onsemi ESD11B5.0SMT5G

Overview

ESD11B5.0SMT5G from onsemi is a bi-directional transient voltage suppressor (TVS) diode designed for ESD protection of high-speed data lines and I/O ports in portable electronics. It features a 5.0 V working peak reverse voltage (VRWM), clamping voltage of 13.5 V at 8 A peak pulse current (IPP), <1 ns response time, and IEC61000−4−2 Level 4 (±8 kV contact / ±15 kV air) compliance - deployed in cellular phones, digital cameras, and MP3 players where board space is constrained.

For engineers reviewing the ESD11B5.0SMT5G datasheet, pinout, applications, or equivalent options, key selection considerations include clamping performance under IEC61000−4−2 stress, ultra-small 0.6 mm × 0.3 mm flip-chip footprint, low leakage (<1.0 µA @ 5.0 V), and compatibility with Pb-free reflow profiles up to 260°C.

Technical Context

This device operates as a bi-directional TVS diode using silicon avalanche junction technology to clamp transient overvoltages before they reach sensitive downstream ICs. Its design centers on fast turn-on (<1 ns) and low dynamic impedance to minimize voltage overshoot during ESD events.

It is specified per IEC61000−4−2 Level 4 and IEC61000−4−4 Level 4, with verified clamping behavior captured via oscilloscope waveforms across ±8 kV contact discharge. The 0.3 mm body height and MSL 1 rating support automated assembly on fine-pitch PCBs without moisture sensitivity concerns.

Key Specifications

Pinout & Package

ESD11B5.0SMT5G uses a 2-pin flip-chip package (Case 499BA), with no external leads - both terminals are solder bumps on the bottom surface. Mounting orientation is non-polarized; either terminal may serve as anode or cathode due to bi-directional symmetry.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD5Z5.0T1G and TPD2E001DRYR, the ESD11B5.0SMT5G delivers the lowest clamping voltage (13.5 V) in the smallest footprint (0.6 × 0.3 mm), making it optimal for space-constrained, high-reliability ESD protection where minimizing voltage overshoot is paramount.

Availability

ESD11B5.0SMT5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, smartphone audio jack ESD suppression, and digital camera data line safeguarding requiring stable component supply across high-volume consumer electronics programs.

Supply support for ESD11B5.0SMT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and logic solutions for automotive, industrial, cloud computing, and consumer markets.

The ESD11B Series belongs to onsemi's transient voltage suppressor portfolio, engineered specifically for ultra-compact, high-performance ESD protection in portable and wearable electronics with stringent size and reliability requirements.

FAQ

What is the clamping voltage of ESD11B5.0SMT5G and under what test condition is it specified?

The ESD11B5.0SMT5G has a maximum clamping voltage (VC) of 13.5 V, measured at 8 A peak pulse current (IPP) per the IEC61000−4−2 waveform. This value reflects the actual voltage observed across the device during an 8 kV contact ESD event, as validated by oscilloscope waveform capture in the official datasheet. The ESD11B5.0SMT5G achieves this low clamping performance while maintaining bi-directional operation and sub-1 ns response.

Is ESD11B5.0SMT5G compatible with lead-free reflow soldering processes?

Yes, ESD11B5.0SMT5G is qualified for Pb-free reflow with a maximum peak temperature of 260°C, meeting J-STD-020 requirements. Its flip-chip construction and die-attach materials are engineered for thermal stability during standard SAC305 profile reflow. The device also carries MSL 1 rating, meaning it can be stored indefinitely before assembly without baking - a key advantage for ESD11B5.0SMT5G in high-throughput SMT lines.

Does ESD11B5.0SMT5G require polarity-aware placement on the PCB?

No, ESD11B5.0SMT5G is a bi-directional TVS diode with symmetrical breakdown characteristics, so it does not require orientation-specific placement. Both terminals function identically - either bump can connect to the protected signal line and the other to ground. This simplifies layout, reduces assembly errors, and eliminates the need for polarity markings on the ESD11B5.0SMT5G footprint.

What is the capacitance of ESD11B5.0SMT5G and how does it affect high-speed signal integrity?

The ESD11B5.0SMT5G has a typical capacitance of 13.5 pF, measured at 1 MHz and 0 V bias. This low value minimizes loading on high-speed signals such as USB 2.0 D+/D−, ensuring minimal impact on edge rate and eye diagram integrity. Because the ESD11B5.0SMT5G places capacitance directly at the connector, its controlled parasitic profile helps maintain impedance continuity better than larger-footprint alternatives.

How does ESD11B5.0SMT5G meet IEC61000−4−2 Level 4, and what does that mean for end-product certification?

ESD11B5.0SMT5G is characterized to withstand ±8 kV contact and ±15 kV air discharge per IEC61000−4−2 Level 4 - the highest immunity level defined for portable equipment. When implemented correctly (i.e., placed at entry points with low-inductance ground paths), the ESD11B5.0SMT5G enables system-level pass/fail compliance. Its verified clamping behavior under these stresses is documented via oscilloscope screenshots in the official datasheet for ESD11B5.0SMT5G.