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Toshiba Semiconductor and Storage DF3A6.8FV,L3F
- Part No.:
- DF3A6.8FV,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- SOT-723
- Datasheet:
-
DF3A6.8FV,L3F.pdf
- Description:
- TVS DIODE VESM
- Quantity:
- Payment:
- Shipping:
Inventory:15,740
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Product details
Overview
DF3A6.8FV,L3F from Toshiba is a dual-channel ESD protection diode array in a VESM ultra-compact surface-mount package, rated for ±30 kV IEC61000-4-2 contact discharge, with 6.8 V nominal Zener voltage (IZ = 5 mA), 45 pF terminal capacitance at 1 MHz, and 150 mW power dissipation - deployed on high-speed USB 2.0 data lines.
For engineers reviewing the DF3A6.8FV,L3F datasheet, DF3A6.8FV,L3F pinout, DF3A6.8FV,L3F application, or DF3A6.8FV,L3F equivalent, key selection criteria include ESD immunity level, low clamping capacitance for signal integrity, dual-cathode configuration for bidirectional line protection, and JEITA-compliant VESM footprint compatibility with space-constrained portable electronics layouts.
Technical Context
This device implements two independent Zener-type ESD protection elements sharing a common anode, enabling bidirectional transient suppression on differential or single-ended signal pairs. Its design targets fast response to sub-nanosecond ESD pulses while maintaining low dynamic impedance (≤25 Ω) and minimal parasitic capacitance (45 pF typical).
The VESM package (1.2 × 0.8 × 0.32 mm) integrates both cathodes on separate terminals (Pin 1 and Pin 2) with a shared anode (Pin 3), supporting compact routing of protected lines without cross-coupling - critical for USB 2.0, HDMI, and audio interface traces where trace length matching and impedance control are essential.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage | 6.8 V (nominal, at 5 mA); defines clamping threshold for ESD transients on protected lines |
| ESD Immunity | ±30 kV per IEC61000-4-2 contact discharge; ensures robustness against human-body-model ESD events |
| Terminal Capacitance | 45 pF (typ., VR = 0 V, f = 1 MHz); preserves signal integrity on high-speed interfaces up to 480 Mbps |
| Power Dissipation | 150 mW (on FR4, 25.4 mm × 25.4 mm × 1.6 mm); supports short-duration pulse energy absorption without thermal runaway |
| Reverse Leakage | ≤0.5 μA (at VR = 5 V); minimizes standby current draw and avoids DC loading of sensitive analog/digital inputs |
| Junction Temp Limit | 150 °C maximum; constrains operating ambient and PCB copper area requirements for thermal management |
Pinout & Package
VESM package: 1.2 mm × 0.8 mm × 0.32 mm body, 0.4 mm pitch, 3-terminal SMD with exposed pad not present; optimized for automated placement and reflow in high-density consumer PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 | Connects to first protected signal line (e.g., USB D+); enables unidirectional clamping to common anode |
| 2 | Cathode 2 | Connects to second protected signal line (e.g., USB D−); allows independent but coordinated ESD suppression |
| 3 | Anode | Common return path to ground or low-impedance reference; must be routed with minimal inductance for effective clamping |
Key Features
| Feature | Design Value |
|---|---|
| Dual-channel ESD protection | Two independent Zener clamps in one VESM package reduce component count and board area by 50% vs. discrete diodes |
| Ultra-low capacitance | 45 pF typical between cathode and anode preserves rise time and eye diagram integrity on 480 Mbps USB 2.0 links |
| High ESD withstand | ±30 kV contact discharge rating exceeds IEC61000-4-2 Level 4, eliminating need for secondary protection stages |
| Compact VESM footprint | 1.2 × 0.8 mm outline matches JEITA standard 1-1Q1B, enabling direct replacement in space-limited mobile designs |
Applications
| USB 2.0 Interface Protection | HDMI Data Lane Protection |
|---|---|
Use Scenario: Protecting D+ and D− differential pair in smartphone USB OTG ports against repeated handling-induced ESD events. IC Role / Device Role / Timing Role: Dual-cathode Zener clamp limiting transient voltage to ≤12 V during ±30 kV contact discharge, preserving PHY-level signal fidelity. Use Value: Prevents latch-up or permanent damage to USB transceivers while maintaining <100 ps response time and <45 pF loading. | Use Scenario: Shielding TMDS clock and data channels in portable media adapters from ESD during cable insertion/removal. IC Role / Device Role / Timing Role: Bidirectional clamping element placed within 3 mm of HDMI connector, referenced to clean ground plane. Use Value: Enables compliance with HDMI 1.4 ESD robustness requirements without degrading 165 MHz pixel clock edge rates. |
| Smartphone Audio Jack ESD Guard | Industrial Sensor Interface Protection |
Use Scenario: Safeguarding microphone and headset detection lines in 3.5 mm TRRS jacks against user-touch ESD in handheld devices. IC Role / Device Role / Timing Role: Low-capacitance dual-diode array suppressing transients before they reach codec input amplifiers. Use Value: Eliminates audible pop/crackle during jack insertion and prevents false button-press detection due to ESD coupling. | Use Scenario: Protecting RS-485 receiver inputs in factory-floor IoT nodes exposed to charged personnel or tools. IC Role / Device Role / Timing Role: Common-anode dual-clamp absorbing fast-rising ESD pulses on A/B bus lines before transceiver front-end. Use Value: Maintains >25 kV system-level ESD immunity while adding <0.5 μA leakage and no measurable propagation delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | Single-channel, 0.65 mm × 0.65 mm X2SON; 12 pF capacitance; ±8 kV IEC61000-4-2 rating | Lower ESD rating and smaller capacitance suit low-voltage GPIOs, not high-energy USB/HDMI lines | Select when board space is tighter and ESD threat level is ≤±8 kV; not suitable for DF3A6.8FV,L3F's ±30 kV use cases |
| ESD9X5.0ST5G | Dual-channel SOT-523; 6.5 V VZ; 100 pF capacitance; ±30 kV rating | Larger 1.6 mm × 0.8 mm footprint and higher capacitance limit use in >100 Mbps interfaces | Acceptable for cost-sensitive industrial RS-485 designs where 100 pF loading is tolerable; not optimal for USB 2.0 |
Compared with TPD2E001DRYR and ESD9X5.0ST5G, the DF3A6.8FV,L3F uniquely balances ±30 kV immunity, 45 pF capacitance, and 1.2 mm × 0.8 mm VESM size - making it the only option among the three qualified for space-constrained, high-speed consumer interface protection without sacrificing ESD margin.
Availability
DF3A6.8FV,L3F is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI data lane safeguarding, and smartphone audio jack ESD guarding requiring stable component supply across high-volume consumer electronics production.
Supply support for DF3A6.8FV,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on efficiency, miniaturization, and reliability for mass-market electronics.
The DF3A6.8FV,L3F belongs to Toshiba's DF series of ultra-compact ESD protection diodes, engineered specifically for high-density portable devices where board space, signal integrity, and certified ±30 kV immunity are co-constrained design requirements.
FAQ
What is the primary function of the DF3A6.8FV,L3F?
The DF3A6.8FV,L3F is a dual-channel ESD protection diode array designed exclusively for electrostatic discharge suppression on high-speed signal lines. It uses two Zener clamps sharing a common anode to limit transient voltages to safe levels during ±30 kV IEC61000-4-2 contact discharge events. The DF3A6.8FV,L3F is not intended for voltage regulation or constant-current applications.
Does the DF3A6.8FV,L3F support bidirectional signal paths like USB D+ and D−?
Yes, the DF3A6.8FV,L3F supports bidirectional protection via its dual-cathode architecture: Pin 1 and Pin 2 serve as independent cathodes connected to separate signal lines (e.g., USB D+ and D−), while Pin 3 (anode) connects to a common low-impedance ground reference. This configuration enables symmetrical clamping for both positive and negative ESD transients on each line.
What is the significance of the 45 pF terminal capacitance in the DF3A6.8FV,L3F specification?
The 45 pF typical terminal capacitance (measured between cathode and anode at 0 V reverse bias and 1 MHz) directly impacts high-speed signal integrity. For the DF3A6.8FV,L3F, this value ensures minimal distortion on USB 2.0 (480 Mbps) and HDMI 1.4 (165 MHz) signals, avoiding excessive rise-time degradation or eye closure. Lower capacitance would improve speed margin; higher values risk signal attenuation or jitter.
Can the DF3A6.8FV,L3F replace a single-channel ESD diode in existing designs?
No - the DF3A6.8FV,L3F is a dual-channel device with a shared anode and two dedicated cathodes; substituting it for a single-channel diode requires redesigning the PCB layout to accommodate both protected lines and the common anode connection. Its pinout (Cathode1/Cathode2/Anode) is incompatible with single-diode footprints like SOD-523 or SC-70, and using only one cathode degrades ESD performance due to unbalanced current sharing.
Is the DF3A6.8FV,L3F compliant with RoHS and REACH regulations?
Yes, the DF3A6.8FV,L3F meets EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006 requirements, as confirmed by Toshiba's material declarations and manufacturing records. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits, and all substances of very high concern (SVHC) are below 0.1 wt% per homogeneous material. Full compliance documentation is available upon request from Aetrix Electronics.
DF3A6.8FV,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- SOT-723
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- -
- Voltage - Breakdown (Min):
- 6.4V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 45pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- VESM
DF3A6.8FV,L3F FAQ
1.How can I place an order for DF3A6.8FV,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF3A6.8FV,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF3A6.8FV,L3F reliable?
The price and inventory of DF3A6.8FV,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF3A6.8FV,L3F is usually 5 days.
3.What payment methods are accepted for DF3A6.8FV,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF3A6.8FV,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF3A6.8FV,L3F?
DF3A6.8FV,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF3A6.8FV,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF3A6.8FV,L3F?
For technical support, including DF3A6.8FV,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF3A6.8FV,L3F requirements.
6.How does Aetrix verify that DF3A6.8FV,L3F is sourced from the original manufacturer or authorized distributors?
All DF3A6.8FV,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF3A6.8FV,L3F meets industry standards.
7.What is the process for return or replacement of DF3A6.8FV,L3F?
All DF3A6.8FV,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF3A6.8FV,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF3A6.8FV,L3F part is unused and in its original packaging.
Return procedure for DF3A6.8FV,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF3A6.8FV,L3F Tags
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PESD2V0Y1BSFYL
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