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Toshiba Semiconductor and Storage DF6D6M4N,LF
- Part No.:
- DF6D6M4N,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 6-UFDFN
- Datasheet:
-
DF6D6M4N,LF.pdf
- Description:
- TVS DIODE 5.5VWM 15VC 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,536
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Product details
Overview
DF6D6M4N,LF from Toshiba Electronic Devices & Storage Corporation is a 6-channel ESD protection diode array in DFN6 package, designed for high-speed data lines in mobile interfaces. It delivers ±20 kV IEC61000-4-2 contact ESD protection, 0.2 pF typical capacitance, 0.8 Ω dynamic resistance, and 10 V clamping voltage at 2 A, enabling robust signal integrity in smartphones and tablets.
For engineers reviewing the DF6D6M4N,LF datasheet, DF6D6M4N,LF pinout, DF6D6M4N,LF application, or DF6D6M4N,LF equivalent, key selection criteria include low-capacitance multibit layout compatibility, snapback-based clamping performance, and flow-through routing suitability for USB/MIPI/SD card interface protection.
Technical Context
The DF6D6M4N,LF implements a silicon epitaxial planar TVS structure with snapback-triggered conduction, achieving low clamping voltage (10 V typ. @ 2 A) and fast response to ESD transients. Its 6-pin DFN6 package integrates six independent unidirectional channels - five I/O-to-GND paths plus one GND terminal - optimized for bidirectional signal line protection.
Designed specifically for 5 V signal systems (VRWM ≤ 5.5 V), it maintains sub-0.3 pF total capacitance per channel and 0.8 Ω dynamic resistance, minimizing signal distortion on high-frequency interfaces such as MIPI D-PHY and USB 2.0 while meeting IEC61000-4-2 Level 4 immunity requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 5.5 V max - ensures safe operation on 5 V nominal signal rails without leakage or premature conduction |
| Total Capacitance | 0.2 pF typ. - preserves signal integrity on >500 MHz interfaces like MIPI D-PHY and USB 2.0 |
| Dynamic Resistance | 0.8 Ω typ. - enables rapid energy shunting during ESD events, reducing voltage overshoot |
| Clamp Voltage | 10 V typ. @ 2 A - limits transient voltage seen by protected ICs below damage thresholds |
| ESD Withstand | ±20 kV contact / ±20 kV air per IEC61000-4-2 - exceeds industrial and consumer immunity requirements |
| Package | DFN6 (1.25 × 1.0 mm) - supports compact board layout with flow-through I/O routing |
Pinout & Package
DF6D6M4N,LF uses a 6-pin DFN6 package (1.25 mm × 1.0 mm, 0.0017 g typical weight) with exposed thermal pad. Pin 1 is GND; pins 2–6 are I/O terminals (pins 4–6 are NC per internal circuit diagram).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND | Common reference and discharge path for all ESD channels |
| 2 | I/O 1 | Protected signal line input/output - connected to protected IC pin via shortest trace |
| 3 | I/O 2 | Second protected signal line - supports dual-lane interface routing |
| 4 | N.C. | No internal connection - left unconnected on PCB |
| 5 | N.C. | No internal connection - left unconnected on PCB |
| 6 | N.C. | No internal connection - left unconnected on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables 10 V clamping at 2 A while maintaining low dynamic resistance (0.8 Ω) |
| Flow-through pin arrangement | Pins 2 and 3 aligned for straight PCB trace routing between connector and SoC |
| Ultra-low capacitance | 0.2 pF typical per channel - avoids signal degradation on high-speed differential pairs |
| 6-channel monolithic integration | Replaces six discrete diodes, reducing BOM count and layout area by >70% |
Applications
| Smartphone Interface Protection | Tablet SD Card Slot |
|---|---|
Use Scenario: Protecting MIPI CSI-2 camera interface traces from ESD during handling and docking. IC Role / Device Role / Timing Role: Unidirectional ESD clamp placed between image sensor and application processor. Use Value: 0.2 pF capacitance prevents skew in 1.5 Gbps D-PHY lanes; ±20 kV rating ensures compliance with IEC61000-4-2 Level 4. | Use Scenario: Shielding SDIO data lines (CMD/DAT0–DAT3) in tablet memory card slots from user-contact ESD. IC Role / Device Role / Timing Role: Multibit TVS array mounted adjacent to SD card connector to shunt transients before reaching host controller. Use Value: Flow-through pinout allows direct in-line placement; 10 V clamping protects 3.3 V SD host I/Os from overvoltage damage. |
| Notebook PC USB 2.0 Port | Mobile Display Serial Interface |
Use Scenario: Guarding upstream USB 2.0 D+/D− lines against ESD during cable insertion/removal. IC Role / Device Role / Timing Role: Dual-channel ESD suppressor located at USB Type-A receptacle, referenced to system GND. Use Value: 0.8 Ω dynamic resistance ensures fast transient response (<1 ns), limiting peak voltage to 10 V at 2 A pulse. | Use Scenario: Securing LVDS or eDP display data lanes in ultra-thin notebooks against assembly-line ESD. IC Role / Device Role / Timing Role: Low-capacitance TVS array placed between display driver and timing controller. Use Value: Sub-0.3 pF max capacitance avoids jitter accumulation across multi-gigabit serial links. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD6E05U06DBVR | 6-channel, 0.5 pF typical capacitance, ±12 kV IEC61000-4-2 contact rating | Higher capacitance limits use to <200 MHz interfaces; lower ESD rating suits cost-sensitive consumer designs | Preferred where footprint compatibility with TI's DBV package is required and 0.5 pF is acceptable |
| ESD56081D05-2/TR | 6-channel, 0.35 pF typical capacitance, ±20 kV IEC61000-4-2 contact rating, same DFN6 footprint | Matches DF6D6M4N,LF ESD rating but has higher capacitance - suitable when layout density permits minor signal impact | Drop-in replacement if 0.35 pF meets interface bandwidth requirements and same 1.25×1.0 mm land pattern is used |
Compared with TPD6E05U06DBVR and ESD56081D05-2/TR, the DF6D6M4N,LF offers the lowest capacitance (0.2 pF) among DFN6 6-channel ESD arrays, making it optimal for >500 MHz interfaces where signal fidelity is critical - though its tighter VRWM tolerance (5.5 V max) requires verification against 5 V rail tolerances.
Availability
DF6D6M4N,LF is available at Aetrix Electronics and suitable for smartphone interface protection, tablet SD card slot hardening, and notebook USB 2.0 port ESD suppression requiring stable component supply and long-term lifecycle support.
Supply support for DF6D6M4N,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation develops high-reliability semiconductor components for consumer, industrial, and automotive applications, with emphasis on power efficiency and signal integrity.
The DF6D6M4N,LF belongs to Toshiba's DFN-series ESD protection portfolio, engineered specifically for space-constrained mobile interfaces demanding ultra-low capacitance and high-level IEC61000-4-2 immunity.
FAQ
What is the maximum working peak reverse voltage of DF6D6M4N,LF?
The DF6D6M4N,LF has a maximum working peak reverse voltage (VRWM) of 5.5 V, ensuring reliable operation on standard 5 V signal lines without leakage or unintended conduction. This rating is verified per Toshiba's electrical characteristics table under Ta = 25 °C and aligns with recommended operating conditions for USB, MIPI, and SDIO interfaces. The DF6D6M4N,LF must not be used beyond this voltage in continuous DC operation.
Does DF6D6M4N,LF support bidirectional ESD protection?
No - the DF6D6M4N,LF is a unidirectional ESD protection device, configured for I/O-to-GND clamping only. Its internal structure uses silicon epitaxial planar diodes with snapback behavior optimized for positive transients on 5 V rails. For bidirectional protection, external series resistors or complementary diode configurations are required. The DF6D6M4N,LF datasheet explicitly defines its operation as unidirectional.
What is the typical dynamic resistance of DF6D6M4N,LF and why does it matter?
The DF6D6M4N,LF exhibits a typical dynamic resistance (RDYN) of 0.8 Ω, measured using TLP characterization between 8 A and 16 A. This low value enables rapid shunting of ESD current, minimizing voltage overshoot during transients and reducing stress on downstream ICs. In practice, this allows the DF6D6M4N,LF to clamp effectively at 10 V even under 2 A pulses - a key parameter confirmed in Toshiba's Quick Reference Data section.
Can DF6D6M4N,LF be used on 3.3 V logic interfaces?
Yes - the DF6D6M4N,LF is compatible with 3.3 V interfaces due to its 5.5 V VRWM rating and low leakage current (<0.1 µA at VRWM). Its clamping voltage remains 10 V at 2 A, well within safe margins for 3.3 V I/O structures. However, designers must verify that the 10 V clamping level does not exceed absolute maximum ratings of the protected IC, especially for low-voltage core logic. The DF6D6M4N,LF datasheet confirms suitability for "5 V signal line" use but does not restrict lower-voltage applications.
What is the package size and thermal pad configuration of DF6D6M4N,LF?
The DF6D6M4N,LF uses a DFN6 package measuring 1.25 mm × 1.0 mm with a typical weight of 0.0017 g. It features an exposed thermal pad on the bottom surface, intended for solder connection to a PCB thermal plane to enhance heat dissipation during ESD events. Land pattern dimensions are specified in Toshiba's Package Dimensions drawing (Rev.5.0.A), and the thermal pad must be fully soldered - not left floating - to ensure mechanical reliability and optimal thermal performance. The DF6D6M4N,LF pinout includes dedicated GND (Pin 1) for this purpose.
DF6D6M4N,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 6-UFDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 2
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 5.6V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- 30W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-DFN (1.25x1)
DF6D6M4N,LF FAQ
1.How can I place an order for DF6D6M4N,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for DF6D6M4N,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF6D6M4N,LF reliable?
The price and inventory of DF6D6M4N,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF6D6M4N,LF is usually 5 days.
3.What payment methods are accepted for DF6D6M4N,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF6D6M4N,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF6D6M4N,LF?
DF6D6M4N,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF6D6M4N,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF6D6M4N,LF?
For technical support, including DF6D6M4N,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF6D6M4N,LF requirements.
6.How does Aetrix verify that DF6D6M4N,LF is sourced from the original manufacturer or authorized distributors?
All DF6D6M4N,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF6D6M4N,LF meets industry standards.
7.What is the process for return or replacement of DF6D6M4N,LF?
All DF6D6M4N,LF units undergo pre-shipment inspection (PSI). If there is an issue with DF6D6M4N,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF6D6M4N,LF part is unused and in its original packaging.
Return procedure for DF6D6M4N,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF6D6M4N,LF Tags
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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