Toshiba Semiconductor and Storage DF3A5.6FV,L3F

Overview

DF3A5.6FV,L3F from Toshiba is a dual-channel ESD protection diode array designed for high-speed data line protection in portable electronics. It features 5.6 V nominal Zener voltage, ±30 kV IEC61000-4-2 contact discharge immunity, 65 pF terminal capacitance at 0 V/1 MHz, and ultra-compact VESM package (1.2 × 0.8 × 0.32 mm). It is used on USB 2.0, HDMI, and audio jack interfaces to suppress transient overvoltage without signal distortion.

For engineers reviewing the DF3A5.6FV,L3F datasheet, DF3A5.6FV,L3F pinout, DF3A5.6FV,L3F application, or DF3A5.6FV,L3F equivalent, key selection criteria include ESD immunity level, low capacitance for high-speed signal integrity, dual-cathode configuration for bidirectional line protection, and thermal derating compliance per Toshiba Reliability Handbook.

Technical Context

This device implements two independent Zener clamping diodes in a single ultra-small surface-mount package, with shared anode and separate cathodes (Pin 1 = Cathode 1, Pin 2 = Cathode 2, Pin 3 = Anode). It operates exclusively as a transient voltage suppressor - not as a voltage regulator - and requires no bias circuitry.

Its electrical behavior is defined by reverse breakdown at 5.6 V (±0.4 V), dynamic impedance ≤40 Ω at 5 mA, leakage current ≤1.0 μA at 2.5 V reverse bias, and junction temperature limit of 150°C. The 65 pF capacitance is measured between cathode and anode at 0 V DC bias and 1 MHz, making it suitable for <480 Mbps data lines.

Key Specifications

Pinout & Package

VESM package: 1.2 mm × 0.8 mm × 0.32 mm, 3-pin ultra-miniature surface-mount, weight 0.0015 g (typ.), JEITA code 1-1Q1B.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with DF3A5.6FV,L3F, the ESD9X5.0ST5G offers lower capacitance but lacks integrated dual-channel topology and occupies more PCB area; no verified pin-compatible or drop-in replacement exists among mainstream alternatives - design reuse requires schematic and layout adaptation.

Availability

DF3A5.6FV,L3F is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI hot-plug detection, and smartphone audio jack ESD hardening requiring stable component supply across high-volume consumer electronics programs.

Supply support for DF3A5.6FV,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for automotive, industrial, and consumer applications.

The DF3A5.6FV,L3F belongs to Toshiba's DF3A-series ESD protection diode family, engineered specifically for ultra-compact, high-immunity transient suppression in portable and wearable electronics interfaces.

FAQ

What is the primary function of the DF3A5.6FV,L3F?

The DF3A5.6FV,L3F is a dual-channel ESD protection diode array designed solely for electrostatic discharge suppression on high-speed signal lines. It is not intended for voltage regulation or constant-current applications. Its Zener clamping action activates only during transient overvoltage events, with a nominal breakdown voltage of 5.6 V and ±30 kV IEC61000-4-2 contact discharge rating. DF3A5.6FV,L3F must be applied strictly per Toshiba's handling precautions and derating guidelines.

Can DF3A5.6FV,L3F be used as a general-purpose Zener diode?

No - DF3A5.6FV,L3F is explicitly restricted to ESD protection use only, as stated in Toshiba's product documentation. It is not characterized or guaranteed for continuous Zener operation, constant-voltage regulation, or DC bias applications. Using DF3A5.6FV,L3F outside its specified ESD clamping role may result in premature failure or unreliable performance. Always refer to the official DF3A5.6FV,L3F datasheet for permitted operating conditions.

What does the "L3F" suffix indicate in DF3A5.6FV,L3F?

The "L3F" suffix denotes Toshiba's tape-and-reel packaging specification: 3,000 units per reel, 8 mm tape width, and embossed carrier tape conforming to EIA-481-D standards. This packaging format ensures automated SMT placement compatibility and is standard for DF3A5.6FV,L3F distribution through authorized channels. DF3A5.6FV,L3F is not offered in cut-tape or tray formats.

How does DF3A5.6FV,L3F achieve ±30 kV ESD immunity?

DF3A5.6FV,L3F achieves ±30 kV IEC61000-4-2 contact discharge immunity through optimized silicon junction design and precise process control, enabling rapid avalanche breakdown below damaging voltage thresholds. Its low dynamic impedance (≤40 Ω) and controlled Zener knee ensure energy diversion away from sensitive downstream ICs. DF3A5.6FV,L3F must be mounted with short, low-inductance traces to ground to preserve this rated immunity in end-application PCB layouts.

Is DF3A5.6FV,L3F RoHS compliant and lead-free?

Yes - DF3A5.6FV,L3F complies with EU RoHS Directive 2011/65/EU and is lead-free, halogen-free, and green-compliant per Toshiba's environmental specifications. The device uses matte tin plating on terminals and meets J-STD-020 moisture sensitivity level (MSL) 1. Full compliance documentation, including material declarations and test reports, is available upon request from Aetrix Electronics for DF3A5.6FV,L3F procurement.