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onsemi ESD7351XV2T1G
- Part No.:
- ESD7351XV2T1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
ESD7351XV2T1G.pdf
- Description:
- TVS DIODE 3.3VWM SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:16,685
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Product details
Overview
ESD7351XV2T1G from onsemi is a unidirectional ESD protection diode in SOD-523 package, featuring 3.3 V stand-off voltage, 0.6 pF max junction capacitance (I/O to GND), <1 ns response time, and IEC 61000-4-2 Level 4 (±20 kV contact/air) compliance - designed for RF signal line protection in space-constrained high-frequency interfaces like antenna feeds and USB 2.0 high-speed data lines.
For engineers reviewing the ESD7351XV2T1G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, validated SOD-523 terminal mapping, real-world RF ESD use cases, and AEC-Q101-qualified alternatives for automotive and industrial designs requiring ultra-low capacitance transient suppression.
Technical Context
This device operates as a single-channel, unidirectional clamping diode with cathode-anode polarity. Its low dynamic resistance (<0.35 Ω) and fast TLP response enable effective voltage limiting during sub-nanosecond ESD transients while maintaining signal integrity on RF paths up to 1 GHz.
The 3.3 V working peak reverse voltage aligns with 3.3 V I/O rail protection needs, and its 5.0 V breakdown voltage at 1 mA ensures robust margin above VRWM. Clamping voltage remains ≤8.0 V at 1 A IPP and ≤10 V at 3 A IPP per IEC 61000-4-5 waveform conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage | 3.3 V - matches standard 3.3 V logic and RF IC supply rails without leakage-induced bias shift. |
| Junction Capacitance | 0.43–0.6 pF @ 0 V, 1 MHz–<1 GHz - preserves impedance matching and insertion loss in 50 Ω RF traces (e.g., antenna feedlines). |
| Clamping Voltage | ≤8.0 V @ 1 A IPP - limits transient overvoltage to safe levels for sensitive RF front-end components such as LNAs and switches. |
| Response Time | <1 ns - engages before ESD energy couples into protected circuitry, critical for high-speed digital and RF interfaces. |
| ESD Rating | IEC 61000-4-2 Level 4: ±20 kV contact / ±20 kV air - meets highest system-level immunity requirements for handheld and automotive electronics. |
| Dynamic Resistance | <0.35 Ω - minimizes voltage overshoot during high-current ESD pulses by reducing IR drop across the protection path. |
| Leakage Current | <1.0 nA @ 3.3 V - avoids DC loading of high-impedance RF nodes and preserves battery life in always-on sensor circuits. |
Pinout & Package
SOD-523 package (1.20 × 0.80 × 0.60 mm), surface-mount, lead-free, RoHS-compliant, with cathode band marking. Optimized for minimal board area and high-density RF layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to protected I/O line; clamps positive transients to ground when forward-biased relative to pin 2. |
| 2 | Anode | Connected to system ground; completes conduction path during ESD events, enabling low-impedance discharge to earth reference. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.43–0.6 pF ensures <0.2 dB insertion loss at 2.4 GHz - essential for Wi-Fi/BT antenna line protection without degrading RF performance. |
| Sub-1 ns response | Enables clamping before ESD pulse energy propagates beyond the protection device - prevents latch-up or gate oxide damage in downstream ICs. |
| AEC-Q101 qualified | Validated for automotive under-hood and infotainment applications with temperature cycling, humidity, and mechanical shock compliance per PPAP requirements. |
| Low dynamic resistance | <0.35 Ω reduces clamping voltage rise under high-current ESD stress - improves margin for 1.8 V/3.3 V interface ICs with tight VDD tolerance. |
| Pb-free & halogen-free | Meets J-STD-609 Category 1 moisture sensitivity and IPC/JEDEC J-STD-020D reflow profile - supports lead-free manufacturing without reliability compromise. |
Applications
| RF Antenna Line Protection | USB 2.0 High-Speed Data Lines |
|---|---|
Use Scenario: Protecting cellular/Wi-Fi antenna feedlines from human-body-model ESD events during device handling or connector mating. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between antenna port and RF switch/LNA input. Use Value: 0.43 pF capacitance maintains VSWR <1.5:1 up to 2.7 GHz; 8.0 V clamping prevents LNA saturation or permanent damage. |
Use Scenario: Safeguarding D+ and D− differential pairs in portable USB peripherals against contact ESD during cable insertion. IC Role / Device Role / Timing Role: Dual-channel ESD clamp (one per line) with ground return path routed to chassis ground. Use Value: Sub-1 ns response ensures clamping occurs before USB 2.0 eye diagram closure; 3.3 V VRWM avoids signal distortion on 3.3 V-tolerant PHYs. |
| NFC Loop Antenna Interface | Automotive Infotainment RF Front-End |
Use Scenario: Shielding 13.56 MHz NFC reader coil connections from ESD induced by user touch on metal bezels or display frames. IC Role / Device Role / Timing Role: Single-line unidirectional ESD suppressor placed in series with each antenna trace segment. Use Value: 0.6 pF max capacitance prevents detuning of resonant LC tank; low leakage preserves Q-factor and read range. |
Use Scenario: Protecting AM/FM/DAB tuner inputs and GPS L1-band receivers in vehicle head units exposed to harsh ESD environments. IC Role / Device Role / Timing Role: AEC-Q101-qualified ESD diode mounted directly at RF connector entry point. Use Value: ±20 kV IEC 61000-4-2 rating meets ISO 10605 automotive test requirements; SOD-523 footprint enables placement within 2 mm of connector. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7351HT1G | SOD-323 package (1.70 × 1.25 mm); 0.6 pF max capacitance; same electrical specs but larger footprint and higher thermal mass. | Better power dissipation (150 mW vs. 120 mW typical for SOD-523), suited for less space-constrained PCBs with higher ambient temperatures. | Select ESD7351HT1G when layout allows larger package and thermal management prioritizes over RF parasitics. |
| ESD7351P2T5G | SOD-923 package (0.80 × 0.60 mm); identical 3.3 V VRWM and 0.6 pF capacitance; slightly lower power rating (100 mW). | Smallest available footprint in series; optimized for ultra-dense mobile RF modules where board area is more critical than thermal margin. | Choose ESD7351P2T5G only when SOD-523 cannot fit and RF frequency remains ≤1 GHz - verify layout clearance for micro-size termination. |
Compared with ESD7351XV2T1G, ESD7351HT1G offers better thermal handling in SOD-323 but adds 0.45 mm² board area; ESD7351P2T5G saves space in SOD-923 but reduces power survivability - ESD7351XV2T1G balances RF performance, size, and robustness for mainstream high-frequency ESD protection.
Availability
ESD7351XV2T1G is available at Aetrix Electronics and suitable for RF antenna line protection, USB 2.0 high-speed interface safeguarding, and automotive infotainment RF front-end designs requiring stable component supply and AEC-Q101-qualified ESD suppression.
Supply support for ESD7351XV2T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7351 Series was developed specifically for ultra-low-capacitance ESD protection of high-frequency analog and RF signal paths - targeting antenna lines, USB, HDMI, and NFC interfaces where traditional TVS diodes degrade signal fidelity.
FAQ
What is the exact package type and dimensions of ESD7351XV2T1G?
The ESD7351XV2T1G uses the SOD-523 package (Case 502), measuring 1.20 mm × 0.80 mm × 0.60 mm. It features a cathode band marking on pin 1 and anode on pin 2. This compact outline is specified in onsemi's mechanical drawing 98AON11524D and supports fine-pitch automated placement in high-density RF layouts.
Does ESD7351XV2T1G meet automotive qualification standards?
Yes, ESD7351XV2T1G is AEC-Q101 qualified and PPAP capable, as confirmed by the "SZ" prefix in its full ordering part number SZESD7351XV2T1G. It undergoes stress testing for temperature cycling, humidity, mechanical shock, and ESD robustness required for automotive infotainment and telematics systems.
What is the maximum clamping voltage of ESD7351XV2T1G under real ESD stress?
The ESD7351XV2T1G clamps to ≤8.0 V at 1 A peak pulse current (IPP) and ≤10 V at 3 A IPP, per IEC 61000-4-5 waveform testing. These values are measured using Transmission Line Pulse (TLP) methodology and represent worst-case voltage seen by protected circuitry during standardized ESD events.
Can ESD7351XV2T1G be used on 5 V logic lines?
No - ESD7351XV2T1G has a 3.3 V working peak reverse voltage (VRWM) and 5.0 V breakdown voltage (VBR). Using it on 5 V lines risks excessive leakage or premature conduction. For 5 V applications, select devices like ESD7381 or NUP4114 with ≥5.5 V VRWM.
How does the 0.43 pF typical capacitance of ESD7351XV2T1G affect RF performance?
The 0.43 pF typical junction capacitance at 0 V bias introduces negligible reactance on 50 Ω RF traces - resulting in <0.1 dB insertion loss at 2.4 GHz and no measurable VSWR degradation below 3 GHz. This enables transparent integration into antenna matching networks without retuning.
ESD7351XV2T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-79, SOD-523
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.43pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-523
ESD7351XV2T1G FAQ
1.How can I place an order for ESD7351XV2T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7351XV2T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7351XV2T1G reliable?
The price and inventory of ESD7351XV2T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7351XV2T1G is usually 5 days.
3.What payment methods are accepted for ESD7351XV2T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7351XV2T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7351XV2T1G?
ESD7351XV2T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7351XV2T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7351XV2T1G?
For technical support, including ESD7351XV2T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7351XV2T1G requirements.
6.How does Aetrix verify that ESD7351XV2T1G is sourced from the original manufacturer or authorized distributors?
All ESD7351XV2T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7351XV2T1G meets industry standards.
7.What is the process for return or replacement of ESD7351XV2T1G?
All ESD7351XV2T1G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7351XV2T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7351XV2T1G part is unused and in its original packaging.
Return procedure for ESD7351XV2T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7351XV2T1G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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