal inductance for effective clamping |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables 18 V VC at 80 A while maintaining low dynamic resistance (0.08 Ω) for minimal overshoot |
| IEC61000-4-2 ±30 kV contact rating | Guarantees survivability against worst-case human-body ESD events in consumer portable devices |
| 600 pF total capacitance | Preserves signal integrity on 5.0 V interfaces like USB 2.0, audio codecs, and display data lanes |
| CST2C footprint (1.6 mm × 0.8 mm) | Reduces board area by >40% vs. standard SOD-323, enabling tighter layout around connectors |
Applications
| Smartphone USB-C Port Protection | Tablet HDMI Interface Protection |
|---|---|
Use Scenario: Protecting USB-C receptacle pins (CC, SBU, D+/D−) from repeated ESD events during cable insertion/removal in consumer smartphones. IC Role / Device Role / Timing Role: Bidirectional TVS diode placed directly at connector, clamping transients before they reach USB controller IC. Use Value: Prevents latch-up or gate oxide damage in USB PHY with ±30 kV ESD immunity and 600 pF loading that avoids signal eye degradation. |
Use Scenario: Shielding HDMI 1.4/2.0 TMDS channels and CEC line from ESD in thin-profile tablets exposed to frequent handling. IC Role / Device Role / Timing Role: Low-capacitance ESD suppressor mounted adjacent to HDMI connector, providing snapback clamping without degrading 3.4 Gbps data rates. Use Value: Maintains HDMI compliance via 600 pF capacitance and 18 V clamping, preventing pixel corruption or hot-plug detection failure. |
| Notebook PC Audio Jack Protection | Mobile Device SIM Card Slot Protection |
Use Scenario: Guarding 3.5 mm audio jack contacts (MIC, HP_L/R, GND) against ESD in clamshell notebooks with exposed front-panel jacks. IC Role / Device Role / Timing Role: Dual-rail ESD protector (anode-cathode pair) integrated into jack PCB footprint, shunting discharge to chassis ground. Use Value: Eliminates pop/click artifacts and codec latch-up using 5.5 V VRWM alignment with audio bias rails and 0.08 Ω RDYN for sub-1 ns response. |
Use Scenario: Securing 6-pin SIM card slot contacts (VCC, I/O, CLK, RST, GND) against ESD during user-insertion in LTE-enabled smartphones. IC Role / Device Role / Timing Role: Discrete bidirectional TVS per signal line, placed within 2 mm of SIM connector to minimize trace inductance. Use Value: Ensures SIM detection reliability and prevents eSIM controller reset via ±30 kV immunity and 18 V clamping below IC absolute max ratings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR (Texas Instruments) | Lower capacitance (12 pF), lower ESD rating (±8 kV contact), 5.5 V VRWM, SOT-553 package (2.0 mm × 1.25 mm) | Better suited for high-speed USB 3.0/PCIe; insufficient for ±30 kV environments like consumer handhelds | Select when ultra-low capacitance outweighs ESD robustness; not drop-in due to larger footprint and lower surge capability |
| ESD9X5.0ST5G (ON Semiconductor) | Same 5.5 V VRWM, ±30 kV ESD, but higher clamping (24 V @ 80 A), 0.12 Ω RDYN, SOD-923 package (1.0 mm × 0.6 mm) | Smaller footprint but higher VC compromises protection margin for 5 V tolerant ICs | Choose for space-constrained designs accepting higher clamping; verify downstream IC VIO derating with 24 V VC |
Compared with TPD2E001DRYR and ESD9X5.0ST5G, the DF2S6P2CTC uniquely balances ±30 kV ESD immunity, 18 V clamping, and 600 pF capacitance in the CST2C footprint - making it optimal for mid-speed 5 V interfaces in smartphones and tablets where both robustness and signal fidelity are non-negotiable.
Availability
DF2S6P2CTC is available at Aetrix Electronics and suitable for smartphone USB-C port protection, tablet HDMI interface protection, notebook PC audio jack protection, mobile device SIM card slot protection, and other ESD-critical consumer electronics requiring stable component supply and long-term lifecycle support.
Supply support for DF2S6P2CTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, miniaturization, and application-specific performance.
The DF2S6P2CTC belongs to Toshiba's ESD protection diode product line, engineered specifically for high-density mobile interfaces requiring certified ±30 kV IEC61000-4-2 immunity and low-clamp snapback behavior in sub-2 mm² packages.
FAQ
What is the maximum working peak reverse voltage (VRWM) specification for DF2S6P2CTC?
The DF2S6P2CTC has a maximum working peak reverse voltage (VRWM) of 5.5 V, meaning it can safely block up to 5.5 V in reverse bias during normal operation without significant leakage current - making it compatible with standard 5.0 V signal rails in smartphones and tablets. This value is confirmed in Toshiba's official datasheet Rev.3.0 under "Electrical Characteristics" and is critical for ensuring no false triggering during nominal voltage conditions. The DF2S6P2CTC maintains low IR (<0.1 µA) at this VRWM level.
Does DF2S6P2CTC meet IEC61000-4-2 ESD immunity standards?
Yes, the DF2S6P2CTC is rated for ±30 kV electrostatic discharge immunity per IEC61000-4-2 (contact discharge), as verified in Toshiba's datasheet Section 6 and Absolute Maximum Ratings Table. This exceeds Level 4 requirements and ensures reliable protection for handheld consumer devices subjected to repeated human-body ESD events. The DF2S6P2CTC achieves this with snapback-triggered conduction and low dynamic resistance (0.08 Ω), not just passive clamping.
What is the clamping voltage (VC) of DF2S6P2CTC at 80 A peak pulse current?
The DF2S6P2CTC exhibits a typical clamping voltage (VC) of 18 V at 80 A peak pulse current (IPP), measured under IEC61000-4-5 8/20 µs surge conditions. This value is specified in Toshiba's datasheet Section 6.3 and Electrical Characteristics Table. The DF2S6P2CTC achieves this low VC through snapback characteristics and low dynamic resistance, protecting downstream 5 V-tolerant ICs from overvoltage stress during indirect lightning or power-rail transients.
What package type does DF2S6P2CTC use, and what are its dimensions?
The DF2S6P2CTC uses the CST2C package - an ultra-compact surface-mount case measuring 1.6 mm × 0.8 mm with a typical weight of 1.5 mg. This package is explicitly named in Toshiba's datasheet Section "Package Dimensions" and "Packaging", and its land pattern is provided in Figure 12. The DF2S6P2CTC's CST2C footprint enables high-density placement near connectors in space-constrained mobile PCBs, outperforming larger alternatives like SOD-323 or SOT-553 in area efficiency.
How does the dynamic resistance (RDYN) of DF2S6P2CTC affect its ESD protection performance?
The DF2S6P2CTC has a typical dynamic resistance (RDYN) of 0.08 Ω, measured using TLP with least-squares fitting between 16 A and 30 A (per datasheet Note 2). This ultra-low RDYN enables rapid, low-loss current shunting during ESD events - minimizing voltage overshoot and reducing thermal stress on the diode itself. As a result, the DF2S6P2CTC sustains repeated ±30 kV discharges without degradation, unlike higher-RDYN alternatives that exhibit higher clamping or premature failure.
DF2S6P2CTC,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 2-SMD, No Lead
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 5.6V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- 80A
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- USB
- Capacitance @ Frequency:
- 600pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST2C
DF2S6P2CTC,L3F FAQ
1.How can I place an order for DF2S6P2CTC,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2S6P2CTC,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2S6P2CTC,L3F reliable?
The price and inventory of DF2S6P2CTC,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2S6P2CTC,L3F is usually 5 days.
3.What payment methods are accepted for DF2S6P2CTC,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2S6P2CTC,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2S6P2CTC,L3F?
DF2S6P2CTC,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2S6P2CTC,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2S6P2CTC,L3F?
For technical support, including DF2S6P2CTC,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2S6P2CTC,L3F requirements.
6.How does Aetrix verify that DF2S6P2CTC,L3F is sourced from the original manufacturer or authorized distributors?
All DF2S6P2CTC,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2S6P2CTC,L3F meets industry standards.
7.What is the process for return or replacement of DF2S6P2CTC,L3F?
All DF2S6P2CTC,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2S6P2CTC,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2S6P2CTC,L3F part is unused and in its original packaging.
Return procedure for DF2S6P2CTC,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2S6P2CTC,L3F Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
