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onsemi ESD5Z6.0T5G
- Part No.:
- ESD5Z6.0T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
ESD5Z6.0T5G.pdf
- Description:
- TVS DIODE 6VWM 20.5VC SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:13,818
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Product details
Overview
ESD5Z6.0T5G from onsemi is a unidirectional ESD protection diode in SOD-523 package, featuring 6.0 V working peak reverse voltage (VRWM), 12.4 V clamping voltage at 5 A (VC), 70 pF capacitance at 0 V, <1 ns response time, and IEC61000-4-2 Level 4 (±30 kV contact) compliance. It protects high-speed data lines in space-constrained portable electronics.
For engineers reviewing the ESD5Z6.0T5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping performance under 8/20 µs surge, low capacitance for USB/MIPI signal integrity, HBM ESD rating (>16 kV), and SOD-523 footprint compatibility with automated assembly.
Technical Context
The ESD5Z6.0T5G is a single-channel, unidirectional TVS diode optimized for board-level ESD suppression on I/O lines. Its low 6.0 V VRWM enables use on 5 V logic rails, while 12.4 V VC at 5 A ensures downstream ICs remain below absolute maximum ratings during transient events.
It delivers 181 W peak power handling per IEC 61000-4-2 waveform, supports 0.01 µA max reverse leakage at VRWM, and achieves 6.8 V minimum breakdown voltage at 1 mA test current - confirming robust overvoltage threshold margin and stable turn-on behavior.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 6.0 V - Maximum continuous reverse operating voltage; compatible with 5 V digital interfaces without leakage-induced power loss. |
| VC @ IPP = 5 A | 12.4 V - Clamping voltage during 8/20 µs surge; limits stress on protected ICs to safe levels per IEC61000-4-2. |
| C @ 0 V, 1 MHz | 70 pF - Low junction capacitance preserves signal integrity on high-speed lines like USB 2.0 and MIPI D-PHY. |
| Response Time | <1 ns - Enables sub-nanosecond reaction to ESD transients, preventing latch-up or gate oxide damage in CMOS inputs. |
| HBM ESD Rating | >16 kV - Meets Class 3 human body model requirement; qualifies for rugged consumer and industrial end-equipment. |
| IEC61000-4-2 Level | Level 4 (±30 kV contact) - Full system-level ESD immunity certification for handheld and portable devices. |
| Ppk @ 8×20 µs | 181 W - Peak pulse power capability ensures survivability against repeated ESD strikes without degradation. |
Pinout & Package
ESD5Z6.0T5G uses the SOD-523 surface-mount package (1.20 mm × 0.80 mm × 0.60 mm), optimized for ultra-compact PCB layouts and reflow-compatible with MSL 1 requirements. Cathode-anode polarity is marked by a band on the cathode end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to ground or low-impedance return path; defines unidirectional conduction direction for ESD current shunting. |
| 2 | Anode | Connected to protected signal line; reverse-biased during normal operation, avalanches during ESD to clamp voltage. |
Key Features
| Feature | Design Value |
|---|---|
| Low Clamping Voltage | 12.4 V at 5 A ensures protected ICs stay within safe operating area during ±8 kV ESD contact discharge. |
| Ultra-Small Footprint | SOD-523 (1.20 × 0.80 mm) saves >50% board area vs. SOT-23, enabling dense routing in smartphones and wearables. |
| Low Capacitance | 70 pF minimizes signal distortion and insertion loss on 480 Mbps USB 2.0 and 1.5 Gbps MIPI D-PHY lanes. |
| High ESD Robustness | ±30 kV IEC61000-4-2 contact rating allows single-device protection for exposed ports without cascaded stages. |
| Pb-Free & RoHS Compliant | 100% matte tin lead finish meets global environmental regulations and supports lead-free reflow profiles up to 260 °C. |
Applications
| USB 2.0 Data Lines | MIPI D-PHY Interfaces |
|---|---|
Use Scenario: Protecting differential USB 2.0 D+ and D− lines in smartphones and OTG accessories against user-handling ESD. IC Role / Device Role: Unidirectional shunt diode placed between each data line and ground, clamping transients before they reach the USB transceiver. Use Value: 70 pF capacitance avoids signal rise-time degradation, while 12.4 V clamping prevents PHY core damage during ±8 kV contact discharge. | Use Scenario: Safeguarding camera module MIPI D-PHY lanes (CLK, DATA0–DATA3) in compact mobile imaging systems. IC Role / Device Role: Per-lane ESD suppressor mounted adjacent to connector, providing localized protection without adding series impedance. Use Value: Sub-1 ns response ensures clamping occurs before MIPI receiver input stages experience overvoltage, preserving bit error rate. |
| Portable Power Input Ports | Industrial Sensor Interface Lines |
Use Scenario: Protecting 5 V micro-USB or USB-C VBUS detection and configuration lines in battery-powered instruments. IC Role / Device Role: Standoff-rated (6.0 V VRWM) diode placed on VBUS sense path to prevent false undervoltage lockout during ESD events. Use Value: 0.01 µA max leakage at 6 V avoids measurement drift in precision ADC reference monitoring circuits. | Use Scenario: Shielding analog and digital sensor outputs (e.g., I²C, UART) in factory-floor IoT nodes exposed to charged personnel or tools. IC Role / Device Role: Point-of-entry protection on sensor breakout boards, placed directly at connector pins before signal conditioning circuitry. Use Value: 181 W peak power rating sustains repeated ESD strikes in uncontrolled environments without parametric shift or failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD5Z6.0T1G | Same electrical specs and SOD-523 package; differs only in tape-and-reel quantity (3000 vs. 8000 units per reel). | No functional difference; suitable for same PCB designs and assembly processes. | Select ESD5Z6.0T1G for lower-volume prototyping or small-batch production where reel size impacts inventory turnover. |
| TPD2E001DRYR | 2-channel unidirectional array in X2SON-4 (1.0 × 0.8 mm); 6.5 V VRWM, 12 V VC @ 5 A, 12 pF typical capacitance. | Lower capacitance ideal for higher-speed interfaces (e.g., USB 3.0), but dual-channel layout requires different routing. | Choose TPD2E001DRYR when protecting two closely spaced lines with tighter capacitance budget; ESD5Z6.0T5G remains optimal for discrete, single-line placement flexibility. |
Compared with ESD5Z6.0T1G, the ESD5Z6.0T5G offers identical protection performance with higher reel quantity for production efficiency; versus TPD2E001DRYR, it trades lower capacitance for simpler single-line integration and broader voltage margin (6.0 V vs. 6.5 V VRWM).
Availability
ESD5Z6.0T5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, MIPI D-PHY safeguarding, and industrial sensor I/O hardening requiring stable component supply across high-mix, low-volume to medium-volume production runs.
Supply support for ESD5Z6.0T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and edge applications.
The ESD5Z Series targets compact, high-reliability ESD protection for portable electronics - designed specifically to meet stringent IEC61000-4-2 Level 4 and HBM Class 3 requirements in minimal PCB area.
FAQ
What is the clamping voltage of ESD5Z6.0T5G at 5 A?
The ESD5Z6.0T5G has a maximum clamping voltage (VC) of 12.4 V when subjected to a 5 A 8/20 µs surge current, as specified in the onsemi datasheet. This value ensures downstream components remain within safe operating voltage limits during IEC61000-4-2 ESD events. The ESD5Z6.0T5G maintains consistent clamping performance across temperature and lifetime, validated per AEC-Q101 stress testing protocols.
Is ESD5Z6.0T5G suitable for USB 2.0 data line protection?
Yes, ESD5Z6.0T5G is well-suited for USB 2.0 data line protection due to its 70 pF capacitance at 0 V, which minimizes signal integrity impact on 480 Mbps differential signaling. Its 6.0 V VRWM aligns with standard 5 V USB power domains, and 12.4 V clamping voltage prevents transceiver damage during ±8 kV contact ESD. The ESD5Z6.0T5G is widely deployed in certified smartphone and accessory designs for this purpose.
What package type does ESD5Z6.0T5G use?
ESD5Z6.0T5G uses the SOD-523 package (case 502), measuring 1.20 mm × 0.80 mm × 0.60 mm with a single cathode band marking. This ultra-compact outline supports high-density PCB layouts and is compatible with standard reflow soldering profiles up to 260 °C. The ESD5Z6.0T5G's SOD-523 footprint is industry-standard for discrete ESD diodes in portable electronics.
Does ESD5Z6.0T5G meet automotive qualification standards?
The SZ-prefix variant (e.g., SZESD5Z6.0T5G) is AEC-Q101 qualified and PPAP capable, but the standard ESD5Z6.0T5G is not automotive-qualified. For automotive applications requiring AEC-Q101 compliance, the SZESD5Z6.0T5G must be selected. The ESD5Z6.0T5G itself is rated for −55 °C to +150 °C junction temperature and meets IEC61000-4-2 Level 4, making it appropriate for industrial and consumer-grade designs.
How does ESD5Z6.0T5G compare to ESD5Z5.0T5G in terms of voltage rating?
ESD5Z6.0T5G has a 6.0 V working peak reverse voltage (VRWM), while ESD5Z5.0T5G has a 5.0 V VRWM - making the former better suited for 5 V logic rails with tighter noise margins or higher supply tolerance. Both share identical SOD-523 packaging and low-leakage design, but ESD5Z6.0T5G provides greater standoff headroom, reducing risk of premature conduction in noisy environments. The ESD5Z6.0T5G also exhibits slightly lower capacitance (70 pF vs. 80 pF), improving high-frequency performance.
ESD5Z6.0T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-79, SOD-523
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6V (Max)
- Voltage - Breakdown (Min):
- 6.8V
- Voltage - Clamping (Max) @ Ipp:
- 20.5V
- Current - Peak Pulse (10/1000µs):
- 8.8A (8/20µs)
- Power - Peak Pulse:
- 181W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 70pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-523
ESD5Z6.0T5G FAQ
1.How can I place an order for ESD5Z6.0T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD5Z6.0T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD5Z6.0T5G reliable?
The price and inventory of ESD5Z6.0T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD5Z6.0T5G is usually 5 days.
3.What payment methods are accepted for ESD5Z6.0T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD5Z6.0T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD5Z6.0T5G?
ESD5Z6.0T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD5Z6.0T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD5Z6.0T5G?
For technical support, including ESD5Z6.0T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD5Z6.0T5G requirements.
6.How does Aetrix verify that ESD5Z6.0T5G is sourced from the original manufacturer or authorized distributors?
All ESD5Z6.0T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD5Z6.0T5G meets industry standards.
7.What is the process for return or replacement of ESD5Z6.0T5G?
All ESD5Z6.0T5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD5Z6.0T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD5Z6.0T5G part is unused and in its original packaging.
Return procedure for ESD5Z6.0T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD5Z6.0T5G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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