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onsemi ESD5371MXT5G
- Part No.:
- ESD5371MXT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- -
- Datasheet:
-
ESD5371MXT5G.pdf
- Description:
- TRANSISTOR VOLTAGE SUPPRESSOR DI
- Quantity:
- Payment:
- Shipping:
Inventory:29,488,490
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Product details
Overview
ESD5371MXT5G from onsemi is a bidirectional ESD protection diode in X3DFN2 package (0.62 mm × 0.32 mm × 0.3 mm), designed for low-capacitance (<10 pF), low-leakage (<0.1 µA), and fast-response transient suppression on voltage-sensitive interfaces such as SD card lines, audio paths, and GPIOs.
For engineers reviewing the ESD5371MXT5G datasheet, pinout, applications, or equivalent options, key selection criteria include IEC 61000−4−2 Level 4 compliance (±30 kV contact/air), 3.3 V stand-off voltage, 8 V clamping at 1 A, 10 pF junction capacitance, and dynamic resistance of 0.22 Ω - all critical for high-speed signal integrity in space-constrained portable electronics.
Technical Context
The ESD5371MXT5G implements a symmetric bidirectional TVS structure with identical clamping behavior for positive and negative transients, verified across pin 1–2 and 2–1 configurations. Its low 0.22 Ω dynamic resistance enables stable voltage clamping under high-current TLP pulses up to 16 A.
It operates within −55 °C to +150 °C junction temperature range and delivers 8 V clamping at 1 A IPP, rising to 10.3–12 V at 6 A IPP per 8/20 µs waveform - matching IEC 61000−4−5 surge immunity requirements while maintaining sub-10 pF capacitance at 0 V bias and 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage | 3.3 V - ensures no conduction during normal 3.3 V I/O operation, preserving signal integrity |
| Clamping Voltage @ 1 A | 8 V - limits transient overvoltage to safe levels for downstream 3.3 V logic |
| Junction Capacitance | 10 pF @ 0 V, 1 MHz - minimizes signal distortion on high-speed data lines (e.g., SD card, USB 2.0) |
| IEC 61000−4−2 Rating | ±30 kV contact / ±30 kV air - exceeds Level 4 requirement, enabling robust system-level ESD certification |
| Dynamic Resistance | 0.22 Ω - sustains low clamping voltage rise under fast, high-current ESD pulses |
| Leakage Current | 0.1 µA @ 3.3 V - prevents power drain in battery-powered devices with always-on I/O |
| Package Dimensions | 0.62 mm × 0.32 mm × 0.3 mm - fits ultra-dense PCB layouts where board space is constrained |
Pinout & Package
ESD5371MXT5G is housed in the X3DFN2 package (Case 152AF), a 2-terminal micro-packaged diode with no polarity marking - terminals are functionally interchangeable due to bidirectional symmetry. The device has no internal ground or control pins; both terminals serve as symmetrical anode/cathode pairs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 | Anode/Cathode (bidirectional) | Connects to protected line (e.g., SD_DAT0); conducts equally in either direction during ESD event |
| Terminal 2 | Anode/Cathode (bidirectional) | Connects to common reference (e.g., GND or VCC rail); completes low-impedance path for transient current |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional Clamping | Identical 8 V clamping for ±1 A pulses - eliminates need for polarity-aware layout or dual-diode solutions |
| Ultra-Low Capacitance | 10 pF at 0 V - preserves signal edge rate and eye diagram integrity on 10–50 Mbps digital interfaces |
| Sub-Millimeter Footprint | 0.62 mm × 0.32 mm - enables placement directly at connector or IC pad without routing detours |
| Low Dynamic Resistance | 0.22 Ω - reduces voltage overshoot during fast-rising ESD events (tr < 1 ns) |
| RoHS & Halogen-Free | Pb-free, BFR-free construction - meets IPC-J-STD-609A and EU Directive 2011/65/EU requirements |
Applications
| SD Card Interface Protection | Mobile Audio Line Protection |
|---|---|
Use Scenario: Protecting SDIO data lines (DAT0–DAT3, CMD, CLK) in smartphones and tablets against user-handling ESD. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed between SD card connector and host controller. Use Value: 10 pF capacitance avoids timing skew on 25 MHz SD clock; ±30 kV contact rating ensures pass/fail compliance in IEC 61000−4−2 system testing. | Use Scenario: Shielding headset jack microphone and earpiece lines from cable-discharge events in portable audio devices. IC Role / Device Role / Timing Role: Low-leakage ESD clamp on analog audio paths operating near 0 V DC bias. Use Value: 0.1 µA leakage prevents DC offset drift in amplifier inputs; 8 V clamping protects op-amp input stages rated for ±12 V absolute maximum. |
| GPIO ESD Hardening | USB 2.0 D+/D− Line Protection |
Use Scenario: Safeguarding exposed microcontroller GPIOs used for buttons, sensors, or debug interfaces in industrial handhelds. IC Role / Device Role / Timing Role: Standalone ESD shunt mounted directly at PCB edge connectors or test points. Use Value: 0.62 mm × 0.32 mm footprint allows placement within 2 mm of pad; 3.3 V stand-off avoids false triggering during 3.3 V logic transitions. | Use Scenario: Adding secondary ESD protection on USB 2.0 differential pair traces adjacent to USB controller ICs. IC Role / Device Role / Timing Role: Low-capacitance parallel clamp to maintain 90 Ω differential impedance. Use Value: 10 pF total capacitance adds <0.1% impedance deviation; bidirectional response handles both D+ and D− surges without polarity constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | Single-channel, 0.65 mm × 0.35 mm, 12 pF, 3.6 V stand-off, 11 V clamping @ 1 A | Slightly higher capacitance and lower stand-off voltage - less suitable for 3.3 V I/O with tight noise margins | Preferable when dual-line protection is needed (TPD2E001 covers two lines in one package) |
| SP1001-01UTG | 0.6 mm × 0.3 mm, 15 pF, 3.3 V stand-off, 10.5 V clamping @ 1 A, higher leakage (1 µA) | Higher capacitance degrades signal integrity on >20 Mbps lines; elevated leakage may affect battery life in always-on sensors | Acceptable for cost-sensitive consumer designs where 15 pF is tolerable and leakage is not critical |
Compared with TPD2E001DRYR and SP1001-01UTG, the ESD5371MXT5G offers the lowest capacitance (10 pF) and leakage (0.1 µA) in its size class, making it optimal for high-speed, low-power 3.3 V interfaces where signal fidelity and standby current are design-critical.
Availability
ESD5371MXT5G is available at Aetrix Electronics and suitable for SD card protection, mobile audio line hardening, and GPIO ESD mitigation requiring stable component supply across high-mix, low-volume production runs and rapid prototyping cycles.
Supply support for ESD5371MXT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global supplier of energy-efficient semiconductor components, specializing in automotive, industrial, cloud, and IoT applications with emphasis on reliability and sustainability.
The ESD5371MXT5G belongs to onsemi's Micro-Packaged Diodes for ESD Protection product line, engineered specifically for ultra-compact, high-fidelity transient suppression in portable and wearable electronics where board area and signal integrity are tightly constrained.
FAQ
What is the maximum working voltage supported by the ESD5371MXT5G?
The ESD5371MXT5G has a specified working peak reverse voltage (VRWM) of 3.3 V. This means it is rated to block up to 3.3 V in normal operation without conducting, making it suitable for protecting 3.3 V I/O rails. Exceeding this voltage risks forward conduction and potential damage. The breakdown voltage starts at 3.7 V (min), confirming its intended use in 3.3 V systems. Always verify system voltage tolerances before deploying ESD5371MXT5G in new designs.
Does the ESD5371MXT5G require orientation during PCB placement?
No - the ESD5371MXT5G is a bidirectional device with symmetrical electrical characteristics between Terminal 1 and Terminal 2. Its X3DFN2 package has no polarity marking, and datasheet testing confirms identical clamping performance for both pin 1–2 and pin 2–1 configurations. This eliminates orientation concerns during automated placement and simplifies layout, especially in dense routing areas. The ESD5371MXT5G functions correctly regardless of terminal assignment.
What is the clamping voltage of the ESD5371MXT5G under IEC 61000−4−2 Level 4 stress?
Under IEC 61000−4−2 Level 4 conditions (±8 kV contact discharge), the ESD5371MXT5G achieves a clamping voltage of ≤11 V, as validated by TLP testing at 16 A. This value is confirmed in the datasheet's Electrical Characteristics table under "Clamping Voltage (TLP)" and correlates with oscilloscope screenshots in Figures 1 and 2. The ESD5371MXT5G maintains this performance across its full operating temperature range, ensuring consistent protection during real-world ESD events.
Can the ESD5371MXT5G be used on 5 V logic lines?
No - the ESD5371MXT5G is not recommended for 5 V logic lines. Its 3.3 V stand-off voltage (VRWM) and 3.7 V minimum breakdown voltage mean it will begin conducting significantly below 5 V, risking unintended leakage, power loss, or latch-up. For 5 V interfaces, consider alternatives like ESD5372MXT5G (5 V VRWM) or NUP4105MR6T1G. Using ESD5371MXT5G on 5 V lines violates its Absolute Maximum Ratings and compromises long-term reliability.
How does the 10 pF junction capacitance of the ESD5371MXT5G impact high-speed signal integrity?
The 10 pF junction capacitance of the ESD5371MXT5G is measured at 0 V bias and 1 MHz, and remains stable up to 1 GHz per Figure 5. At typical SD card (25 MHz) or USB 2.0 (480 MHz) frequencies, this adds negligible insertion loss (<0.2 dB) and phase shift, preserving eye opening and jitter margin. Its low capacitance avoids RC filtering of fast edges - critical for maintaining setup/hold timing in synchronous interfaces. Designers confirm clean signal waveforms when ESD5371MXT5G is placed within 3 mm of the protected pin.
ESD5371MXT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- -
- Series:
- *
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- -
- Unidirectional Channels:
- -
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- -
- Voltage - Breakdown (Min):
- -
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- -
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
ESD5371MXT5G FAQ
1.How can I place an order for ESD5371MXT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD5371MXT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD5371MXT5G reliable?
The price and inventory of ESD5371MXT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD5371MXT5G is usually 5 days.
3.What payment methods are accepted for ESD5371MXT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD5371MXT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD5371MXT5G?
ESD5371MXT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD5371MXT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD5371MXT5G?
For technical support, including ESD5371MXT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD5371MXT5G requirements.
6.How does Aetrix verify that ESD5371MXT5G is sourced from the original manufacturer or authorized distributors?
All ESD5371MXT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD5371MXT5G meets industry standards.
7.What is the process for return or replacement of ESD5371MXT5G?
All ESD5371MXT5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD5371MXT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD5371MXT5G part is unused and in its original packaging.
Return procedure for ESD5371MXT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD5371MXT5G Tags
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ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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