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onsemi ESD7371XV2T1G
- Part No.:
- ESD7371XV2T1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
ESD7371XV2T1G.pdf
- Description:
- TVS DIODE 5.3VWM SOD523
- Quantity:
- Payment:
- Shipping:
Inventory:3,563
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Product details
Overview
ESD7371XV2T1G from onsemi is a unidirectional ESD protection diode in SOD-523 package, designed for ultra-low-capacitance RF signal line protection. It delivers 0.7 pF max junction capacitance at 0 V, 5.3 V stand-off voltage, <1 nA reverse leakage at VRWM, and clamps to ≤15 V at 1 A IPP - enabling robust ESD immunity in antenna, PA, and NFC signal paths of space-constrained wireless handsets.
For engineers reviewing the ESD7371XV2T1G datasheet, pinout, applications, or equivalent options, key selection criteria include RF insertion loss performance, capacitance linearity over bias voltage, IEC 61000-4-2 Level 4 compliance (±8 kV contact), and SOD-523 footprint compatibility with high-density RF front-end layouts.
Technical Context
This device operates as a single-channel, unidirectional TVS diode with cathode-anode polarity. Its clamping behavior is characterized by dynamic resistance <0.45 Ω and fast response to IEC 61000-4-2 transients, verified via TLP testing at 100 ns pulse width.
The ESD7371XV2T1G exhibits industry-leading capacitance linearity from 0 V to 5.3 V bias, maintaining ≤0.7 pF across the RF band (<1 GHz), which minimizes signal distortion in antenna feedlines and high-speed data lines such as USB 2.0.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (CJ) | 0.7 pF max at 0 V, 1 MHz - ensures minimal RF signal attenuation and phase shift in 50 Ω antenna paths |
| Stand-off Voltage (VRWM) | 5.3 V - supports operation on 5 V logic and RF bias rails without leakage-induced power loss |
| Clamping Voltage (VC) | ≤15 V at 1 A IPP - limits transient overvoltage to safe levels for downstream GaAs/GaN RF switches and LNAs |
| Leakage Current (IR) | <1 nA at 5.3 V - prevents DC loading and battery drain in always-on RF receive chains |
| ESD Rating | IEC 61000-4-2 Level 4: ±8 kV contact / ±15 kV air - meets smartphone and tablet ESD certification requirements |
| Breakdown Voltage (VBR) | 7.0 V min at 1 mA - provides margin above VRWM to avoid premature conduction during normal operation |
| Dynamic Resistance (RDYN) | 0.45 Ω - enables rapid energy shunting with low voltage overshoot during sub-nanosecond ESD events |
Pinout & Package
SOD-523 package (1.20 mm × 0.80 mm × 0.60 mm), surface-mount, lead-free, RoHS-compliant. Two-terminal unidirectional configuration with marked cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to system ground or low-impedance return path; defines polarity for unidirectional clamping from I/O to GND |
| 2 | Anode | Connected to protected signal line (e.g., antenna feed, USB D+, NFC coil); conducts during positive ESD transients |
Key Features
| Feature | Design Value |
|---|---|
| Capacitance linearity over voltage | Maintains ≤0.7 pF from 0–5.3 V bias - preserves impedance matching and S21 performance in RF front-ends |
| Ultra-low dynamic resistance | 0.45 Ω - reduces clamping voltage overshoot and improves survivability under multi-strike ESD stress |
| AEC-Q101 qualification | Validated for automotive infotainment and telematics modules requiring extended temperature and reliability assurance |
| Pb-free, halogen-free, RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) and reflow profile compatibility up to 260°C peak |
Applications
| Antenna Line Protection | RF Power Amplifier (PA) Output Protection |
|---|---|
|
Use Scenario: Protecting cellular/Wi-Fi/GNSS antenna feedlines from ESD damage during handling and field operation. IC Role / Device Role / Timing Role: Unidirectional shunt ESD clamp placed between antenna port and RF switch/LNA input. Use Value: 0.7 pF capacitance and linear CV behavior prevent detuning and insertion loss degradation across 700 MHz–6 GHz bands. |
Use Scenario: Safeguarding PA output stage against ESD-induced gate oxide rupture during board assembly and end-user interaction. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor mounted directly at PA output pad before matching network. Use Value: Clamps to ≤15 V at 1 A while adding <0.05 dB insertion loss at 2.4 GHz - preserving PA efficiency and linearity. |
| NFC Loop Antenna Interface | USB 2.0 High-Speed Data Lines |
|
Use Scenario: ESD protection for bidirectional 13.56 MHz NFC loop antennas in payment terminals and wearables. IC Role / Device Role / Timing Role: Single-diode shunt protector on each antenna terminal, referenced to ground plane. Use Value: Sub-1 pF capacitance avoids resonance shift and maintains Q-factor >15 required for ISO/IEC 14443 coupling efficiency. |
Use Scenario: Protecting D+ and D− lines in portable USB 2.0 peripherals against human-body-model ESD events. IC Role / Device Role / Timing Role: Dual-channel layout (two ESD7371XV2T1G devices) per differential pair, grounded cathode configuration. Use Value: Enables full-speed (480 Mbps) signaling integrity with <0.1 UI jitter increase and no eye diagram closure beyond USB-IF compliance limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7381XV2T1G | 0.35 pF typ capacitance at 0 V; 6.0 V VRWM; higher cost; same SOD-523 package | Better suited for mmWave (24–40 GHz) antenna tuning where sub-0.4 pF is mandatory | Select when RF bandwidth exceeds 6 GHz and CV linearity below 0.4 pF is required; otherwise ESD7371XV2T1G offers optimal cost-performance balance |
| TPD2E001DRYR | 0.8 pF max; dual-channel; 5.5 V VRWM; 12 V VC @ 1 A; SON-6 package (1.45 × 1.0 mm) | Supports differential protection in compact layouts but adds 0.1 pF excess capacitance vs. ESD7371XV2T1G | Choose for space-constrained USB 2.0 or HDMI designs needing dual-line integration; not recommended for single-line RF antenna use due to higher capacitance |
Compared with ESD7371XV2T1G, ESD7381XV2T1G provides lower capacitance for advanced RF bands but at premium cost, while TPD2E001DRYR offers integrated dual-channel protection in slightly larger footprint - making ESD7371XV2T1G the preferred choice for cost-sensitive, single-line 5G/Wi-Fi 6 antenna protection.
Availability
ESD7371XV2T1G is available at Aetrix Electronics and suitable for RF antenna protection, USB 2.0 interface hardening, and NFC loop shielding requiring stable component supply across consumer electronics, automotive infotainment, and industrial wireless sensor designs.
Supply support for ESD7371XV2T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7371 Series was developed specifically for ultra-low-capacitance ESD protection in RF front-end modules, addressing the need for sub-1 pF, high-linearity transient suppression in 5G smartphones and Wi-Fi 6E access points.
FAQ
What is the maximum operating temperature range for ESD7371XV2T1G?
The ESD7371XV2T1G is rated for junction and storage temperatures from −55 °C to +150 °C. This wide range supports deployment in automotive cabin modules, outdoor wireless infrastructure, and industrial handhelds where ambient conditions exceed standard commercial limits. The device maintains specified clamping and leakage performance across this full range when mounted per onsemi's recommended PCB pad layout.
Is ESD7371XV2T1G suitable for protecting 5G NR sub-6 GHz antenna ports?
Yes, ESD7371XV2T1G is explicitly validated for sub-6 GHz antenna line protection. Its 0.7 pF max capacitance, linear CV behavior up to 5.3 V, and <0.05 dB insertion loss at 3.5 GHz ensure minimal impact on VSWR and radiation efficiency. onsemi's Application Note AND8308/D confirms its suitability for LTE/5G FR1 bands when placed within 3 mm of the antenna connector.
Does ESD7371XV2T1G meet AEC-Q101 requirements?
Yes, ESD7371XV2T1G - identified by the SZ prefix in its full ordering code SZESD7371XV2T1G - is AEC-Q101 qualified and PPAP capable. It has passed stress tests including HTGB, AC-H3TRB, and ESD HBM/MM per AEC-Q101 Rev D, making it approved for automotive infotainment, telematics, and ADAS camera module interfaces.
How many ESD strikes can ESD7371XV2T1G withstand at ±8 kV contact discharge?
The ESD7371XV2T1G is rated for 1000 IEC 61000-4-2 ±8 kV contact discharge strikes without parameter degradation. This endurance is verified per onsemi's internal qualification test plan aligned with JEDEC JESD22-A114 and confirmed in the device's datasheet revision 5 (October 2024). Performance retention is guaranteed only when mounted on FR-4 PCB with minimum recommended pad size and thermal relief.
What is the thermal resistance (RJA) of ESD7371XV2T1G in SOD-523 package?
The thermal resistance junction-to-ambient (RJA) for ESD7371XV2T1G in SOD-523 package is 400 °C/W, measured on FR-4 board with recommended minimum pad size per onsemi's layout guidelines. This value assumes natural convection cooling and defines the maximum power dissipation (300 mW at 25 °C ambient) before junction temperature exceeds 150 °C under sustained transient conditions.
ESD7371XV2T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-79, SOD-523
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.3V (Max)
- Voltage - Breakdown (Min):
- 7V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.43pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-523
ESD7371XV2T1G FAQ
1.How can I place an order for ESD7371XV2T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7371XV2T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7371XV2T1G reliable?
The price and inventory of ESD7371XV2T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7371XV2T1G is usually 5 days.
3.What payment methods are accepted for ESD7371XV2T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7371XV2T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7371XV2T1G?
ESD7371XV2T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7371XV2T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7371XV2T1G?
For technical support, including ESD7371XV2T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7371XV2T1G requirements.
6.How does Aetrix verify that ESD7371XV2T1G is sourced from the original manufacturer or authorized distributors?
All ESD7371XV2T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7371XV2T1G meets industry standards.
7.What is the process for return or replacement of ESD7371XV2T1G?
All ESD7371XV2T1G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7371XV2T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7371XV2T1G part is unused and in its original packaging.
Return procedure for ESD7371XV2T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7371XV2T1G Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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