Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage DF3A6.2FV,L3F

Part No.:
DF3A6.2FV,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Category:
TVS Diodes
Package:
SOT-723
Datasheet:
AetrixDF3A6.2FV,L3F.pdf
Description:
TVS DIODE VESM
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,313

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DF3A6.2FV,L3F from Toshiba is a dual-channel ESD protection diode array in a VESM ultra-compact 3-pin package, rated for ±30 kV IEC61000-4-2 contact discharge, with 6.2 V nominal zener voltage (IZ = 5 mA), 55 pF terminal capacitance at 0 V/1 MHz, and 150 mW power dissipation - deployed on USB data lines, HDMI interfaces, and portable audio jacks.

For engineers reviewing the DF3A6.2FV,L3F datasheet, DF3A6.2FV,L3F pinout, DF3A6.2FV,L3F application, or DF3A6.2FV,L3F equivalent, key selection criteria include ESD immunity level, low clamping voltage under transient stress, channel-to-channel isolation, junction capacitance impact on high-speed signal integrity, and compatibility with space-constrained PCB layouts.

Technical Context

This device implements two independent Zener-based ESD protection paths in a single VESM package, each with anode-connected common cathode configuration. It operates exclusively as a transient voltage suppressor - not a voltage regulator - and requires no bias circuitry, relying solely on reverse-biased breakdown during ESD events.

The DF3A6.2FV,L3F delivers clamping performance defined by its 6.2 V nominal zener voltage (5.8–6.6 V range), ≤30 Ω dynamic impedance, and <1 μA reverse leakage at 3 V, enabling fast response to sub-nanosecond ESD pulses while minimizing signal distortion on high-frequency lines.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage6.2 V nominal (5.8–6.6 V min–max at IZ = 5 mA); defines clamping threshold during ESD transients
ESD Immunity±30 kV per IEC61000-4-2 contact discharge; validated no-damage performance at system-level ESD testing
Terminal Capacitance55 pF typical (VR = 0 V, f = 1 MHz); impacts insertion loss and signal integrity on ≤100 Mbps digital lines
Dynamic Impedance≤30 Ω max (IZ = 5 mA); determines voltage overshoot during fast-rising ESD current pulses
Power Dissipation150 mW (on FR4, 25.4 × 25.4 × 1.6 mm); sets thermal limit for repeated surge handling in compact layouts
Reverse Leakage<1 μA max (VR = 3 V); ensures minimal DC loading on protected I/O lines during normal operation

Pinout & Package

VESM package: 0.8 mm × 0.4 mm × 0.32 mm body, 0.4 mm pitch, 0.0015 g typical weight, JEITA-compliant marking.

Pin/TerminalCircuit RoleDesign Meaning
1Cathode 1ESD current sink path for first protected line (e.g., D+)
2Cathode 2ESD current sink path for second protected line (e.g., D−)
3AnodeCommon anode tied to ground reference; enables dual-cathode configuration

Key Features

FeatureDesign Value
Dual-channel ESD protectionTwo independent Zener clamps in one VESM footprint - reduces component count and board area vs. discrete diodes
Ultra-low profile package0.32 mm max height enables use under mechanical shields and in slim mobile enclosures
High ESD robustness±30 kV contact discharge rating exceeds IEC61000-4-2 Level 4 - eliminates need for secondary protection layers
Low signal-line capacitance55 pF typical capacitance preserves rise time and eye diagram integrity on USB 2.0 and audio differential pairs

Applications

USB 2.0 Data LinesHDMI Hot-Plug Detect

Use Scenario: Protecting D+ and D− pins of USB 2.0 connectors against user-handling ESD events in smartphones and OTG adapters.

IC Role / Device Role / Timing Role: Bidirectional transient voltage clamp with common-anode grounding - provides symmetric clamping without affecting DC bias.

Use Value: 55 pF capacitance avoids signal degradation at 480 Mbps; ±30 kV rating ensures compliance with IEC61000-4-2 without layout derating.

Use Scenario: Safeguarding HDMI HPD (Hot-Plug Detect) and CEC lines from electrostatic discharge during cable insertion/removal.

IC Role / Device Role / Timing Role: Low-leakage (≤1 μA at 3 V) Zener clamp that maintains valid logic-high HPD voltage during standby.

Use Value: 6.2 V zener voltage aligns with 3.3 V I/O rail margin; dual-channel design protects both HPD and CEC with one device.

Smartphone Audio JacksIndustrial Sensor Interfaces

Use Scenario: Shielding 3.5 mm TRRS microphone and headset detection lines in handheld devices from pocket-generated ESD.

IC Role / Device Role / Timing Role: Ground-referenced dual-cathode clamp - isolates mic and sense lines while sharing return path.

Use Value: 0.8 mm × 0.4 mm VESM footprint fits within tight jack-mount keepouts; 0.32 mm height avoids interference with flex cables.

Use Scenario: Protecting RS-485 receiver inputs and analog sensor outputs in factory-floor equipment exposed to operator touch discharge.

IC Role / Device Role / Timing Role: Standalone ESD suppressor placed at connector entry point - no control logic or power supply required.

Use Value: 150 °C max junction temperature supports operation in sealed enclosures up to 85 °C ambient; RoHS-compliant construction meets industrial compliance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor NZQ6V2AXV5T1GSingle-channel SOD-523; 6.2 V zener, 60 pF, ±30 kV ratingRequires two devices for dual-line protection; larger footprint than VESMPreferred when board space allows discrete placement and thermal separation is desired
Diodes Inc. D3V3Z5U-7Dual-channel SOT-563; 3.3 V zener, 15 pF, ±15 kV ratingLower clamping voltage and capacitance, but half the ESD immunity levelSuitable for low-voltage 1.8 V/3.3 V I/O where tighter voltage margin is critical

Compared with NZQ6V2AXV5T1G and D3V3Z5U-7, the DF3A6.2FV,L3F uniquely combines dual-channel protection, ultra-compact VESM packaging, and industry-leading ±30 kV immunity - making it optimal for space-constrained, high-reliability consumer interfaces where board area and ESD test margin are primary constraints.

Availability

DF3A6.2FV,L3F is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI hot-plug circuits, and smartphone audio jack ESD hardening requiring stable component supply across high-volume production cycles.

Supply support for DF3A6.2FV,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and analog ICs for industrial, automotive, and consumer applications.

The DF3A6.2FV,L3F belongs to Toshiba's ESD protection diode family engineered specifically for high-density portable electronics - prioritizing ultra-small packaging, high ESD immunity, and minimal signal-line loading.

FAQ

What is the primary function of the DF3A6.2FV,L3F?

The DF3A6.2FV,L3F is a dual-channel ESD protection diode array designed exclusively for electrostatic discharge suppression. It is not intended for voltage regulation or continuous power dissipation. Its function is to clamp transient voltages above ~6.2 V during ESD events, diverting current safely to ground while maintaining signal integrity on protected lines such as USB D+/D− or HDMI HPD.

Does the DF3A6.2FV,L3F require external biasing or control signals?

No, the DF3A6.2FV,L3F operates passively and requires no external bias, power supply, or control signals. It functions solely as a Zener-based clamping device: under normal operating conditions (VR ≤ 3 V), it draws less than 1 μA reverse current; during an ESD event, it breaks down at ~6.2 V to shunt surge current to the common anode (pin 3), which must be connected to a low-impedance ground plane.

Can the DF3A6.2FV,L3F be used on 5 V or 12 V I/O lines?

The DF3A6.2FV,L3F is specified for 6.2 V nominal clamping and is optimized for 3.3 V systems. Using it on 5 V or 12 V lines risks premature conduction or excessive leakage, as its zener tolerance (5.8–6.6 V) overlaps the steady-state voltage range. For higher-voltage rails, Toshiba offers variants like DF3A12FV (12 V) - the DF3A6.2FV,L3F should only be applied where working voltage remains ≤3.3 V with adequate margin.

What does the "L3F" suffix indicate in DF3A6.2FV,L3F?

The "L3F" suffix denotes Toshiba's tape-and-reel packaging specification: L3 indicates 8 mm tape width, and F indicates embossed carrier tape with 3 mm pocket depth. This format ensures automated pick-and-place compatibility for high-speed SMT assembly. The electrical and mechanical specifications of DF3A6.2FV,L3F are identical to DF3A6.2FV in other packaging variants.

Is the DF3A6.2FV,L3F compliant with RoHS and REACH regulations?

Yes, the DF3A6.2FV,L3F is RoHS-compliant and meets EU Directive 2011/65/EU requirements, including lead-free terminations and restricted substance limits. Toshiba confirms compliance via material declarations and third-party testing. Full environmental documentation, including REACH SVHC status, is available through Toshiba's official product portal or authorized distribution channels for the DF3A6.2FV,L3F.

DF3A6.2FV,L3F Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Package/Case:
SOT-723
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
2
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
-
Voltage - Breakdown (Min):
5.8V
Voltage - Clamping (Max) @ Ipp:
-
Current - Peak Pulse (10/1000µs):
-
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
55pF @ 1MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
VESM

DF3A6.2FV,L3F FAQ

1.How can I place an order for DF3A6.2FV,L3F through Aetrix?

Please submit a Request for Quotation (RFQ) for DF3A6.2FV,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DF3A6.2FV,L3F reliable?

The price and inventory of DF3A6.2FV,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF3A6.2FV,L3F is usually 5 days.

3.What payment methods are accepted for DF3A6.2FV,L3F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF3A6.2FV,L3F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DF3A6.2FV,L3F?

DF3A6.2FV,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DF3A6.2FV,L3F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DF3A6.2FV,L3F?

For technical support, including DF3A6.2FV,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF3A6.2FV,L3F requirements.

6.How does Aetrix verify that DF3A6.2FV,L3F is sourced from the original manufacturer or authorized distributors?

All DF3A6.2FV,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF3A6.2FV,L3F meets industry standards.

7.What is the process for return or replacement of DF3A6.2FV,L3F?

All DF3A6.2FV,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF3A6.2FV,L3F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DF3A6.2FV,L3F part is unused and in its original packaging.

Return procedure for DF3A6.2FV,L3F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DF3A6.2FV,L3F Tags

  • DF3A6.2FV,L3F
  • DF3A6.2FV,L3F PDF
  • DF3A6.2FV,L3F Datasheet
  • DF3A6.2FV,L3F Specifications
  • DF3A6.2FV,L3F Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage DF3A6.2FV,L3F
  • Buy DF3A6.2FV,L3F
  • DF3A6.2FV,L3F Price
  • DF3A6.2FV,L3F Distributor
  • DF3A6.2FV,L3F Supplier
  • DF3A6.2FV,L3F Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER