onsemi ESD5382MUT5G

Overview

ESD5382MUT5G from onsemi is a unidirectional ESD protection diode in X3DFN2 package, featuring 3.0 V working peak reverse voltage, 26.0 V clamping voltage at 1 A IPP, 50 nA max reverse leakage at VRWM, 14.2 V breakdown voltage, and 6 pF typical capacitance. It delivers IEC61000−4−2 Level 4 (±8 kV contact) and IEC61000−4−4 Level 4 EFT protection for high-speed data lines in portable electronics.

For engineers reviewing the ESD5382MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 1 A pulse, sub-7 pF capacitance for USB 2.0/MIPI compatibility, low leakage for battery-critical interfaces, and validated ±8 kV ESD robustness per IEC61000−4−2.

Technical Context

This unidirectional TVS diode operates with cathode-anode polarity and is optimized for signal-line protection where low capacitive loading and fast transient response (<1 ns) are critical. Its 6 pF capacitance and 26.0 V clamping voltage at 1 A support high-speed interfaces without signal integrity degradation.

The device meets MSL 1 reflow requirements (260°C peak, 10 s), has 0.60 mm × 0.30 mm body outline and 0.3 mm height, and is Pb-free, halogen-free, and RoHS compliant - enabling use in space-constrained, environmentally regulated portable designs.

Key Specifications

Pinout & Package

X3DFN2 package (Case 152AF): 0.60 mm × 0.30 mm body, 0.3 mm height, 0.35 mm pitch, MSL 1, Pb-free, RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD5381MUT5G and TPD2E001DRYR, ESD5382MUT5G uniquely balances ultra-low capacitance (6 pF), moderate clamping (26.0 V), and minimal footprint (0.60 × 0.30 mm), making it the preferred choice for high-density USB/MIPI protection where signal integrity and board area are co-constrained.

Availability

ESD5382MUT5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, MIPI D-PHY safeguarding, and touchscreen I/O hardening requiring stable component supply across consumer electronics production ramps.

Supply support for ESD5382MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The ESD5381 Series - including ESD5382MUT5G - was designed specifically for board-level ESD protection of high-speed, low-voltage signal lines in portable electronics, emphasizing minimal capacitance, precise clamping, and ultra-compact packaging.

FAQ

What is the clamping voltage of ESD5382MUT5G and how is it measured?

The ESD5382MUT5G has a maximum clamping voltage of 26.0 V at 1 A peak pulse current (IPP), measured per IEC61000−4−2 waveform using oscilloscope screenshots of the voltage across the device during an 8 kV contact discharge event. This value reflects actual transient suppression performance under standardized ESD test conditions, not theoretical or simulated data. The measurement is documented in Figure 4 of the official datasheet for ESD5382MUT5G.

Is ESD5382MUT5G unidirectional or bidirectional, and how does that affect its circuit placement?

ESD5382MUT5G is a unidirectional ESD protection diode, with Pin 1 as cathode and Pin 2 as anode. It must be placed with the cathode tied to ground and the anode connected to the protected signal line. This configuration provides protection only against positive transients on the line and negative transients referenced to ground - making it ideal for DC-biased interfaces like USB 2.0 or I²C with pull-up resistors. The unidirectional architecture enables lower capacitance (6 pF) versus bidirectional alternatives.

What is the package type and dimensions of ESD5382MUT5G?

ESD5382MUT5G uses the X3DFN2 package (Case 152AF), measuring 0.60 mm × 0.30 mm in footprint and 0.3 mm in height, with 0.35 mm pin pitch. It complies with MSL 1 moisture sensitivity level and supports lead-free reflow up to 260°C for 10 seconds. This ultra-small outline is specified in the mechanical drawings of the ESD5381 Series datasheet and verified in the "PACKAGE DIMENSIONS" section on page 4.

Does ESD5382MUT5G meet IEC61000−4−2 Level 4 ESD immunity?

Yes, ESD5382MUT5G is rated for IEC61000−4−2 Level 4 ESD protection: ±8 kV contact discharge and ±15 kV air discharge. This rating is explicitly stated in the "Specification Features" section and confirmed in the "ELECTRICAL CHARACTERISTICS" table, where Figures 3 and 4 show oscilloscope waveforms for positive and negative 8 kV contact discharges. Compliance is inherent to the device's design and does not require external components.

What is the maximum reverse leakage current for ESD5382MUT5G at its working voltage?

The maximum reverse leakage current (IR) for ESD5382MUT5G is 50 nA at its working peak reverse voltage (VRWM) of 3.0 V, measured at TA = 25°C. This ultra-low leakage is critical for preserving battery life in always-on portable devices and preventing signal-line voltage droop in high-impedance interfaces. The value is specified in the Electrical Characteristics table on page 2 of the ESD5381 Series datasheet under the ESD5382MUT5G row.