Toshiba Semiconductor and Storage DF3A6.8FU,LF

Overview

DF3A6.8FU,LF from Toshiba is a dual-channel ESD protection diode array designed for high-speed data lines requiring low-capacitance transient suppression. It features 6.8 V nominal Zener voltage (IZ = 5 mA), ±30 kV IEC61000-4-2 contact discharge immunity, and 45 pF typical terminal capacitance at 1 MHz, enabling use in USB 2.0, HDMI, and audio interface protection.

For engineers reviewing the DF3A6.8FU,LF datasheet, DF3A6.8FU,LF pinout, DF3A6.8FU,LF application, or DF3A6.8FU,LF equivalent, key selection criteria include guaranteed ±30 kV ESD robustness, ultra-low 45 pF capacitance for signal integrity preservation, dual-diode configuration in SOT-323 package, and strict compliance with ESD-only usage restrictions per Toshiba's specification.

Technical Context

This device implements two independent Zener-type ESD clamps in a single ultra-compact SOT-323 package, each with a nominal breakdown voltage of 6.8 V and dynamic impedance ≤25 Ω at 5 mA. Its design targets fast transient response to electrostatic events while minimizing parasitic capacitance on sensitive signal paths.

The DF3A6.8FU,LF operates exclusively as an ESD suppressor - not as a voltage regulator or constant-voltage reference - and must not be subjected to continuous reverse bias above 5 V or sustained forward conduction. Its guaranteed immunity level is validated per IEC61000-4-2 Contact Discharge only.

Key Specifications

Pinout & Package

DF3A6.8FU,LF is housed in a standard SOT-323 (SC-70) surface-mount package measuring 2.2 × 2.0 × 0.9 mm, with three terminals: Anode 1, Cathode (common), and Anode 2. The dual-anode configuration supports bidirectional clamping across two independent signal lines referenced to a shared cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with NZQ6V8BHT1G and ESDD3V3MUTAG, the DF3A6.8FU,LF uniquely balances dual-channel integration, 6.8 V clamping for mixed-voltage systems, and industry-leading ±30 kV immunity - making it optimal for cost-sensitive, space-constrained USB/HDMI designs where reliability under real-world handling is non-negotiable.

Availability

DF3A6.8FU,LF is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI data lane safeguarding, and smartphone audio jack ESD mitigation requiring stable component supply and long-term lifecycle support.

Supply support for DF3A6.8FU,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and miniaturization for industrial and consumer electronics.

The DF3A6.8FU,LF belongs to Toshiba's DF series of ultra-compact ESD protection arrays, engineered specifically for high-density portable electronics where board space, assembly cost, and certified ±30 kV immunity are primary constraints.

FAQ

What is the primary function of the DF3A6.8FU,LF?

The DF3A6.8FU,LF is a dual-channel ESD protection diode array intended solely for electrostatic discharge suppression on high-speed signal lines. It is not rated for continuous voltage regulation or power dissipation. Its 6.8 V Zener voltage, 45 pF capacitance, and ±30 kV IEC61000-4-2 rating define its role as a transient clamp - not a functional circuit element. Designers must observe Toshiba's explicit restriction against using DF3A6.8FU,LF in constant-voltage applications.

Can the DF3A6.8FU,LF be used on 5 V logic lines?

Yes, the DF3A6.8FU,LF is suitable for protecting 5 V logic lines because its 6.4–7.2 V Zener voltage range provides headroom above the 5 V rail while clamping transients before they reach downstream components. Its ≤0.5 μA reverse leakage at 5 V ensures minimal impact on DC bias. However, it must never be used as a 5 V regulator - Toshiba explicitly prohibits any non-ESD application for DF3A6.8FU,LF.

What is the significance of the "LF" suffix in DF3A6.8FU,LF?

The "LF" suffix in DF3A6.8FU,LF indicates lead-free (Pb-free) construction and RoHS compliance, confirmed by Toshiba's environmental documentation. This designation applies to the terminal finish and internal materials, ensuring compatibility with modern reflow soldering profiles and regulatory requirements for consumer electronics. The electrical and mechanical specifications of DF3A6.8FU,LF remain identical to the non-LF version except for plating composition.

Does the DF3A6.8FU,LF require external biasing or control signals?

No, the DF3A6.8FU,LF is a passive, unidirectional Zener-based ESD suppressor that requires no external power, biasing, or control signals. It functions automatically during overvoltage transients by avalanche breakdown across its junctions. Its operation depends solely on the voltage differential between anode and cathode terminals - no enable pins, configuration registers, or timing dependencies exist in DF3A6.8FU,LF.

How does the DF3A6.8FU,LF compare to TVS diodes with similar voltage ratings?

The DF3A6.8FU,LF differs from general-purpose TVS diodes in its optimized low-capacitance (45 pF) design and certified ±30 kV ESD immunity per IEC61000-4-2 - a level exceeding most standard TVS devices. Unlike many TVS diodes, DF3A6.8FU,LF is qualified exclusively for ESD, not surge or lightning events. Its SOT-323 dual-channel layout also offers integration advantages over discrete TVS solutions in space-constrained layouts.