Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage DF3A5.6F,LF

Part No.:
DF3A5.6F,LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
TVS Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDF3A5.6F,LF.pdf
Description:
TVS DIODE 2.5VWM SMINI
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,900

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DF3A5.6F from TOSHIBA is a dual-channel ESD protection diode array designed for high-speed data lines, featuring 5.6 V Zener voltage (IZ = 5 mA), ±30 kV IEC61000-4-2 contact discharge immunity, and 65 pF terminal capacitance at 0 V/1 MHz - deployed in USB 2.0, HDMI, and audio interface protection.

For engineers reviewing the DF3A5.6F datasheet, DF3A5.6F pinout, DF3A5.6F application, or DF3A5.6F equivalent, key selection criteria include ESD robustness, low clamping voltage, ultra-low capacitance for signal integrity, dual-cathode configuration, and TO-236MOD (SC-59) package compatibility with space-constrained PCB layouts.

Technical Context

This device implements two independent Zener-type ESD clamps in a single ultra-compact surface-mount package, each with cathode-anode polarity optimized for bidirectional transient suppression on I/O lines. It operates exclusively as a transient voltage suppressor - not as a voltage regulator or constant-voltage reference.

The dual-diode topology enables shared anode connection (Pin 3) and separate cathodes (Pins 1 & 2), supporting differential or single-ended line protection without external biasing. Its 65 pF capacitance and 40 Ω dynamic impedance ensure minimal signal distortion in high-frequency interfaces up to 480 Mbps.

Key Specifications

ParameterValue and Actual Design Meaning
Zener voltage5.6 V at 5 mA - defines clamping threshold for ESD transients on protected lines
ESD immunity±30 kV contact discharge per IEC61000-4-2 - exceeds industrial-grade surge requirements
Terminal capacitance65 pF at 0 V / 1 MHz - preserves signal integrity in USB 2.0 and audio paths
Power dissipation150 mW - supports short-duration ESD pulses without thermal failure
Junction temperature150 °C max - enables operation in extended-temperature industrial environments
PackageTO-236MOD (JEDEC) / SC-59 (JEITA) - 3-pin SMT footprint with 12 mg mass

Pinout & Package

DF3A5.6F uses a 3-pin TO-236MOD (SC-59) plastic surface-mount package with gull-wing leads. Pin 1: Cathode 1; Pin 2: Cathode 2; Pin 3: Anode (common anode configuration).

Pin/TerminalCircuit RoleDesign Meaning
1Cathode 1First ESD clamp cathode - connects to protected signal line 1 (e.g., D+)
2Cathode 2Second ESD clamp cathode - connects to protected signal line 2 (e.g., D−)
3AnodeCommon anode node - ties to ground plane for bidirectional clamping path

Key Features

FeatureDesign Value
Dual-channel ESD protectionTwo independent Zener clamps in one package reduce component count and PCB area by 50% vs. discrete diodes
Ultra-low capacitance65 pF ensures <1% signal attenuation at 480 MHz - critical for USB 2.0 eye diagram compliance
High ESD withstand level±30 kV contact discharge meets IEC61000-4-2 Level 4 - eliminates need for secondary protection stages
Common-anode architectureSingle ground connection simplifies layout and improves return-path consistency across differential pairs

Applications

USB 2.0 Interface ProtectionHDMI Data Lane Protection

Use Scenario: Protecting D+ and D− lines of USB 2.0 ports against human-body-model ESD events during plug/unplug cycles.

IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector entry point.

Use Value: 65 pF capacitance prevents signal rise-time degradation; ±30 kV rating eliminates field failures in consumer docking stations.

Use Scenario: Shielding TMDS clock and data channels in HDMI 1.4 receivers from contact ESD in home theater equipment.

IC Role / Device Role / Timing Role: Low-capacitance clamp on differential high-speed lanes before receiver input buffers.

Use Value: Dual-cathode configuration allows independent line protection without skew; 5.6 V clamping avoids false triggering on 3.3 V logic rails.

Smartphone Audio Jack ESDIndustrial Sensor Interface

Use Scenario: Safeguarding analog audio lines (MIC, HP_L/R) in mobile handsets exposed to repeated pocket discharge events.

IC Role / Device Role / Timing Role: Signal-line ESD suppressor with grounded common anode and rail-to-rail clamping capability.

Use Value: 150 mW power rating handles multiple sub-100 ns ESD pulses; 12 mg weight supports thin-form-factor mechanical design.

Use Scenario: Protecting RS-485 or CAN FD transceiver I/O pins in factory automation controllers mounted in ungrounded enclosures.

IC Role / Device Role / Timing Role: Primary-level ESD guard for isolated communication interfaces subject to maintenance-handling surges.

Use Value: −55 to 150 °C storage range ensures reliability in wide ambient conditions; TO-236MOD solderability supports automated reflow processes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor NUP4202MR6T1GSingle-channel, 5.5 V clamping, 15 pF capacitance - lower capacitance but no dual-cathode configurationRequires two devices for differential pair; better suited for RF antenna lines than USBSelect when ultra-low capacitance (<20 pF) is prioritized over part count reduction
Vishay ESDE05C1-2Dual-channel, 5.5 V clamping, 100 pF capacitance - higher capacitance, AEC-Q200 qualifiedDesigned for automotive infotainment; not optimized for USB 2.0 signal fidelityPrefer for automotive-grade designs where qualification outweighs high-speed performance

Compared with NUP4202MR6T1G and ESDE05C1-2, the DF3A5.6F uniquely balances dual-line integration, 65 pF capacitance, and ±30 kV ESD rating - making it optimal for cost-sensitive, space-constrained USB and HDMI endpoint protection where signal integrity and BOM simplification are jointly critical.

Availability

DF3A5.6F is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI data lane safeguarding, and smartphone audio jack ESD mitigation requiring stable component supply across production lifecycles.

Supply support for DF3A5.6F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on efficiency, miniaturization, and reliability for industrial and consumer systems.

The DF3A5.6F belongs to Toshiba's ESD protection diode family engineered specifically for high-density, high-speed digital interface protection - prioritizing low capacitance, repeatable clamping behavior, and compact packaging for portable and multimedia electronics.

FAQ

What is the primary function of the DF3A5.6F?

The DF3A5.6F is a dual-channel ESD protection diode array designed exclusively for electrostatic discharge suppression on high-speed data lines. It is not intended for voltage regulation or continuous power dissipation. Each channel features a Zener-based clamp with 5.6 V nominal breakdown voltage at 5 mA, and the device must be used only in accordance with Toshiba's specified ESD protection applications - as stated in its official documentation and marking.

Does the DF3A5.6F support bidirectional ESD protection?

Yes, the DF3A5.6F provides bidirectional ESD protection via its common-anode configuration: Pins 1 and 2 serve as independent cathodes, while Pin 3 is the shared anode tied to ground. This arrangement enables symmetrical clamping for both positive and negative transients on each protected line - essential for differential interfaces like USB 2.0 D+ and D−, where polarity reversal during ESD events must be handled without signal inversion or latch-up.

What is the significance of the 65 pF terminal capacitance in the DF3A5.6F?

The 65 pF terminal capacitance (measured between cathode and anode at 0 V and 1 MHz) directly impacts high-speed signal integrity. In USB 2.0 applications, this value ensures minimal rise-time degradation and maintains eye diagram compliance at 480 Mbps. Capacitance below 100 pF avoids excessive loading on fast edges, and the DF3A5.6F's 65 pF strikes a balance between ESD robustness and signal fidelity - unlike lower-capacitance alternatives that sacrifice clamping energy handling.

Can the DF3A5.6F replace a standard Zener diode in voltage regulation circuits?

No, the DF3A5.6F is explicitly designated by Toshiba for ESD protection only and must not be used as a voltage regulator or constant-voltage reference. Its electrical characteristics - including Zener voltage tolerance (5.3–6.0 V), dynamic impedance (≤40 Ω), and power rating (150 mW) - are optimized for transient suppression, not steady-state regulation. Using DF3A5.6F in voltage reference roles violates its defined application scope and may result in unreliable performance or premature failure.

What package type does the DF3A5.6F use, and why does it matter for layout?

The DF3A5.6F uses the TO-236MOD (JEDEC) / SC-59 (JEITA) 3-pin surface-mount package - identical in footprint to standard SOT-23 but with tighter lead pitch and gull-wing geometry. Its 12 mg mass and compact outline enable dense routing near connectors, while the common-anode pinout (Pin 3) simplifies ground-plane stitching and reduces loop inductance in ESD current paths - critical for maintaining clamping effectiveness above 1 GHz.

DF3A5.6F,LF Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Package/Case:
TO-236-3, SC-59, SOT-23-3
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
2
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
2.5V
Voltage - Breakdown (Min):
5.3V
Voltage - Clamping (Max) @ Ipp:
-
Current - Peak Pulse (10/1000µs):
-
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
65pF @ 1MHz
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
S-Mini

DF3A5.6F,LF FAQ

1.How can I place an order for DF3A5.6F,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for DF3A5.6F,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DF3A5.6F,LF reliable?

The price and inventory of DF3A5.6F,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF3A5.6F,LF is usually 5 days.

3.What payment methods are accepted for DF3A5.6F,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF3A5.6F,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DF3A5.6F,LF?

DF3A5.6F,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DF3A5.6F,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DF3A5.6F,LF?

For technical support, including DF3A5.6F,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF3A5.6F,LF requirements.

6.How does Aetrix verify that DF3A5.6F,LF is sourced from the original manufacturer or authorized distributors?

All DF3A5.6F,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF3A5.6F,LF meets industry standards.

7.What is the process for return or replacement of DF3A5.6F,LF?

All DF3A5.6F,LF units undergo pre-shipment inspection (PSI). If there is an issue with DF3A5.6F,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DF3A5.6F,LF part is unused and in its original packaging.

Return procedure for DF3A5.6F,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DF3A5.6F,LF Tags

  • DF3A5.6F,LF
  • DF3A5.6F,LF PDF
  • DF3A5.6F,LF Datasheet
  • DF3A5.6F,LF Specifications
  • DF3A5.6F,LF Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage DF3A5.6F,LF
  • Buy DF3A5.6F,LF
  • DF3A5.6F,LF Price
  • DF3A5.6F,LF Distributor
  • DF3A5.6F,LF Supplier
  • DF3A5.6F,LF Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER