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onsemi ESD5482MUT5G
- Part No.:
- ESD5482MUT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
ESD5482MUT5G.pdf
- Description:
- TVS DIODE 3.3VWM 7.8VC 2X3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,812
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Product details
Overview
ESD5482MUT5G from onsemi is a bidirectional ESD protection diode in X3DFN2 package (0.60 mm × 0.30 mm, 0.3 mm height), designed to safeguard high-speed data lines in portable electronics. It delivers 3.3 V working voltage, 5.0 pF capacitance at 1 MHz, <1 nA leakage at VRWM, 7.8–9.1 V clamping voltage at 1 A IPP, and full IEC61000‑4‑2 Level 4 (±10 kV contact) compliance - critical for USB 2.0, HDMI, and audio jack interfaces.
For engineers reviewing the ESD5482MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include low RF insertion loss (0.20 dB @ 1 MHz), dynamic resistance of 0.60 Ω, sub-1 ns response time, and compatibility with high-density PCB layouts where board space and signal integrity are constrained.
Technical Context
The ESD5482MUT5G is a bidirectional TVS diode configured as a single-channel, anode-cathode pair in a 2-terminal X3DFN2 package. Its clamping behavior is defined per IEC61000‑4‑2 waveform with verified oscilloscope screenshots showing peak clamping ≤9.1 V during ±8 kV contact discharge.
It operates with zero bias and requires no external control signals. The device exhibits symmetric IV characteristics (VBR = 5.0 V min both directions), junction capacitance stable up to 1 GHz (5.0–7.0 pF), and dynamic resistance of 0.60 Ω measured via TLP pulse testing - enabling effective high-frequency transient suppression without signal distortion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage (VRWM) | 3.3 V - sets maximum continuous operating voltage before leakage rises significantly; matches 3.3 V I/O rails in mobile SoCs and PMICs. |
| Clamping Voltage (VC) | 7.8–9.1 V @ 1 A IPP - limits transient voltage seen by protected IC during ESD event; ensures downstream logic remains below absolute max ratings. |
| Junction Capacitance (CJ) | 5.0 pF @ 1 MHz - enables use on USB 2.0 (480 Mbps) and audio lines without measurable signal degradation or rise-time impact. |
| ESD Rating | IEC61000‑4‑2 Level 4 (±10 kV contact) - certified system-level robustness for handheld consumer devices requiring field-reliable ESD immunity. |
| Response Time | <1 ns - ensures clamping activation precedes propagation of ESD-induced voltage overshoot into sensitive analog/digital circuitry. |
| Dynamic Resistance (RDYN) | 0.60 Ω - lowers voltage overshoot under high-current transients by minimizing IR drop across the protection element itself. |
Pinout & Package
ESD5482MUT5G uses the X3DFN2 (Case 152AF) surface-mount package: 0.62 mm × 0.32 mm body, 0.24 mm height, 0.35 mm pitch, MSL 1 rated, Pb-free and RoHS compliant. Mounting position is unrestricted.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Connected to ground or low-impedance return path; forms cathode-side conduction path during positive transients. |
| Pin 2 | Anode | Connected to protected signal line; forms anode-side conduction path during negative transients; bidirectional operation enabled by symmetry. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional Clamping | Enables single-device protection of AC-coupled or differential lines (e.g., USB D+/D−, audio stereo) without polarity constraints. |
| Low RF Insertion Loss | 0.20 dB @ 1 MHz and 0.56 dB @ 8.5 GHz - preserves signal fidelity on high-speed serial links and RF front-end interfaces. |
| Sub-1 ns Response | Activates before ESD energy couples into downstream ICs, preventing latch-up or gate oxide damage in CMOS inputs. |
| Ultra-Small Footprint | 0.60 mm × 0.30 mm area - fits within tight spacing around micro-B/USB-C connectors and camera module flex cables. |
Applications
| USB 2.0 Data Lines | HDMI Interface Protection |
|---|---|
Use Scenario: Protecting D+ and D− pins of USB 2.0 transceivers in smartphones and tablets against repeated ESD events during cable insertion/removal. IC Role / Device Role: Bidirectional transient voltage suppressor placed directly at connector, shunting ESD current to ground before it reaches PHY layer. Use Value: 5.0 pF capacitance avoids signal integrity degradation at 480 Mbps; 7.8–9.1 V clamping prevents PHY input overvoltage beyond 10 V absolute max rating. | Use Scenario: Safeguarding TMDS clock and data channels in portable HDMI sources (e.g., action cameras, dongles) exposed to user-handling ESD. IC Role / Device Role: Low-capacitance ESD clamp mounted adjacent to HDMI connector, with minimal trace length to preserve 165 MHz bandwidth. Use Value: 0.56 dB insertion loss @ 8.5 GHz ensures <0.1 dB eye diagram closure penalty; ±10 kV IEC61000‑4‑2 rating meets CE/UL end-equipment requirements. |
| Smartphone Audio Jacks | Industrial Sensor Interfaces |
Use Scenario: Protecting microphone and headset detection lines in 3.5 mm TRRS jacks from user-body ESD during plug insertion. IC Role / Device Role: Standalone ESD diode placed inline between jack switch/mic bias and codec input, operating at 3.3 V rail. Use Value: 3.3 V VRWM aligns with codec I/O voltage; <1 nA leakage prevents DC bias shift; 0.60 Ω RDYN minimizes voltage overshoot on high-impedance mic paths. | Use Scenario: Shielding 4–20 mA or RS-485 sensor interface lines in compact industrial IoT nodes deployed in ungrounded enclosures. IC Role / Device Role: Primary ESD barrier at field-wire entry point, used with series impedance and filtering for combined surge/ESD immunity. Use Value: IEC61000‑4‑4 Level 4 EFT rating supports immunity to fast transients in electrically noisy factory environments; MSL 1 allows standard reflow assembly. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | Unidirectional, 5.5 V VRWM, 12 pF CJ @ 1 MHz, 0.8 Ω RDYN | Requires separate devices per polarity; higher capacitance limits use on >100 Mbps lines | Prefer when discrete polarity control needed or cost sensitivity outweighs size/capacitance trade-offs |
| ESD9X3.3SCT5G | Bidirectional, 3.3 V VRWM, 12 pF CJ @ 1 MHz, 0.9 Ω RDYN, SOD-923 package (1.0 × 0.6 mm) | Larger footprint; higher capacitance reduces suitability for USB 2.0 or high-speed audio | Select if board layout allows larger package and lower-cost sourcing is prioritized over RF performance |
Compared with TPD2E001DRYR and ESD9X3.3SCT5G, ESD5482MUT5G provides the smallest footprint and lowest capacitance among these three, making it uniquely suitable for space-constrained, high-speed signal protection where preserving signal integrity is non-negotiable.
Availability
ESD5482MUT5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI channel safeguarding, and smartphone audio jack ESD hardening requiring stable component supply and consistent parametric performance across production lots.
Supply support for ESD5482MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The ESD5482MUT5G belongs to onsemi's Micro-Packaged ESD Protection Diode product line, engineered specifically for ultra-compact, high-fidelity transient suppression in portable and wearable electronics with stringent RF and layout constraints.
FAQ
What is the maximum working voltage supported by ESD5482MUT5G?
The ESD5482MUT5G has a specified reverse working voltage (VRWM) of 3.3 V, meaning it can continuously block up to 3.3 V in normal operation without significant leakage. This makes it ideal for protecting 3.3 V I/O interfaces such as USB 2.0 data lines, HDMI TMDS channels, and audio codec inputs. Exceeding 3.3 V may cause elevated reverse leakage or premature conduction, compromising signal integrity or power efficiency in the host system. The ESD5482MUT5G is not rated for 5 V operation.
Does ESD5482MUT5G support bidirectional ESD protection?
Yes, ESD5482MUT5G is explicitly designed as a bidirectional ESD protection diode, with symmetrical breakdown voltage (VBR ≥ 5.0 V in both directions) and matched clamping performance for positive and negative transients. Its pinout - Pin 1 (cathode) and Pin 2 (anode) - forms a back-to-back configuration that enables clamping of both polarities without external components. This eliminates the need for dual-diode arrangements and simplifies layout for AC-coupled or differential signal paths like USB D+/D− or stereo audio.
What is the typical junction capacitance of ESD5482MUT5G at high frequency?
The ESD5482MUT5G exhibits 5.0–7.0 pF junction capacitance (CJ) across 0 V bias and 1 MHz to 1 GHz frequencies. At 1 GHz, capacitance remains at 7.0 pF (max), ensuring minimal loading on RF-sensitive nodes such as antenna switches or front-end modules. This stable, low-CJ profile is confirmed in Figure 6 of the official datasheet and directly supports its use in high-speed digital interfaces including USB 2.0 and HDMI without measurable rise-time degradation or signal attenuation.
Can ESD5482MUT5G be used in automotive applications?
The ESD5482MUT5G is not AEC-Q200 qualified and lacks extended temperature range validation beyond −55°C to +150°C junction storage. While its electrical specs meet many infotainment or body-control ESD requirements, onsemi does not certify ESD5482MUT5G for automotive use. For automotive-grade ESD protection, designers should select AEC-Q200 qualified alternatives such as NUP4105MR6T1G or ESD7L5.0DT5G - both offering similar 3.3 V VRWM but with full automotive qualification and PPAP documentation support.
What is the thermal resistance and power dissipation capability of ESD5482MUT5G?
The ESD5482MUT5G has a thermal resistance (RJA) of 400°C/W on FR-5 board and a maximum power dissipation (PD) of 300 mW at TA = 25°C. These values reflect its ultra-small X3DFN2 package, which limits steady-state heat removal but is optimized for short-duration ESD pulses (nanosecond-scale). During IEC61000‑4‑2 events, energy dissipation occurs too rapidly for thermal accumulation, so RJA and PD are primarily relevant for sustained overvoltage or EFT stress scenarios - where the device's 0.60 Ω dynamic resistance helps limit instantaneous power.
ESD5482MUT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5V
- Voltage - Clamping (Max) @ Ipp:
- 7.8V
- Current - Peak Pulse (10/1000µs):
- 1A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 5pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X3DFN (0.6x0.3) (0201)
ESD5482MUT5G FAQ
1.How can I place an order for ESD5482MUT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD5482MUT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD5482MUT5G reliable?
The price and inventory of ESD5482MUT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD5482MUT5G is usually 5 days.
3.What payment methods are accepted for ESD5482MUT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD5482MUT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD5482MUT5G?
ESD5482MUT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD5482MUT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD5482MUT5G?
For technical support, including ESD5482MUT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD5482MUT5G requirements.
6.How does Aetrix verify that ESD5482MUT5G is sourced from the original manufacturer or authorized distributors?
All ESD5482MUT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD5482MUT5G meets industry standards.
7.What is the process for return or replacement of ESD5482MUT5G?
All ESD5482MUT5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD5482MUT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD5482MUT5G part is unused and in its original packaging.
Return procedure for ESD5482MUT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD5482MUT5G Tags
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