My Inquiry
My Account
onsemi ESD5Z6.0T1G
- Part No.:
- ESD5Z6.0T1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
ESD5Z6.0T1G.pdf
- Description:
- TVS DIODE 6VWM 20.5VC SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:23,598
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ESD5Z6.0T1G from onsemi is a unidirectional ESD protection diode in SOD-523 package, featuring 6.0 V working peak reverse voltage (VRWM), 12.4 V clamping voltage at 5 A (VC), 70 pF capacitance, <1 ns response time, and IEC61000-4-2 Level 4 (±30 kV contact) compliance. It protects high-speed data lines in space-constrained portable electronics.
For engineers reviewing the ESD5Z6.0T1G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping performance under 8/20 µs surge, low capacitance for USB/MIPI signal integrity, and SOD-523 footprint compatibility with tight layout constraints in mobile and wearables designs.
Technical Context
The ESD5Z6.0T1G operates as a unidirectional transient voltage suppression diode, leveraging silicon avalanche breakdown to clamp ESD transients before they reach downstream ICs. Its design targets low-capacitance interfaces where signal fidelity and board area are critical.
It delivers 8.8 A maximum peak pulse current (IPP) per IEC61000-4-2 waveform, with clamping voltage specified at 12.4 V (typical) and 20.5 V (max) under 5 A stress. The device meets AEC-Q101 requirements when ordered as SZESD5Z6.0T1G, but ESD5Z6.0T1G itself is industrial-grade.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 6.0 V - Maximum continuous reverse operating voltage before leakage rises significantly; sets upper limit for protected line DC bias. |
| VC @ IPP = 5 A | 12.4 V (typ), 20.5 V (max) - Peak voltage seen by protected IC during ESD event; directly limits stress on downstream logic. |
| C @ 0 V, 1 MHz | 70 pF - Capacitance across diode terminals; low enough for USB 2.0 and MIPI D-PHY without signal degradation. |
| Response Time | <1 ns - Time to enter clamping conduction after ESD edge; ensures protection before IC input structures fail. |
| ESD Rating (HBM) | Class 3 (>16 kV) - Withstands human-body-model discharges up to 16 kV, exceeding JEDEC JS-001 Level 3 requirement. |
| IEC61000-4-2 Level | Level 4 (±30 kV contact) - Certified for highest system-level ESD immunity test per international EMC standard. |
| Package | SOD-523 (1.20 × 0.80 × 0.60 mm) - Ultra-small surface-mount outline enabling placement adjacent to connectors or IC pads. |
Pinout & Package
SOD-523 package: 2-terminal, surface-mount, cathode-marked micro-packaged diode with 100% matte tin lead finish, MSL 1 rating, and 260°C reflow compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to protected line; conducts during positive transients to ground (in unidirectional configuration with anode grounded). |
| 2 | Anode | Typically tied to ground reference plane; establishes conduction path for ESD current to shunt away from IC inputs. |
Key Features
| Feature | Design Value |
|---|---|
| Low Clamping Voltage | 12.4 V typical at 5 A enables robust protection of 5 V-tolerant I/O pins without overvoltage damage. |
| Ultra-Low Capacitance | 70 pF minimizes signal distortion on high-speed serial links such as USB 2.0, HDMI CEC, and MIPI D-PHY. |
| Sub-1 ns Response | Ensures clamping activation precedes propagation delay of ESD energy into sensitive CMOS inputs. |
| IEC61000-4-2 Level 4 Certified | Validated for ±30 kV contact discharge, meeting stringent end-equipment EMC certification requirements. |
| Pb-Free & RoHS Compliant | Meets global environmental regulations and supports lead-free reflow assembly without reliability compromise. |
Applications
| USB 2.0 Data Lines | Smartphone Button/Keypad Inputs |
|---|---|
Use Scenario: Protecting D+ and D− lines against ESD events during cable insertion or handling in handheld devices. IC Role / Device Role: Unidirectional shunt protector placed between data line and ground, with cathode on signal line. Use Value: 70 pF capacitance avoids USB 2.0 eye diagram closure; 12.4 V clamping prevents latch-up in USB transceivers. | Use Scenario: Shielding mechanical keypad or capacitive touch button traces from user-contact ESD in consumer handsets. IC Role / Device Role: Point-of-entry ESD clamp on each button trace, routed to system ground plane. Use Value: SOD-523 size allows placement within 2 mm of connector/button; <1 ns response blocks fast HBM transients. |
| Digital Camera Interface (MIPI D-PHY) | Power Supply Input Protection |
Use Scenario: Safeguarding high-speed camera sensor interface lines (clock/data lanes) in compact imaging modules. IC Role / Device Role: Low-capacitance ESD suppressor on each differential pair, mounted adjacent to image sensor connector. Use Value: 70 pF ensures minimal skew between D+ and D−; 6.0 V VRWM matches typical D-PHY common-mode voltage range. | Use Scenario: Adding secondary ESD protection on 5 V or 3.3 V power rails entering PCB from external ports or battery connectors. IC Role / Device Role: Reverse-biased clamp between rail and ground, absorbing surges before LDO or PMIC inputs. Use Value: 6.0 V VRWM permits use on 5 V systems; 240 W peak power rating handles multi-pulse EFT events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD5Z6.0T5G | Same electrical specs and SOD-523 package; differs only in tape-and-reel quantity (8000 vs. 3000 units). | No functional difference; used interchangeably where volume packaging aligns with production needs. | Select ESD5Z6.0T5G for high-volume SMT lines requiring larger reels to reduce changeover frequency. |
| TPD2E001DRYR | Bi-directional, 12 pF capacitance, 5.5 V VRWM, 15 V VC @ 1 A; uses X2SON package (1.0 × 0.8 mm). | Better suited for bidirectional signal lines (e.g., I²C) and ultra-low-capacitance needs; lower VRWM limits use on 5 V rails. | Choose TPD2E001DRYR when protecting bidirectional buses or when sub-15 pF capacitance is mandatory for >480 Mbps signals. |
Compared with ESD5Z6.0T1G, ESD5Z6.0T5G offers identical protection performance with optimized logistics, while TPD2E001DRYR trades higher clamping voltage for dramatically lower capacitance and bidirectional operation-making it preferable for noise-sensitive, low-voltage digital interfaces but unsuitable for 6 V-rated power-line protection.
Availability
ESD5Z6.0T1G is available at Aetrix Electronics and suitable for smartphone front-panel interfaces, USB-C accessory detection circuits, and wearable sensor node I/O protection requiring stable component supply and consistent SOD-523 form factor.
Supply support for ESD5Z6.0T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The ESD5Z Series was developed specifically for board-level ESD hardening in miniaturized portable electronics, emphasizing ultra-small footprint, low capacitance, and certified system-level immunity without compromising clamping performance.
FAQ
What is the clamping voltage specification for ESD5Z6.0T1G under IEC61000-4-2 testing?
The ESD5Z6.0T1G has a typical clamping voltage of 12.4 V at 5 A (VC @ IPP = 5 A), with a maximum of 20.5 V under the 8/20 µs surge waveform. This value is measured across the diode terminals during standardized ESD pulse testing and defines the peak voltage imposed on protected circuitry. ESD5Z6.0T1G maintains this performance in its SOD-523 package without derating at room temperature.
Is ESD5Z6.0T1G suitable for protecting USB 2.0 data lines?
Yes, ESD5Z6.0T1G is suitable for USB 2.0 data line protection due to its 70 pF capacitance, which avoids signal integrity degradation at 480 Mbps, and its 6.0 V VRWM, compatible with USB 2.0's 3.3 V nominal signaling. Its 12.4 V clamping voltage safely limits stress on USB transceiver I/O cells. ESD5Z6.0T1G must be placed with cathode on D+/D− and anode to ground in unidirectional configuration.
Does ESD5Z6.0T1G meet automotive qualification standards?
No, ESD5Z6.0T1G is rated for industrial applications. For automotive use, the functionally identical SZESD5Z6.0T1G variant is AEC-Q101 qualified and PPAP capable. ESD5Z6.0T1G lacks the extended temperature validation, process controls, and documentation required for automotive deployment. Always specify SZ-prefix parts for automotive-grade ESD5Z6.0T1G functionality.
What is the maximum peak pulse current rating for ESD5Z6.0T1G?
The ESD5Z6.0T1G supports a maximum peak pulse current (IPP) of 8.8 A under the IEC61000-4-2 8/20 µs waveform, with corresponding peak power dissipation of 181 W. This rating reflects survivability under single-event ESD stress and is validated per onsemi Application Note AND8308/D. Derating is not specified for repetitive pulses in the datasheet.
How does the SOD-523 package of ESD5Z6.0T1G impact PCB layout?
The SOD-523 package (1.20 × 0.80 × 0.60 mm) enables placement within 1–2 mm of connectors or IC pads, minimizing inductance in the ESD current path. Its 2-pin, cathode-banded construction requires strict orientation control during placement. Thermal relief and ground pour under the anode pad improve heat dissipation during surge events. ESD5Z6.0T1G's small size eliminates need for via-in-pad but demands precise stencil aperture design for reliable soldering.
ESD5Z6.0T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-79, SOD-523
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6V (Max)
- Voltage - Breakdown (Min):
- 6.8V
- Voltage - Clamping (Max) @ Ipp:
- 20.5V
- Current - Peak Pulse (10/1000µs):
- 8.8A (8/20µs)
- Power - Peak Pulse:
- 181W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 70pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-523
ESD5Z6.0T1G FAQ
1.How can I place an order for ESD5Z6.0T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD5Z6.0T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD5Z6.0T1G reliable?
The price and inventory of ESD5Z6.0T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD5Z6.0T1G is usually 5 days.
3.What payment methods are accepted for ESD5Z6.0T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD5Z6.0T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD5Z6.0T1G?
ESD5Z6.0T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD5Z6.0T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD5Z6.0T1G?
For technical support, including ESD5Z6.0T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD5Z6.0T1G requirements.
6.How does Aetrix verify that ESD5Z6.0T1G is sourced from the original manufacturer or authorized distributors?
All ESD5Z6.0T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD5Z6.0T1G meets industry standards.
7.What is the process for return or replacement of ESD5Z6.0T1G?
All ESD5Z6.0T1G units undergo pre-shipment inspection (PSI). If there is an issue with ESD5Z6.0T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD5Z6.0T1G part is unused and in its original packaging.
Return procedure for ESD5Z6.0T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD5Z6.0T1G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
