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onsemi ESD7351XV2T5G
- Part No.:
- ESD7351XV2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
ESD7351XV2T5G.pdf
- Description:
- TVS DIODE 3.3VWM 10VC SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:2,930
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Product details
Overview
ESD7351XV2T5G from onsemi is a unidirectional ESD protection diode in SOD-523 package, featuring 3.3 V stand-off voltage, 0.6 pF max junction capacitance at 1 MHz, 8.0 V clamping voltage at 1 A IPP, <1.0 nA reverse leakage at VRWM, and <1 ns response time - deployed for RF antenna line and USB 2.0 high-speed interface protection.
For engineers reviewing the ESD7351XV2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for signal integrity, IEC61000-4-2 Level 4 (±20 kV contact/air) compliance, and SOD-523 footprint suitability for space-constrained RF front-end layouts.
Technical Context
This device operates as a unidirectional transient voltage suppressor with cathode-anode polarity, designed to clamp ESD-induced overvoltage before it reaches sensitive RF ICs. Its low dynamic resistance (<0.35 Ω) and fast TLP response ensure effective energy diversion during sub-nanosecond transients.
The ESD7351XV2T5G integrates into high-frequency signal paths where parasitic capacitance must remain below 0.6 pF to avoid insertion loss degradation - confirmed by RF characterization up to 10 GHz and CV stability across bias voltage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage | 3.3 V - blocks normal operating voltage while remaining non-conductive during system operation |
| Junction Capacitance | 0.43–0.6 pF @ 0 V, 1 MHz - preserves signal integrity in USB 2.0 and antenna lines without impedance mismatch |
| Clamping Voltage | 8.0 V @ 1 A IPP - limits voltage stress on protected ICs during IEC61000-4-2 ESD events |
| Reverse Leakage | <1.0 nA @ 3.3 V - avoids DC loading of low-power RF bias networks |
| Response Time | <1 ns - activates before ESD pulse peak reaches downstream circuitry |
| ESD Rating | IEC61000-4-2 Level 4: ±20 kV contact, ±20 kV air - meets industrial and automotive immunity requirements |
| Dynamic Resistance | 0.35 Ω - minimizes voltage overshoot under high-current transient conditions |
Pinout & Package
SOD-523 package (1.20 × 0.80 × 0.60 mm), surface-mount, single-diode unidirectional configuration with cathode band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to protected I/O line; conducts during positive ESD transients to ground |
| 2 | Anode | Connected to system ground; completes clamping path for ESD current discharge |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.43 pF typical at 0 V - enables use in >480 Mbps USB 2.0 and multi-GHz antenna paths without signal distortion |
| Low clamping voltage | 8.0 V at 1 A - ensures protected ICs experience voltage stress within safe operating limits during ESD |
| AEC-Q101 qualified | SZ-prefix variant certified - supports automotive infotainment and telematics designs requiring reliability validation |
| Pb-free, RoHS-compliant | Halogen-free/BFR-free construction - satisfies environmental compliance for global electronics manufacturing |
| Fast TLP response | Sub-ns activation verified via Transmission Line Pulse testing - matches real-world ESD event timescales |
Applications
| RF Antenna Protection | USB 2.0 High-Speed Interface |
|---|---|
Use Scenario: Protecting cellular/Wi-Fi/GNSS antenna feedlines from human-body ESD events during handling or operation. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between antenna port and RF transceiver input. Use Value: 0.43 pF capacitance prevents detuning and maintains VSWR <1.5 across 700 MHz–2.7 GHz bands. | Use Scenario: Safeguarding D+ and D− differential pairs in portable USB peripherals against connector-based ESD. IC Role / Device Role / Timing Role: I/O-to-ground ESD suppressor mounted adjacent to USB connector. Use Value: Clamps transients to ≤8.0 V within <1 ns, preserving eye diagram integrity at 480 Mbps data rate. |
| NFC Circuit Protection | RF Switch Control Line Protection |
Use Scenario: Shielding 13.56 MHz NFC reader/writer IC pins from electrostatic discharge during card proximity events. IC Role / Device Role / Timing Role: Low-capacitance shunt protector on bidirectional data/control lines. Use Value: 0.6 pF max capacitance avoids resonance shift in LC matching networks near 13.56 MHz. | Use Scenario: Guarding GPIO-controlled RF switch enable/disable lines in multi-band front-end modules. IC Role / Device Role / Timing Role: Standoff-rated (3.3 V) transient suppressor on low-voltage control inputs. Use Value: Prevents latch-up or gate oxide damage in GaAs pHEMT switches during board-level ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7351XV2T1G | Identical electrical specs; differs only in reel quantity (3,000 vs. 8,000 units) | No functional difference; same SOD-523 package and marking | Select for lower-volume prototyping or when smaller reels align with production planning |
| ESD7351P2T5G | Same electrical performance; uses smaller SOD-923 (0.80 × 0.60 mm) package | Enables tighter layout in ultra-dense RF modules but requires revalidation of thermal dissipation | Choose when board area is constrained beyond SOD-523 limits and 150 mW power rating remains sufficient |
Compared with ESD7351XV2T5G, the ESD7351XV2T1G offers identical protection in a smaller reel format, while ESD7351P2T5G reduces footprint by ~40% using SOD-923 - both retain full IEC61000-4-2 Level 4 compliance and 0.6 pF capacitance ceiling.
Availability
ESD7351XV2T5G is available at Aetrix Electronics and suitable for RF antenna protection, USB 2.0 high-speed interface safeguarding, and NFC circuit hardening requiring stable component supply and consistent AEC-Q101-qualified performance.
Supply support for ESD7351XV2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7351 Series targets ultra-high-frequency signal path protection - engineered specifically for RF front-ends, high-speed serial interfaces, and miniaturized wireless devices where capacitance and footprint are critical constraints.
FAQ
What is the exact package type and dimensions of ESD7351XV2T5G?
ESD7351XV2T5G uses the SOD-523 package (Case 502), measuring 1.20 mm × 0.80 mm × 0.60 mm. It features a two-terminal unidirectional configuration with cathode marked by a polarity band. This compact footprint is optimized for dense RF PCB layouts and validated per JEDEC standards for solder reflow compatibility up to 260°C.
Does ESD7351XV2T5G meet automotive qualification requirements?
Yes, ESD7351XV2T5G is part of the SZESD7351 family and is AEC-Q101 qualified. The "SZ" prefix denotes automotive-grade manufacturing controls, PPAP capability, and extended temperature operation from −55°C to +150°C - making ESD7351XV2T5G suitable for infotainment, telematics, and ADAS subsystems requiring robust ESD immunity.
What is the maximum clamping voltage of ESD7351XV2T5G under real ESD stress?
The ESD7351XV2T5G clamps to 8.0 V at 1 A peak pulse current (IPP) and 10 V at 3 A IPP, per IEC61000-4-2 waveform simulation. These values are measured using TLP testing and reflect actual voltage seen by protected ICs during standardized ESD events - critical for ensuring downstream logic or RF components remain within absolute maximum ratings.
How does the 0.43 pF typical capacitance of ESD7351XV2T5G impact RF performance?
The 0.43 pF typical junction capacitance of ESD7351XV2T5G minimizes insertion loss and phase distortion in RF paths up to 10 GHz, as verified in Figure 4 of the datasheet. This enables direct integration into antenna feedlines and LNA input stages without recalibrating matching networks - preserving gain flatness and noise figure in GNSS, LTE, and Wi-Fi front-ends.
Is ESD7351XV2T5G compatible with lead-free reflow processes?
Yes, ESD7351XV2T5G is Pb-free, RoHS-compliant, and rated for lead-free reflow with a maximum solder temperature of 260°C for 10 seconds. Its SOD-523 package is qualified for standard JEDEC J-STD-020 moisture sensitivity level (MSL) 1, eliminating bake requirements prior to assembly.
ESD7351XV2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-79, SOD-523
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5V
- Voltage - Clamping (Max) @ Ipp:
- 10V
- Current - Peak Pulse (10/1000µs):
- 3A
- Power - Peak Pulse:
- 36W
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.43pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-523
ESD7351XV2T5G FAQ
1.How can I place an order for ESD7351XV2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7351XV2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7351XV2T5G reliable?
The price and inventory of ESD7351XV2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7351XV2T5G is usually 5 days.
3.What payment methods are accepted for ESD7351XV2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7351XV2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7351XV2T5G?
ESD7351XV2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7351XV2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7351XV2T5G?
For technical support, including ESD7351XV2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7351XV2T5G requirements.
6.How does Aetrix verify that ESD7351XV2T5G is sourced from the original manufacturer or authorized distributors?
All ESD7351XV2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7351XV2T5G meets industry standards.
7.What is the process for return or replacement of ESD7351XV2T5G?
All ESD7351XV2T5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7351XV2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7351XV2T5G part is unused and in its original packaging.
Return procedure for ESD7351XV2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7351XV2T5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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