onsemi ESD7124MUTBG

Overview

ESD7124MUTBG from onsemi is a 4-channel low-capacitance dual-voltage ESD and surge protection array in a 6-lead UDFN package. It provides ±25 kV IEC 61000−4−2 contact discharge protection, features 3 low-voltage (3.3 V) I/O channels with 0.35 pF typical capacitance, and one high-voltage (12 V) supply-rail channel rated for 100 A (8/20 µs), used in USB 2.0 data line protection.

For engineers reviewing the ESD7124MUTBG datasheet, pinout, applications, or equivalent options, key selection criteria include channel-specific clamping voltage (9.5 V LV / 27 V HV at max I_pp), ultra-low I/O capacitance (<0.5 pF), dual-rail voltage support, IEC 61000−4−5 surge compliance, and UDFN-6 footprint compatibility with high-speed interfaces up to 480 Mbps.

Technical Context

The ESD7124MUTBG integrates three low-voltage Zener diodes (V_RWM = 3.3 V) for signal-line protection and one high-voltage Zener (V_RWM = 12 V) for V_CC rail clamping. Each LV channel exhibits ≤0.5 pF junction capacitance at 1 MHz and clamps to ≤9.5 V at ±16 A TLP, enabling use on USB 2.0 differential pairs without signal integrity degradation.

Its architecture supports simultaneous multi-threshold transient suppression: LV channels trigger at ~5.5 V (V_BR min), while the HV channel triggers at ~13.3 V (V_BR min), ensuring selective response to ESD events on data versus power lines. The exposed die attach pad (Pin 5/6 GND) provides low-inductance grounding critical for high-frequency ESD current shunting.

Key Specifications

Pinout & Package

ESD7124MUTBG uses a 6-lead UDFN package (Case 517CS) with an exposed die attach pad (DAP) on the bottom surface that must be soldered to ground for optimal ESD current path and thermal performance. Pin 1 is marked by a dot or notch on the top surface; pins are numbered counter-clockwise when viewed from the top (pins down).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with TPD4E05U06DQAR and SP1003-04UTG, ESD7124MUTBG uniquely delivers dual-voltage capability (3.3 V + 12 V), ±25 kV ESD rating, and IEC 61000−4−5 surge compliance in the same UDFN-6 footprint-making it the only option for compact, high-reliability USB ports requiring both data-line and power-rail hardening.

Availability

ESD7124MUTBG is available at Aetrix Electronics and suitable for USB 2.0 interface protection, industrial sensor signal conditioning, and automotive infotainment system design requiring stable component supply and long-term lifecycle assurance.

Supply support for ESD7124MUTBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, medical, and IoT applications.

The ESD7124MUTBG belongs to onsemi's transient voltage suppression portfolio, engineered specifically for high-speed digital interface protection where ultra-low capacitance and multi-rail voltage support are mandatory.

FAQ

What is the maximum clamping voltage of ESD7124MUTBG on its low-voltage channels during an ESD event?

The ESD7124MUTBG clamps low-voltage channels (Pins 2–4) to a maximum of 24.9 V under ±16 A TLP conditions, which corresponds to an IEC 61000−4−2 Level 4 equivalent strike. This value is measured at the device terminals and ensures downstream ICs see limited overvoltage during real-world ESD events. The ESD7124MUTBG maintains this clamping performance across its full operating temperature range of –55 °C to +125 °C.

Can ESD7124MUTBG protect both data lines and a 12 V supply rail simultaneously?

Yes, the ESD7124MUTBG is explicitly designed for dual-voltage operation: Pins 2–4 provide low-voltage ESD protection for data lines (V_RWM = 3.3 V), while Pin 1 (V_CC) protects a 12 V supply rail (V_RWM = 12 V). Its internal structure isolates these paths to prevent interaction. The ESD7124MUTBG achieves this in a single UDFN-6 package without external components, reducing bill-of-materials count and PCB area versus discrete solutions.

Is the exposed pad on the bottom of the ESD7124MUTBG package required to be grounded?

Yes, the die attach pad (DAP) on the underside of the ESD7124MUTBG package must be soldered to a solid PCB ground plane. This pad serves as the primary low-inductance return path for ESD current and contributes significantly to thermal dissipation. Leaving it unconnected degrades clamping performance and may cause failure under high-energy transients. The ESD7124MUTBG datasheet specifies that Pins 5 and 6 are also GND connections, forming a three-point ground system with the DAP.

Does ESD7124MUTBG meet IEC 61000−4−5 surge immunity requirements?

Yes, the ESD7124MUTBG is rated for 100 A (8/20 µs) per IEC 61000−4−5 Level 3 (lightning surge) on its high-voltage channel (Pin 1). This rating applies to the V_CC line and is validated using standardized surge waveforms. The ESD7124MUTBG does not claim IEC 61000−4−5 compliance on its LV channels (Pins 2–4); those are optimized for ESD, not surge. System-level surge protection requires additional components on data lines if needed.

What is the typical junction capacitance of ESD7124MUTBG on its data-line channels?

The typical junction capacitance of ESD7124MUTBG on Pins 2–4 is 0.35 pF at 1 MHz and 0 V bias, with a maximum of 0.5 pF. This ultra-low value is measured differentially and enables use on 480 Mbps USB 2.0 links without measurable insertion loss or signal rise-time degradation. The ESD7124MUTBG maintains consistent capacitance across process and temperature variations, supporting robust high-speed interface design.