Toshiba Semiconductor and Storage DF3A6.8LFV,L3F

Overview

DF3A6.8LFV from TOSHIBA is a dual-channel ESD protection diode array designed for high-speed data lines, featuring 6.8 V nominal Zener voltage, 6.0 pF typical terminal capacitance, ±8 kV IEC61000-4-2 contact discharge immunity, and ultra-compact VESM package-used in USB 2.0, HDMI, and audio interface signal line protection.

For engineers reviewing the DF3A6.8LFV datasheet, DF3A6.8LFV pinout, DF3A6.8LFV application, or DF3A6.8LFV equivalent, key selection criteria include low-capacitance bidirectional clamping, dual-cathode configuration, guaranteed ESD robustness, and compatibility with space-constrained portable electronics layouts.

Technical Context

This device implements two independent Zener-based ESD clamps in a single VESM (1.2 × 0.8 × 0.45 mm) package, with cathodes isolated and shared anode connection. It operates exclusively as a transient suppressor-not a voltage regulator-with no DC biasing requirement beyond signal path placement.

Clamping action begins near 6.8 V (IZ = 5 mA), exhibits ≤50 Ω dynamic impedance, and maintains <0.5 μA reverse leakage at 5 V. Its 6.0 pF capacitance is measured at 0 V bias and 1 MHz, enabling minimal signal distortion on high-frequency interfaces up to ~500 MHz.

Key Specifications

Pinout & Package

VESM package (1.2 × 0.8 × 0.45 mm, JEITA code 1-1Q1B, weight 1.5 mg) with exposed pad not electrically connected; surface-mount, lead-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with TPD2E001DRYR and ESD5Z6.8T5G, the DF3A6.8LFV delivers dual-line protection in one ultra-compact device with optimal capacitance for USB 2.0-reducing BOM count, layout complexity, and risk of mismatched clamping thresholds across differential pairs.

Availability

DF3A6.8LFV is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI DDC line hardening, and smartphone audio jack ESD mitigation requiring stable component supply and long-term production continuity.

Supply support for DF3A6.8LFV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components for consumer, industrial, and automotive markets, with emphasis on power efficiency, miniaturization, and system-level protection.

The DF3A6.8LFV belongs to Toshiba's ESD protection diode family targeting high-speed digital interfaces, engineered specifically to meet IEC61000-4-2 compliance while minimizing parasitic capacitance in ultra-small packages.

FAQ

What is the primary function of the DF3A6.8LFV?

The DF3A6.8LFV is a dual-channel ESD protection diode array designed solely for electrostatic discharge suppression on high-speed signal lines. It is not intended for voltage regulation or continuous DC operation. Its 6.8 V Zener voltage, 6.0 pF capacitance, and ±8 kV IEC61000-4-2 rating make it suitable for protecting USB 2.0, HDMI DDC, and audio interfaces. The DF3A6.8LFV must be used strictly within its specified ESD-only operational context.

Can the DF3A6.8LFV be used as a Zener voltage reference?

No-the DF3A6.8LFV is explicitly designated by Toshiba for ESD protection only and is not characterized or guaranteed for voltage reference stability, temperature coefficient, or long-term DC regulation. Its Zener voltage specification applies only under transient ESD test conditions (IZ = 5 mA pulse), not steady-state bias. Using the DF3A6.8LFV as a voltage reference violates its defined usage and may result in unreliable performance or premature failure.

What does the pin configuration of the DF3A6.8LFV indicate for PCB layout?

The DF3A6.8LFV uses a 3-pin VESM package with Pin 1 = Cathode 1, Pin 2 = Cathode 2, and Pin 3 = Shared Anode. For optimal ESD performance, the anode (Pin 3) must connect to a low-inductance ground plane, and each cathode should route directly to its protected signal line with minimal trace length. This configuration enables independent clamping of differential pairs without mutual interference-critical for maintaining signal integrity in the DF3A6.8LFV's target applications.

How does the DF3A6.8LFV's 6.0 pF capacitance impact high-speed signal integrity?

The DF3A6.8LFV's 6.0 pF typical terminal capacitance-measured at 0 V and 1 MHz-is low enough to avoid measurable degradation of rise time or eye opening on USB 2.0 (480 Mbps) signals, where channel bandwidth exceeds 200 MHz. This value ensures minimal loading on source-terminated lines and preserves timing margins in differential signaling. Exceeding this capacitance, as seen in alternative devices like the TPD2E001DRYR (12 pF), would introduce unacceptable jitter or attenuation in the DF3A6.8LFV's intended high-speed use cases.

Is the DF3A6.8LFV RoHS compliant and lead-free?

Yes-the DF3A6.8LFV is manufactured in accordance with RoHS Directive 2011/65/EU and is lead-free. Toshiba confirms compliance in its environmental documentation, and the device carries appropriate marking per JEDEC standards. The VESM package uses matte tin termination, and the internal die construction contains no restricted substances above threshold limits. Customers must verify final compliance status using Toshiba's latest material declarations, as referenced in the DF3A6.8LFV product documentation.