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onsemi ESD7181MUT5G
- Part No.:
- ESD7181MUT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
ESD7181MUT5G.pdf
- Description:
- TVS DIODE 18.5VWM 35VC 2X3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:11,433
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Product details
Overview
ESD7181MUT5G from onsemi is a bidirectional ESD protection diode in a 0201 X3DFN2 package, designed for ultra-low-capacitance RF signal line protection. It delivers 0.3 pF typical junction capacitance at 0 V, ±18.5 V working voltage, <1 nA reverse leakage, and clamps to ≤41.1 V at ±16 A TLP pulse-ideal for antenna, PA, and NFC front-end protection where board space and signal integrity are critical.
For engineers reviewing the ESD7181MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include IEC 61000-4-2 Level 4 (±12 kV contact) compliance, sub-0.5 pF capacitance linearity over voltage, dynamic resistance <0.44 Ω, and verified performance up to 8.5 GHz insertion loss of −0.335 dB.
Technical Context
The ESD7181MUT5G employs a silicon avalanche diode structure optimized for fast response (<1 ns) and low parasitic capacitance. Its bidirectional clamping architecture protects AC-coupled RF paths without polarity constraints, and its 0.62 mm × 0.32 mm footprint enables placement directly at RF connectors or IC pins.
It meets IEC 61000-4-2 Level 4 (±12 kV contact, ±15 kV air) and IEC 61000-4-5 (1 A surge), with clamping validated via TLP testing at ±8 A and ±16 A pulses. The device's capacitance remains stable from DC to 1 GHz (0.1–0.5 pF), supporting high-frequency applications including 5G sub-6 GHz and Wi-Fi 6E front ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance @ 0 V, 1 MHz | 0.3 pF typical - preserves RF signal integrity in 50 Ω impedance paths up to 8.5 GHz |
| Working Voltage (VRWM) | ±18.5 V - supports common RF bias rails and AC-coupled signal lines |
| Clamping Voltage @ ±16 A TLP | +40.4 V / −41.1 V - limits transient overvoltage to protect sensitive GaAs/GaN PAs and LNAs |
| Leakage Current @ VRWM | <1 nA typical - avoids DC offset or power loss in high-impedance RF sensing nodes |
| ESD Rating (IEC 61000-4-2) | ±12 kV contact, ±15 kV air - exceeds Level 4 immunity for handheld and portable RF devices |
| Dynamic Resistance (RDYN) | 0.44 Ω - minimizes voltage overshoot during fast ESD transients |
| Package | X3DFN2 (0.62 × 0.32 × 0.24 mm, 0.35 mm pitch) - fits 0201 land pattern, enabling co-location with RF ICs |
Pinout & Package
ESD7181MUT5G uses the X3DFN2 (Case 152AF) two-terminal micro-package with no polarity marking. Both terminals are symmetrical and functionally identical due to bidirectional design. The package height is 0.24 mm (max), compatible with automated SMT assembly and conformal coating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 | Anode/Cathode (bidirectional) | Connects to protected signal line; interchangeable with Terminal 2 due to symmetric layout |
| Terminal 2 | Anode/Cathode (bidirectional) | Connects to ground reference; functions identically to Terminal 1 under positive/negative ESD events |
Key Features
| Feature | Design Value |
|---|---|
| Capacitance linearity over voltage | 0.1–0.5 pF across 0–18 V bias - maintains consistent impedance matching in variable-bias RF switches |
| Insertion loss @ 8.5 GHz | −0.335 dB - negligible RF power attenuation in mmWave and Wi-Fi 6E bands |
| Low body height (0.24 mm) | Enables stacking under shield cans and compatibility with ultra-thin mobile form factors |
| AEC-Q101 qualified (SZ variant) | Validated for automotive infotainment and telematics RF modules requiring extended temperature reliability |
| Pb-free, halogen-free, RoHS compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) and reflow profile compatibility |
Applications
| Antenna ESD Protection | RF Power Amplifier Protection |
|---|---|
Use Scenario: Protecting cellular/Wi-Fi antenna ports from user-handling ESD in smartphones and IoT gateways. IC Role / Device Role / Timing Role: Bidirectional shunt clamp placed between antenna feedline and ground, operating passively with zero bias. Use Value: 0.3 pF capacitance prevents detuning of λ/4 matching networks; ±12 kV contact rating ensures robustness against real-world discharge events. | Use Scenario: Safeguarding GaAs/GaN RF power amplifier output stages from board-level ESD during handling or cable mating. IC Role / Device Role / Timing Role: Low-capacitance transient voltage suppressor mounted directly at PA output pad before matching network. Use Value: Clamping ≤41.1 V at ±16 A TLP prevents gate oxide damage; sub-0.5 pF loading avoids gain compression or instability. |
| NFC Front-End Protection | Wireless Charging Coil Interface |
Use Scenario: Shielding 13.56 MHz NFC reader/writer ICs and loop antennas from ESD during card tap or metal surface contact. IC Role / Device Role / Timing Role: Signal-line protector on differential NFC data lines (e.g., CLF, RF_IN/OUT), placed adjacent to IC bond pads. Use Value: Capacitance stability over voltage ensures consistent 13.56 MHz resonance; <1 nA leakage avoids DC bias shift in analog front-end amplifiers. | Use Scenario: Protecting resonant LC tank circuits and driver ICs in Qi-compliant wireless charging transmitters from ESD induced by coil proximity or foreign object detection events. IC Role / Device Role / Timing Role: Low-loss shunt diode across primary coil terminals or between driver output and tank node. Use Value: 0.44 Ω dynamic resistance minimizes energy dissipation during fast transients; 0.3 pF capacitance avoids detuning of 100–205 kHz resonant frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E007DBVR | 0.65 pF typical capacitance; 5-pin SOT-553 package; unidirectional configuration | Requires separate anode/cathode routing; higher capacitance limits use above 2.4 GHz | Select when multi-line protection (2 channels) is needed and layout allows larger footprint |
| SP1002-01WTG | 0.25 pF typical capacitance; 0201 DFN package; ±12 kV IEC 61000-4-2 rating; higher clamping (~45 V @ 16 A) | Slightly lower capacitance but less robust clamping; not AEC-Q101 qualified | Prefer for cost-sensitive consumer RF designs where clamping margin >40 V is acceptable |
Compared with TPD2E007DBVR and SP1002-01WTG, ESD7181MUT5G offers superior capacitance linearity and tighter clamping (≤41.1 V) in the same 0201 footprint, making it optimal for high-frequency, space-constrained RF protection where signal fidelity and transient suppression must coexist.
Availability
ESD7181MUT5G is available at Aetrix Electronics and suitable for RF front-end protection, wireless charging interface design, and NFC system integration requiring stable component supply and full traceability.
Supply support for ESD7181MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7181MUT5G belongs to onsemi's Micro-Packaged ESD Protection Diode family, engineered specifically for ultra-low-capacitance, high-frequency signal line protection in next-generation wireless and connectivity systems.
FAQ
What is the maximum clamping voltage of ESD7181MUT5G under IEC 61000-4-2 ±16 kV contact discharge?
The ESD7181MUT5G does not specify clamping voltage at ±16 kV contact discharge in its datasheet. Instead, clamping is characterized using Transmission Line Pulse (TLP) testing: at ±16 A TLP pulse, clamping voltage is +40.4 V and −41.1 V. These values represent the actual voltage seen by protected circuitry during fast ESD transients and are used to validate protection margin for sensitive RF components in ESD7181MUT5G-based designs.
Is ESD7181MUT5G suitable for protecting 5G NR sub-6 GHz antenna ports?
Yes, ESD7181MUT5G is suitable for 5G NR sub-6 GHz antenna port protection. Its 0.3 pF typical capacitance at 0 V and stable CV curve up to 1 GHz ensure minimal impedance mismatch in 50 Ω RF paths. Measured insertion loss of −0.335 dB at 8.5 GHz confirms usability beyond 3.8 GHz, and its ±12 kV contact ESD rating meets IEC 61000-4-2 Level 4 requirements for handheld 5G devices using ESD7181MUT5G.
Does ESD7181MUT5G require external bias or control signals to operate?
No, ESD7181MUT5G requires no external bias or control signals. It operates as a passive, bidirectional avalanche diode that conducts only during ESD or transient overvoltage events exceeding its breakdown threshold (~20.5 V). In normal operation, it presents <1 nA leakage and 0.3 pF capacitance, making it fully transparent to RF signals-no power supply, enable pin, or configuration is needed for ESD7181MUT5G functionality.
What is the thermal resistance (RJA) of ESD7181MUT5G, and how does it affect PCB layout?
The thermal resistance (RJA) of ESD7181MUT5G is 400 °C/W when mounted on FR-4 PCB with recommended minimum pad size. Due to its low power dissipation (250 mW max) and short-duration ESD pulses, self-heating is negligible. However, maintaining the specified pad layout per Case 152AF drawing ensures reliable solder joint integrity and mechanical stability-critical for vibration-prone RF modules using ESD7181MUT5G.
Can ESD7181MUT5G be used in automotive applications?
The standard ESD7181MUT5G is not AEC-Q101 qualified; however, the SZESD7181MUT5G variant is. Both share identical electrical and mechanical specifications, but only SZESD7181MUT5G undergoes automotive-grade stress testing and PPAP documentation. For automotive infotainment or telematics RF modules, designers must specify SZESD7181MUT5G-not ESD7181MUT5G-to meet qualification requirements while retaining full functional equivalence.
ESD7181MUT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 18.5V (Max)
- Voltage - Breakdown (Min):
- 20.5V
- Voltage - Clamping (Max) @ Ipp:
- 35V (Typ)
- Current - Peak Pulse (10/1000µs):
- 16A
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.3pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X3DFN (0.6x0.3) (0201)
ESD7181MUT5G FAQ
1.How can I place an order for ESD7181MUT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7181MUT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7181MUT5G reliable?
The price and inventory of ESD7181MUT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7181MUT5G is usually 5 days.
3.What payment methods are accepted for ESD7181MUT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7181MUT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7181MUT5G?
ESD7181MUT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7181MUT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7181MUT5G?
For technical support, including ESD7181MUT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7181MUT5G requirements.
6.How does Aetrix verify that ESD7181MUT5G is sourced from the original manufacturer or authorized distributors?
All ESD7181MUT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7181MUT5G meets industry standards.
7.What is the process for return or replacement of ESD7181MUT5G?
All ESD7181MUT5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7181MUT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7181MUT5G part is unused and in its original packaging.
Return procedure for ESD7181MUT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7181MUT5G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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