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Analog Devices Inc./Maxim Integrated DS9502P+
- Part No.:
- DS9502P+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- TVS Diodes
- Package:
- 6-SMD, J-Lead
- Datasheet:
-
DS9502P+.pdf
- Description:
- TVS DIODE 7.5VWM 6TSOC
- Quantity:
- Payment:
- Shipping:
Inventory:6,515
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Product details
Overview
DS9502P+ from Dallas Semiconductor (now Maxim Integrated) is a symmetric dual-port bidirectional ESD protection diode designed for I/O line hardening in SRAM-based battery-buffered portable memory modules. It features 7.5V Zener clamping, 9.5V typical trigger voltage, 5.5V holding voltage, 2.0A peak pulse current, and 55pF junction capacitance at 5V - enabling robust ±27kV IEC 801-2 ESD protection without signal attenuation.
For engineers reviewing the DS9502P+ datasheet, DS9502P+ pinout, DS9502P+ application, or DS9502P+ equivalent, key selection considerations include snapback-triggered low-clamping behavior, TSOC package inductance suitability for high-speed memory buses, symmetric dual-port energy dissipation architecture, and compatibility with 5V logic families in space-constrained portable designs.
Technical Context
The DS9502P+ implements a Zener-based snapback clamping mechanism: above 9.0–9.5V trigger voltage, it transitions to low-impedance conduction at ≤5.5V holding voltage while sustaining ≥30mA holding current. Its symmetric dual-port bondout (pins 1&6 and 2&5 internally tied) enables balanced transient energy sharing across both I/O paths.
Designed specifically for SRAM module I/O protection, the device operates over –40°C to +85°C, exhibits ≤100nA leakage at 7.0V, and maintains 55pF capacitance at 5V bias - minimizing signal distortion on memory data/address lines while delivering 27kV IEC 801-2 system-level ESD immunity when paired with already-protected memory chips.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Trigger Voltage | 9.0–9.5V typical; initiates snapback clamping before downstream memory I/O damage thresholds are exceeded. |
| Holding Voltage | 5.5V max; sustains low-voltage clamping during ESD event to limit stress on protected SRAM pins. |
| Peak Pulse Current | 2.0A; handles IEC 801-2 contact discharge transients without thermal runaway. |
| Junction Capacitance | 55pF at 5V; preserves signal integrity on high-speed memory bus traces. |
| Leakage Current | ≤100nA at 7.0V; avoids DC loading of 5V logic I/O lines during normal operation. |
| Avalanche Voltage | 7.4–7.8V; defines Zener breakdown threshold for steady-state overvoltage limiting. |
| Operating Temp | –40°C to +85°C; supports industrial-grade portable memory module deployment. |
Pinout & Package
DS9502P+ is housed in a 6-lead TSOC surface-mount package (3.7 × 4.0 × 1.5 mm), optimized for low parasitic inductance and compact PCB layout in memory module edge connectors.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 & 6 | Anode Port A | Internally tied; forms one symmetric bidirectional I/O port for data/address line protection. |
| 2 & 5 | Anode Port B | Internally tied; forms second symmetric bidirectional I/O port, enabling balanced energy dissipation. |
| 3 & 4 | Cathode | Common cathode node; referenced to system ground or VCC rail for clamping path. |
Key Features
| Feature | Design Value |
|---|---|
| Zener snapback clamping | Transitions from high-impedance to low-voltage conduction at 9.5V, limiting transient stress to ≤5.5V on protected lines. |
| Symmetric dual-port bondout | Pins 1&6 and 2&5 are internally paired, distributing ESD energy equally across two I/O paths to prevent localized thermal failure. |
| Low 55pF junction capacitance | Minimizes signal rise-time degradation and reflection on 5V memory bus interfaces up to ~100 MHz. |
| Industrial temperature range | Guaranteed operation from –40°C to +85°C supports battery-buffered memory in portable industrial handhelds and medical devices. |
| 5V logic family compatibility | Clamping and leakage characteristics align with TTL, CMOS, and LVTTL I/O voltage tolerances without level-shifting circuitry. |
Applications
| Portable SRAM Memory Modules | Industrial Handheld Terminals |
|---|---|
Use Scenario: Battery-buffered SRAM modules used in point-of-sale terminals and data loggers require fail-safe ESD protection beyond built-in IC-level structures. IC Role / Device Role / Timing Role: DS9502P+ acts as secondary external clamping diode on memory data/address lines, triggered only during >27kV IEC 801-2 events. Use Value: Prevents catastrophic short-failure of SRAM I/O cells by clamping transients to ≤5.5V while maintaining <100nA standby leakage. | Use Scenario: Ruggedized handheld scanners operate in electrostatic-prone warehouse environments with frequent cable hot-plug and operator handling. IC Role / Device Role / Timing Role: DS9502P+ protects UART, SPI, and GPIO lines connected to memory-mapped peripherals against contact ESD. Use Value: Symmetric dual-port layout ensures equal energy sharing between bidirectional data lines, avoiding single-point thermal overstress during repeated ESD strikes. |
| Medical Data Recorders | Embedded Telematics Units |
Use Scenario: Portable ECG and patient monitor recorders store critical waveform data in nonvolatile SRAM with battery backup. IC Role / Device Role / Timing Role: DS9502P+ provides last-line defense on memory interface lines where internal ESD structures may be compromised by aging or process variation. Use Value: Snapback behavior guarantees rapid transition to low-clamp state, reducing transient duration below memory cell upset thresholds. | Use Scenario: Automotive telematics control units use SRAM buffers for GPS/IMU sensor fusion data prior to flash storage. IC Role / Device Role / Timing Role: DS9502P+ guards memory expansion interfaces exposed to vehicle chassis-ground transients and connector mating noise. Use Value: 75K/W junction-to-case thermal resistance enables reliable power dissipation during multi-pulse ESD events in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMF5.0AT1G | Unidirectional, 5.0V standoff, 14.5V VBR, 100pF CJ at 0V | Lacks symmetric dual-port architecture and snapback; suited for single-rail power-line protection, not bidirectional I/O | Select only if protecting unidirectional supply rails rather than bidirectional memory data lines. |
| TPD2E001DRYR | 2-channel bidirectional, 5.5V VRWM, 12pF CJ at 0V, no snapback | Lower capacitance but higher trigger voltage (12V); clamps at higher voltage, risking memory I/O damage | Prefer for high-speed USB/USB2.0 lines; avoid where sub-6V clamping is required for SRAM I/O safety margin. |
Compared with SMF5.0AT1G and TPD2E001DRYR, the DS9502P+ uniquely delivers bidirectional snapback clamping at ≤5.5V with symmetric dual-port energy sharing - making it irreplaceable for legacy 5V SRAM module I/O protection where low-voltage clamping and thermal balance are mandatory.
Availability
DS9502P+ is available at Aetrix Electronics and suitable for portable SRAM memory modules, industrial handheld terminals, and medical data recorders requiring stable component supply with guaranteed long-term availability and traceable sourcing.
Supply support for DS9502P+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Dallas Semiconductor, acquired by Maxim Integrated in 2001, specialized in precision analog, mixed-signal, and protection ICs for industrial and embedded systems.
The DS9502P+ belongs to Dallas' ESD protection diode product line, engineered specifically to augment built-in memory I/O protection in battery-backed portable modules with fail-safe snapback clamping.
FAQ
What is the clamping voltage behavior of the DS9502P+ during an ESD event?
The DS9502P+ exhibits Zener snapback clamping: when voltage exceeds 9.0–9.5V, it transitions to a low-impedance state with ≤5.5V holding voltage. This behavior sustains as long as current remains above 30mA, ensuring protected lines never exceed 5.5V during IEC 801-2 transients. The DS9502P+ remains in snapback until current falls below the holding threshold, then reverts to high-impedance Zener mode.
How does the symmetric dual-port structure of the DS9502P+ improve ESD robustness?
The DS9502P+ internally ties pins 1&6 as one anode port and pins 2&5 as another, creating two parallel bidirectional paths to the common cathode (pins 3&4). This symmetry ensures transient energy from differential-mode ESD events is evenly distributed, preventing localized heating and extending device lifetime under repeated strikes. The DS9502P+ leverages this architecture to achieve >27kV IEC 801-2 immunity without derating.
Is the DS9502P+ compatible with 3.3V logic interfaces?
No - the DS9502P+ is specified for 5V logic families only. Its 7.4–7.8V avalanche voltage and 9.0–9.5V trigger voltage are optimized to clamp above 5V nominal rails while staying below typical 5V I/O absolute maximum ratings (e.g., 7V). Using DS9502P+ on 3.3V lines risks premature triggering and excessive leakage; a 3.3V-specific protector like SP3012-02UTG is recommended instead.
What is the maximum continuous current rating for the DS9502P+?
The DS9502P+ supports ±160mA continuous current through the diode in either direction (forward or reverse), with a package-level limit of 80mA continuous DC current. This dual rating reflects its bidirectional design: ±160mA applies across the anode-cathode junction, while the 80mA package limit governs total thermal dissipation. For sustained operation, DS9502P+ must remain within both limits simultaneously.
Does the DS9502P+ meet IEC 61000-4-2 requirements?
The DS9502P+ enables system-level compliance with IEC 61000-4-2 (formerly IEC 801-2) up to ±27kV contact discharge when used as secondary protection on SRAM module I/O lines. While the DS9502P+ itself is characterized per JEDEC standards, its 27kV rating is validated in application circuits with pre-protected memory chips - confirming full system immunity, not just component-level performance.
DS9502P+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Package/Case:
- 6-SMD, J-Lead
- Series:
- -
- Packaging:
- Tube
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 9V (Typ)
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOC
DS9502P+ FAQ
1.How can I place an order for DS9502P+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS9502P+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS9502P+ reliable?
The price and inventory of DS9502P+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS9502P+ is usually 5 days.
3.What payment methods are accepted for DS9502P+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS9502P+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS9502P+?
DS9502P+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS9502P+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS9502P+?
For technical support, including DS9502P+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS9502P+ requirements.
6.How does Aetrix verify that DS9502P+ is sourced from the original manufacturer or authorized distributors?
All DS9502P+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS9502P+ meets industry standards.
7.What is the process for return or replacement of DS9502P+?
All DS9502P+ units undergo pre-shipment inspection (PSI). If there is an issue with DS9502P+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS9502P+ part is unused and in its original packaging.
Return procedure for DS9502P+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS9502P+ Tags
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onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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