My Inquiry
My Account
onsemi ESD7351HT1G
- Part No.:
- ESD7351HT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
ESD7351HT1G.pdf
- Description:
- TVS DIODE 3.3VWM SOD323
- Quantity:
- Payment:
- Shipping:
Inventory:20,809
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ESD7351HT1G from onsemi is a unidirectional ESD protection diode in SOD−323 package, designed for ultra-low-capacitance (0.43–0.6 pF) transient suppression on high-speed signal lines. It features 3.3 V stand-off voltage, 8.0 V clamping at 1 A, <1 nA leakage at VRWM, and IEC61000−4−2 Level 4 (±20 kV contact/air) compliance - ideal for USB 2.0 high-speed and RF antenna line protection.
For engineers reviewing the ESD7351HT1G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 10 V at 3 A, sub-0.6 pF capacitance at 1 MHz, dynamic resistance below 1 Ω, AEC−Q101 qualification, and SOD−323 footprint compatibility with space-constrained RF front-end layouts.
Technical Context
The ESD7351HT1G implements a single-channel unidirectional TVS structure optimized for low-capacitance signal integrity preservation. Its junction capacitance remains stable below 0.6 pF up to 1 GHz, and its TLP-measured dynamic resistance is 0.35 Ω, enabling rapid voltage clamping during sub-nanosecond ESD transients.
It operates as a cathode-grounded clamp: Pin 1 (cathode) connects to protected signal line, Pin 2 (anode) to ground. Breakdown occurs at 5.0 V (IT = 1 mA), with clamping voltage tightly controlled at 8.0 V (IPP = 1 A) and 10 V (IPP = 3 A), ensuring robust protection without signal distortion in RF switching and antenna paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage | 3.3 V - maximum continuous reverse voltage before leakage exceeds 1 nA; sets operating margin for 3.3 V logic and RF bias rails. |
| Clamping Voltage @ 1 A | 8.0 V - peak voltage across device during 1 A TLP pulse; ensures downstream ICs see <8 V stress during ESD events. |
| Junction Capacitance | 0.43–0.6 pF @ 0 V, 1 MHz - preserves signal integrity in USB 2.0 (480 Mbps) and LTE/WiFi antenna paths with minimal insertion loss. |
| Dynamic Resistance | 0.35 Ω - measured via TLP; enables fast energy shunting and low-voltage overshoot during fast-rising ESD pulses. |
| ESD Rating | IEC61000−4−2 Level 4: ±20 kV contact / ±20 kV air - meets highest system-level ESD immunity requirement for consumer and automotive interfaces. |
| Leakage Current | <1.0 nA @ 3.3 V - prevents DC loading of sensitive RF amplifier inputs and antenna matching networks. |
| Response Time | <1 ns - intrinsic diode junction speed ensures clamping activation before ESD pulse peak reaches protected circuitry. |
Pinout & Package
SOD−323 package (1.70 × 1.25 × 0.85 mm), surface-mount, polarity-marked with cathode band. Compact footprint supports dense RF module layouts and 0201-equivalent board area utilization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Protected Signal Input | Connects to high-speed line (e.g., USB D+, antenna feed); clamps positive transients to ground when voltage exceeds 3.3 V. |
| 2 (Anode) | Ground Reference | Low-inductance connection to system ground plane; critical for maintaining sub-1 ns response and minimizing ground bounce during ESD discharge. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.43–0.6 pF enables use on 480 Mbps USB 2.0 differential pairs and 2.4/5 GHz WiFi antenna lines without degrading return loss or group delay. |
| Sub-10 V clamping at 3 A | 10 V clamping at 3 A IPP ensures microcontroller I/Os and RF switches remain within absolute maximum ratings during worst-case ESD strikes. |
| AEC−Q101 qualified | Validated for automotive infotainment and telematics modules requiring extended temperature operation (−55 °C to +150 °C) and PPAP compliance. |
| Low dynamic resistance | 0.35 Ω TLP-measured RDYN minimizes voltage overshoot and improves energy dissipation efficiency during multi-kV ESD events. |
| Pb-free, RoHS-compliant | Meets J-STD-609 Category 1 moisture sensitivity (MSL1) and halogen-free requirements for industrial and medical-grade assemblies. |
Applications
| USB 2.0 High-Speed Interface | Cellular Antenna Feed Line |
|---|---|
Use Scenario: Protecting D+ and D− lines in portable USB peripherals against user-hand ESD events during cable insertion. IC Role / Device Role: Unidirectional clamping diode placed between connector and USB transceiver PHY. Use Value: 0.6 pF capacitance avoids signal integrity degradation at 480 Mbps; 8.0 V clamping prevents PHY latch-up or oxide damage. |
Use Scenario: Shielding LTE/5G antenna switch outputs from ESD induced by human touch on metal bezels or chassis. IC Role / Device Role: Series-connected ESD clamp on antenna path between PA output and antenna tuner. Use Value: Sub-0.6 pF capacitance maintains VSWR <1.5:1 up to 3.8 GHz; 20 kV IEC contact rating covers real-world drop-test ESD exposure. |
| NFC Loop Antenna Protection | Automotive Infotainment RF Front-End |
Use Scenario: Safeguarding 13.56 MHz NFC reader coil terminals from ESD during card-swipe or tap interactions. IC Role / Device Role: Low-capacitance bidirectional protection (configured as unidirectional clamp to ground) on differential loop driver outputs. Use Value: 0.43 pF typical capacitance preserves Q-factor >15 in 1 μH loop; 5.0 V breakdown ensures no forward conduction during 3.3 V supply operation. |
Use Scenario: Protecting GNSS/GPS and AM/FM tuner inputs in automotive head units exposed to harsh ESD environments (e.g., dashboard mounting). IC Role / Device Role: Ground-referenced ESD clamp on coaxial RF input traces prior to LNA input. Use Value: AEC−Q101 qualification guarantees reliability at −40 °C to +105 °C ambient; 0.6 pF capacitance avoids detuning of 1.575 GHz GPS matching networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7351XV2T1G | SOD−523 package (1.20 × 0.80 × 0.60 mm); identical electrical specs but 30% smaller footprint and 0.2 mm lower profile. | Better suited for ultra-thin mobile devices and space-critical antenna modules where board height is constrained. | Select ESD7351XV2T1G when PCB real estate or Z-height is more critical than thermal mass; same clamping performance, lower parasitic inductance. |
| TPD2E001DRYR | Texas Instruments dual-channel unidirectional diode; 1.0 pF typical capacitance; 3.6 V stand-off; not AEC−Q101 qualified. | Lacks automotive qualification and has higher capacitance - unsuitable for >200 Mbps data lines or GPS antenna feeds. | Choose TPD2E001DRYR only for cost-sensitive non-automotive consumer USB ports where 1.0 pF capacitance is acceptable and AEC−Q101 is not required. |
Compared with ESD7351XV2T1G, the ESD7351HT1G offers greater thermal mass and slightly higher power handling (150 mW vs. ~100 mW), while TPD2E001DRYR trades off clamping precision and RF suitability for dual-channel integration - making ESD7351HT1G optimal for single-line, high-frequency, automotive-grade ESD protection.
Availability
ESD7351HT1G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, cellular antenna feed line safeguarding, and automotive RF front-end designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for ESD7351HT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and IoT applications.
The ESD7351HT1G belongs to onsemi's ESD7351 Series - engineered specifically for ultra-low-capacitance, high-frequency ESD protection in RF signal paths, antenna interfaces, and high-speed digital buses where traditional TVS diodes would degrade signal fidelity.
FAQ
What is the exact package type and dimensions of the ESD7351HT1G?
The ESD7351HT1G uses the SOD−323 package (Case 477), measuring 1.70 mm × 1.25 mm × 0.85 mm. It features a polarity band marking indicating Pin 1 as cathode and Pin 2 as anode. This compact outline supports high-density RF PCB layouts and is compatible with standard 0201 placement equipment.
Does the ESD7351HT1G meet automotive qualification standards?
Yes, the ESD7351HT1G is AEC−Q101 qualified and PPAP capable, as confirmed in the official onsemi datasheet (Rev. 6, February 2024). It operates across −55 °C to +150 °C junction temperature and is approved for use in automotive infotainment, telematics, and ADAS RF subsystems.
What is the clamping voltage behavior of the ESD7351HT1G under different ESD current levels?
The ESD7351HT1G clamps to 8.0 V at 1 A peak pulse current (IPP) and 10 V at 3 A IPP, per TLP testing. These values are measured using standardized transmission line pulse methodology and directly correlate to IEC61000−4−2 ±20 kV contact discharge performance, ensuring predictable protection margins.
Can the ESD7351HT1G be used on differential high-speed lines like USB 2.0 D+ and D−?
Yes, the ESD7351HT1G is routinely deployed on individual USB 2.0 differential lines due to its 0.43–0.6 pF capacitance, which introduces negligible skew or impedance mismatch. Each line requires one ESD7351HT1G (cathode to signal, anode to ground), preserving eye diagram integrity at 480 Mbps.
How does the ESD7351HT1G compare to generic bi-directional ESD diodes in RF applications?
Unlike bi-directional diodes, the unidirectional ESD7351HT1G eliminates forward conduction risk on positively biased RF lines (e.g., antenna tuner control pins), avoids DC leakage paths, and achieves lower capacitance. Its 0.43 pF typical value is up to 40% lower than comparable bi-directional parts, preserving RF matching network Q-factor.
ESD7351HT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-76, SOD-323
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.43pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-323
ESD7351HT1G FAQ
1.How can I place an order for ESD7351HT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7351HT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7351HT1G reliable?
The price and inventory of ESD7351HT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7351HT1G is usually 5 days.
3.What payment methods are accepted for ESD7351HT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7351HT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7351HT1G?
ESD7351HT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7351HT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7351HT1G?
For technical support, including ESD7351HT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7351HT1G requirements.
6.How does Aetrix verify that ESD7351HT1G is sourced from the original manufacturer or authorized distributors?
All ESD7351HT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7351HT1G meets industry standards.
7.What is the process for return or replacement of ESD7351HT1G?
All ESD7351HT1G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7351HT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7351HT1G part is unused and in its original packaging.
Return procedure for ESD7351HT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7351HT1G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
