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onsemi ESD5Z2.5T1G
- Part No.:
- ESD5Z2.5T1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
ESD5Z2.5T1G.pdf
- Description:
- TVS DIODE 2.5VWM 10.9VC SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:23,410
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Product details
Overview
ESD5Z2.5T1G from onsemi is a unidirectional ESD protection diode in SOD-523 package, featuring 2.5 V working peak reverse voltage, 6.5 V clamping voltage at 5 A, <1 ns response time, 120 W peak power rating, and IEC 61000-4-2 Level 4 (±30 kV contact) compliance - deployed for USB data line and low-voltage I/O port protection in smartphones and wearables.
For engineers reviewing the ESD5Z2.5T1G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 5 A surge, sub-1 ns transient response, ultra-low capacitance (145 pF), and compatibility with space-constrained portable PCB layouts requiring minimal trace inductance.
Technical Context
This device operates as a unidirectional transient voltage suppression diode, leveraging silicon avalanche breakdown to clamp ESD transients before they reach downstream ICs. Its 2.5 V VRWM ensures compatibility with 1.8 V and 2.5 V logic rails, while its 6.5 V VC at 5 A limits stress on protected interfaces during IEC 61000-4-2 events.
The SOD-523 package enables direct placement adjacent to connectors or high-speed pins, minimizing parasitic inductance. With 145 pF capacitance at 0 V and 1 MHz, it maintains signal integrity on low-speed digital lines without degrading rise/fall times.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 2.5 V - Maximum continuous reverse voltage before leakage exceeds 6.0 μA; sets upper limit for compatible I/O rail voltages. |
| VC @ IPP = 5 A | 6.5 V - Clamped voltage during 8/20 μs surge; defines worst-case overvoltage seen by protected IC input. |
| IPP Max | 120 A - Peak pulse current survivability per IEC 61000-4-2; determines robustness against ±30 kV contact discharge. |
| C @ 0 V, 1 MHz | 145 pF - Junction capacitance; impacts signal integrity on data lines; suitable for USB 2.0 and I²C but not high-speed USB 3.0. |
| Response Time | <1 ns - Time from transient onset to clamping activation; critical for protecting nanosecond-scale CMOS inputs. |
| ESD Rating | Class 3 HBM (>16 kV) - Validated per JESD22-A114; qualifies for handheld consumer electronics end-equipment certification. |
| Package | SOD-523 (1.20 × 0.80 × 0.60 mm) - Ultra-small footprint enabling placement within 2 mm of connector pads to minimize loop inductance. |
Pinout & Package
SOD-523 surface-mount package with cathode marked by band; 0.7 mm body height supports automated reflow assembly and meets MSL 1 requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded) | Cathode | Connected to system ground or low-impedance return path; must be routed with minimal inductance to ensure effective clamping. |
| 2 | Anode | Connected to protected signal line (e.g., USB D+); reverse-biased during normal operation; conducts during negative ESD events. |
Key Features
| Feature | Design Value |
|---|---|
| Low Clamping Voltage | 6.5 V at 5 A - Limits voltage overshoot below typical 3.3 V IO absolute maximum ratings, preventing latch-up or gate oxide damage. |
| Ultra-Small Footprint | 1.20 mm × 0.80 mm - Enables integration directly at board edge connectors without consuming valuable routing area on dense mobile PCBs. |
| IEC 61000-4-2 Level 4 Compliance | ±30 kV contact discharge - Meets highest immunity requirement for consumer handheld devices per international EMC standards. |
| Pb-Free & RoHS Compliant | 100% matte tin lead finish - Supports lead-free reflow profiles up to 260 °C and satisfies environmental compliance mandates for global markets. |
Applications
| Smartphone USB Interface Protection | Wearable Sensor I/O Protection |
|---|---|
Use Scenario: Protecting USB 2.0 D+/D− lines in compact smartphones subjected to frequent handling and pocket discharge events. IC Role / Device Role / Timing Role: Unidirectional ESD shunt placed between data line and ground, activated only during negative transients relative to ground. Use Value: 6.5 V clamping prevents damage to USB PHY transceivers rated for 3.6 V absolute max, while 145 pF capacitance avoids signal integrity degradation at 480 Mbps. | Use Scenario: Safeguarding analog sensor outputs (e.g., heart rate monitor ADC inputs) in fitness bands exposed to static-prone environments. IC Role / Device Role / Timing Role: Low-leakage (6.0 μA @ 2.5 V) clamping diode placed across sensor output and ground to suppress HBM discharges without loading DC bias. Use Value: Sub-1 ns response ensures protection before sensitive analog front-end amplifiers experience overvoltage, preserving measurement accuracy and long-term reliability. |
| Industrial Control Panel Keypad | Bluetooth Audio Module Line Drivers |
Use Scenario: Shielding membrane keypad scan lines in factory HMIs where operators wear non-ESD footwear and generate >15 kV discharges. IC Role / Device Role / Timing Role: Standoff-rated (2.5 V) unidirectional TVS on each row/column line, referenced to local ground plane with short thermal via. Use Value: 120 A peak surge capability withstands repeated EFT bursts per IEC 61000-4-4 Level 4 (40 A), extending panel service life in harsh electrical environments. | Use Scenario: Protecting differential audio line drivers in wireless earbud charging cases during insertion/removal from metal cradles. IC Role / Device Role / Timing Role: Dual-diode configuration (one per line) with cathodes tied to ground, suppressing both positive and negative transients on left/right channel outputs. Use Value: 145 pF capacitance avoids high-frequency roll-off in 20 kHz audio band, while 2.5 V VRWM matches driver's 2.8 V supply headroom. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD5Z3.3T1G | Higher VRWM (3.3 V), higher clamping (8.4 V @ 5 A), lower capacitance (105 pF) | Better suited for 3.3 V I/O rails; less margin for 1.8 V systems | Select when protecting 3.3 V GPIO or UART lines where tighter capacitance budget is required. |
| TPD2E001DRYR | Bi-directional, 1.2 pF typical capacitance, 5.5 V clamping @ 1 A, SOT-553 package | Designed for high-speed data lines (e.g., USB 2.0, HDMI); lower clamping but limited surge rating (12 A) | Prefer for signal integrity-critical interfaces; avoid for high-energy ESD environments requiring >100 A IPP. |
Compared with ESD5Z3.3T1G and TPD2E001DRYR, the ESD5Z2.5T1G offers optimal clamping margin for sub-2.5 V logic while maintaining robust 120 A surge capability - making it preferred for battery-powered IoT sensors and low-voltage display interfaces where both voltage headroom and energy absorption are critical.
Availability
ESD5Z2.5T1G is available at Aetrix Electronics and suitable for smartphone interface protection, wearable sensor I/O safeguarding, and industrial keypad ESD hardening requiring stable component supply and consistent parametric performance across production lots.
Supply support for ESD5Z2.5T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and consumer markets.
The ESD5Z2.5T1G belongs to onsemi's Micro-Packaged ESD Protection Diode family, engineered specifically for board-level transient suppression in space-constrained portable electronics with strict EMI and signal integrity requirements.
FAQ
What is the maximum working voltage supported by ESD5Z2.5T1G?
The ESD5Z2.5T1G has a working peak reverse voltage (VRWM) of 2.5 V, meaning it is designed to remain non-conductive under steady-state reverse bias up to this voltage. This makes it suitable for protecting 1.8 V and 2.5 V logic interfaces. Exceeding 2.5 V in normal operation increases leakage current beyond 6.0 μA and risks premature conduction. The ESD5Z2.5T1G must not be used on 3.3 V or higher rails without risk of DC failure.
Does ESD5Z2.5T1G meet automotive qualification standards?
Yes - the SZESD5Z2.5T1G variant (automotive-grade suffix) is AEC-Q101 qualified and PPAP capable, with identical electrical specs to ESD5Z2.5T1G. The standard ESD5Z2.5T1G is not AEC-Q101 certified; users requiring automotive deployment must specify the SZ-prefix version. Both share the same SOD-523 package, 2.5 V VRWM, and 6.5 V clamping performance.
How does ESD5Z2.5T1G compare to bi-directional ESD diodes?
The ESD5Z2.5T1G is unidirectional and optimized for single-ended, ground-referenced signals like USB D+ or GPIO. Unlike bi-directional diodes, it provides lower leakage (6.0 μA vs. typically >100 nA) and tighter clamping for negative transients, but cannot suppress positive surges above VRWM. For differential or AC-coupled lines, a bi-directional part like ESD5Z5.0T1G would be more appropriate - the ESD5Z2.5T1G is purpose-built for asymmetric low-voltage DC paths.
What is the thermal performance of ESD5Z2.5T1G during repeated ESD strikes?
The ESD5Z2.5T1G is rated for 500 mW total power dissipation on FR-4 at 25 °C ambient, but its transient thermal mass allows survival of multiple IEC 61000-4-2 events due to short pulse duration (<100 ns). Junction temperature rise per strike is negligible; cumulative heating is not a concern unless strike repetition exceeds 1 Hz. Layout best practice for ESD5Z2.5T1G includes a dedicated ground pour with ≥2 thermal vias to maintain long-term reliability under burst conditions.
Can ESD5Z2.5T1G be used to protect RF antenna ports?
No - the ESD5Z2.5T1G's 145 pF capacitance and non-linear junction behavior introduce unacceptable insertion loss and harmonic distortion in RF paths above ~100 MHz. It is unsuitable for GPS, Bluetooth, or cellular antenna lines. For RF ESD protection, specialized low-capacitance diodes such as NUP4105MR6T1G (0.35 pF) or integrated front-end modules are required. The ESD5Z2.5T1G is intended exclusively for baseband digital and analog signal lines.
ESD5Z2.5T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-79, SOD-523
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 2.5V (Max)
- Voltage - Breakdown (Min):
- 4V
- Voltage - Clamping (Max) @ Ipp:
- 10.9V
- Current - Peak Pulse (10/1000µs):
- 11A (8/20µs)
- Power - Peak Pulse:
- 120W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 145pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-523
ESD5Z2.5T1G FAQ
1.How can I place an order for ESD5Z2.5T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD5Z2.5T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD5Z2.5T1G reliable?
The price and inventory of ESD5Z2.5T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD5Z2.5T1G is usually 5 days.
3.What payment methods are accepted for ESD5Z2.5T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD5Z2.5T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD5Z2.5T1G?
ESD5Z2.5T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD5Z2.5T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD5Z2.5T1G?
For technical support, including ESD5Z2.5T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD5Z2.5T1G requirements.
6.How does Aetrix verify that ESD5Z2.5T1G is sourced from the original manufacturer or authorized distributors?
All ESD5Z2.5T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD5Z2.5T1G meets industry standards.
7.What is the process for return or replacement of ESD5Z2.5T1G?
All ESD5Z2.5T1G units undergo pre-shipment inspection (PSI). If there is an issue with ESD5Z2.5T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD5Z2.5T1G part is unused and in its original packaging.
Return procedure for ESD5Z2.5T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD5Z2.5T1G Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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