onsemi ESD7351P2T5G
- Part No.:
- ESD7351P2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SOD-923
- Datasheet:
-
ESD7351P2T5G.pdf
- Description:
- TVS DIODE 3.3VWM SOD923
- Quantity:
- Payment:

- Shipping:

Inventory:4,630
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ESD7351P2T5G from onsemi is a unidirectional ESD protection diode in SOD-923 package, featuring 3.3 V stand-off voltage, 0.43–0.6 pF junction capacitance (at 0 V, 1 MHz to <1 GHz), <1 ns response time, and IEC 61000-4-2 Level 4 (±20 kV contact/air) compliance - designed for RF signal line protection in space-constrained high-frequency interfaces.
For engineers reviewing the ESD7351P2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for antenna/USB 2.0 high-speed lines, clamping voltage under 10 V at 3 A, AEC-Q101 qualification for automotive use, and SOD-923 footprint compatibility with board-area-sensitive layouts.
Technical Context
This device operates as a single-channel, unidirectional transient voltage suppressor with cathode-anode polarity. Its low dynamic resistance (<0.35 Ω) and fast TLP response enable effective clamping of ESD pulses before sensitive RF ICs experience overvoltage stress.
The ESD7351P2T5G is optimized for signal integrity preservation: junction capacitance remains stable below 0.6 pF up to 1 GHz, and insertion loss stays under −2 dB across 100 MHz–3 GHz - critical for antenna feedline and NFC front-end protection where impedance matching must be maintained.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage | 3.3 V - blocks normal operating voltage while remaining non-conductive during system operation. |
| Junction Capacitance | 0.43–0.6 pF @ 0 V, 1 MHz to <1 GHz - preserves signal integrity in USB 2.0 and RF antenna paths without loading. |
| Clamping Voltage | 8.0 V @ 1 A, 10 V @ 3 A - limits transient voltage seen by downstream RF switch or PA to safe levels during ESD events. |
| Response Time | <1 ns - activates before ESD pulse peak reaches protected circuitry, preventing latch-up or gate oxide damage. |
| ESD Rating | IEC 61000-4-2 Level 4: ±20 kV contact / ±20 kV air - meets highest system-level ESD immunity requirement for consumer and automotive end equipment. |
| Dynamic Resistance | <0.35 Ω - minimizes voltage overshoot during high-current transients by reducing IR drop across the protection path. |
Pinout & Package
SOD-923 (Case 514AB) surface-mount package: 0.80 mm × 0.60 mm × 0.37 mm, anode-cathode dual-terminal configuration with polarity band marking on cathode side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | ESD current sink node | Connected to protected I/O line; conducts transient current to GND when voltage exceeds VRWM + VBR. |
| 2 (Anode) | Reference/GND return path | Must be connected to low-impedance system ground to complete clamping path and minimize loop inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.43 pF typical at 0 V, 1 MHz - enables use on 480 Mbps USB 2.0 differential pairs without signal degradation. |
| AEC-Q101 qualified | Validated for automotive applications including infotainment antenna ports and telematics RF modules. |
| Low clamping voltage | 8.0 V at 1 A IPP - protects 3.3 V logic-level RF switches and LNA inputs from destructive overvoltage. |
| Pb-free, RoHS-compliant | Meets J-STD-609 Category 1 moisture sensitivity and IPC/JEDEC J-STD-020 reflow profile requirements. |
Applications
| RF Antenna Line Protection | USB 2.0 High-Speed Data Lines |
|---|---|
Use Scenario: Protecting cellular/Wi-Fi/GNSS antenna feedlines from ESD discharge during handling or connector mating. IC Role / Device Role / Timing Role: Unidirectional voltage clamp placed between antenna port and RF switch/LNA input. Use Value: Maintains sub-0.6 pF capacitance to avoid detuning antenna resonance and degrading return loss (S11). |
Use Scenario: Safeguarding D+ and D− pins of USB 2.0 transceivers against user-port ESD events. IC Role / Device Role / Timing Role: Low-capacitance shunt diode on each data line referenced to chassis ground. Use Value: Prevents eye diagram closure and bit error rate increase by limiting signal-line overshoot to <10 V during ±20 kV contact discharge. |
| NFC Interface Protection | Automotive Infotainment RF Modules |
Use Scenario: Shielding 13.56 MHz NFC reader coil and IC interface from electrostatic discharge during card tap events. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional diode (cathode to I/O, anode to GND) on NFC data and clock lines. Use Value: Ensures <0.5 dB insertion loss at 13.56 MHz and preserves near-field coupling efficiency without adding parasitic capacitance. |
Use Scenario: ESD hardening of AM/FM/DAB antenna inputs and tuner signal paths in automotive head units. IC Role / Device Role / Timing Role: AEC-Q101-qualified transient suppressor on RF front-end signal chains prior to tuner ICs. Use Value: Guarantees robustness against ISO 10605 and IEC 61000-4-2 ESD stress in harsh vehicle environments without compromising RF sensitivity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7351XV2T5G | SOD-523 package (1.20 × 0.80 mm); identical electrical specs but larger footprint than SOD-923. | Preferred where board assembly uses standard SOD-523 pick-and-place tooling or thermal relief requires slightly higher power dissipation margin. | Select ESD7351XV2T5G only if SOD-923 placement is incompatible with existing stencil or reflow profile. |
| CM1213A-03SR | 0.5 pF max capacitance, 3.3 V VRWM, but rated for 12 kV IEC 61000-4-2 (Level 3), not Level 4. | Suitable for cost-sensitive consumer electronics where ±15 kV ESD immunity suffices, not automotive or industrial-grade systems. | Choose CM1213A-03SR only when Level 4 immunity is not required and SOD-923 footprint compatibility is secondary to procurement availability. |
Compared with ESD7351XV2T5G and CM1213A-03SR, the ESD7351P2T5G delivers the smallest PCB footprint (0.80 × 0.60 mm), full Level 4 ESD robustness, and verified RF performance up to 3 GHz - making it the optimal choice for next-generation compact wireless modules requiring both miniaturization and automotive-grade reliability.
Availability
ESD7351P2T5G is available at Aetrix Electronics and suitable for RF antenna protection, USB 2.0 high-speed interface hardening, and automotive infotainment module design requiring stable component supply and long-term lifecycle support.
Supply support for ESD7351P2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7351 Series was developed specifically for ultra-low-capacitance ESD protection in high-frequency analog signal paths - targeting RF front-ends, high-speed serial interfaces, and miniaturized wireless devices where traditional TVS diodes introduce unacceptable signal distortion.
FAQ
What is the maximum clamping voltage of the ESD7351P2T5G at 3 A transient current?
The ESD7351P2T5G exhibits a maximum clamping voltage of 10 V when subjected to a 3 A peak pulse current (IPP = 3 A), per its Electrical Characteristics table. This value ensures downstream 3.3 V RF components remain within safe operating voltage margins during severe ESD events, and is measured using the IEC 61000-4-2 waveform-equivalent TLP test method. The ESD7351P2T5G maintains this performance consistently across its operating temperature range of −55 °C to +150 °C.
Is the ESD7351P2T5G suitable for protecting USB 2.0 high-speed differential pairs?
Yes, the ESD7351P2T5G is explicitly validated for USB 2.0 high-speed (480 Mbps) data line protection due to its 0.43–0.6 pF junction capacitance and <−2 dB insertion loss up to 3 GHz. Its low dynamic resistance (<0.35 Ω) prevents signal reflection and eye diagram distortion. The ESD7351P2T5G must be placed as close as possible to the USB connector with symmetric layout to preserve differential impedance - confirmed in onsemi Application Note AND8308/D.
Does the ESD7351P2T5G meet automotive qualification standards?
Yes, the ESD7351P2T5G carries the SZ prefix (SZESD7351P2T5G) and is AEC-Q101 qualified for automotive applications, with PPAP capability. It supports operation from −55 °C to +150 °C junction temperature and passes IEC 61000-4-2 Level 4 (±20 kV contact/air) testing - making it suitable for antenna ports, tuner inputs, and RF modules in automotive infotainment and telematics systems.
What is the package type and dimensions of the ESD7351P2T5G?
The ESD7351P2T5G is packaged in SOD-923 (Case 514AB), measuring 0.80 mm × 0.60 mm × 0.37 mm. This ultra-compact two-terminal surface-mount package features a cathode polarity band on pin 1 and is optimized for high-density PCB layouts. Its small size reduces parasitic inductance, enhancing high-frequency ESD suppression performance - distinct from the larger SOD-323 and SOD-523 variants in the same series.
How does the ESD7351P2T5G compare to generic TVS diodes in RF applications?
Unlike general-purpose TVS diodes with >10 pF capacitance, the ESD7351P2T5G delivers 0.43–0.6 pF capacitance - over 15× lower - enabling use on RF antenna lines and high-speed serial interfaces without degrading return loss or group delay. Its <1 ns response time and <0.35 Ω dynamic resistance provide superior transient suppression fidelity. The ESD7351P2T5G is engineered specifically for signal integrity preservation, whereas generic TVS diodes prioritize power handling over RF performance.
ESD7351P2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SOD-923
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.43pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-923
ESD7351P2T5G FAQ
1.How can I place an order for ESD7351P2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7351P2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7351P2T5G reliable?
The price and inventory of ESD7351P2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7351P2T5G is usually 5 days.
3.What payment methods are accepted for ESD7351P2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7351P2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7351P2T5G?
ESD7351P2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7351P2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7351P2T5G?
For technical support, including ESD7351P2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7351P2T5G requirements.
6.How does Aetrix verify that ESD7351P2T5G is sourced from the original manufacturer or authorized distributors?
All ESD7351P2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7351P2T5G meets industry standards.
7.What is the process for return or replacement of ESD7351P2T5G?
All ESD7351P2T5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7351P2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7351P2T5G part is unused and in its original packaging.
Return procedure for ESD7351P2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7351P2T5G Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
