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Toshiba Semiconductor and Storage DF5G6M4N,LF
- Part No.:
- DF5G6M4N,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 5-XFDFN
- Datasheet:
-
DF5G6M4N,LF.pdf
- Description:
- TVS DIODE 5.5VWM 15VC 5DFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,439
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Product details
Overview
DF5G6M4N,LF from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for 5 V signal lines in mobile device interfaces. It delivers ±20 kV IEC61000-4-2 contact/air ESD immunity, 0.2 pF typical capacitance, 0.8 Ω dynamic resistance, and 10 V clamping voltage at 2 A, enabling robust protection of high-speed USB, HDMI, and audio interfaces in smartphones and tablets.
For engineers reviewing the DF5G6M4N,LF datasheet, DF5G6M4N,LF pinout, DF5G6M4N,LF application, or DF5G6M4N,LF equivalent, key selection criteria include low-capacitance signal integrity preservation, snapback-based low-clamp performance, multibit flow-through layout compatibility, and DFN5 package integration for space-constrained PCBs.
Technical Context
The DF5G6M4N,LF employs silicon epitaxial planar technology with snapback-triggered TVS operation to achieve low dynamic resistance (0.8 Ω typ.) and stable clamping (10 V @ 2 A). Its multibit architecture integrates four I/O channels sharing a common GND terminal in a single DFN5 package.
Designed specifically for electrostatic discharge suppression-not voltage regulation-it operates within a 5.5 V working peak reverse voltage (VRWM) and supports transient pulse handling per IEC61000-4-2 (±20 kV) and IEC61000-4-5 (8/20 µs, 30 W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 5.5 V maximum - ensures safe operation on 5 V signal rails without leakage or false triggering |
| Ct | 0.2 pF typical - preserves signal integrity for high-speed interfaces up to 1 GHz |
| RDYN | 0.8 Ω typical - minimizes voltage overshoot during ESD events by limiting IR drop |
| VESD | ±20 kV (IEC61000-4-2 Contact/Air) - meets highest industrial ESD immunity requirements |
| VC @ IPP=2 A | 10 V typical - clamps transients below IC damage thresholds for protected SoCs and PMICs |
| Package | DFN5 (1.3 mm × 0.8 mm) - enables ultra-compact placement adjacent to connectors and ICs |
Pinout & Package
DF5G6M4N,LF uses a 5-pin DFN5 surface-mount package with exposed thermal pad (not electrically connected), measuring 1.3 mm × 0.8 mm × 0.4 mm (typ.). The flow-through layout simplifies PCB routing with input/output pins aligned linearly across the package body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | I/O Channel A | ESD-protected bidirectional signal line (e.g., USB D+) |
| 2 | GND | Common reference and transient return path for all channels |
| 3 | I/O Channel B | ESD-protected bidirectional signal line (e.g., USB D−) |
| 4 | I/O Channel C | ESD-protected bidirectional signal line (e.g., HDMI TMDS+) |
| 5 | I/O Channel D | ESD-protected bidirectional signal line (e.g., HDMI TMDS−) |
Key Features
| Feature | Design Value |
|---|---|
| Multibit flow-through configuration | Four independent I/O channels with shared GND enable straight-line PCB trace routing and reduce loop inductance |
| Snapback-triggered clamping | Enables sub-10 V clamping at 2 A while maintaining low dynamic resistance for fast transient suppression |
| Ultra-low 0.2 pF capacitance | Minimizes signal distortion and insertion loss on high-speed differential pairs (e.g., USB 2.0, HDMI 1.4) |
| ±20 kV IEC61000-4-2 ESD rating | Exceeds Level 4 immunity requirements for handheld consumer electronics without derating |
Applications
| USB 2.0 Interface Protection | HDMI 1.4 Signal Line Protection |
|---|---|
Use Scenario: Protecting USB D+/D− lines in smartphone charging ports against repeated human-body-model ESD events. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed between connector and SoC PHY. Use Value: 0.2 pF capacitance prevents signal rise-time degradation; 10 V clamping prevents PHY latch-up or oxide breakdown. | Use Scenario: Safeguarding HDMI TMDS+ and TMDS− differential pairs in tablet display interfaces from cable-discharge events. IC Role / Device Role / Timing Role: Four-channel ESD clamp integrated directly at HDMI receptacle footprint. Use Value: Flow-through pinout allows direct in-line routing; 0.8 Ω RDYN ensures minimal voltage overshoot during 2 A transients. |
| Smartphone Audio Jack Protection | Tablet MicroSD Card Interface Protection |
Use Scenario: Shielding 3.5 mm TRRS audio jack contacts (MIC, L/R, GND) from ESD during plug insertion/removal. IC Role / Device Role / Timing Role: Multibit TVS array protecting four analog signal paths with shared ground reference. Use Value: Low leakage (<0.1 µA) avoids DC bias shift; 5.5 V VRWM accommodates audio rail headroom. | Use Scenario: Preventing ESD-induced corruption or reset of microSD card command/data lines in portable computing devices. IC Role / Device Role / Timing Role: ESD suppressor placed between SD card slot and host controller's CMD/DAT0–DAT3 lines. Use Value: Four-channel integration reduces component count vs. discrete diodes; DFN5 footprint saves >60% board area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E001DRYR | 0.5 pF Ct, 12 V VC @ 2 A, SOT-553 package (2.1 mm × 1.3 mm) | Larger footprint; higher capacitance limits use to lower-speed interfaces (≤480 Mbps) | Preferred when legacy SOT-553 assembly infrastructure exists and 0.5 pF is acceptable |
| ESD56081D05-2/TR | 0.18 pF Ct, 9.5 V VC @ 2 A, DFN10 (2.0 mm × 1.25 mm) with 10-pin layout | Higher pin count supports 8-channel protection; larger size increases routing complexity | Selected when expanding to 8-line protection or requiring tighter clamping tolerance |
Compared with TPD4E001DRYR and ESD56081D05-2/TR, the DF5G6M4N,LF offers optimal balance of ultra-low capacitance, compact DFN5 size, and proven 4-channel flow-through layout-making it ideal for next-gen mobile interface designs where board space and signal fidelity are critical.
Availability
DF5G6M4N,LF is available at Aetrix Electronics and suitable for smartphone interface protection, tablet HDMI safeguarding, and notebook PC USB port hardening requiring stable component supply and consistent ESD performance across production lots.
Supply support for DF5G6M4N,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures power semiconductors, logic ICs, and protection devices with focus on reliability, efficiency, and miniaturization for consumer and industrial systems.
The DF5G6M4N,LF belongs to Toshiba's DFN-series ESD protection portfolio, engineered specifically for high-density mobile interfaces where low capacitance, multibit integration, and snapback clamping performance are mandatory.
FAQ
What is the maximum working peak reverse voltage (VRWM) specification for DF5G6M4N,LF?
The DF5G6M4N,LF has a VRWM of 5.5 V maximum, meaning it reliably blocks reverse voltages up to this level under normal operating conditions. This rating ensures compatibility with standard 5 V signal rails while preventing premature conduction or leakage. The DF5G6M4N,LF maintains low reverse current (<0.1 µA at 5.5 V) and stable clamping behavior only when triggered by ESD events exceeding its breakdown threshold.
Does DF5G6M4N,LF support IEC61000-4-2 Level 4 ESD immunity?
Yes, the DF5G6M4N,LF is rated for ±20 kV contact and ±20 kV air discharge per IEC61000-4-2, which exceeds Level 4 requirements (±15 kV contact / ±15 kV air). This performance is verified through standardized testing and reflects the device's snapback-triggered TVS architecture. The DF5G6M4N,LF achieves this without external bias or control circuitry, operating autonomously during transient events.
How many signal lines does DF5G6M4N,LF protect, and what is its pin configuration?
The DF5G6M4N,LF protects four independent signal lines using a 5-pin configuration: pins 1, 3, 4, and 5 serve as I/O terminals for separate channels, while pin 2 is the shared GND terminal. This flow-through arrangement aligns inputs and outputs linearly to simplify PCB layout. The DF5G6M4N,LF does not require channel-specific grounding or decoupling capacitors due to its monolithic structure.
What is the typical dynamic resistance (RDYN) of DF5G6M4N,LF, and why does it matter?
The DF5G6M4N,LF exhibits a typical dynamic resistance of 0.8 Ω, measured via TLP analysis between 8 A and 16 A. This low RDYN minimizes the voltage overshoot (ΔV = RDYN × IPP) during fast ESD pulses, ensuring clamped voltage stays near 10 V at 2 A. For the DF5G6M4N,LF, this directly translates to reliable protection of sensitive 1.8 V/3.3 V I/O cells without overstress.
Is DF5G6M4N,LF compatible with lead-free reflow soldering processes?
Yes, the DF5G6M4N,LF is qualified for lead-free reflow soldering per JEDEC J-STD-020, supporting peak temperatures up to 260 °C. Its DFN5 package features matte tin plating and complies with RoHS Directive 2011/65/EU. The DF5G6M4N,LF's thermal performance remains stable across standard reflow profiles, with no degradation in ESD parameters or leakage characteristics post-assembly.
DF5G6M4N,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 5-XFDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 5
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 5.6V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- 30W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-DFN (1.3x0.8)
DF5G6M4N,LF FAQ
1.How can I place an order for DF5G6M4N,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for DF5G6M4N,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF5G6M4N,LF reliable?
The price and inventory of DF5G6M4N,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF5G6M4N,LF is usually 5 days.
3.What payment methods are accepted for DF5G6M4N,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF5G6M4N,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF5G6M4N,LF?
DF5G6M4N,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF5G6M4N,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF5G6M4N,LF?
For technical support, including DF5G6M4N,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF5G6M4N,LF requirements.
6.How does Aetrix verify that DF5G6M4N,LF is sourced from the original manufacturer or authorized distributors?
All DF5G6M4N,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF5G6M4N,LF meets industry standards.
7.What is the process for return or replacement of DF5G6M4N,LF?
All DF5G6M4N,LF units undergo pre-shipment inspection (PSI). If there is an issue with DF5G6M4N,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF5G6M4N,LF part is unused and in its original packaging.
Return procedure for DF5G6M4N,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF5G6M4N,LF Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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