onsemi ESD7361P2T5G

Overview

ESD7361P2T5G from onsemi is a unidirectional ESD protection diode in SOD-923 package, designed for high-speed data lines requiring ultra-low capacitance (0.55 pF max), 16 V working reverse voltage, and ±15 kV IEC 61000-4-2 contact ESD protection-used in NFC antenna interfaces and wireless charging coil signal paths.

For engineers reviewing the ESD7361P2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage at 8 A (31 V), dynamic resistance (0.735 Ω), insertion loss at 5 GHz (2 dB), AEC-Q101 qualification, and SOD-923 footprint compatibility with space-constrained RF front-end layouts.

Technical Context

This device implements a single-channel unidirectional TVS structure optimized for RF-sensitive signal lines. Its low-junction-capacitance design minimizes signal distortion while maintaining robust transient suppression across IEC 61000-4-2, -4-4, and -4-5 standards.

The ESD7361P2T5G features a defined cathode-anode polarity with 16.5 V breakdown voltage at 1 mA and clamps to 31 V under 8 A TLP pulse-enabling protection of 3.3 V/5 V logic interfaces without forward conduction during normal operation.

Key Specifications

Pinout & Package

SOD-923 surface-mount package with 2-terminal configuration: compact 0.80 mm × 0.60 mm footprint, 0.37 mm profile, and gull-wing leads compatible with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD7361XV2T5G and TPD2E001DRYR, the ESD7361P2T5G uniquely combines SOD-923 miniaturization, 16 V working voltage, AEC-Q101 qualification, and 0.55 pF capacitance-making it the sole option for space-constrained automotive NFC modules requiring full IEC/ISO compliance.

Availability

ESD7361P2T5G is available at Aetrix Electronics and suitable for NFC antenna protection, wireless charging coil interfaces, and automotive infotainment display links requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for ESD7361P2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient silicon solutions for automotive, industrial, cloud, medical, and IoT applications.

The ESD7361 Series is part of onsemi's precision ESD protection portfolio, engineered specifically for high-frequency analog and RF signal lines where capacitance, clamping speed, and package size directly impact system-level EMC performance.

FAQ

What is the maximum clamping voltage of ESD7361P2T5G under an 8 A TLP pulse?

The ESD7361P2T5G clamps to 31 V when subjected to an 8 A Transmission Line Pulse (TLP) per ANSI/ESD STM5.5.1. This value is measured across the device terminals with Z₀ = 50 Ω, tₚ = 100 ns, and averaging window from 30 ns to 60 ns. The 31 V clamping voltage ensures downstream 3.3 V or 5 V ICs remain within absolute maximum ratings during ESD events. This specification is confirmed in the Electrical Characteristics table on page 2 of the official ESD7361/D datasheet.

Is ESD7361P2T5G qualified for automotive applications?

Yes, ESD7361P2T5G is AEC-Q101 qualified and PPAP capable, as indicated by the "SZ" prefix in its full ordering code SZESD7361P2T5G*. It meets the stress test requirements for temperature cycling, humidity bias, and mechanical shock defined in AEC-Q101 Rev H. This qualification makes ESD7361P2T5G suitable for use in automotive infotainment, telematics, and ADAS subsystems where ESD immunity must be guaranteed across −40 °C to +125 °C operating junction temperatures.

What is the junction capacitance of ESD7361P2T5G at 1 MHz and 0 V bias?

The junction capacitance of ESD7361P2T5G is specified as 0.55 pF maximum at 0 V DC bias and 1 MHz test frequency. This value is measured using standard impedance analyzers per JEDEC JESD22-A122. The ultra-low capacitance enables minimal loading on high-speed signal paths such as NFC antennas and USB 2.0 differential pairs. Figure 8 in the datasheet confirms this value remains stable up to 4 GHz, supporting RF applications beyond baseband frequencies.

Does ESD7361P2T5G support bidirectional ESD protection?

No, ESD7361P2T5G is a unidirectional ESD protection diode. Its schematic symbol and pin configuration (cathode on pin 1, anode on pin 2) define conduction only during positive transients on the cathode relative to anode. For bidirectional protection, two ESD7361P2T5G devices would need back-to-back placement-or a dedicated bidirectional part like ESD7380 series must be selected. This unidirectional behavior is explicitly stated in the Electrical Characteristics table and Figure 1 IV curve of the ESD7361/D datasheet.

What is the operating junction temperature range for ESD7361P2T5G?

The ESD7361P2T5G operates across a junction temperature range of −55 °C to +125 °C, as specified in the Maximum Ratings table on page 1 of the ESD7361/D datasheet. This range supports deployment in extended-temperature environments including under-hood automotive modules and outdoor industrial gateways. The device maintains full electrical performance-including 0.55 pF capacitance and 31 V clamping-throughout this range, validated via temperature-swept TLP testing per AEC-Q101 requirements.