Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage DF6D7M1N,LF

Part No.:
DF6D7M1N,LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
TVS Diodes
Package:
6-UFDFN
Datasheet:
AetrixDF6D7M1N,LF.pdf
Description:
TVS DIODE 5VWM 12VC 6DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,998

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DF6D7M1N,LF from Toshiba Electronic Devices & Storage Corporation is a unidirectional ESD protection diode array in DFN6 package, designed for high-speed data line protection with 6 V working peak reverse voltage, ±8 kV IEC61000-4-2 contact ESD immunity, and 0.5 pF typical total capacitance. It serves as a transient voltage suppressor on USB 2.0, HDMI, or audio interface lines.

For engineers reviewing the DF6D7M1N,LF datasheet, DF6D7M1N,LF pinout, DF6D7M1N,LF application, or DF6D7M1N,LF equivalent, key selection criteria include clamp voltage at 1 A (≤12 V), dynamic resistance (≤0.9 Ω), low capacitance for signal integrity, and DFN6 footprint compatibility with space-constrained PCB layouts.

Technical Context

The DF6D7M1N,LF integrates two independent ESD protection channels in a single DFN6 package, each featuring a silicon epitaxial planar structure optimized for fast response to electrostatic transients. Its clamping behavior follows IEC61000-4-5 8/20 µs pulse conditions, with guaranteed VC ≤12 V at IPP = 1 A.

Dynamic resistance is characterized via TLP testing (Z₀ = 50 Ω, tp = 100 ns) across 3–8 A, yielding ≤0.9 Ω typical value-critical for minimizing voltage overshoot during ESD events. Total capacitance of 0.5 pF (typ.) at VR = 0 V, f = 1 MHz ensures minimal signal distortion on high-frequency interfaces.

Key Specifications

ParameterValue and Actual Design Meaning
Working Peak Reverse Voltage6 V - maximum continuous DC or AC peak voltage the device blocks without leakage degradation
ESD Withstand (IEC61000-4-2)±8 kV contact - verified immunity level for human-body-model-like discharges on protected lines
Clamp Voltage (IPP = 1 A)≤12 V - peak voltage seen by downstream IC during 1 A ESD pulse, limiting stress on connected logic
Total Capacitance0.5 pF (typ.) at 0 V, 1 MHz - enables use on USB 2.0 (480 Mbps) and other high-speed digital interfaces
Dynamic Resistance≤0.9 Ω - low impedance during transient conduction reduces clamping voltage rise rate and overshoot
Junction Temperature Range−55 °C to +150 °C - supports operation in automotive under-hood and industrial control environments

Pinout & Package

DF6D7M1N,LF is housed in a 1.6 × 1.6 × 0.55 mm DFN6 package with exposed thermal pad (no internal connection). The package supports reflow soldering per JEDEC J-STD-020 and provides low-inductance paths for ESD current diversion.

Pin/TerminalCircuit RoleDesign Meaning
1GNDCommon cathode reference and primary ESD current return path to system ground plane
2I/O 1Protected input/output line 1 - connects to high-speed signal trace requiring ESD hardening
3I/O 2Protected input/output line 2 - independent channel for dual-line protection (e.g., D+ and D−)
4NCNo internal connection - must be left floating or tied to GND per layout best practice
5NCNo internal connection - must be left floating or tied to GND per layout best practice
6NCNo internal connection - must be left floating or tied to GND per layout best practice

Key Features

FeatureDesign Value
Ultra-low capacitance0.5 pF typical - preserves signal edge rate and eye diagram integrity on 480 Mbps USB 2.0 links
Low dynamic resistance≤0.9 Ω - minimizes voltage overshoot during fast-rising ESD transients (e.g., <1 ns rise time)
IEC61000-4-2 certified±8 kV contact discharge - meets industrial and consumer equipment immunity requirements
Space-efficient DFN61.6 × 1.6 mm footprint - saves >60% board area vs. SOIC-8 alternatives while enabling automated placement

Applications

USB 2.0 Interface ProtectionHDMI DDC Line Protection

Use Scenario: Protecting D+ and D− differential pair in portable USB peripherals against user-handling ESD events.

IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed immediately before USB connector, shunting ESD current to GND.

Use Value: 0.5 pF capacitance prevents signal attenuation and jitter increase, maintaining full 480 Mbps compliance.

Use Scenario: Safeguarding HDMI Display Data Channel (DDC) SDA/SCL lines from ESD during cable hot-plug operations.

IC Role / Device Role / Timing Role: Unidirectional clamping diode array referenced to system GND, absorbing contact-discharge transients.

Use Value: ≤12 V clamp voltage ensures DDC logic levels remain within I²C specification limits during ±8 kV events.

Smartphone Audio Jack ProtectionIndustrial Sensor Interface Protection

Use Scenario: Shielding 3.5 mm TRRS audio jack MIC and HP_L/HP_R lines from user-induced ESD in handheld devices.

IC Role / Device Role / Timing Role: Dual-channel ESD suppressor with independent I/O pins, grounded cathode configuration.

Use Value: Low leakage (<0.5 µA at 5 V) avoids DC bias shift on analog audio paths, preserving SNR.

Use Scenario: Hardening RS-485 or CAN FD transceiver I/O pins in factory automation nodes exposed to maintenance personnel ESD.

IC Role / Device Role / Timing Role: Standoff protection device mounted at connector entry point, diverting transients before signal conditioning circuitry.

Use Value: −55 °C to +150 °C operating range ensures reliability in uncontrolled ambient industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TPD2E001DRYR0.8 pF capacitance, ±8 kV IEC61000-4-2, SOT-553 package (1.6 × 1.6 mm same footprint)Higher capacitance limits use to ≤100 Mbps interfaces; lacks guaranteed dynamic resistance specSelect when footprint compatibility is critical and signal bandwidth <100 Mbps
ESD56081D05-2/TR0.35 pF capacitance, ±15 kV IEC61000-4-2, DFN6 package, but higher VRWM (5.5 V)Lower VRWM restricts use to 3.3 V or lower systems; superior ESD rating for harsh environmentsSelect for ultra-high-speed interfaces (e.g., MIPI D-PHY) where sub-0.4 pF is mandatory

Compared with TPD2E001DRYR and ESD56081D05-2/TR, DF6D7M1N,LF offers optimal balance of 0.5 pF capacitance, 6 V VRWM headroom for 5 V systems, and validated ≤0.9 Ω dynamic resistance-making it preferred for USB 2.0 and industrial DDC protection where signal fidelity and robust clamping are jointly required.

Availability

DF6D7M1N,LF is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI DDC line hardening, and industrial sensor interface safeguarding requiring stable component supply and long-term production continuity.

Supply support for DF6D7M1N,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and miniaturization.

The DF6D7M1N,LF belongs to Toshiba's ESD protection diode family engineered specifically for high-speed digital interface protection-prioritizing ultra-low capacitance, precise clamping, and compact DFN packaging for modern portable and industrial electronics.

FAQ

What is the maximum working voltage supported by DF6D7M1N,LF?

The DF6D7M1N,LF has a working peak reverse voltage (VRWM) of 6 V, meaning it reliably blocks up to 6 V DC or peak AC signals without significant leakage. This makes DF6D7M1N,LF suitable for protecting 5 V logic interfaces such as USB 2.0 and HDMI DDC, where margin above nominal rail is essential for noise immunity and tolerance to voltage ripple.

Does DF6D7M1N,LF meet IEC61000-4-2 ESD immunity standards?

Yes, DF6D7M1N,LF is rated for ±8 kV contact discharge per IEC61000-4-2, with no functional or parametric degradation observed after testing. This certification is explicitly guaranteed in Toshiba's datasheet Rev. 5.0 and applies to both I/O 1 and I/O 2 channels independently, confirming DF6D7M1N,LF's suitability for end-equipment compliance testing.

What is the typical total capacitance of DF6D7M1N,LF and why does it matter?

DF6D7M1N,LF exhibits 0.5 pF typical total capacitance at 0 V and 1 MHz. This ultra-low value is critical for preserving signal integrity on high-speed interfaces: it minimizes insertion loss and maintains eye opening on USB 2.0 (480 Mbps) links, directly enabling DF6D7M1N,LF's deployment without degrading data transmission performance.

Can DF6D7M1N,LF be used for bidirectional signal lines like USB D+ and D−?

Yes, DF6D7M1N,LF is configured as a dual unidirectional diode array with common cathode (GND), allowing independent clamping of positive transients on I/O 1 and I/O 2 to ground. This architecture supports bidirectional data lines such as USB D+ and D−, where each line requires separate low-capacitance ESD suppression-exactly the function implemented by DF6D7M1N,LF.

What is the thermal limit and package type of DF6D7M1N,LF?

DF6D7M1N,LF uses a DFN6 package measuring 1.6 × 1.6 × 0.55 mm with an operating junction temperature range of −55 °C to +150 °C. Its 0.0017 g typical weight and exposed pad design support efficient heat dissipation during repeated ESD events, making DF6D7M1N,LF appropriate for thermally demanding industrial and automotive under-dash applications.

DF6D7M1N,LF Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Package/Case:
6-UFDFN
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
2
Voltage - Reverse Standoff (Typ):
5V (Max)
Voltage - Breakdown (Min):
6V
Voltage - Clamping (Max) @ Ipp:
12V (Typ)
Current - Peak Pulse (10/1000µs):
1A (8/20µs)
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
0.3pF @ 1MHz
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-DFN (1.25x1)

DF6D7M1N,LF FAQ

1.How can I place an order for DF6D7M1N,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for DF6D7M1N,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DF6D7M1N,LF reliable?

The price and inventory of DF6D7M1N,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF6D7M1N,LF is usually 5 days.

3.What payment methods are accepted for DF6D7M1N,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF6D7M1N,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DF6D7M1N,LF?

DF6D7M1N,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DF6D7M1N,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DF6D7M1N,LF?

For technical support, including DF6D7M1N,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF6D7M1N,LF requirements.

6.How does Aetrix verify that DF6D7M1N,LF is sourced from the original manufacturer or authorized distributors?

All DF6D7M1N,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF6D7M1N,LF meets industry standards.

7.What is the process for return or replacement of DF6D7M1N,LF?

All DF6D7M1N,LF units undergo pre-shipment inspection (PSI). If there is an issue with DF6D7M1N,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DF6D7M1N,LF part is unused and in its original packaging.

Return procedure for DF6D7M1N,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DF6D7M1N,LF Tags

  • DF6D7M1N,LF
  • DF6D7M1N,LF PDF
  • DF6D7M1N,LF Datasheet
  • DF6D7M1N,LF Specifications
  • DF6D7M1N,LF Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage DF6D7M1N,LF
  • Buy DF6D7M1N,LF
  • DF6D7M1N,LF Price
  • DF6D7M1N,LF Distributor
  • DF6D7M1N,LF Supplier
  • DF6D7M1N,LF Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER