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onsemi ESD7241N2T5G
- Part No.:
- ESD7241N2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
ESD7241N2T5G.pdf
- Description:
- TVS DIODE 24VWM 48VC 2X2DFN
- Quantity:
- Payment:
- Shipping:
Inventory:17,583
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Product details
Overview
ESD7241N2T5G from onsemi is a bi-directional ultra-low capacitance ESD protection diode in X2DFN2 package, rated for 24 V working voltage, <1.0 pF capacitance at 1 MHz, 38 V clamping voltage at 8 A TLP, and ±28 kV IEC61000-4-2 contact ESD protection-designed for RF antenna line protection in wireless handsets.
For engineers reviewing the ESD7241N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include sub-1 pF capacitance stability over bias, low insertion loss (<0.15 dB @ 1 GHz), tight clamping performance (38 V @ 8 A), and compatibility with high-frequency signal paths requiring minimal signal distortion.
Technical Context
The ESD7241N2T5G employs a silicon avalanche diode structure optimized for bi-directional transient suppression without DC bias dependency. Its capacitance remains linear from 0 to 24 V reverse bias, enabling stable RF impedance matching across operating voltage ranges.
Clamping behavior is characterized using Transmission Line Pulse (TLP) testing per ANSI/ESD STM5.5.1 (Z₀ = 50 Ω, tₚ = 100 ns), delivering verified 38 V clamping at 8 A and 48 V at 16 A-critical for protecting sensitive RF front-end components against fast-rising ESD transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (CJ) | 0.7 pF @ 1 GHz - ensures negligible RF signal loading in antenna feedlines up to 3 GHz |
| Clamping Voltage (VC) | 38 V @ 8 A TLP - limits voltage seen by protected IC during ESD event to safe level for 24 V-rated RF transceivers |
| Working Voltage (VRWM) | 24 V - matches common RF power amplifier supply rails and USB 3.x VBUS levels |
| ESD Rating | ±28 kV contact per IEC61000-4-2 - exceeds Level 4 immunity requirement for handheld consumer devices |
| Insertion Loss | 0.15 dB @ 1 GHz - preserves signal integrity in LTE/5G antenna paths with minimal attenuation |
| Leakage Current (IR) | <0.5 µA @ 24 V - avoids DC loading of high-impedance RF detector or tuner inputs |
| Package | X2DFN2 (1.00 × 0.60 × 0.37 mm, 0.65 mm pitch) - enables placement directly at connector or antenna feedpoint with minimal parasitic inductance |
Pinout & Package
X2DFN2 is a 2-terminal, bottom-wettable, leadless DFN package with exposed thermal pad. Dimensions: 1.00 mm × 0.60 mm × 0.37 mm, 0.65 mm pin pitch. Optimized for high-frequency layout with symmetric geometry and minimal trace inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode / Cathode (Bi-directional) | Terminal A of symmetrical avalanche junction - connects to signal line (e.g., antenna feed); no polarity sensitivity |
| Pin 2 | Cathode / Anode (Bi-directional) | Terminal B of symmetrical avalanche junction - connects to ground reference; forms low-inductance path to GND plane |
Key Features
| Feature | Design Value |
|---|---|
| Capacitance linearity over voltage | Stable 0.7–1.0 pF from 0–24 V reverse bias - maintains consistent impedance match in tunable RF front-ends |
| Ultra-low insertion loss | 0.15 dB @ 1 GHz - preserves SNR and gain in cellular band antenna paths without compensation |
| IEC61000-4-2 Level 4 compliance | ±28 kV contact discharge - meets highest ESD immunity tier for consumer wireless terminals |
| Low dynamic resistance | 0.84 Ω (TLP) - enables rapid clamping response with minimal voltage overshoot during sub-nanosecond ESD events |
| Wettable flank compatible | Non-applicable for ESD7241N2T5G (X2DFN2); SZESD7241MXWT5G variant uses X2DFNW2 - supports AOI inspection for automotive-grade builds |
Applications
| Cellular Antenna Feed Protection | NFC Loop Antenna Protection |
|---|---|
Use Scenario: Protecting main antenna feedline between RF transceiver and external antenna in 4G/5G smartphones. IC Role / Device Role / Timing Role: Bi-directional ESD clamp placed in series with RF signal path, shunting transients to ground before reaching PA/LNA. Use Value: Sub-1 pF capacitance prevents detuning of antenna matching network; 38 V clamping protects 24 V-rated power amplifiers from damage. | Use Scenario: Shielding 13.56 MHz NFC loop antenna traces from user-hand ESD during tap interactions. IC Role / Device Role / Timing Role: Low-capacitance shunt protector mounted at antenna connector interface to suppress ±8 kV HBM and ±28 kV IEC contact discharges. Use Value: 0.7 pF @ 1 GHz minimizes Q-factor degradation; <0.5 µA leakage avoids DC offset in resonant tank circuitry. |
| USB 3.x VBUS Line Protection | Wi-Fi 2.4/5 GHz Front-End Protection |
Use Scenario: Safeguarding USB 3.x Type-C receptacle VBUS line against hot-plug ESD and cable discharge events. IC Role / Device Role / Timing Role: Standoff diode connected between VBUS and chassis ground, clamping transients before reaching USB controller power rail. Use Value: 24 V working voltage aligns with USB 3.x VBUS nominal; ±28 kV rating exceeds USB-IF ESD test requirements. | Use Scenario: Protecting Wi-Fi/BT combo module RF input/output pins in laptops and IoT gateways. IC Role / Device Role / Timing Role: Series-connected ESD suppressor on Tx/Rx lines between transceiver and antenna switch or filter. Use Value: 0.15 dB insertion loss at 1 GHz preserves link budget; 48 V clamping at 16 A handles multi-pulse lightning surge coupling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7205MUTAG | 0.35 pF @ 1 GHz, 12 V VRWM, 22 V clamping @ 8 A TLP | Lower voltage rating suits 3.3–5 V logic lines (e.g., USB data, HDMI), not 24 V RF paths | Select when protecting low-voltage high-speed digital interfaces where ultra-low capacitance dominates over high-voltage clamping. |
| SZESD7241MXWT5G | Identical electrical specs; X2DFNW2 package with wettable flanks | Required for automotive AEC-Q101 PPAP builds needing AOI-compatible solder joint inspection | Choose for automotive infotainment or telematics modules requiring certified process control and optical solder verification. |
Compared with ESD7241N2T5G, ESD7205MUTAG offers lower capacitance but insufficient voltage headroom for antenna lines, while SZESD7241MXWT5G delivers identical protection performance with enhanced manufacturability for automotive-grade production.
Availability
ESD7241N2T5G is available at Aetrix Electronics and suitable for cellular handset antenna protection, NFC interface safeguarding, and USB 3.x VBUS line hardening requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for ESD7241N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient electronics, serving automotive, industrial, cloud, and consumer markets with discrete, analog, and power management solutions.
The ESD7241N2T5G belongs to onsemi's ultra-low-capacitance RF ESD protection family, engineered specifically for high-frequency signal integrity preservation in antenna, NFC, and high-speed interface applications.
FAQ
What is the maximum working voltage rating for ESD7241N2T5G?
The ESD7241N2T5G has a specified working peak reverse voltage (VRWM) of 24 V, confirmed in the Electrical Characteristics table under TA = 25°C conditions. This rating defines the maximum continuous DC or RMS voltage the device can withstand without significant leakage or degradation, making it suitable for 24 V RF power amplifier supply lines and USB 3.x VBUS applications. The ESD7241N2T5G maintains stable performance up to this voltage threshold.
Does ESD7241N2T5G support bi-directional ESD protection?
Yes, the ESD7241N2T5G is explicitly designed as a bi-directional ESD protection diode, with symmetrical IV characteristics verified in Figures 11 and 12 of the datasheet. It provides identical clamping performance from Pin 1 to Pin 2 and Pin 2 to Pin 1, enabling placement in AC-coupled or floating RF signal paths without polarity concerns. This symmetry is integral to the ESD7241N2T5G's function in antenna feedline protection.
What is the typical capacitance of ESD7241N2T5G at 1 GHz?
The typical junction capacitance of ESD7241N2T5G is 0.7 pF at 1 GHz and 0 V bias, as stated in the Electrical Characteristics table. This ultra-low value is measured under RF-relevant conditions and reflects the device's optimized design for minimal signal loading in high-frequency applications such as LTE and 5G antenna paths. The ESD7241N2T5G maintains this low capacitance across its operational voltage range.
How does ESD7241N2T5G perform under IEC61000-4-2 ESD testing?
The ESD7241N2T5G achieves ±28 kV contact discharge per IEC61000-4-2 Level 4, as documented in both the Features and Maximum Ratings sections. This performance is validated using the standard 150 pF/330 Ω network and correlates with its 38 V clamping voltage at 8 A TLP current. The ESD7241N2T5G reliably suppresses fast-rising ESD transients without failure or parameter shift across multiple stress cycles.
Is ESD7241N2T5G RoHS compliant and lead-free?
Yes, ESD7241N2T5G is Pb-free, halogen/BFR-free, and RoHS compliant, as explicitly stated in the Features section of the datasheet. The "G" suffix in the part number denotes RoHS-compliant packaging, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount assembly. All manufacturing and material declarations for ESD7241N2T5G align with current environmental compliance standards.
ESD7241N2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 24V (Max)
- Voltage - Breakdown (Min):
- 24.3V
- Voltage - Clamping (Max) @ Ipp:
- 48V (Typ)
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 1pF @ 1MHz (Max)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X2DFN (1x0.6)
ESD7241N2T5G FAQ
1.How can I place an order for ESD7241N2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7241N2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7241N2T5G reliable?
The price and inventory of ESD7241N2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7241N2T5G is usually 5 days.
3.What payment methods are accepted for ESD7241N2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7241N2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7241N2T5G?
ESD7241N2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7241N2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7241N2T5G?
For technical support, including ESD7241N2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7241N2T5G requirements.
6.How does Aetrix verify that ESD7241N2T5G is sourced from the original manufacturer or authorized distributors?
All ESD7241N2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7241N2T5G meets industry standards.
7.What is the process for return or replacement of ESD7241N2T5G?
All ESD7241N2T5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7241N2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7241N2T5G part is unused and in its original packaging.
Return procedure for ESD7241N2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7241N2T5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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