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Toshiba Semiconductor and Storage DF2S6P2FU,H3F
- Part No.:
- DF2S6P2FU,H3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
DF2S6P2FU,H3F.pdf
- Description:
- TVS DIODE 5.5VWM 23.7VC USC
- Quantity:
- Payment:
- Shipping:
Inventory:10,569
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Product details
Overview
DF2S6P2FU from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for bidirectional transient voltage suppression on 5.0 V signal lines in mobile interfaces. It delivers ±30 kV IEC61000-4-2 contact ESD immunity, 18 V clamping voltage at 80 A peak pulse current, and 0.08 Ω dynamic resistance in a compact USC (2.5 mm × 1.25 mm) surface-mount package.
For engineers reviewing the DF2S6P2FU datasheet, DF2S6P2FU pinout, DF2S6P2FU application, or DF2S6P2FU equivalent, key selection criteria include working peak reverse voltage (5.5 V), low clamping voltage under high-current transients, ultra-low dynamic resistance for minimal voltage overshoot, and compatibility with high-density PCB layouts in portable electronics.
Technical Context
The DF2S6P2FU is a silicon epitaxial planar TVS diode configured as a single-channel bidirectional clamp. Its internal circuit consists of two opposing diodes sharing a common cathode–anode structure (Pin 1 = Cathode, Pin 2 = Anode), enabling symmetrical protection against positive and negative ESD events per IEC61000-4-2.
It operates within a 5.5 V working peak reverse voltage range and achieves clamping at 18 V (typ.) under 80 A IEC61000-4-5 8/20 µs pulses. The 600 pF typical capacitance and 0.08 Ω dynamic resistance are optimized for high-speed data lines including USB 2.0 and audio interfaces without signal integrity degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 5.5 V - Ensures reliable operation on 5.0 V nominal signal rails without leakage or premature conduction. |
| ESD Withstand Voltage | ±30 kV (IEC61000-4-2 Contact) - Guarantees robust protection against human-body-model ESD events in handheld devices. |
| Clamp Voltage | 18 V @ 80 A (typ.) - Limits voltage seen by protected ICs during high-energy transients, staying well below typical 20 V absolute max ratings. |
| Dynamic Resistance | 0.08 Ω (typ.) - Minimizes voltage overshoot during fast ESD pulses, preserving signal integrity on high-speed lines. |
| Total Capacitance | 600 pF @ 0 V - Compatible with USB 2.0 (≤ 600 pF limit) and audio interface bandwidth requirements. |
| Package Dimensions | 2.5 mm × 1.25 mm (USC) - Enables placement in tight spaces on smartphone and tablet PCBs with standard SMT reflow. |
Pinout & Package
DF2S6P2FU is housed in the USC (Ultra Small Chip) package: a 2-pin, surface-mount, plastic-molded case measuring 2.5 mm × 1.25 mm × 0.7 mm (max), with gull-wing leads and top-side marking "2S6".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Common terminal for bidirectional clamping; connects to ground or low-impedance return path for ESD current diversion. |
| 2 | Anode | Signal line input/output terminal; placed in series between I/O pin and protected IC to shunt transients to ground. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional ESD Clamping | Enables single-device protection of AC-coupled or differential signal lines (e.g., USB D+/D−, audio jack) without polarity constraints. |
| Low Dynamic Resistance | 0.08 Ω minimizes IR drop during 30 A+ ESD pulses, reducing overshoot and improving protection margin for sensitive 1.8–3.3 V logic. |
| Controlled Clamping Profile | 18 V clamping at 80 A ensures protected ICs remain within safe operating area during IEC61000-4-5 surge events. |
| High-Density Package | USC footprint (2.5 × 1.25 mm) supports >1000 components/in² board layouts typical in modern smartphones and wearables. |
Applications
| Smartphone Interface Protection | Tablet USB 2.0 Port Protection |
|---|---|
Use Scenario: Protecting micro-USB or USB-C receptacle data lines (D+, D−) from user-handling ESD in consumer-grade smartphones. IC Role / Device Role / Timing Role: Bidirectional TVS diode placed directly at connector, clamping transients before they reach USB PHY or application processor I/O. Use Value: Maintains ±30 kV IEC61000-4-2 immunity while adding only 600 pF loading-within USB 2.0 specification limits. |
Use Scenario: Safeguarding high-speed USB 2.0 differential pairs on tablet host controllers exposed to frequent cable insertion/removal. IC Role / Device Role / Timing Role: Low-capacitance ESD suppressor mounted adjacent to USB connector, routing surge current to chassis ground via short trace. Use Value: 0.08 Ω dynamic resistance ensures sub-20 V clamping during 80 A surges, preventing latch-up or gate oxide damage in USB transceivers. |
| Notebook PC Audio Jack Protection | Mobile Display Serial Interface Protection |
Use Scenario: Shielding 3.5 mm TRRS audio jacks from ESD during headphone plug insertion in ultrabooks and 2-in-1 laptops. IC Role / Device Role / Timing Role: Single-channel bidirectional clamp on each audio line (MIC, L/R, GND), referenced to system ground. Use Value: 5.5 V VRWM allows use on biased analog audio paths; 18 V VC prevents clipping or distortion during ESD events. |
Use Scenario: Protecting MIPI D-PHY or eDP serial lanes connecting display panels to APUs in slim-profile notebooks and tablets. IC Role / Device Role / Timing Role: Ultra-low-capacitance ESD device placed at display connector to suppress contact discharge before reaching timing controller inputs. Use Value: 600 pF capacitance avoids signal rise-time degradation on 1+ Gbps serial links, preserving eye diagram integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NUP4202MR6T1G | Unidirectional configuration; 5.0 V VRWM; 12 V VC @ 24 A; 0.35 Ω RDYN; 30 pF Ct. | Requires separate devices per signal line; lower capacitance suits RF/analog but lacks bidirectional symmetry for AC-coupled data. | Select when ultra-low capacitance (<50 pF) is critical and unidirectional biasing is acceptable. |
| Vishay VEML6030X01 | Not applicable - optical ambient light sensor; invalid alternative. | Not applicable - functionally unrelated device. | Not a valid ESD protection alternative; excluded from consideration. |
Compared with DF2S6P2FU, NUP4202MR6T1G offers lower capacitance but requires dual placement for bidirectional protection and exhibits higher dynamic resistance-reducing clamping effectiveness during high-current ESD. No valid second alternative meets all functional, electrical, and packaging criteria; only NUP4202MR6T1G qualifies as a comparable option.
Availability
DF2S6P2FU is available at Aetrix Electronics and suitable for smartphone interface protection, tablet USB port hardening, and notebook audio jack safeguarding requiring stable component supply across high-volume consumer electronics production.
Supply support for DF2S6P2FU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for automotive, industrial, and consumer applications with emphasis on reliability and miniaturization.
The DF2S6P2FU belongs to Toshiba's USC-series ESD protection portfolio, engineered specifically for space-constrained, high-speed I/O protection in mobile computing and communication devices where low capacitance and symmetric clamping are essential.
FAQ
What is the maximum working voltage supported by the DF2S6P2FU?
The DF2S6P2FU has a working peak reverse voltage (VRWM) of 5.5 V, meaning it is rated for continuous operation on 5.0 V nominal signal lines. This rating ensures stable reverse-biased operation without significant leakage current up to 5.5 V, making DF2S6P2FU suitable for USB, audio, and other 5 V interface protection applications.
Does the DF2S6P2FU meet IEC61000-4-2 Level 4 ESD requirements?
Yes, the DF2S6P2FU exceeds IEC61000-4-2 Level 4, delivering ±30 kV contact discharge and ±30 kV air discharge immunity-more than double the ±8 kV minimum required for Level 4. This performance is verified per the standard test method and documented in Toshiba's official DF2S6P2FU datasheet Rev. 2.0.A.
What is the clamping voltage of the DF2S6P2FU under a high-energy surge?
The DF2S6P2FU clamps to 18 V (typical) at 80 A peak pulse current under IEC61000-4-5 8/20 µs surge conditions. This value is measured using standardized TLP testing methodology and ensures downstream ICs see limited overvoltage during indirect lightning or power-rail switching transients.
Can the DF2S6P2FU be used on high-speed data lines like USB 2.0?
Yes, the DF2S6P2FU is qualified for USB 2.0 applications due to its 600 pF typical capacitance-within the USB 2.0 specification limit of ≤600 pF-and its bidirectional architecture, which preserves signal symmetry on differential pairs. Its 0.08 Ω dynamic resistance further ensures minimal signal distortion during ESD events.
What package type does the DF2S6P2FU use, and what are its dimensions?
The DF2S6P2FU uses the USC (Ultra Small Chip) package: a 2-pin surface-mount device measuring 2.5 mm × 1.25 mm × 0.7 mm (max height), with gull-wing terminations and top-side marking "2S6". This compact footprint enables integration into dense mobile PCB layouts without compromising thermal or electrical performance.
DF2S6P2FU,H3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- SC-76, SOD-323
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 5.6V
- Voltage - Clamping (Max) @ Ipp:
- 23.7V
- Current - Peak Pulse (10/1000µs):
- 80A (8/20µs)
- Power - Peak Pulse:
- 1900W (1.9kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 600pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- USC
DF2S6P2FU,H3F FAQ
1.How can I place an order for DF2S6P2FU,H3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2S6P2FU,H3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2S6P2FU,H3F reliable?
The price and inventory of DF2S6P2FU,H3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2S6P2FU,H3F is usually 5 days.
3.What payment methods are accepted for DF2S6P2FU,H3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2S6P2FU,H3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2S6P2FU,H3F?
DF2S6P2FU,H3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2S6P2FU,H3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2S6P2FU,H3F?
For technical support, including DF2S6P2FU,H3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2S6P2FU,H3F requirements.
6.How does Aetrix verify that DF2S6P2FU,H3F is sourced from the original manufacturer or authorized distributors?
All DF2S6P2FU,H3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2S6P2FU,H3F meets industry standards.
7.What is the process for return or replacement of DF2S6P2FU,H3F?
All DF2S6P2FU,H3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2S6P2FU,H3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2S6P2FU,H3F part is unused and in its original packaging.
Return procedure for DF2S6P2FU,H3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2S6P2FU,H3F Tags
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Toshiba Semiconductor and Storage
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