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onsemi ESD7381MUT5G
- Part No.:
- ESD7381MUT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
ESD7381MUT5G.pdf
- Description:
- TVS DIODE 3.3VWM 10VC 2X3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:77,010
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Product details
Overview
ESD7381MUT5G from onsemi is a unidirectional ESD protection diode in X3DFN2 package (0.60 mm × 0.30 mm, 0.3 mm height), designed for ultra-low-capacitance transient suppression on high-speed signal lines. It delivers 0.37 pF junction capacitance at 0 V, 3.3 V stand-off voltage, <1 ns response time, and IEC 61000-4-2 Level 4 (±20 kV contact) compliance - ideal for USB 2.0 high-speed and antenna line protection.
For engineers reviewing the ESD7381MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 1 A (8.0 V), dynamic resistance of 0.32 Ω, sub-50 nA leakage at 3.3 V, insertion loss of 0.030 dB at 1 MHz, and compatibility with space-constrained RF-sensitive layouts.
Technical Context
The ESD7381MUT5G is a single-channel, unidirectional TVS diode configured as a cathode-anode pair (Pin 1 = cathode, Pin 2 = anode), optimized for low-capacitance signal-line protection. Its silicon structure enables fast TLP response (<1 ns) and low dynamic resistance (0.32 Ω), ensuring minimal voltage overshoot during ESD transients per IEC 61000-4-2.
It operates with a 3.3 V working peak reverse voltage and 5.0 V breakdown voltage (at 1 mA), maintaining <1.0 nA typical reverse leakage. The device sustains ±20 kV ESD immunity while adding negligible RF insertion loss (0.573 dB at 8.5 GHz), making it suitable for GHz-range antenna front-end and high-speed digital interface protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance | 0.37 pF at 0 V, 1 MHz - preserves signal integrity on USB 2.0 and RF paths |
| Clamping Voltage | 8.0 V at 1 A IPP - limits transient overvoltage to safe levels for downstream ICs |
| Stand-off Voltage | 3.3 V - matches common I/O rail voltages without leakage or false triggering |
| ESD Rating | ±20 kV contact per IEC 61000-4-2 Level 4 - exceeds industrial immunity requirements |
| Dynamic Resistance | 0.32 Ω - minimizes voltage rise during fast ESD pulses (TLP) |
| Leakage Current | <1.0 nA at 3.3 V - avoids power drain in battery-powered sensor nodes |
| Response Time | <1 ns - engages before sensitive circuitry sustains damage |
Pinout & Package
X3DFN2 package: 0.60 mm × 0.30 mm body, 0.3 mm height, 0.35 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Connected to protected line; conducts during positive transients to ground |
| Pin 2 | Anode | Connected to system ground; completes current path during ESD events |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.37 pF enables use on 480 Mbps USB 2.0 differential pairs without signal degradation |
| Low clamping voltage | 8.0 V @ 1 A ensures protected ICs remain below absolute maximum ratings during ESD |
| Miniature footprint | 0.60 mm × 0.30 mm saves board area in compact IoT and mobile antenna modules |
| High-frequency performance | 0.573 dB insertion loss at 8.5 GHz supports LTE/5G antenna line protection |
Applications
| USB 2.0 High-Speed Interface | Cellular Antenna Line Protection |
|---|---|
Use Scenario: Protecting D+ and D− lines of USB 2.0 ports against ESD in portable devices. IC Role / Device Role / Timing Role: Unidirectional shunt diode placed between data line and ground to clamp transients. Use Value: 0.37 pF capacitance prevents eye diagram distortion; 8.0 V clamping avoids PHY damage. | Use Scenario: Safeguarding main antenna feed lines in smartphones and LTE modules from user-hand ESD. IC Role / Device Role / Timing Role: Series-connected ESD suppressor on RF path, grounded via shortest possible trace. Use Value: 0.573 dB loss at 8.5 GHz maintains antenna efficiency; ±20 kV rating covers real-world handling events. |
| GPIO Protection in Wearables | RF Front-End Module Input Protection |
Use Scenario: Shielding low-voltage GPIOs (e.g., touch sensors, buttons) in compact wearables. IC Role / Device Role / Timing Role: Standoff-rated (3.3 V) shunt protector on each I/O pin to ground. Use Value: Sub-1 nA leakage preserves battery life; 0.60 mm × 0.30 mm footprint fits tight layout constraints. | Use Scenario: Protecting LNA inputs in Wi-Fi 6/6E and Bluetooth 5.0 RF front-end modules. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp between RF input and ground plane. Use Value: 0.25–0.55 pF capacitance range across bias ensures minimal impedance mismatch at 2.4/5/6 GHz bands. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF capacitance, bidirectional, 5.5 V stand-off | Better suited for dual-directional protection on symmetric buses like HDMI | Select when bidirectional clamping and higher VRWM are required |
| ESD9X3.3SCT5G | 0.5 pF capacitance, same unidirectional topology, 3.3 V VRWM | Slightly higher capacitance but identical package and pinout | Acceptable drop-in alternative where 0.13 pF extra capacitance is tolerable |
Compared with TPD2E001DRYR and ESD9X3.3SCT5G, the ESD7381MUT5G offers the lowest capacitance (0.37 pF) and best RF performance for high-frequency antenna and USB 2.0 lines, though it is unidirectional only and requires correct polarity placement.
Availability
ESD7381MUT5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, cellular antenna line safeguarding, and wearable GPIO hardening requiring stable component supply and consistent parametric performance across production lots.
Supply support for ESD7381MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7381MUT5G belongs to onsemi's Micro-Packaged ESD Protection Diode product line, engineered specifically for ultra-low-capacitance, high-frequency signal-line protection in space-constrained portable and wireless systems.
FAQ
What is the polarity configuration of the ESD7381MUT5G?
The ESD7381MUT5G is a unidirectional ESD protection diode with Pin 1 as cathode and Pin 2 as anode. It conducts during positive transients on the protected line (cathode side) to ground (anode side), and blocks reverse current up to its 3.3 V stand-off rating. This polarity must be observed in PCB layout to ensure proper clamping behavior - incorrect orientation renders ESD7381MUT5G ineffective.
Does the ESD7381MUT5G meet IEC 61000-4-2 Level 4?
Yes, the ESD7381MUT5G is rated for ±20 kV contact discharge and ±20 kV air discharge per IEC 61000-4-2 Level 4. Test data confirms clamping waveforms under both polarities at 8 kV contact, with voltage suppressed below 12 V during full pulse duration. This certification is validated in the official onsemi datasheet (Rev. 9, April 2024) and applies directly to the ESD7381MUT5G in X3DFN2 packaging.
What is the maximum clamping voltage of the ESD7381MUT5G at 3 A peak current?
The ESD7381MUT5G exhibits a maximum clamping voltage of 10 V at 3 A peak pulse current (IPP), as specified in the Electrical Characteristics table. This value reflects worst-case transient suppression under high-energy ESD events and ensures downstream ICs with 12 V absolute maximum ratings remain within safe operating limits. The clamping voltage is measured per IEC 61000-4-5 waveform conditions at TA = 25°C.
Can the ESD7381MUT5G be used on 5 GHz Wi-Fi antenna lines?
Yes, the ESD7381MUT5G is qualified for 5 GHz Wi-Fi antenna line protection due to its 0.37 pF capacitance at DC/1 MHz and verified 0.573 dB insertion loss at 8.5 GHz. Measured CV characteristics show stable sub-0.55 pF performance up to 3 GHz, and RF insertion loss remains below 0.6 dB across the 2.4–5.8 GHz band. These parameters are confirmed in Figures 4, 5, and 6 of the ESD7381MUT5G datasheet.
What is the thermal resistance and power dissipation capability of the ESD7381MUT5G?
The ESD7381MUT5G has a junction-to-ambient thermal resistance (RJA) of 400 °C/W on FR-5 board and a total power dissipation rating of 250 mW at TA = 25°C. These values reflect its micro-packaged X3DFN2 construction and are sufficient for transient ESD energy absorption (per IEC 61000-4-2), not continuous power handling. The device is not intended for sustained overvoltage or surge conditions beyond standardized ESD test profiles.
ESD7381MUT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5V
- Voltage - Clamping (Max) @ Ipp:
- 10V
- Current - Peak Pulse (10/1000µs):
- 3A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.37pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X3DFN (0.6x0.3) (0201)
ESD7381MUT5G FAQ
1.How can I place an order for ESD7381MUT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7381MUT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7381MUT5G reliable?
The price and inventory of ESD7381MUT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7381MUT5G is usually 5 days.
3.What payment methods are accepted for ESD7381MUT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7381MUT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7381MUT5G?
ESD7381MUT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7381MUT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7381MUT5G?
For technical support, including ESD7381MUT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7381MUT5G requirements.
6.How does Aetrix verify that ESD7381MUT5G is sourced from the original manufacturer or authorized distributors?
All ESD7381MUT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7381MUT5G meets industry standards.
7.What is the process for return or replacement of ESD7381MUT5G?
All ESD7381MUT5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7381MUT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7381MUT5G part is unused and in its original packaging.
Return procedure for ESD7381MUT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7381MUT5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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