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Toshiba Semiconductor and Storage DF3A5.6LFU,LF
- Part No.:
- DF3A5.6LFU,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
DF3A5.6LFU,LF.pdf
- Description:
- TVS DIODE 3.5VWM USM
- Quantity:
- Payment:
- Shipping:
Inventory:21,315
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Product details
Overview
DF3A5.6LFU from TOSHIBA is a dual-channel ESD protection diode array designed for high-speed data lines in portable electronics, featuring 5.6 V nominal zener voltage, 8.0 pF typical terminal capacitance, ±8 kV IEC61000-4-2 contact discharge immunity, and ultra-compact SOT-323 (SC-70) package for space-constrained USB/USB-C and audio interface protection.
For engineers reviewing the DF3A5.6LFU datasheet, DF3A5.6LFU pinout, DF3A5.6LFU application, or DF3A5.6LFU equivalent, key selection criteria include low-capacitance signal integrity preservation, dual-diode integration for bidirectional line protection, zener clamping voltage tolerance (5.3–6.0 V), and compliance with IEC61000-4-2 Level 4 ESD immunity without derating.
Technical Context
The DF3A5.6LFU integrates two independent ESD protection diodes in a single SOT-323 package, each configured as a cathode-anode zener clamp with 5.6 V nominal breakdown. It operates exclusively in transient suppression mode-not as a continuous-voltage regulator-requiring VR ≤ 3.5 V to maintain IR ≤ 1.0 μA.
Its 8.0 pF terminal capacitance (measured at VR = 0 V, f = 1 MHz) enables use on high-speed interfaces up to ~200 MHz without significant signal distortion. The device's ±8 kV IEC61000-4-2 contact discharge rating is guaranteed with no functional or parametric degradation post-test.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener voltage (VZ) | 5.3–6.0 V at IZ = 5 mA - defines clamping threshold range for ESD transients on protected lines |
| Terminal capacitance (CT) | 8.0 pF typ. at VR = 0 V, 1 MHz - preserves signal integrity on USB 2.0, audio, and touch interfaces |
| ESD immunity | ±8 kV per IEC61000-4-2 contact discharge - meets industrial and consumer Level 4 immunity requirements |
| Reverse current (IR) | ≤1.0 μA at VR = 3.5 V - ensures minimal leakage during normal operation of 3.3 V logic lines |
| Power dissipation (P) | 100 mW - supports short-duration ESD pulse energy absorption without thermal runaway |
| Junction temperature (Tj) | 125 °C max - sets upper limit for ambient + self-heating in compact PCB layouts |
Pinout & Package
DF3A5.6LFU uses the SOT-323 (SC-70) surface-mount package: 3-pin, 1.25 mm × 2.1 mm footprint, 0.95 mm height, 0.006 g weight. Pin 1 = Anode 1, Pin 2 = Cathode common (shared), Pin 3 = Anode 2 - verified from Toshiba's official top-view equivalent circuit diagram and marking layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Channel 1 | Connects to protected signal line 1 (e.g., USB D+); reverse-biased during ESD event to clamp to cathode |
| Pin 2 | Common Cathode | Shared cathode node tied to system ground or low-impedance return path; critical for dual-channel symmetry |
| Pin 3 | Anode of Channel 2 | Connects to protected signal line 2 (e.g., USB D−); operates identically to Pin 1 under transient stress |
Key Features
| Feature | Design Value |
|---|---|
| Dual-channel ESD protection in one package | Reduces component count by 50% vs. discrete diodes and eliminates inter-channel layout mismatch |
| Low 8.0 pF terminal capacitance | Enables use on 480 Mbps USB 2.0 differential pairs without measurable eye diagram degradation |
| ±8 kV IEC61000-4-2 contact discharge rating | Guarantees no parametric shift or functional failure after standardized ESD stress testing |
| 5.6 V zener clamping voltage | Protects 3.3 V and 5 V logic rails while avoiding false triggering during normal operation |
Applications
| USB 2.0 Interface Protection | Smartphone Audio Jack ESD Suppression |
|---|---|
Use Scenario: Protecting D+ and D− differential pair in mobile phone USB ports against user-handling ESD events. IC Role / Device Role / Timing Role: Dual-channel transient voltage suppressor clamping fast-rising ESD pulses before they reach the USB PHY IC. Use Value: 8.0 pF capacitance prevents signal rise-time degradation; ±8 kV rating exceeds IEC61000-4-2 Level 4 requirement. | Use Scenario: Guarding 3.5 mm TRRS audio jack lines (MIC, L/R, GND) in handheld devices from plug-in/out ESD. IC Role / Device Role / Timing Role: Bidirectional zener clamp limiting voltage excursions on analog audio paths to safe levels. Use Value: Low leakage (≤1.0 μA at 3.5 V) avoids DC offset in microphone bias networks; SOT-323 fits tight board space. |
| Touchscreen Controller I/O Lines | Industrial HMI Button Interface |
Use Scenario: Shielding capacitive touchscreen controller SDA/SCL and interrupt lines from ESD during finger contact or stylus use. IC Role / Device Role / Timing Role: Fast-response ESD shunt diverting >90% of 15 kV HBM-equivalent energy away from sensitive CMOS inputs. Use Value: 5.3–6.0 V VZ window ensures clamping below absolute maximum ratings of typical touchscreen ICs (6.5 V). | Use Scenario: Protecting momentary push-button inputs on factory HMIs exposed to operator ESD in dry environments. IC Role / Device Role / Timing Role: Zener-based overvoltage limiter on microcontroller GPIO lines handling mechanical switch bounce and ESD. Use Value: 100 mW power rating handles multiple repetitive 8 kV discharges without parameter drift; RoHS-compliant construction meets industrial compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NZQ6V8MUTCG | Single-channel, 6.8 V VZ, 12 pF CT, SOT-23 package | Requires two devices for dual-line protection; higher capacitance limits USB 2.0 use | Prefer when higher clamping voltage is acceptable and board area allows separate placement |
| Vishay ESDD3V3MUTAG | Dual-channel, 3.3 V VZ, 15 pF CT, same SOT-323 footprint | Optimized for 1.8–3.3 V systems; excessive capacitance for >100 Mbps interfaces | Select only for low-voltage, low-speed I/O where tighter clamping threshold is required |
Compared with NZQ6V8MUTCG and ESDD3V3MUTAG, the DF3A5.6LFU uniquely balances 5.6 V clamping, 8.0 pF capacitance, and dual-channel integration in SOT-323-making it optimal for cost- and space-sensitive 3.3 V/5 V high-speed interface protection where precise VZ and minimal CT are jointly critical.
Availability
DF3A5.6LFU is available at Aetrix Electronics and suitable for USB interface protection, smartphone audio jack hardening, touchscreen I/O safeguarding, and industrial HMI button line shielding requiring stable component supply across production lifecycles through April 2026.
Supply support for DF3A5.6LFU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and analog ICs with emphasis on reliability, miniaturization, and application-specific performance.
The DF3A5.6LFU belongs to Toshiba's DF series of ultra-low-capacitance ESD protection arrays, engineered specifically for high-density portable electronics where board space, signal fidelity, and certified ESD robustness are co-constrained design priorities.
FAQ
What is the primary function of the DF3A5.6LFU?
The DF3A5.6LFU is a dual-channel ESD protection diode array designed solely for electrostatic discharge suppression on high-speed signal lines. It is not intended for voltage regulation or continuous power dissipation. Its 5.6 V zener clamping action activates only during transient events, and its 8.0 pF capacitance ensures compatibility with USB 2.0 and audio interfaces. DF3A5.6LFU must be applied within its specified voltage and temperature limits to maintain reliability.
Does the DF3A5.6LFU support bidirectional ESD protection?
Yes, the DF3A5.6LFU provides bidirectional ESD protection via two independent anode-cathode zener structures sharing a common cathode (Pin 2). Each channel clamps positive and negative transients relative to the common cathode node, enabling symmetric protection of differential pairs like USB D+/D−. This architecture is validated in Toshiba's equivalent circuit diagram and electrical test conditions for IEC61000-4-2 testing.
What is the significance of the 8.0 pF terminal capacitance in DF3A5.6LFU?
The 8.0 pF typical terminal capacitance (measured at VR = 0 V, 1 MHz) directly impacts signal integrity on high-speed lines: it limits rise-time degradation and maintains eye opening for protocols such as USB 2.0 (480 Mbps). This value is measured between cathode and anode terminals and is confirmed in Toshiba's Electrical Characteristics table. DF3A5.6LFU's low CT distinguishes it from higher-capacitance alternatives unsuitable for >100 Mbps applications.
Can DF3A5.6LFU be used in place of a standard Zener diode for voltage regulation?
No. The DF3A5.6LFU is explicitly designated by Toshiba for ESD protection only and is not rated for continuous zener operation. Its absolute maximum ratings specify only 100 mW power dissipation and prohibit sustained reverse-bias operation above 3.5 V (where IR ≤ 1.0 μA). Using DF3A5.6LFU as a voltage reference or regulator violates its design intent and may cause premature failure or parametric shift.
What does the ±8 kV IEC61000-4-2 rating mean for DF3A5.6LFU?
The ±8 kV rating means DF3A5.6LFU withstands contact-discharge ESD events per IEC61000-4-2 Level 4 without functional failure or parametric deviation-verified in Toshiba's Guaranteed Level of ESD Immunity table. This applies to both polarities applied between anode and common cathode. Post-test validation confirms no change in VZ, CT, or leakage, making DF3A5.6LFU suitable for consumer and industrial end-equipment requiring certified ESD resilience.
DF3A5.6LFU,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- SC-70, SOT-323
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.5V
- Voltage - Breakdown (Min):
- 5.3V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 8pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- USM
DF3A5.6LFU,LF FAQ
1.How can I place an order for DF3A5.6LFU,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for DF3A5.6LFU,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF3A5.6LFU,LF reliable?
The price and inventory of DF3A5.6LFU,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF3A5.6LFU,LF is usually 5 days.
3.What payment methods are accepted for DF3A5.6LFU,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF3A5.6LFU,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF3A5.6LFU,LF?
DF3A5.6LFU,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF3A5.6LFU,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF3A5.6LFU,LF?
For technical support, including DF3A5.6LFU,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF3A5.6LFU,LF requirements.
6.How does Aetrix verify that DF3A5.6LFU,LF is sourced from the original manufacturer or authorized distributors?
All DF3A5.6LFU,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF3A5.6LFU,LF meets industry standards.
7.What is the process for return or replacement of DF3A5.6LFU,LF?
All DF3A5.6LFU,LF units undergo pre-shipment inspection (PSI). If there is an issue with DF3A5.6LFU,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF3A5.6LFU,LF part is unused and in its original packaging.
Return procedure for DF3A5.6LFU,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF3A5.6LFU,LF Tags
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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