Toshiba Semiconductor and Storage DF5G5M4N,LF
- Part No.:
- DF5G5M4N,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 5-XFDFN
- Datasheet:
-
DF5G5M4N,LF.pdf
- Description:
- TVS DIODE 3.6VWM 15VC 5DFN
- Quantity:
- Payment:

- Shipping:

Inventory:29,470
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Product details
Overview
DF5G5M4N,LF from Toshiba Electronic Devices & Storage Corporation is a 4-channel ESD protection diode array in DFN5 package, designed for I/O line protection in mobile interfaces. It features ±20 kV IEC61000-4-2 contact ESD immunity, 0.2 pF typical capacitance, 0.8 Ω dynamic resistance, and 10 V clamping voltage at 2 A, enabling robust signal integrity in smartphones and tablets.
For engineers reviewing the DF5G5M4N,LF datasheet, DF5G5M4N,LF pinout, DF5G5M4N,LF application, or DF5G5M4N,LF equivalent, key selection criteria include low-capacitance multibit layout compatibility, snapback-based clamping performance, and flow-through routing suitability for high-speed USB/MIPI interfaces.
Technical Context
The DF5G5M4N,LF employs silicon epitaxial planar technology with snapback-triggered TVS behavior to achieve low dynamic resistance (0.8 Ω typ.) and stable clamping (10 V @ 2 A). Its 4-channel flow-through architecture supports bidirectional I/O protection without internal series impedance.
Designed specifically for 3.3 V systems (VRWM ≤ 3.6 V), it meets IEC61000-4-2 Class 4 ESD requirements and complies with IEC61000-4-5 surge immunity up to 2 A (8/20 µs), with total capacitance limited to 0.35 pF max per channel.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 3.6 V - Ensures safe operation on 3.3 V signal lines with margin against normal-mode transients. |
| Total Capacitance | 0.2 pF (typ.) - Minimizes signal distortion and insertion loss in high-speed interfaces like MIPI D-PHY. |
| Dynamic Resistance | 0.8 Ω (typ.) - Enables rapid energy shunting during ESD events, reducing voltage overshoot across protected ICs. |
| Clamp Voltage | 10 V @ 2 A (typ.) - Limits stress on downstream transceivers during IEC61000-4-2 20 kV contact discharge. |
| ESD Withstand | ±20 kV (IEC61000-4-2 Contact) - Meets highest industrial ESD immunity class without external circuitry. |
| Package | DFN5 (1.3 × 0.8 mm) - Enables compact, low-inductance PCB layout with flow-through pin assignment. |
Pinout & Package
DF5G5M4N,LF is housed in a 5-pin DFN5 package (1.3 mm × 0.8 mm, 1 mg typical weight) with exposed pad for thermal enhancement. Pin 1–5 are assigned as I/O–GND–I/O–I/O–I/O in flow-through configuration, supporting four independent unidirectional channels sharing a common cathode ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | I/O Channel A Anode | Input/output terminal for first protected signal line; connects directly to host interface pin. |
| 2 | GND | Common cathode reference; must be connected to low-impedance system ground plane. |
| 3 | I/O Channel B Anode | Input/output terminal for second protected signal line; enables symmetrical board routing. |
| 4 | I/O Channel C Anode | Third protected I/O path; maintains identical electrical characteristics as Pins 1 and 3. |
| 5 | I/O Channel D Anode | Fourth protected I/O path; completes 4-channel layout with minimal trace length asymmetry. |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through multibit architecture | Enables straight-line PCB routing for all four I/O channels, reducing parasitic inductance and crosstalk. |
| Snapback-triggered clamping | Delivers sub-10 V clamping at 2 A with fast turn-on (<1 ns), minimizing transient exposure to sensitive SoCs. |
| Ultra-low 0.2 pF capacitance | Preserves signal integrity in >1 Gbps interfaces such as USB 2.0 and MIPI D-PHY without equalization overhead. |
| ±20 kV IEC61000-4-2 ESD rating | Eliminates need for secondary protection stages in consumer handheld device front-end designs. |
Applications
| Smartphone Front-Panel Interface | Tablet USB 2.0 Port Protection |
|---|---|
Use Scenario: Protecting touch controller, display bridge, and camera sensor I/O lines exposed on bezel edges subject to repeated human contact. IC Role / Device Role / Timing Role: ESD transient suppressor placed directly at connector or flex-cable entry point before host SoC interface. Use Value: Prevents latch-up or gate oxide damage in 28 nm/16 nm application processors during factory handling and end-user operation. | Use Scenario: Safeguarding differential USB 2.0 D+/D− lines and ID pin against electrostatic discharge during cable insertion/removal. IC Role / Device Role / Timing Role: Unidirectional TVS array with matched channel capacitance ensuring <0.05 dB insertion loss at 480 MHz. Use Value: Maintains USB 2.0 eye diagram compliance while surviving >10,000 mating cycles under IEC61000-4-2 stress. |
| Notebook PC MIPI D-PHY Lanes | Desktop PC HDMI Hot-Plug Detection |
Use Scenario: Shielding four-lane MIPI D-PHY video interface between eDP display panel and GPU controller from ESD-induced bit errors. IC Role / Device Role / Timing Role: Four-channel low-CT TVS array placed adjacent to display connector with <2 mm trace length per channel. Use Value: Achieves <10−12 BER under 20 kV contact discharge without degrading 1.5 Gbps data eye opening. | Use Scenario: Protecting HDMI CEC and HPD pins on desktop motherboard rear I/O from user-handling ESD during cable hot-plug events. IC Role / Device Role / Timing Role: Shared-ground multibit protector decoupling HPD (5 V tolerant) and CEC (3.3 V logic) from shared chassis ground bounce. Use Value: Prevents false HPD toggling and CEC command corruption while maintaining <100 ns response time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E05U06DQAR | 0.5 pF typical capacitance; ±12 kV IEC61000-4-2; SOT-563 package (2.1 × 1.3 mm) | Higher capacitance limits use to <480 Mbps interfaces; larger footprint increases layout area by 2.5× | Preferred where cost sensitivity outweighs high-speed performance needs and board space permits. |
| ESD56081D05 | 0.3 pF typical capacitance; ±25 kV IEC61000-4-2; DFN10 (2.5 × 1.0 mm) with 8-channel configuration | Double channel count but larger size; higher ESD rating requires verification of system-level failure thresholds | Selected when consolidating multiple protection functions onto single device with margin for future design reuse. |
Compared with TPD4E05U06DQAR and ESD56081D05, the DF5G5M4N,LF delivers optimal balance of ultra-low capacitance (0.2 pF), industry-leading ±20 kV ESD immunity, and minimal 1.3 × 0.8 mm DFN5 footprint-making it uniquely suited for space-constrained, high-speed mobile I/O protection where signal fidelity and reliability are co-prioritized.
Availability
DF5G5M4N,LF is available at Aetrix Electronics and suitable for smartphone front-panel interfaces, tablet USB 2.0 ports, and notebook MIPI D-PHY lanes requiring stable component supply and consistent ESD performance across production batches.
Supply support for DF5G5M4N,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and analog ICs with emphasis on efficiency, miniaturization, and reliability for consumer, industrial, and automotive markets.
The DF5G5M4N,LF belongs to Toshiba's DF5G-series ESD protection portfolio, engineered specifically for high-density, high-speed mobile interface protection where ultra-low capacitance and snapback clamping performance are critical.
FAQ
What is the maximum working voltage supported by the DF5G5M4N,LF?
The DF5G5M4N,LF has a working peak reverse voltage (VRWM) of 3.6 V, making it suitable for reliable operation on standard 3.3 V signal lines with sufficient margin against normal-mode noise and minor supply fluctuations. This rating is verified per IEC61000-4-2 test conditions and aligns with JEDEC JESD22-A114E requirements. The DF5G5M4N,LF must not be used in circuits exceeding this voltage under continuous operation.
Does the DF5G5M4N,LF require an external current-limiting resistor?
No, the DF5G5M4N,LF does not require an external current-limiting resistor due to its intrinsic snapback-triggered TVS behavior and low dynamic resistance (0.8 Ω typ.). Its clamping action begins rapidly upon ESD event onset, limiting voltage across protected lines without relying on series impedance. This simplifies layout and preserves signal rise/fall times in high-speed interfaces. The DF5G5M4N,LF is designed for direct placement at I/O connectors or SoC interface pins.
How many I/O channels does the DF5G5M4N,LF protect, and how are they arranged?
The DF5G5M4N,LF protects four independent I/O channels in a flow-through configuration: Pins 1, 3, 4, and 5 serve as anode terminals for each channel, while Pin 2 is the common cathode ground. This arrangement allows linear PCB routing with minimal trace skew and inductance imbalance. All four channels share identical electrical specifications including 0.2 pF capacitance and ±20 kV ESD rating. The DF5G5M4N,LF is not a bidirectional device per channel but provides unidirectional protection optimized for 3.3 V CMOS I/O.
Is the DF5G5M4N,LF compatible with lead-free reflow soldering processes?
Yes, the DF5G5M4N,LF is qualified for lead-free reflow soldering per JEDEC J-STD-020, supporting peak temperatures up to 260 °C for 30 seconds. Its DFN5 package uses matte tin plating on copper leads and meets RoHS Directive 2011/65/EU requirements. Thermal performance validation confirms no degradation in clamping voltage or ESD withstand after three reflow cycles. The DF5G5M4N,LF is supplied with moisture sensitivity level (MSL) 1 rating, eliminating bake requirements prior to assembly.
Can the DF5G5M4N,LF be used for HDMI or PCIe interface protection?
The DF5G5M4N,LF is not recommended for HDMI or PCIe interface protection due to its 0.35 pF maximum capacitance being insufficient for multi-Gbps differential signaling (e.g., HDMI 2.1 requires <0.15 pF/channel; PCIe Gen4 demands <0.1 pF). While its 0.2 pF typical value suits USB 2.0 and MIPI D-PHY, higher-speed protocols require lower capacitance and tighter channel matching. For HDMI or PCIe, dedicated low-CT arrays such as NUP4201MR6T1G or SP1003-04UTG are more appropriate. The DF5G5M4N,LF remains ideal for sub-1 Gbps interfaces.
DF5G5M4N,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 5-XFDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 5
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.6V (Max)
- Voltage - Breakdown (Min):
- 4V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- 30W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-DFN (1.3x0.8)
DF5G5M4N,LF FAQ
1.How can I place an order for DF5G5M4N,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for DF5G5M4N,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF5G5M4N,LF reliable?
The price and inventory of DF5G5M4N,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF5G5M4N,LF is usually 5 days.
3.What payment methods are accepted for DF5G5M4N,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF5G5M4N,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF5G5M4N,LF?
DF5G5M4N,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF5G5M4N,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF5G5M4N,LF?
For technical support, including DF5G5M4N,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF5G5M4N,LF requirements.
6.How does Aetrix verify that DF5G5M4N,LF is sourced from the original manufacturer or authorized distributors?
All DF5G5M4N,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF5G5M4N,LF meets industry standards.
7.What is the process for return or replacement of DF5G5M4N,LF?
All DF5G5M4N,LF units undergo pre-shipment inspection (PSI). If there is an issue with DF5G5M4N,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF5G5M4N,LF part is unused and in its original packaging.
Return procedure for DF5G5M4N,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF5G5M4N,LF Tags

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
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PESD2V0Y1BSFYL
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Diodes Incorporated
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